Publications – 1986


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1986

  • 66. J. Bregman, Y. Shapira, Z. Calahorra and L.J. Brillson, “Oxygen Diffusion And Reaction At Annealed InSb MOS Interfaces,” Surf. Sci. 178, 188 (1986).
  • 65. R. E. Viturro, M. L. Slade and L.J. Brillson, “Optical Emission Properties of Metal/III-V Compound Semiconductor Interface States,” Phys. Rev. Lett. 57, 487 (1986).
  • 64. L.J. Brillson, M.L. Slade, R.E. Viturro, M.Kelly, N. Tache, G. Margaritondo, J.M. Woodall, G.D. Pettit, P.D. Kirchner, and S.L. Wright, “Absence of Fermi Level Pinning at Metal – InxGa1-xAs (100) Interfaces,” Appl. Phys. Lett. 48, 1458 (1986).
  • 63. L.J.Brillson, M.L. Slade, R.E. Viturro, M. Kelly, N. Tache, G. Margaritondo, J. Woodall, G.D. Pettit, P.D. Kirchner and S.L. Wright, “Fermi Level Pinning and Chemical Interactions at Metal – InxGa1-xAs (100) Interfaces,” J. Vac. Sci. Technol. B 4, 919 (1986).
  • 62. J. Slowik, L.J. Brillson and H. Richter, “Acceptor-like Electron Traps Control Effective Barrier for UHV-Cleaved and Laser Annealed Al / InP,” J. Vac. Sci. Technol. B 4, 974 (1986).
  • 61. L.J. Brillson, “Proceedings of the Topical Conference on Frontiers in Electronic Materials and Processing,” edited by L.J. Brillson (American Institute of Physics, New York, 1986) 338 pages.
  • 60. L.J. Brillson, M.L. Slade, H.W. Richter, H. Vander Plas, and R.T. Fulks, “Titanium-Silicon and Silicon Dioxide Reactions Controlled by Low Temperature Rapid Thermal Annealing,” J. Vac. Sci. Technol. A 4, 993 (1986).