Publications – 2012


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2012

  • 157. C.-H. Lin, T.A. Merz, D.R. Doutt, J. Joh, J.A. Del Alamo, U.K. Mishra, and L.J. Brillson, “Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale,” IEEE Trans. Electron. Dev. 59, 2667 (2012). doi: 10.1109/TED.2012.2206595
  • 156. Z. Zhang, K.E. Knutsen, T. Merz, A. Yu. Kuznetsov, B.G. Svensson, L.J. Brillson, “Control of Configuration and Electrical Properties of Li – Doped ZnO,” J. Phys. D: Appl. Phys. 45, 375301 (2012). doi:10.1088/0022-3727/45/37/375301
  • 155. P. Casal, X. Wen, S. Gupta, T. Nicholson, A. Theiss, Y. Wang, L. Brillson, W. Lu, and S.C. Lee, “ImmunoHFET operation in physiological salt environments,” Phil. Trans. R. Soc. A 370, 2474-2488 (2012). doi:10.1098/rsta.2011.0503
  • 154. Z. Zhang, T.A. Merz, K-E. Knutsen, A. Yu. Kuznetsov, B.G. Svensson and L.J. Brillson “Thermal process dependence of Li configuration and electrical properties in Li-doped ZnO,” Appl. Phys. Lett. 100, 042107 (2012). doi:10.1063/1.3679708
  • 153. E.J. Katz, H.L. Hughes, M.E. Twigg, B.J. Mrstik, G. Lucovsky, and L.J. Brillson, “Electrical and Nanoscale Depth Resolved Properties of Plasma Deposited Silicon- Rich SiOx Oxides for Radiation Tolerant Electronics,” J. Radiation Effects, Research and Engineering, 30 (1), 133 (2012).