1. L.J. Brillson, “Interaction of Metals with Semiconductor Surfaces,” Applications of Surface Science, 11/12, 249 (1982).
  2. L.J. Brillson, “Chemical and Electronic Structure of Compound Semiconductor-Metal Interfaces,” Journal of Vacuum Science and Technology 20, 652 (1982).
  3. L.J. Brillson, “Interface Chemical Reaction and Interdiffusion of Thin Metal Films on Semiconductors,” Thin Solid Films 89, 461 (1982).
  4. L.J. Brillson, “Advances in Understanding Metal – Semiconductor Interfaces by Ultrahigh Vacuum Techniques,” International Journal of the Physics and Chemistry of Solids 44, 703 (1983).
  5. L.J. Brillson, “Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces,” Proceedings of the Second IUPAP Semiconductor Symposium on Surfaces and Interfaces, Surface Science 132, 212 (1983).
  6. L.J. Brillson, “Contact Technology in 3-5 Device Analysis and Modification of Metal-Semiconductor Contact Interface in 3-5 Devices,” IEEE Technical Digest of the International Electron Devices Meeting (1983), p.
  7. L.J. Brillson, “Soft X-Ray Photoemission Techniques for Characterizing Metal-Semiconductor Interfaces,” Proceedings of the Brookhaven Conference on Advances in Soft X-Ray Science and Technology, Eds. F.J. Himpsel and R.W. Klaffky (SPIE, Bellingham, WA, 1984) p.
  8. L.J. Brillson, “Advances in Characterizing and Controlling Metal-Semiconductor Interfaces,” Applications of Surface Science 22/23, 948 (1985).
  9. L.J. Brillson, “Metal-Semiconductor Interface Studies by Synchrotron Radiation Techniques,” in Handbook of Synchrotron Radiation, Volume II, edited by G.V. Marr (North-Holland, Amsterdam, 1985), pp.541-
  10. L.J. Brillson, “Promoting and Characterizing New Chemical and Electronic Structure at Metal-Semiconductor Interfaces,” Surface Science 168, 260 (1986).
  11. L.J. Brillson, “Chemical Reaction and Interdiffusion at III-V Compound Semiconductor-Metal Interfaces,” Materials Research Society Symposium Proceedings 54, 327 (1986).
  12. L.J. Brillson, Proceedings of the Topical Conference on Frontiers in Electronic Materials and Processing, edited by (American Institute of Physics, New York, 1986) 338 pages.
  13. L.J. Brillson, Proceedings of the Topical Conference on Frontiers in Electronic Materials and Processing, edited by (American Institute of Physics, New York, 1986) 338 pages.
  14. L.J. Brillson, “Metallization of III-V Compounds, in Semiconductor- Based Heterostructures: Interfacial Structure and Stability,” edited by J.E.E.Baglin, G.Y.Chin, H. W. Deckman, W. Mayo, and D. Narasinham (The Metallurgical Society, Inc.Warrendale, PA, 1986) pp.387-
  15. L.J. Brillson, “Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces,” in The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Eds. D. A. King and D. P. Woodruff (Elsevier, Amsterdam, 1988), Vol. 5, Chap. 4, pp. 119-
  16. L.J. Brillson, “Low Energy Cathodoluminescence Spectroscopy of Semiconductor Interfaces,” Scanning Electron Microscopy 2, 789 (1988).
  17. L.J. Brillson, “Cathodoluminescence Spectroscopy of Metal-Semiconductor Interface Structures,” Journal of Vacuum Science and Technology A6, 1437 (1988).
  18. L.J. Brillson, “Deep Levels and Band Bending at Metal-Semiconductor Interfaces,” in Metallization and Metal-Semiconductor Interfaces, NATO ASI Conference Series, edited by I. Batra (Plenum, New York, 1989) pp. 91-
  19. L.J. Brillson, “Metal Semiconductor Contacts: Electronic Structure of the Interface,” Comments on Condensed Matter Physics 14, pp. 311-342 (1989).
  20. L.J. Brillson, “Characterization of Schottky Barriers Applied to III-V Compounds,” in Materials and Process Characterization for VLSI, 1988, edited by X.-F. Zong, Y.-Y. Wang, and J. Chen (World Scientific, Singapore, 1988), pp. 239-
  21. L.J. Brillson, “Progress in Understanding and Controlling Metal-Semiconductor Interfaces,” Industry-University Advanced Materials Conference II, edited by F.W.Smith (Advanced Materials Institute, Golden, CO, 1989), pp.1 –
  22. L.J. Brillson, “New Electronic Properties of Metal / III-V Semiconductor Interfaces,” Proceedings of the Materials Research Society, Volume 148 (Materials Research Society, Pittsburgh, PA, 1990).
  23. L.J. Brillson, “Schottky Barriers,” Concise Encyclopedia of Electronic and Optoelectronic Materials, edited by L. C. Kimerling (Pergamon, Amsterdam, 1992), p
  24. L.J. Brillson, “Interface States at Metal / Compound Semiconductor Junctions,” Vacuum 41, 1016 (1990).
  25. L.J. Brillson, “Advances in Controlling Electrical Contacts for Optoelectronics,” in American Vacuum Society Series 10, Conference Proceedings 227, edited by P. Holloway (American Institute of Physics, New York, 1991) p.
  26. L.J. Brillson, “Process-Dependent Electronic Structure at Metallized GaAs Contacts,” Proceedings of the Materials Research Society, Volume 260 (Materials Research Society, Pittsburgh, PA, 1992), p.
  27. L.J. Brillson, “Photoemission of Interfaces: A Link Between Fundamental Research and Industrial Applications,” Proceedings of the Conference on Photoemission: From the Past to Future, G. Margaritondo ed. (Ecole Polytechnique, Lausanne, 1992), ch. 4, pp.124-
  28. L.J. Brillson, “Electronic Structure of Metal/Semiconductor Interfaces from Cathodoluminescence and Soft X-Ray Photoemission Spectroscopies,” Appl. Surf. Sci. 65/66, 667 (1993).
  29. L.J. Brillson, “Schottky Barrier Contacts for Compound Semiconductors,” in Encyclopedia of Advanced Materials, S. Mahajan and L.C. Kimerling, eds. (Pergamon, Oxford, 1992) pp.409-
  30. L.J. Brillson, “Surfaces and Interfaces: Atomic-Scale Structure, Band Bending and Band Offsets,” in Handbook on Semiconductors, Volume 1, edited by P. T. Landsberg (North-Holland, Amsterdam, 1992), ch.7, pp.281-417
  31. L.J. Brillson, “Interface States,” in Contacts to Semiconductors, Fundamentals and Technology, L. J. Brillson ed. (Noyes, Park Ridge, NJ, 1993), pp. 333-413.
  32. L.J. Brillson, “The Chemical-Dependence of Metal-Semiconductor Contacts -A Citation-Classic Commentary on the Structure and Properties of Metal-Semiconductor Interfaces by Brillson,” L. J., Current Contents/Physical Chemical & Earth Sciences, 1993, 42, pp.8-8 (1993).
  33. L.J. Brillson, “Metal-Semiconductor Interfaces,” Surface Science, 299/300, 909 (1994).
  34. L.J. Brillson, “Luminescence Spectroscopy of Semiconductor Surfaces and Interfaces,” Scanning Microscopy Supplement 9, 1995: Luminescence, edited by G. Remond, L. Balk, and D. J. Marshall (Scanning Microscopy Intl., AMF O’Hare (Chicago), 1995), p. 173-
  35. L.J. Brillson, A.P.Young, J. Schafer, H. Niimi, and G. Lucovsky, “Ultrathin Silicon Oxide and Nitride – Silicon Interface States,” in Ultrathin SiO2 and High – K Materials for ULSI Gate Dielectrics, ed. H.R.Huff, M.L.Green, T.Hattori, G. Lucovsky, and C.A.Richter, Proc. Materials Research Society (MRS PressWarrendale, PA, 1999) 567, pp.549-
  36. L.J. Brillson, “Defect Formation at GaN Surfaces and Interfaces,” L.J.Brillson, A.P.Young, T. Levin, G. Jessen, C. Tu,Y.Naoi, F.Ponce, G.J.Lapeyre, Y.Yang, C.Abernathy, and D.McKenzie, Physica B, 273-274, 70-74 (1999).
  37. L.J. Brillson, A.P.Young, T. Levin, G. Jessen, C. Tu,Y.Naoi, F.Ponce, G.J.Lapeyre, Y.Yang, C.Abernathy, and D.McKenzie, “Localized States at GaN Surfaces, Schottky Barriers, and Quantum Well Interfaces,” Journal of Materials Science and Engineering, B75, 218 (2000).
  38. L.J. Brillson, A.P.Young, G.H.Jessen, T.M.Levin, S.T.Bradley, S.H.Goss, and J.Bae, “Low Energy Electron-Excited Nano-Luminescence Spectroscopy of GaN Surfaces and Interfaces,” Applied Surface Science 175-176, 442-449 (2001).
  39. L.J. Brillson, “Nanoscale Luminescence Spectroscopy of Defects at Buried Interfaces and Ultra-thin Films,” J. Vac. Sci. Technol. B19, 1762-1768 (2001).
  40. L.J. Brillson, S.T. Bradley, S. H. Goss, X. Sun, M.J. Murphy, W.J. Schaff, L.F. Eastman, D.C. Look, R.J. Molnar, F.A Ponce, N. Ikeo, and Y. Sakai, “Low Energy Excited Nano-Luminescence Studies of GaN and Related Materials,” Appl. Surf. Sci. 190, pp. 498-507 (2002).
  41. L.J. Brillson, “Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices,” Proc. Wide Band Gap Semiconductors for Photonic and Electronic Devices and Sensors III, eds. E.B. Stokes, R.C. Fitch, Jr., D.N. Buckley, P.C. Chang, D.W. Merfeld, and F. Ren (The Electrochemical Society, Pennington, NY, 2003) pp. 229-
  42. L.J. Brillson, “Electronic Materials and Processing: 1979-2003,” J. Vac. Sci. Technol. 21, S157-159 (2003).
  43. L.J. Brillson, S. Tumakha, R. Okojie, and P. Pirouz, “Electron-Excited Luminescence Spectroscopy of SiC Surfaces and Interfaces,” J. Phys.- Condensed Matter 16, S1733-S1754 (2004).
  44. L.J. Brillson, S. Tumakha, R.S. Okojie, and P. Pirouz, “SiC Studied Via LEEN and Cathodoluminescence Spectroscopy,” Mater. Sci. Forum 457-460, 543-548 (2004).
  45. L.J. Brillson, S.T. Bradley, S. H. Tumakha, S.H. Goss, X. L. Sun, R.S. Okojie, J. Hwang, and W.J. Schaff, “Local Electronic and Chemical Structure at GaN, AlGaN and SiC Heterointerfaces,” Appl. Surf. Sci. 244, 257-263 (2005)
  46. L.J. Brillson,”Interface Bonding, Chemical Reactions, and Defect Formation at Metal-Semiconductor Interfaces,” J. Vac. Sci. Technol. 25, 943-949 (2007).
  47. L.J. Brillson,”Surface and Near-Surface Passivation, Chemical Reaction, and Schottky Barrier Formation at ZnO Surfaces and Interfaces,” Appl. Surf. Sci. 254, 8000-8004 (2008).
  48. L.J. Brillson, H.L. Mosbacker, D. Doutt, M. Kramer, Z.L. Fang, D.C. Look, G. Cantwell, J. Zhang, and J.J. Song, “Nanoscale Depth Resolved Cathodoluminescence Spectroscopy of ZnO Surfaces and Metal Interfaces, ” Superlattices and Microstructures 45, 206-213 (doi:10.1016/j.spmi.2008.11.008
  49. L.J. Brillson, Y. Dong, D. Doutt, D.C. Look, and Z.-Q. Fang, “Massive Point Defect Redistribution Near Semiconductor Surfaces and Interfaces and Its Impact on Schottky Barrier Formation,” Physica B 404, 4768-4773 (2009). doi:10.1016/j.physb.2009.08.151
  50. L.J. Brillson, “Surface Properties and Electrical Contacts on ZnO,” in ZnO Materials for Electronic and Optoelectronic Device Applications, eds. C.W. Litton, D.C.Litton, and T.C. Collins (John Wiley & Sons, Ltd, London, UK, 2011), Ch. IV, pp. 87-
  51. L.J. Brillson and Y. Lu, “ZnO Schottky Barriers and Ohmic Contacts,” Appl. Phys. Rev./ J. Appl. Phys. 109, 121301 (2011). (Cover article) copyright: 2011 American Institute of Physics. [doi:10.1063/1.3581173] Abstract 
  52. L. J. Brillson, “Applications of Depth-Resolved Cathodoluminescence Spectroscopy,” J. Phys. D: Appl. Phys. 45, 183001-183027 (2012). doi:10.1088/0022-3727/45/18/183001
  53. L.J. Brillson, Y. Dong, F. Tuomisto, B.G. Svensson, A. Yu. Kuznetsov, D. Doutt, H.L. Mosbacker, G. Cantwell, J. Zhang, J.J. Song, Z.-Q. Fang, and D.C. Look, “Interplay of Native Point Defects with ZnO Schottky Barriers and Doping,” J. Vac. Sci. Technol. B 30, 050801 (2012).
  54. L.J. Brillson, Y. Dong, F. Tuomisto, B.G. Svensson, A.Yu Kuznetsov, D.Doutt, H.L. Mosbacker, G. Cantwell, J. Zhang, J. J. Song, Z.-Q. Zhang, and D. C. Look, “Native Point Defects at ZnO Surfaces, Interfaces, and Bulk Films,” Phys. Status Solidi C 9, 1566-1569 (2012). (Cover article) doi: 10.1002/pssc.201100538
  55. L.J. Brillson, “Surfaces and Interfaces of Zinc Oxide,” in Semiconductors and Semimetals: Oxide Semiconductors, Vol. 88, ed. B.G. Svensson, S.J. Pearton, and C. Jagadish (SEMSEM, Academic Press, Burlington, 2013). ISBN: 978-0-12-396489-2
  56. J. Wang, P. Mulligan, L.J. Brillson, and L.R. Cao “Review of Using Gallium Nitride for Ionizing Radiation Detection, Appl. Phys. Rev., 2, 031102 (2015). doi: 10.1063/1.4929913
  57. L.J. Brillson, “Contacts for Compound Semiconductors: Schottky Barrier Type,” Reference Module in Materials Science and Materials Engineering, ed. M.S.J. Hasmi (Oxford, Elsevier, 2016) pp.1-9. ISBN: 978-0-12-803581-8
  58. L. J. Brillson, W.T. Ruane, H. Gao, Y. Zhang, J. Luo, H. von Wenckstern, and M. Grundmann, “Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects,” Materials Science in Semiconductor Processing, Proc. 57, 197-209 (2017).
  59. L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, I. Hyland, and M.W. Allen, “Defect Characterization, Imaging, and Control in Wide Band Gap Semiconductors and Devices,” J. Electron. Mat. 47, 4980-4986 (2018). DOI:10:1007/s11664-018-6214-9