Books and Book Chapters

Books and Monograph of Leonard J. Brillson

  • L. J. Brillson, The Structure and Properties of Metal-Semiconductor Interfaces (North-Holland, Amsterdam) Surface Science Reports 2, 123-326 (1982). (1993 Citation Classic, Monograph) DOI:10.1016/0167-5729(82)90001-2
  • L.J. Brillson, Surfaces and Interfaces of Electronic Materials (Wiley-VCH,Weinheim, 2010) 570 pages. ISBN 978-3-527-40915-0. (Textbook)
  • L. J. Brillson, An Essential Guide to Electronic Material Surfaces and Interfaces (John Wiley & Sons, New York, 2016) 298 pages. ISBN: 9781119027119. (Textbook)
  • Proceedings of the Topical Conference on Frontiers in Electronic Materials, edited by L.J. Brillson (American Institute of Physics, 1986). 338 pages. ISBN-13: 9780883183373
  • Contacts to Semiconductors: Fundamentals and Technology, edited by L.J. Brillson (Noyes Press,Park Ridge, NJ, 1993). 680 pages. ISBN 0-8155-1336-4.

Book Chapters of Leonard J. Brillson

  • L.J. Brillson, “Soft X-Ray Photoemission Techniques for Characterizing Metal-Semiconductor Interfaces,” Proceedings of the Brookhaven Conference on Advances in Soft X-Ray Science and Technology, Eds. F.J. Himpsel and R.W. Klaffky (SPIE, Bellingham, WA, 1984) p. 89.
  • L.J. Brillson, “Metal-Semiconductor Interface Studies by Synchrotron Radiation Techniques,” in Handbook of Synchrotron Radiation, Volume II, edited by G.V. Marr (North-Holland, Amsterdam, 1985), pp.541-609.
  • L.J. Brillson, “Metallization of III-V Compounds”, in “Semiconductor- Based Heterostructures: Interfacial Structure and Stability,” edited by J.E.E.Baglin, G.Y.Chin, H. W. Deckman, W. Mayo, and D. Narasinham (The Metallurgical Society, Inc.Warrendale, PA, 1986) pp.387-395.
  • L.J. Brillson, “Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces,” in The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Eds. D. A. King and D. P. Woodruff (Elsevier, Amsterdam, 1988), Vol. 5, Chap. 4, pp. 119-181.
  • L.J. Brillson, “Deep Levels and Band Bending at Metal-Semiconductor Interfaces,” in Metallization and Metal-Semiconductor Interfaces, NATO ASI Conference Series, edited by I. Batra (Plenum, New York, 1989) pp. 91-110.
  • L.J. Brillson, “Characterization of Schottky Barriers Applied to III-V Compounds,” in Materials and Process Characterization for VLSI, 1988, edited by X.-F. Zong, Y.-Y. Wang, and J. Chen (World Scientific, Singapore, 1988), pp. 239-241.
  • L.J. Brillson, “Progress in Understanding and Controlling Metal-Semiconductor Interfaces,” Industry-University Advanced Materials Conference II, edited by F.W.Smith (Advanced Materials Institute, Golden, CO, 1989), pp.1 – 10.
  • L.J. Brillson, “Advances in Controlling Electrical Contacts for Optoelectronics,” in American Vacuum Society Series 10, Conference Proceedings 227, edited by P. Holloway (American Institute of Physics, New York, 1991) p.130.
  • L.J. Brillson, “Schottky Barrier Contacts for Compound Semiconductors,” in Encyclopedia of Advanced Materials, S. Mahajan and L.C. Kimerling, eds. (Pergamon, Oxford, 1992) pp.409-412.
  • L.J. Brillson, “Surfaces and Interfaces: Atomic-Scale Structure, Band Bending and Band Offsets,” in Handbook on Semiconductors, Volume 1, edited by P. T. Landsberg (North-Holland, Amsterdam, 1992), ch.7, pp.281-417.
  • L.J. Brillson, “Interface States,” in Contacts to Semiconductors, Fundamentals and Technology, L. J. Brillson ed. (Noyes, Park Ridge, NJ, 1993), pp. 333-413.
  • L.J. Brillson, A.P.Young, J. Schafer, H. Niimi, and G. Lucovsky, “Ultrathin Silicon Oxide and Nitride – Silicon Interface States,” in Ultrathin SiO2 and High – K Materials for ULSI Gate Dielectrics, ed. H.R.Huff, M.L.Green, T.Hattori, G. Lucovsky, and C.A.Richter, Proc. Materials Research Society (MRS PressWarrendale, PA, 1999) 567, pp.549-558.
  • L.J. Brillson, “Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices,” Proc. Wide Band Gap Semiconductors for Photonic and Electronic Devices and Sensors III, eds. E.B. Stokes, R.C. Fitch, Jr., D.N. Buckley, P.C. Chang, D.W. Merfeld, and F. Ren (The Electrochemical Society, Pennington, NY, 2003) pp. 229-235.
  • L.J. Brillson, “Surface Properties and Electrical Contacts on ZnO,” in ZnO Materials for Electronic and Optoelectronic Device Applications, eds. C.W. Litton, D.C.Litton, and T.C. Collins (John Wiley & Sons, Ltd, London, UK, 2011), Ch. IV, pp. 87-112.
  • L.J. Brillson, “Surfaces and Interfaces of Zinc Oxide,” in Semiconductors and Semimetals: Oxide Semiconductors, Vol. 88, ed. B.G. Svensson, S.J. Pearton, and C. Jagadish (SEMSEM, Academic Press, Burlington, 2013) Ch. 4. ISBN: 978-0-470-51971-4 http://dx.doi.org/10.1016/B978-0-12-396489-2.00004-7
  • L.J. Brillson, “Contacts for Compound Semiconductors: Schottky Barrier Type,” Reference Module in Materials Science and Materials Engineering, ed. M.S.J. Hasmi (Oxford, Elsevier, 2016) pp.1-9. ISBN: 978-0-12-803581-8