Publications – 2008


2022 2021 2020 2019 2018 2017 2016 2015 2014 2013
2012 2011 2010 2009 2008 2007 2006 2005 2004 2003
2002 2001 2000 1999 1998 1997 1996 1995 1994 1993
1992 1991 1990 1989 1988 1987 1986 1985 1984 1983
1982 1981 1980 1979 1978 1977 1976 1975 1974 1973
1972 1971                
View All View None

2008

  • 131. S. Gupta, M. Elias, X. Wen, J. Shapiro, L. Brillson, W. Lu, and S. Lee, “Detection of clinically relevant levels of biological analyte under physiologic buffer using planar field effect transistors,” Biosensors and Bioelectronics,” 24 (4), 505-511(2008).
  • 130. Y. Dong, Z-Q. Fang, D.C. Look, G. Cantwell, J. Zhang, J.J. Song, and L.J. Brillson, “Zn- and O-face effects at ZnO surfaces and metal interfaces,” Appl. Phys. Lett. 93, 172111 (2008). doi: 10.1063/1.2974983
  • 129. Z.-Q. Fang, B. Claflin, D.C. Look, Y.F. Dong, H.L. Mosbacker, and L.J. Brillson, “Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy,” J. Appl. Phys. 104, 063707 (2008).
  • 128. D.R. Doutt, C. Zgrabik, H.L. Mosbacker, and L.J. Brillson, “Impact of near-surface native point defects, chemical reactions and surface morphology on ZnO interfaces,” J. Vac. Sci. Technol. B 26, 1477 (2008).
  • 127. J. Zhang, S. Walsh, C. Brooks, D.G. Schlom, and L.J. Brillson, “Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3,” J. Vac. Sci. Technol. B 26, 1466 (2008).
  • 126. P.E. Smith, M. Lueck, S.A. Ringel, and L.J. Brillson, “Atomic Diffusion and Interface Electronic Structure at In0.49Ga0.51P/GaAs Heterojunctions,” J. Vac. Sci. Technol. B 26, 89-95 (2008).
  • 125. A.J. Hauser, J. Zhang, L. Mier, R.A. Ricciardo, P.M. Woodward, T.L. Gustafson, L.J. Brillson, and F.Y. Yang, “Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-Vis absorption and cathodoluminescence spectroscopies,” Appl. Phys. Lett. 92, 222901(2008).
  • 124. Y.M. Strzhemechny, M. Bataiev, S.P. Tumakha, S.H. Goss, C.L. Hinkle, C.C. Fulton, G. Lucovsky and L.J. Brillson “Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si Stacks,” J. Vac. Sci. Technol. B 26, 232-243 (2008).
  • 123. E. Eteshola, M.T. Keener, M. Elias, J. Shapiro, L.J. Brillson, B. Bhushan and S.C. Lee, “Engineering Functional Protein Interfaces for Immunologically Modified Field Effect Transistor (ImmunoFET) by Molecular Genietic Means,” J. Royal Soc. Interface 5, 123-127 (2008).