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2022

208. K.H. Lee, B. Noesges, C. McPherson, F. Khan, L.J. Brillson, J. Winter, “Oxidation of Quantum Dots Encapsulated in Block Copolymer Micelles as a Function of Polymer Terminal Charge,” Nanoscale, in press.
207. D.N. Ramdin, M.S. Haseman, K.D. Leedy, and L.J. Brillson, “Optical and Electronic Effects of Rapid Thermal Annealing at Ir-Ga₂O₃ Interfaces,” J. Appl. Phys. 131, 205302 (2022). https://doi.org/10.1063/5.0090161
206. B.A. Noesges, D. Lee, J.-W. Lee, C.-B. Eom, and L.J. Brillson, “Nanoscale interplay of native point defects near Sr-deficient Sr_xTiO₃/SrTiO₃ interfaces,” J. Vac. Sci. Technol A 40, 043291 (2022). (Editor’s Pick) doi: 10.1116/6.0001782

2021

205. J. Zhang, K. McNicholas, S. Balaz, Z.Q. Zeng, D. Schlom, and L.J. Brillson, “Deep Level Defect Spectroscopies of Complex Oxide Surfaces and Interfaces,” J. Vac. Sci. Technol. A 39, 063215 (2021). (Editor’s Pick) https://avs.scitation.org/doi/10.1116/6.0001339
204. H. Gao, S. Muralidharan, Md R. Karim, L.R. Cao, K.D. Leedy, H. Zhao, S. Rajan, D.C. Look, and L.J. Brillson, “Depth-Resolved Cathodoluminescence and Surface Photovoltage Spectroscopies of Gallium Vacancies in β-Ga₂O₃ with Neutron Irradiation and Forming Gas Anneals,” J. Vac. Sci. Technol. B 39, 052205 (2021). (Editor Featured Article) https://doi.org/10.1116/6.0001240
203. Md R. Karim, B.A. Noesges, B.H.D. Jayatunga, M. Zhu, J. Hwang, W.R.L. Lambrecht, L.J. Brillson, K. Kash, H. Zhao, “Experimental determination of the valence band offsets of ZnGeN₂ and (ZnGe)_0.94Ga_0.12N₂ with GaN,” J. Phys. D: Appl. Phys. 54, 245102 (2021). https://iopscience.iop.org/article/10.1088/1361-6463/abee45

2020

202. A. Jarry, M. Walker, S. Theodoru, L. Brillson, and G. Rubloff, “Elucidating Structural Transformations in Li_xV₂O₅ Electrochromic Thin Films by Multimodal Spectroscopies,” Chem. Mater. 32, 7226 (2020). https://dx.doi.org/10.1021/acs.chemmater.0c01478
201. G.M. Foster, A. Koehler, M. Ebrish, J. Gallagher, T. Anderson, B. Noesges, L. Brillson, K.D. Hobart, and F. Kub, “Recovery from Plasma Etching-Induced Nitrogen Vacancies in p-type Gallium Nitride using UV/Ozone Treatments,” Appl. Phys. Lett. 117, 082103 (2020). DOI: 10.1063/5.0021153
200. H. Gao, S. Muralidharan, Md R. Karim, S.M. White, L.R. Cao, K. Leedy, H. Zhao, D.C. Look, and L.J. Brillson, “Neutron Irradiation and Forming Gas Anneal Impact on β-Ga₂O₃ Deep Level Defects,” J. Phys. D: Appl. Phys. 53, 465102 (2020). https://doi.org/10.1088/1361-6463/aba92f
199. M.S. Haseman, B.A. Noesges, S. Shields, J.S. Cetnar, A.N. Reed, H.A. Al-Atabi, J.H. Edgar, L.J. Brillson, “Cathodoluminescence and X-ray Photoelectron Spectroscopy of ScN: Dopant, Defects, and Band Structure,” APL Mater. 8, 081103 (2020); https://doi.org/10.1063/5.0019533
198. M. Walker, A. Jarry, N. Pronin, J. Ballard, G. Rubloff, and L.J. Brillson, “Nanoscale Depth and Lithiation Dependence of V₂O₅ Band Structure by Cathodoluminescence Spectroscopy,” J. Mater. Chem. A 8, 11800 (2020). DOI: 10.1039/d0ta03204b.
197. T. Zhu, D.J. O’Hara, B.A. Noesges, M. Zhu, M.R. Brenner, L.J. Brillson, J. Hwang, J.A. Gupta, and R.K. Kawakami, “Coherent Growth and Characterization of van der Waals 1T-VSe₂ Layers on GaAs(111)B Using Molecular Beam Epitaxy,” Phys. Rev. Mater. 4, 084002 (2020). DOI: https://doi.org/10.1103/PhysRevMaterials.4.084002
196. B.A. Noesges, T. Zhu, J.J. Repicky, S. Yu, F.Yang, J.A. Gupta, R.K. Kawakami and L.J. Brillson, “Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators,” Phys. Rev. Mater. 4, 054001 (2020). (Editors’ Suggestion) DOI: 10.1103/PhysRevMaterials.4.054001
195. M.S. Haseman, Md R. Karim, D. Ramdin, B.A. Noesges, E. Feinberg, B.H.D. Jayatunga, W.R.L. Lambrecht, M. Zhu, J. Hwang, K. Kash, H. Zhao and L.J. Brillson, “Deep Level Defects and Cation Sublattice Disorder in ZnGeN₂,” J. Appl. Phys. 127, 135703 (2020). https://doi.org/10.1063/1.5141335
194. H. Gao, S. Sahu, C. Randall, and L.J. Brillson, “Direct, Spatially-Resolved Observation of Defect States with Electromigration and Degradation in Single Crystal SrTiO₃,” J. Appl. Phys. 127, 094105 (2020). https://doi.org/10.1063/1.5130892
193. T.H. Kim, T.R. Paudel, R.J. Green, K Song, H.-S. Lee, S.-Y. Choi, J. Irwin, B. Noesges, L.J. Brillson, M.S. Rzchowski, G.A. Sawatzky, E.Y. Tsymbal, and C.B. Eom, “Strain-Driven Disproportionation at a correlated oxide metal-insulator transition,” Phys. Rev. B 101, 121105 (R) (2020). DOI: 10.1103/PhysRevB.101.121105
192. L.J. Brillson, H.F. Dylla, and P.J. Feibelman, “Charles B. Duke,” Physics Today 73, 2, 59 (2020). https://doi.org/10.1063/PT.3.4415
191. T.J. Asel, W. Huey, B. Noesges, E. Molotokaite, S-C. Chien, Y. Wang, A. Barnum, C. McPherson, S. Jiang, S. Shields, C. D’Andrea, W. Windl, E. Cinquanta, L. Brillson, and J. Goldberger, “Influence of Surface Chemistry on Water Absorption in Functionalized Germanane,” Chemistry of Materials 32, 1537-1544 (2020). DOI: 10.1021/acs.chemmater.9b04632

2019

190. J. Wang, P. Mulligan, L. Brillson, and L.R. Cao, “Erratum: Review of using gallium nitride for radiation detection,” Appl. Phys. Rev. 6, 029902 (2019). https:///doi.org/10.1063/1.5111124

2018

189. J.W. Cox, G.M. Foster, A. Jarjour, H. von Wenckstern, M. Grundmann, and L.J. Brillson, “Defect Manipulation to Control ZnO Micro-/Nanowire-Metal Contacts,” Nano Lett. 18, 6974 (2018). DOI: 10.1021/acs.nanolett.8b02892
188. I.V. Pinchuk, T.J. Asel, A. Franson, T. Zhu, Y.-M. Lu, L.J. Brillson, E.Johnston-Halperin, J.A. Gupta, and R.K. Kawakami, “Topological Dirac Semimetal Na₃Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy,” APL Materials 6, 086103 (2018). https://doi.org/10.1063/1.5041273
187. T.J. Asel, E. Yanchenko, X. Yang, S. Jiang, K. Krymowski, Y. Wang, A. Trout, D.W. McComb, W. Windl, J.E. Goldberger, and L.J. Brillson, “Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane,” Appl. Phys. Lett. 113, 061110 (2018). (Editor’s Pick) https://doi.org/10.1063/1.5034460
186. I.J.T. Jensen, K.M. Johansen, W. Zhan, V. Venkatachalapathy, L. Brillson, A.Yu. Kuznetsov, and Ø. Prytz, “Bandgap and band edge positions in compositionally graded ZnCdO,” J. Appl. Phys. 124, 015302 (2018). doi.org/10.1063/1.5036710
185. D. Lee, H. Wang, B.A. Noesges, T. Asel, J. Pan, Q. Yan, L. Brillson, X. Wu, and C.-B. Eom, “Identification of a functional point defect in SrTiO₃,” Phys. Rev. Materials, 2, 060403(R) (2018). DOI: 10.1103/PhysRevMaterials.2.060403
184. H. Gao, S. Muralidharan, N. Pronin, Md.R. Karim, S.M. White, T. Asel, G. Foster, S. Krishnamoorthy, S. Rajan, L.R. Cao, M. Higashiwaki, H. von Wenckstern, M. Grundmann, H. Zhao, D.C. Look, and L.J. Brillson, “Optical Signatures of Deep Level Defects in Ga₂O₃,” Appl. Phys. Lett. 112, 242102 (2018). doi.org/10.1063/1.5026770
183. H. Lee, N. Campbell, J. Lee, T.J. Asel, T.R. Paudel, H. Zhou, J.W. Lee, B. Noesges, J. Seo, B. Park, L.J. Brillson, S.H. Oh, E.Y. Tsymbal, M.S. Rzchowski, and C.B. Eom, “Direct observation of a two-dimensional hole gas at oxide interfaces,” Nature Materials 17, 231-236 (2018). https://doi.org/10.1038/s41563-017-0002-4
182. A. Jarjour, J.W. Cox, W.T. Ruane, H. Von Wenckstern, M. Grundmann, and L.J. Brillson, “Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach,” Ann. Phys. (Berlin), 530, 1700335 (2018). DOI: 10.1002/andp.201700335

2017

181. G.M. Foster, H. Gao, G. Mackessy, A.M. Hyland, M.W. Allen, B. Wang, D.C. Look, and L.J. Brillson, “Impact of Defect Distribution on IrO_x/ZnO Interface Doping and Schottky Barriers,” Appl. Phys. Lett. 111, 101604 (2017). doi: 10.1063/1.4989539
180. J.R. Young, M. Chilcote, M. Barone, J. Xu, J. Katoch, Y.K. Luo, S. Muller, T.J. Asel, S.K. Fullerton-Shirey, R. Kawakami, J.A. Gupta, L.J. Brillson, and E.Johnston-Halperin, “Uniform large-area growth of nanotemplated high-quality monolayer MoS₂,” Appl. Phys. Lett. 110, 263103 (2017). doi.org/10.1063/1.4989851

2016

179. S. Jiang, K. Krymowski, T. Asel, M. Arguilla, N. Cultrara, E. Yanchenko, X. Yang, L. Brillson, W. Windl, and J. Goldberger, “Tailoring the Electronic Structure of Covalently Functionalized Germanane via the Interplay of Ligand Strain and Electronegativity,” Chemistry of Materials, 28, 8071-8077 (2016). DOI: 10.1021/acs.chemmater.6b04309.
178. G.M. Foster, G. Faber, Y.-F. Yao, C.C. Yang, E.R. Heller, D.C. Look, and L.J. Brillson, “Direct Measurement of Defect and Dopant Abruptness at High Electron Mobility ZnO Homojunctions,” Appl. Phys. Lett. 109, 143506 (2016). doi: 10.1063/1.4963888.
177. H. Gao, T.J. Asel, J.W. Cox, Y. Zhang, Jian Luo, and L.J. Brillson, “Native Point Defect Formation in Flash Sintered ZnO Studied by Depth-Resolved Cathodoluminescence Spectroscopy,” J. Appl. Phys. 120, 105302 (2016). doi: 10.1063/1.4962316.
176. W.T. Ruane, K. Leedy, D.C. Look, G. Farlow, H. von Wenckstern, M. Grundmann, and L.J. Brillson, “Defect Segregation and Optical Emission In ZnO Nanowires and Microwires,” Nanoscale 8, 7631 (2016). DOI: 10.1039/c5nr08248j.

2015

175. J. Wang, P. Mulligan, L. Brillson, and L.R. Cao, “Review of using gallium nitride for radiation detection,” Appl. Phys. Rev. 2, 031102 (2015) https://doi.org/10.1063/1.4929913
174. T.J. Asel, H. Gao, T.J. Heinl, D. Adkins, P.M. Woodward, J. Hoffman, A. Bhattacharya, and L.J. Brillson, “Near-Nanoscale-Resolved Energy Band Structure of LaNiO₃/La_2/3Sr_1/3MnO₃/SrTiO₃ Heterostructures and their Interfaces,” J. Vac. Sci. Technol. B 33, 04E103, (2015). doi:10.1116/1.4922270.
173. G.M. Foster, J. Perkins, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson, “Native point defect energies, densities, and electrostatic repulsion across (Mg,Zn)O alloys,” Phys. Status Solidi A, 212, 1448-1454 (2015). DOI 10.1002/pssa.201532285.
172. Z.Q. Zeng, A. Podpirka, S.W. Kirchoefer, T.J. Asel, and L.J. Brillson, “Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO₃,” Appl. Phys. Lett. 106, 182903 (2015). doi: 10.1063/1.4919891.
171. J. Perkins, G.M. Foster, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson, “Impact of Mg content on native point defects in Mg_xZn_1-xO (0≤x≤0.56),” APL Mat. 3, 062801 (2015). http://dx.doi.org/10.1063/1.4915491287.

2014

170. M.M. Rutkowski, K. McNicholas, Z.Q. Zeng, F. Tuomisto, and L.J. Brillson, “Optical identification of oxygen vacancy formation at SrTiO₃-(Ba,Sr)TiO₃ heterostructures,” J. Phys. D: Appl. Phys. 47, 255303 (2014). doi:10.1088/0022-3727/47/25/255303 Selected by the editors for “Highlights of 2014 collection.”
169. E.J. Katz, C.- H. Lin, J.Qui, Z. Zhang, U.K. Mishra, L. Cao, and L.J. Brillson, “Neutron irradiation effects on metal-gallium nitride contacts,” J. Appl. Phys. 115, 123705 (2014). doi: 10.1063/1.4869552

2013

168. D.R. Doutt, S. Balaz, L. Isabella, D.C. Look, K.D. Leedy and L.J. Brillson, “Role of native point defects and Ga diffusion on electrical properties of degenerate Ga-doped ZnO,” Phys. Status Solidi B 250, 2114 (2013). DOI: 10.1002/pssb.201200945
167. L.J. Brillson, Z. Zhang, D.R. Doutt, D.C. Look, B.G. Svensson, A.Yu. Kuznetsov and F. Tuomisto, “Interplay of dopants and native point defects in ZnO,” Phys. Status Solidi B 250, 2110 (2013). DOI: 10.1002/pssb.201200943
166. S. Balaz, Z. Zeng, and L.J. Brillson, “Heterojunction Band Offsets and Dipole Formation at BaTiO₃/SrTiO₃ Interfaces,” J. Appl. Phys. 114, 183701 (2013). doi:10.1063/1.4829695
165. S. Balaz, S.H. Porter, P.M. Woodward, and L.J. Brillson, “Electronic Structure of Tantalum Oxynitride Perovskite Photocatalysts,” Chem. Mater. 25, 3337 (2013). DOI: 10.1021/cm401815w.
164. C.- H. Lin, E.J. Katz, J. Qui, Z. Zhang, U.K. Mishra, L. Cao, and L.J. Brillson, “Neutron irradiation effects on gallium nitride-based Schottky diodes,” Appl. Phys. Lett. 103, 162106 (2013). doi.org/10.1063/1.4826091
163. Z. Zhang, V. Quemener, C.-H. Lin, B.G. Svensson, and L.J. Brillson, “Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO,” Appl. Phys.Lett. 103, 072107 (2013). doi: 10.1063/1.4818712
162. J. Qiu, E. Katz, C.-H. Lin, L. Cao, and L.J. Brillson, “The effect of thermal reactor neutron irradiation on semi-insulating GaN,” Radiation Effects & Defects in Solids: Incorporating Plasma Science and Plasma Technology (Taylor & Francis, London, 2013). doi:10.1080/10420150.2013.792819
161. M.M. Rutkowski, K.M. McNicholas, Z. Zeng, and L.J. Brillson, “Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system,” Rev. Sci. Instrum. 84, 065105 (2013). doi: 10.1063/1.4804195
160. R.A. Rosenberg, Y. Choi, K. Vijayalakshmi, M. Kareev, J. Tchakhalian, S. Balaz, and L.J. Brillson, “Depth resolved studies of SrTiO₃ defects using x-ray excited optical luminescence and cathodoluminescence,” Appl. Phys. Lett. 102, 192910 (2013). doi.org/10.1063/1.4807117
159. C-H. Lee, N.J. Podraza, Y. Zhu, R.F. Berger, S. Shen, M. Sestak, R.W. Collins, L.F. Kourkoutis, J.A. Munday, H. Wang, Q. Mao, X. Xi, L.J. Brillson, J.B. Neaton, D.A. Muller, and D.G. Schlom, “Effect of reduced dimensionality on the optical band gap of SrTiO₃,” Appl. Phys. Lett. 102, 122901 (2013). doi:org/10.1063/1.4798241
158. Z. Zhang, D.C. Look, R. Schifano, K.M. Johansen, B.G. Svensson, and L.J. Brillson, “Process dependence of H passivation and doping in H-implanted ZnO,” J. Phys. D.: Appl. Phys. 46, 055107 (2013). doi:10.1088/0022-3727/46/5/055107

2012

157. C.-H. Lin, T.A. Merz, D.R. Doutt, J. Joh, J.A. Del Alamo, U.K. Mishra, and L.J. Brillson, “Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale,” IEEE Trans. Electron. Dev. 59, 2667 (2012). doi: 10.1109/TED.2012.2206595
156. Z. Zhang, K.E. Knutsen, T. Merz, A. Yu. Kuznetsov, B.G. Svensson, L.J. Brillson, “Control of Configuration and Electrical Properties of Li – Doped ZnO,” J. Phys. D: Appl. Phys. 45, 375301 (2012). doi:10.1088/0022-3727/45/37/375301
155. P. Casal, X. Wen, S. Gupta, T. Nicholson, A. Theiss, Y. Wang, L. Brillson, W. Lu, and S.C. Lee, “ImmunoHFET operation in physiological salt environments,” Phil. Trans. R. Soc. A 370, 2474-2488 (2012). doi:10.1098/rsta.2011.0503
154. Z. Zhang, T.A. Merz, K-E. Knutsen, A. Yu. Kuznetsov, B.G. Svensson and L.J. Brillson “Thermal process dependence of Li configuration and electrical properties in Li-doped ZnO,” Appl. Phys. Lett. 100, 042107 (2012). doi:10.1063/1.3679708
153. E.J. Katz, H.L. Hughes, M.E. Twigg, B.J. Mrstik, G. Lucovsky, and L.J. Brillson, “Electrical and Nanoscale Depth Resolved Properties of Plasma Deposited Silicon- Rich SiO_x Oxides for Radiation Tolerant Electronics,” J. Radiation Effects, Research and Engineering, 30 (1), 133 (2012).

2011

152. D.C. Look, K.D. Leedy, L. Vines, B.G. Svensson, A. Zubiaga, F. Tuomisto, D.R. Doutt, and L.J. Brillson, “Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO,” Phys. Rev. B 84, 115202 (2011).
151. X. Wen, S. Gupta, T.R. Nicholson III, L. Brillson, S.C. Lee, and W. Lu, “AlGaN/GaN HFET biosensors working at sub-threshold regime for sensitivity enhancement,” Physica Status Solidi C 8, 2489-2491 (2011). doi: 10.1002pssc.201001174
150. S. Shen, Y. Liu, R.G. Gordon, and L.J. Brillson, “Impact of Ultrathin Al₂O₃ Diffusion Barriers on Defects in High-κ LaLuO₃ on Si,” Appl. Phys. Lett. 98, 172902 (2011).
149. S. Gupta, H.-H. Wu,, K. J. Kwak, P. Casal, T. R. Nicholson III, X. Wen, A. Ramesh, B. Bhushan, P.R. Berger, W. Lu, L.J. Brillson, Stephen Craig Lee, “Interfacial design and structure of protein/polymer films on oxidized AlGaN,” J. Phys. D, Applied Physics, 44, 034010 (2011) (Invited). doi: 10.1088/0022-3727/44/3/034010
148. Yiqun Liu, Shaoping Shen, L.J. Brillson, and R.G. Gordon, “Impact of ultrathin Al₂O₃ barrier layer on electrical properties of LaLuO₃ metal-oxide-semiconductor devices,” Appl. Phys. Lett. 98, 122907 (2011).
147. T.A. Merz, D.R. Doutt, T. Bolton, Y. Dong, and L.J. Brillson, “Native Defect Formation with ZnO Nanostructure Growth,” Surf. Sci. Lett. 605, L20-L23 (2011). doi:10.1016/j.susc.2010.12.021
146. E.J. Katz, Z. Zhang, H.L. Hughes, K.-B. Chung, G. Lucovsky, and L.J. Brillson, “Nanoscale depth-resolved electronic properties of SiO₂/SiO_x/SiO₂ for device-tolerant electronics,” J. Vac. Sci. Technol. B 29 (1), 011027 (2011).

2010

147. T. R. Nicholson III, S. Gupta, X. Wen, H.-H. Wu, A. Ramish, P. Casal, K.J. Kwak, B. Bhushan, P.R. Berger, W. Lu, L.J. Brillson, S.C. Lee, “Rational enhancement of nanobio-technological device function illustrated by partial optimization of a protein sensing field effect transistor,” Proc. IMechE, Part N: J. Nanoengineering and Nanosystems 223, 149 (2010) (Invited). Most highly downloaded paper published in JNN in 2010.
146. M.J. Tadjer, T.I. Feygelson, K.D. Hobart, J.D. Caldwell, T.J. Anderson, J.E. Butler, C.R. Eddy, Jr., D.K. Gaskill, K.K. Lew, B.L. VanMil, R.L. Myers-Ward, F.J. Kub, G. Sollenberger, and L. Brillson, “On the high curvature coefficient rectifying behavior of nanoscrystalline diamond heterojunctions to 4H-SiC,” Appl. Phys. Lett. 97, 193510 (2010).
145. C-H. Lin, D.R. Doutt, U.K. Mishra, T.A. Merz, and L.J. Brillson, “Field-Induced Strain Degradation of AlGaN/GaN HEMTs on a Nanometer Scale,” Appl. Phys. Lett., 97, 223502 (2010).
144. Y. Dong, Z.-Q. Fang, D.C. Look, D.R. Doutt, G. Cantwell, J. Zhang, and J.J. Song and L.J. Brillson, “Defects at Oxygen Plasma Cleaned ZnO Polar Surfaces,” J. Appl. Phys. 108, 103718 (2010). doi:10.1063/1.3514102
143. M. Rutkowski, A.J. Hauser, F.Y. Yang, R. Ricciardo, T. Meyer, P.M. Woodward, A. Holcombe, P. Morris, and L.J. Brillson, “X-Ray Photoemission Spectroscopy of Sr₂FeMoO₆ Film Stoichiometry and Valence State,” J. Vac. Sci. Technol. A 28, 1240 (2010).
142. Y. Dong, F. Tuomisto, B.G. Svensson, A. Yu. Kuznetsov, and L.J. Brillson, “Vacancy Defect and Defect Cluster Energetics In Ion-implanted ZnO,” Phys. Rev. B, Rapid Communications 81, 081201(R) (2010). doi: 10.1103/PhysRevB.81.081201

2009

141. C-H. Lin, T.A. Merz, D.R. Doutt, M.J. Hetzer, J. Joh, J.A. del Alamo, U.K. Mishra and L.J. Brillson, “Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors,” Appl. Phys. Lett. 95, 033510 (2009).
140. M.J. Hetzer, L.J. Brillson, and D.G. Jensen, “Interfacial Alloying and Defect Formation Inside Operational CIGS Solar Cells,” Proceeding of the 34th IEEE Photovoltaic Specialists Conference (IEEE, Piscataway, NJ, 2009), pp. 2061-2064.
139. J. Zhang, M. Rutkowski, L.W. Martin, T. Conry, R. Ramesh, J.F. Ihlefeld, A. Melville, D.G. Schlom, and L.J. Brillson, “Surface, Bulk and Interface Electronic States of Epitaxial BiFeO₃,” J. Vac. Sci. Technol. B 27, 2012-2014 (2009).
138. Y. Dong, Z.-Q. Fang, D.C. Look, D.R. Doutt, M.J. Hetzer, and L.J. Brillson, “Polarity-Related Asymmetry at ZnO Surfaces and Metal Interfaces,” J. Vac. Sci. Technol. B 27, 1710-1716 (2009). doi: 10.1116/1.3119681
137. D. Doutt, Y. Dong, M. Myers, D. Tayim, C. Zgrabik, Z.-Q. Fang, D.C. Look, G. Cantwell, J. Zhang, J.J. Song, H.L. Mosbacker, and L.J. Brillson, “Impact of Surface Morphology and Polarity on ZnO Optical Emission,” Mat. Res. Soc. Symp. Proc. Vol. 1109 (Materials Research Society, Pittsburgh, PA, 2009) B06-15.
136. J. Zhang, J. Chakhalian, M. Kareev, J. Liu, S. Prosandeev, and L.J. Brillson, “Depth-Resolved Subsurface Defects in Chemically Etched SrTiO₃,” Appl. Phys. Lett. 94, 092904 (2009).
135. Z.-Q. Fang, B. Claflin, D.C. Look, Y-F. Dong, and L.J. Brillson, “Metal contacts on bulk ZnO crystal treated with remote oxygen plasma,” J. Vac. Sci. Technol. B 27, 1774-1779 (2009). doi: 10.1063/1.2974983
134. D. Doutt, H.L. Mosbacker, G. Cantwell, J.Zhang, J.J. Song, and L.J. Brillson, “Impact of Near-Surface Defects and Morphology on ZnO Luminescence,” Appl. Phys. Lett. 94, 042111 (2009).
133. Z.-Q. Fang, B. Claflin, D.C. Look, Y-F. Dong, and L.J. Brillson, “Metal contacts on bulk ZnO crystal treated with remote oxygen plasma,” Proc. 5th Int. Workshop on ZnO and Related Materials, J. Vac. Sci. Technol. B 27, 1774 (2009).
132. L.J. Brillson, H.L. Mosbacker, D. Doutt, M. Kramer, Z.L. Fang, D.C. Look, G. Cantwell, J. Zhang, and J.J. Song, “Nanoscale Depth Resolved Cathodoluminescence Spectroscopy of ZnO Surfaces and Metal Interfaces, “ Superlattices and Microstructures, 45, 206-213 (2009). doi:10.1016/j.spmi.2008.11.008

2008

131. S. Gupta, M. Elias, X. Wen, J. Shapiro, L. Brillson, W. Lu, and S. Lee, “Detection of clinically relevant levels of biological analyte under physiologic buffer using planar field effect transistors,” Biosensors and Bioelectronics,” 24 (4), 505-511(2008).
130. Y. Dong, Z-Q. Fang, D.C. Look, G. Cantwell, J. Zhang, J.J. Song, and L.J. Brillson, “Zn- and O-face effects at ZnO surfaces and metal interfaces,” Appl. Phys. Lett. 93, 172111 (2008). doi: 10.1063/1.2974983
129. Z.-Q. Fang, B. Claflin, D.C. Look, Y.F. Dong, H.L. Mosbacker, and L.J. Brillson, “Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy,” J. Appl. Phys. 104, 063707 (2008).
128. D.R. Doutt, C. Zgrabik, H.L. Mosbacker, and L.J. Brillson, “Impact of near-surface native point defects, chemical reactions and surface morphology on ZnO interfaces,” J. Vac. Sci. Technol. B 26, 1477 (2008).
127. J. Zhang, S. Walsh, C. Brooks, D.G. Schlom, and L.J. Brillson, “Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO₃,” J. Vac. Sci. Technol. B 26, 1466 (2008).
126. P.E. Smith, M. Lueck, S.A. Ringel, and L.J. Brillson, “Atomic Diffusion and Interface Electronic Structure at In_0.49Ga_0.51P/GaAs Heterojunctions,” J. Vac. Sci. Technol. B 26, 89-95 (2008).
125. A.J. Hauser, J. Zhang, L. Mier, R.A. Ricciardo, P.M. Woodward, T.L. Gustafson, L.J. Brillson, and F.Y. Yang, “Characterization of electronic structure and defect states of thin epitaxial BiFeO₃ films by UV-Vis absorption and cathodoluminescence spectroscopies,” Appl. Phys. Lett. 92, 222901(2008).
124. Y.M. Strzhemechny, M. Bataiev, S.P. Tumakha, S.H. Goss, C.L. Hinkle, C.C. Fulton, G. Lucovsky and L.J. Brillson “Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO₂ and SiO₂-HfO₂-SiO₂-Si Stacks,” J. Vac. Sci. Technol. B 26, 232-243 (2008).
123. E. Eteshola, M.T. Keener, M. Elias, J. Shapiro, L.J. Brillson, B. Bhushan and S.C. Lee, “Engineering Functional Protein Interfaces for Immunologically Modified Field Effect Transistor (ImmunoFET) by Molecular Genietic Means,” J. Royal Soc. Interface 5, 123-127 (2008).

2007

122. E. Eteshola, M.T. Keener, D.R. Tokachichu, B.R. Cipriany, M. Gao, P.D. Barnes, L.J. Brillson, B. Bhushan and S.C. Lee, “Engineering Biointerfaces for Distance Dependent Nano/Micro-scale Sensor Devices,” Mater. Res. Soc. Proc. Symp. N (Molecular Electronics), (2007).

2006

121. M. Gao, S.T. Bradley, Y. Cao, D. Jena, Y. Lin, S.A. Ringel, J. Hwang, W.J. Schaff, and L.J. Brillson, “Composition modulation and optical emission in AlGaN epitaxial films,” J. Appl. Phys. 100, 103512 (2006).
120. D.J. Ewing, L.M. Porter, Q. Wahab, S.P. Tumakha, L.J. Brillson, T.S. Sudharshan, and X.Y. Ma, “A Study of Inhomogeneous Schottky Diodes on n-type 4H-SiC,” Mater. Sci. Forum, 527-529, 911-914 (2006).
119. D.E. Walker Jr., R.C. Fitch, Jr., J.K. Gillespie, G.H. Jessen, P.D. Cassity, J.R. Breedlove, and L.J. Brillson, “Controlled gate surface processing of AlGaN/GaN high electron mobility transistors,” Appl. Phys. Lett. 89, 183523 (2006).

2005

118. E. Eteshola, L.J. Brillson, and S.C. Lee, “Selection and characteristics of peptides that bind thermally grown silicon dioxide films,” Biomolecular Engineering, 22, 202-204 (2005).

2004

117. A.P. Karmarkar, B. Jun, D.M. Fleetwood, R.D. Schrimpf, R.A. Weller, B.D. White, L.J. Brillson, and U.K. Mishra, “Proton Irradiation Effects on GaN-Based High Electron-Mobility Transistors with Si-Doped Al_xGa_1-xN and Thick GaN Cap Layers,” IEEE Trans. Nuclear Sci., Proc. 41st Annual Int’l. Nucl. Space Radiation Effects Conf. 51 (6) 3801-3806 (2004).
116. X. Weng, R.S. Goldman, V. Rotberg, N. Bataiev, and L.J. Brillson, “Origins of Luminescence from Nitrogen-Ion-Implanted-Epitaxial GaAs,” Appl. Phys. Lett. 85, 2774-2776 (2004).
115. S.T. Bradley, L.J. Brillson, J. Hwang, and W.J. Schaff, “Surface Cleaning and Annealing Effects on Ni/AlGaN Interface Atomic Composition and Schottky Barrier Height,” Appl. Phys. Lett. 85, 1368-1370 (2004).
114. X.L. Sun, S.T. Bradley, G.H. Jessen, D.C. Look, R.J. Molnar, and L.J. Brillson, “Micro-Auger Electron Spectroscopy Studies of Chemical and Electronic Effects at GaN-Sapphire Interfaces,” J. Vac. Sci. Technol. A 22, 2284-2289 (2004).
113. Y.M. Strzhemechny, H.L. Mosbacker, D.C. Look, D.C. Reynolds, C.W. Litton, N.Y. Garces, N.C. Giles, L.E. Halliburton, S. Niki, and L.J. Brillson, “Remote Hydrogen Plasma Doping of Single Crystal ZnO,” Appl. Phys. Lett. 84, 2545-2547 (2004).

2003

112. X. Hu, A.P. Karmarkar, B. Jun, D.M. Fleetwood, R.D. Schrimpf, R.D. Geil, R.A. Weller, B.D. White, M. Bataiev, L.J. Brillson, and U.K. Mishra, “Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors,” IEEE Trans. Nuclear Sci., Proc. 40th Annual Int’l. Nucl. Space Radiation Effects Conf. 50 (6) 1791-1796 (2003).
111. B.D. White, M. Bataiev, S.H. Goss, X. Hu, A. Karmarkar, D.M. Fleetwood, R.D. Schrimpf, S.T. Pantelides, W.J. Schaff, and L.J. Brillson, “Electrical, Spectral, and Chemical Properties of 1.8 MeV Proton Irradiated AlGaN/GaN HEMT Structures as a Function of Proton Fluence,” IEEE Trans. Nuclear Sci., Proc. 40th Annual Int’l. Nucl. Space Radiation Effects Conf. 50 (6) 1934-1941 (2003).
110. Y.M. Strzhemechny, J. Nemergut, P.E. Smith, J. Bae, D.C. Look, and L.J. Brillson, “Remote Hydrogen Plasma Processing of ZnO Single Crystal Surfaces,” J. Appl. Phys. 94 (7), 4256-4262 (2003).
109. E.J. Miller, D.M. Schaadt, C.W. McKinney, E.T. Yu, X. Sun, L.J. Brillson, P. Waltereit, C. Poblenz, and J.S. Speck, “Origin and Microscopic Mechanism for Suppression of Leakage Currents in Schottky Contacts to GaN Grown by Molecular-Beam Epitaxy,” J. Appl. Phys. 94, 7611-7615 (2003).
108. G.H. Jessen, R.C. Fitch, J.K. Gillespie, G.D. Via, B.D. White, S.T. Bradley, D.E. Walker Jr., and L.J. Brillson, “The Effects of Deep Level Defects on Ohmic Contact and Frequency Performance of AlGaN/GaN HEMTs,” Appl. Phys. Lett. 83, 485-487 (2003).

2002

107. D.C. Look, R.L. Jones, X.L. Sun, L.J. Brillson, J. Ager, S.S. Park, K.Y. Lee, R.J. Molnar, and J.E. Maslar, “Electrical and Optical Properties of GaN/Al2O3 Interfaces,” J. Phys.: Condens. Matter 14, 13337-13344 (2002).

2001

106. R.S. Okojie, D. Lukco, L.J. Brillson S. Tumakha, G. Jessen, M. Zhang and P. Pirouz, “Direct Observation of Oxidation-Induced 4H-SiC to 3C-SiC Polytypic Transformation,” Appl. Phys. Lett. 79, 3056-3058 (2001).
105. S.H. Goss, X. Sun, L.J. Brillson, D.C. Look, and R.J. Molnar, “Microcathodoluminescence of Impurity Doping at Gallium Nitride/Sapphire Interfaces,” Appl. Phys. Lett. 78, 3630-3632 (2001).
104. S.H. Goss, L.J. Brillson, and S.S.K. Parkin, “Analysis of Tunneling Magnetoresistance Structures by Low Energy Electron Nanoscale Luminescence Spectroscopy,” J. Vac. Sci. Technol. A 19, 1199-1202 (2001).

2000

103. B.D. White, L.J. Brillson, S.C. Lee, D.M. Fleetwood, R.D. Schrimpf, S.T. Pantelides, Y.-M. Lee, and G. Lucovsky, “Low Energy Electron-Excited Nanoscale Luminescence: A Tool to Detect Trap Activation by Ionizing Radiation,” IEEE Trans. Nuclear Sci. 47, 2276-2280 (2000).
102. S.T. Bradley, A.P. Young, L.J. Brillson, M.J. Murphy, and W.J. Schaff, “Role of Barrier and Buffer Layer Defect States in AlGaN/GaN 2DEG HEMT Structures,” J. Electron. Mater. 30, 123-128 (2000).

1999

101. T.M. Levin, G.H. Jessen, F.A. Ponce and L.J. Brillson, “Localized States at InGaN/GaN Quantum Well Interfaces,” Appl. Phys. Lett. 75, 3835-3837 (1999).
100. T.M. Levin, G.H. Jessen, F.A. Ponce and L.J. Brillson, “Depth-Resolved Electron-Excited Nanoscale Luminescence Spectroscopy Studies of Defects Near GaN/InGaN/GaN Quantum Wells,” J. Vac. Sci. Technol. B 17, 2545-2552 (1999).
99. A. Hierro, D. Kwon, S. H. Goss, L.J. Brillson, and S. A. Ringel, “Evidence for a Dominant Mid-Gap Trap in n-ZnSe Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 75, 832 (1999).
98. T.M. Levin, A.P. Young, J. Schäfer, L.J. Brillson, J.D. MacKenzie, and C.R. Abernathy, “Low Energy Cathodoluminescence Spectroscopy of Erbium-Doped Gallium Nitride Surfaces,” J. Vac. Sci. Technol. A 17, 3437-3442 (1999).
97. A.Hierro, D. Kwon, S.A.Ringel, L.J. Brillson, J.Schaefer. A.P.Young, A. Franciosi, “Deep Level Characterization of Interface – Engineered ZnSe Layers on GaAs Grown by Molecular Beam Epitaxy,” Proc. Materials Research Society (MRS Press, Warrendale, PA, 1999) 535, pp.99-104.

1998

96. J. Schäfer, A.P.Young, L.J. Brillson, H. Niimi, and G. Lucovsky, “Characterization of the Interface Between Plasma-Oxidized SiO₂ and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS),” Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, Hiroshima, pp.134-135 (1998).

1997

95. X. Yang, L.J. Brillson, and K.-Y. Law, “Low Energy Cathodoluminescence Spectroscopy of SiO₂ Nanoparticles,” J. Vac. Sci. Technol. A 15, 880 (1997).

1996

94. X. Yang, A.D. Raisanen, L.J. Brillson, A. Franciosi, L. Vanzetti, L. Sorba, M. Grundmann and D. Bimberg, “Evolution of Deep Levels and Internal Photoemission with Annealing Temperature at ZnSe/GaAs Interfaces,” J. Vac. Sci. Technol. B 14, 2961 (1996).
93. X. Yang, A.D. Raisanen, L.J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, “Internal Photoemission and Deep Level Luminescence at ZnSe/GaAs Heterointerfaces,” J. Vac. Sci. Technol. A 14, 867 (1996).

1995

92. H.F. Dylla, S. Benson, J. Bisognano, C.L. Bohn, L. Cardman, D. Engwall, J. Fugitt, K. Jordan, D. Kehne, Z. Li, H. Liu, L. Merminga, G.R. Neil, D. Neuffer, M. Shinn, C. Sinclair, M. Wiseman, D.P. Henkel, H. Helvajian, L.J. Brillson, and M.J. Kelley, “A High-Average-Power FEL for Industrial Applications,” Proc. 1995 Particle Accelerator Conference (Dallas, TX, 1995).

1994

91. P.M. Fauchet, C. Peng, L. Tsybeskov, Ju. V. Vandyshev, A. Dubois, L. McLoud, S.P. Duttagupta, J. M. Rehm, G.L. McLendon, E. Ettedgui, Y. Gao, F. Seferth, S.K. Kurinec, A. Raisanen, L.J. Brillson, T.E. Orlowski, and G.E. Carver, “Prospects for Light-Emitting Diodes Made from Porous Silicon from the Blue to Beyond 1.5 um,” in Advanced Photonics Materials for Information Technology, ed. S. Etemad (SPIE, Bellingham, WA, 1994), Vol. 2144, pp. 34-50.

1993

90. P.M. Fauchet, E. Ettedgui, A. Raisanen, L.J. Brillson, F. Seiferth, S.K. Kurinec, Y. Gao, C. Peng, and L. Tsybeskov, “Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon?, in Si-Based Optoelectronics,” ed. M.A.Tischler, R.T.Collins, M.L.W.Thewalt, and G. Arbstreiter, Materials Research Society Symposium Proceedings, Vol. 298 (MRS, Pittsburgh, PA, 1993), p. 271.

1992

89. I.M. Vitomirov, A.D. Raisanen, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Impact of Processing on Al/GaAs(100) Interface States,” Solid State Commun. 84, 61 (1992).
88. I.M. Vitomirov, A.D. Raisanen, A.C.Finnefrock, R.E. Viturro, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Geometric Ordering, Surface Chemistry, Band Bending, and Work function at Decapped GaAs(100) Surfaces,” Phys. Rev. B 46, 13293 (1992).
87. I.M. Vitomirov, A. Raisanen, A. C. Finnefrock, R.E. Viturro, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Temperature-Dependent Chemical and Electronic Structure of Reconstructed GaAs(100) Surfaces,” J. Vac. Sci. Technol. B 10, 1898 (1992).
86. S. Chang, J.L. Shaw, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Inhomogeneous and Wide Range of Schottky Barrier Formation at Metal / GaAs(100) Interfaces Observed with Electrical Measurements,” J. Vac. Sci. Technol. B 10, 1932 (1992).
85. I.M. Vitomirov, A.D. Raisanen, R.E. Viturro, S. Chang, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Surface and Interface States for GaAs(100) (1×1) and (4×2)-c(8×2) Reconstructions,” J. Vac. Sci. Technol. A 10, 749 (1992).
84. G. Hodes, E. Watkins, D. Mantell, M. Peisach, A. Wold, and L.J. Brillson, “WSe₂ – Based Schottky Junctions: The Effect of Polyiodide Treatment on Junction Behavior,” J. Appl. Phys. 71, 5077 (1992).
83. S. Chang, I. M. Vitomirov, C. Mailhiot, L.J. Brillson, D.S. Rioux, Y.J. Kime, P.D. Kirchner, D. Pettit, and J.M. Woodall, “Electronic and Chemical Structure of Al and Au Interfaces with Vicinal GaAs (100) Surfaces,” Phys. Rev. B 45, 13438 (1992).

1991

82. S. Chang, I. Vitomirov, L.J. Brillson, D.S. Rioux, P.D. Kirchner, D. Pettit, and J.M. Woodall, “Increased Range of Fermi Level Stabilization at Metal / Melt-Grown GaAs (100) Interfaces,” J. Vac. Sci. Technol. B 9, 2129 (1991).
81. I. Vitomirov, S. Chang, L.J. Brillson, D.F. Rioux, S. Sivananthan, and J.P. Faurie, “Au Interfaces with Epitaxially-Grown CdTe (111):Chemistry and Barrier Heights,” J. Vac. Sci. Technol. A 9, 966 (1991).
80. S. Chang, L.J.Brillson, D.S. Rioux, P.D. Kirchner D. Pettit, and J.M. Woodall, “Correlation of Interfacial Chemistry, Barrier Height, and Step Density for Al on GaAs (100) Vicinal Surfaces,” J. Vac. Sci. Technol. A 9, 902 (1991).
79. S. Chang, L.J. Brillson, D.S. Rioux, S. Kirchner, D. Pettit, and J.M. Woodall, “Electrically-Active Steps at Vicinal Metal / GaAs (100) Interfaces,” Phys. Rev. B, Rapid Commun. B 44, 1391 (1991).

1990

78. S. Chang, L.J. Brillson, Y. J. Kime, D.S. Rioux, P.D. Kirchner, D. Pettit, and J.M. Woodall, “Orientation – Dependent Chemistry and Schottky Barrier Formation at Metal – GaAs Interfaces,” Proceedings of the Twentieth International Conference on the Physics of Semiconductors, Thessaloniki, Greece, edited by J. Joannopoulos (World Scientific, Singapore, 1990), p. 351.
77. S. Chang, I. Vitomirov, L.J. Brillson, D.F. Rioux, P.D. Kirchner, G.D. Pettit, and J.M.Woodall, “Confirmation of Temperature – Dependent Photovoltaic Effect on Fermi Level Measurements by Photoemission Spectroscopy,” Phys. Rev. B, Rapid Commun. 41, 12299 (1990).
76. L.J. Brillson and Fred H. Pollak, “Surface and Interface Analysis of Microelectronic Materials Processing and Growth,” ed. (SPIE, Bellingham, WA, 1990), SPIE Proceedings 1186.
75. S. Chang, L.J. Brillson, Y.J. Kime, D S. Rioux, P. D. Kirchner, D. Pettit, and J.M. Woodall, “Metal / GaAs Interface Chemical and Electronic Properties: Orientation Dependence,” J. Vac. Sci. Technol. B 8, 1008 (1990).
74. S. Chang, L.J. Brillson, Y.J. Kime, D.S. Rioux, D. Pettit, and J.M. Woodall, “Orientation – Dependent Chemistry and Schottky Barrier Formation at Metal – GaAs Interfaces,” Phys. Rev. Lett. 64, 2551 (1990).
73. J. L. Shaw, L.J. Brillson, S. Sivananthan, and J.P. Faurie, “Deep Level Luminescence Measurements of MBE CdTe Growth Quality and Processing,” Proceeding of the Materials Research Society (Materials Research Society, Pittsburgh, PA,1990), Volume 161.
72. J. L. Freeouf, J.M. Woodall, R.E. Viturro, and L.J. Brillson, “The Metal / (100) GaAs Interface: The Case for a Metal-Insulator-Semiconductor-like Structure,” Appl. Phys. Lett. 56, 69 (1990).
71. J. L. Shaw, L.J. Brillson, S. Sivananthan and J.P. Faurie, “Deep Level Photoluminescence Spectroscopy of CdTe Epitaxial Layer Surfaces,” Appl. Phys. Lett. 56, 1266 (1990).
70. S. Chang, R. E. Viturro, and L.J. Brillson, “Temperature-Dependent Formation of Interface States and Schottky Barriers at Metal-MBE-GaAs (100) Junctions,” J. Vac. Sci. Technol. A 8, 3803 (1990).

1989

69. R.E. Viturro, S. Chang, J. L. Shaw, C. Mailhiot, L.J. Brillson, R. Zanoni, Y. Hwu, G. Margaritondo, P. D. Kirchner, and J.M. Woodall, “Soft X-Ray Photoemission and Cathodoluminescence Spectroscopies of Metals on MBE-GaAs(100) Surfaces: Approaching the Ideal Chemical and Electronic Limits,” J. Vac. Sci. Technol. B 7, 1007 (1989).

1988

68. F. Cerrina, G. Margaritondo, J. H. Underwood, M. Hettrick, M. Green, A. Franciosi, H. Hoechst, P.M. Deluca, Jr., L.J. Brillson, and M.N. Gould, “MAXIMUM: A Scanning Photoelectron Microscope at Aladdin,” J. Nuclear Instrum. & Methods, A 266, 303 (1988).

1987

67. P. Chiaradia, L.J. Brillson, M. Fanfoni, P. DePadova, P. Nataletti, R.E. Viturro, M.L. Slade, G. Margaritondo, M.K. Kelly, D. Kilday, and N. Tache, “Unpinned Schottky Barrier in GaP (110),” Institute of Physics Conference Series 91, 513 (1987).

1986

66. J. Bregman, Y. Shapira, Z. Calahorra and L.J. Brillson, “Oxygen Diffusion And Reaction At Annealed InSb MOS Interfaces,” Surf. Sci. 178, 188 (1986).
65. R. E. Viturro, M. L. Slade and L.J. Brillson, “Optical Emission Properties of Metal/III-V Compound Semiconductor Interface States,” Phys. Rev. Lett. 57, 487 (1986).
64. L.J. Brillson, M.L. Slade, R.E. Viturro, M.Kelly, N. Tache, G. Margaritondo, J.M. Woodall, G.D. Pettit, P.D. Kirchner, and S.L. Wright, “Absence of Fermi Level Pinning at Metal – In_xGa_1-xAs (100) Interfaces,” Appl. Phys. Lett. 48, 1458 (1986).
63. L.J.Brillson, M.L. Slade, R.E. Viturro, M. Kelly, N. Tache, G. Margaritondo, J. Woodall, G.D. Pettit, P.D. Kirchner and S.L. Wright, “Fermi Level Pinning and Chemical Interactions at Metal – In_xGa_1-xAs (100) Interfaces,” J. Vac. Sci. Technol. B 4, 919 (1986).
62. J. Slowik, L.J. Brillson and H. Richter, “Acceptor-like Electron Traps Control Effective Barrier for UHV-Cleaved and Laser Annealed Al / InP,” J. Vac. Sci. Technol. B 4, 974 (1986).
61. L.J. Brillson, “Proceedings of the Topical Conference on Frontiers in Electronic Materials and Processing,” edited by L.J. Brillson (American Institute of Physics, New York, 1986) 338 pages.
60. L.J. Brillson, M.L. Slade, H.W. Richter, H. Vander Plas, and R.T. Fulks, “Titanium-Silicon and Silicon Dioxide Reactions Controlled by Low Temperature Rapid Thermal Annealing,” J. Vac. Sci. Technol. A 4, 993 (1986).

1985

59. L.J.Brillson, M.L. Slade, H.W. Richter, H. Vander Plas, and R.T. Fulks, “Control of Titanium-Silicon and Silicon Dioxide Reactions by Low Temperature Rapid Thermal Annealing,” Appl. Phys. Lett. 47, 1080 (1985).
58. J.H. Slowik, L.J. Brillson, and H.W. Richter, “Acceptor-Like Electron Traps and Thermally-Reversible Barrier Heights for Al on UHV-Cleaved (110) InP,” J. Appl. Phys. 58, 3154 (1985).

1984

57. H. Richter, L.J. Brillson, R. Daniels, M. Kelly, and G. Margaritondo, “Control and Characterization of Metal-InP and GaAs Interfaces Formed by Laser-Enhanced Reactions,” J. Vac. Sci. Technol. B 2, 591 (1984).
56. Y. Shapira, L.J. Brillson, A.D. Katnani and G. Margaritondo, “Interdiffusion and Chemical Trapping at InP (110) Interfaces with Au, Al, Ni, Cu and Ti,” Phys. Rev. B 30, 4586 (1984).
55. L.J. Brillson, A.D. Katnani, M. Kelly, and G. Margaritondo, “Photoemission Studies of Atomic Redistribution at Gold-Silicon and Aluminum-Silicon Interfaces,” J. Vac. Sci. Technol. A 2, 551 (1984).
54. L.J. Brillson, M. Slade, A. Katnani, M. Kelly, and G. Margaritondo, “Reduction of Silicon-Aluminum Interdiffusion by Improved Semiconductor Ordering,” Appl. Phys. Lett. 44, 110 (1984).
53. Y. Shapira, L.J. Brillson, and A. Heller, “Origin of Surface and Metal-Induced Interface States on InP,” Phys. Rev. B 29, 6824 (1984).
52. Y. Shapira, L.J. Brillson, and A.Heller, “Studies of Surface Recombination Velocity Reduction of InP Photoelectrochemical Solar Cells,” Proceedings of the Fifth EC Photovoltaic Solar Energy Conference (Athens,Greece), 5, 72 (1984).

1983

51. Y. Shapira and L.J. Brillson, “Auger Depth Profiling Studies of Interdiffusion and Chemical Trapping at Metal-InP Interfaces,” J. Vac. Sci. Technol. B 1, 618 (1983).
50. Y. Shapira, L.J. Brillson, and A. Heller, “InP Surface States and Reduced Surface Recombination Velocity,” Appl. Phys. Lett. 43, 174 (1983).
49. Y. Shapira, L.J. Brillson, and A. Heller, “Investigation of InP Surface and Metal Interfaces by Surface Photovoltage and Auger Electron Spectroscopies,” J. Vac. Sci. Technol. A 1, 766 (1983).
48. L.J. Brillson, C.F. Brucker, N.G. Stoffel, A.D. Katnani, R. Daniels, and G. Margaritondo, “Photoemission Studies of Reactive Diffusion and Localized Doping at II-VI Compound Semiconductor Interfaces,” Proceedings of the 16th International Conference on the Physics of Semiconductor, Physica 117B&C, 848 (1983).

1982

47. C.F. Brucker, L.J. Brillson, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, Schottky “Barrier Modulation at Metal Contacts to CdS and CdSe,” J. Vac. Sci. Technol. 21, 590 (1982).
46. C.F. Brucker and L.J. Brillson, “Role of Cation Dissocation in Schottky Barrier Formation at II-VI Compound Semiconductor Interfaces,” Thin Solid Films 89, 67 (1982).
45. L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, R. Daniels and G. Margaritondo, “Fermi Level Pinning and Chemical Structure of InP-Metal Interfaces,” J. Vac. Sci. Technol. 21, 564 (1982).
44. L.J. Brillson, “Surface Photovoltage Measurements and Fermi Level Pinning,” Thin Solid Films 89, L27 (1982).
43. N.G. Stoffel, R.R. Daniels, G. Margaritondo, C.F. Brucker, and L.J. Brillson, “CdS-Cu Interface Formation: A Microscopic Study of the Interdiffusion and Chemical Processes,” J. Vac. Sci. Technol. 20, 701 (1982).
42. D.K. Murti, L.J. Brillson, and J.H. Slowik, “Photovoltage Studies of Aluminum-Phthalocyanine Interfaces,” J. Vac. Sci. Technol. 20, 233 (1982).
41. J.H. Slowik, L.J. Brillson, and C.F. Brucker, “Time-Resolved Charge Injection: Effect of Interfacial Ambients upon Contact Performance,” J. Appl. Phys. 53, 550 (1982).

1981

40. C.F. Brucker and L.J. Brillson, “New Method for Control of Schottky Barrier Height,” Appl. Phys. Lett. 39, 67 (1981).
39. L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, “Atomic and Electrical Structure of InP-Metal Interfaces: A Prototypical III-V Compound Semiconductor,” J. Vac. Sci. Technol. 19, 661 (1981).
38. L.J. Brillson and C.F. Brucker, “Reactive Interdiffusion and Electronic Barriers at Metal-CdS and Metal-CdSe Interfaces,” J. Vac. Sci. Technol. 19, 617 (1981).
37. L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, “Chemical Basis for InP-Metal Schottky Barrier Formation,” Appl. Phys. Lett. 38, 784 (1981).
36. L.J. Brillson, A. Kahn, J. Carelli, D. Katnani, C.B. Duke, and A. Paton, “Atomic Geometry of Al-GaAs Interfaces: GaAs (110)-p (1×1)-Al(θ), 0≤θ≤8.5 Monolayers,” J. Vac. Sci. Technol. 19, 331 (1981).
35. A. Kahn,L.J. Brillson, G. Margaritondo, and A.D. Katnani, “Soft X-ray Photoemission Study of Annealed Al Layers on GaAs(110),” Solid State Commun. 38, 1269 (1981).
34. A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, C.B. Duke, R.J. Meyer, A. Paton, and L.J. Brillson, “LEED Intensity Analysis of the Structure of Al on GaAs (110),” J. Vac. Sci. Technol. 18, 792 (1981).
33. L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, “Abruptness of Semiconductor-Metal Interfaces,” Phys. Rev. Lett. 46, 838 (1981).
32. C.B. Duke, A. Paton, R.J. Meyer, L.J. Brillson, A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, G. Margaritondo, and A.D. Katnani, “Atomic Geometry of GaAs (110)-p(1×1)-Al,” Phys. Rev. Lett. 46, 440 (1981).
31. L.J. Brillson, F. Luo and J. Wysocki, “Field Effect Spectroscopy of CdSe-Insulator Interface States,” J. Appl. Phys. 52, 5250 (1981).
30. L.J. Brillson and C.F. Brucker, “Reactive Interdiffusion at Metal-CdS and Metal-CdSe Interfaces,” J. Vac. Sci. Technol. 18, 787 (1981).

1980

29. L.J. Brillson, R.S. Bauer, and R.Z. Bachrach, “Au and Al Interface Reactions with Si0₂,” Appl. Phys. Lett., 37, 1006 (1980).
28. L.J. Brillson, C.F. Brucker, G. Margaritondo, J. Slowik, and N.G. Stoffel, “Photoemission Studies of Atomic Redistribution at Compound Semiconductor Interfaces,” Proc. XV International Conference on the Physics of Semiconductors (Kyoto, 1980), J. Phys. Soc. Japan 49, 1089 (1980).
27. L.J. Brillson, R.S. Bauer and R.Z. Bachrach, “Chemical Bonding at Metal/Si0₂/Si (111) Interfaces,” Proc. Conf. on the Physics of MOS Insulators, edited by S. T. Pantelides (Pergamon, New York, 1980), p. 221.
26. L.J. Brillson, J. Wysocki and F. Luo, “Field Effect Spectroscopy of Semiconductor-Insulator Interface States Using Thin Film Transistor Structures,” Proc. Conf. on the Physics of MOS Insulators ed. S.T. Pantelides (Pergamon, New York, 1980), p. 265.

1979

25. L.J. Brillson, “Chemical Mechanisms of Schottky Barrier Formation,” J. Vac. Sci. Technol. 16, 1137 (1979).
24. L.J. Brillson, R.Z. Bachrach and R.S. Bauer, “Chemically-Induced Charge Redistribution at Al-GaAs Interfaces,” Phys. Rev. Lett. 42, 397 (1979).

1978

23. L.J. Brillson, “Metal-Induced Chemical Reactions and Surface States at GaAs and ZnS Interfaces,” Proceedings of the Fourteenth International Conference on the Physics of Semiconductors, ed. R.A. Stradling (Plessey, Edinburgh, 1978), p. 765.
22. L.J. Brillson, J.J. Ritsko, R.W. Bigelow and T.J. Fabish, “Electron Energy Loss Spectroscopy and the Optical Properties of Polymethylmethacrylate from 1 to 300 eV,” J. Chem. Phys. 69, 3931 (1978).
21. L.J. Brillson, “Chemical Reaction and Charge Redistribution at Metal-Semiconductor Interfaces,” J. Vac. Sci. Technol. 15, 1378 (1978).
20. L.J. Brillson, “Transition in Schottky Barrier Formation with Chemical Reactivity,” Phys. Rev. Lett. 40, 260 (1978).
19. L.J. Brillson, “Chemical Reactions and Local Charge Redistribution at Metal-CdS and CdSe Interfaces,” Phys. Rev. 18, 2431 (1978).
18. L.J. Brillson and C.H. Griffiths, “Surface Photovoltage Spectroscopy of Defects and Impurities in Trigonal Selenium,” J. Vac. Sci. Technol. 15, 529 (1978).

1977

17. L.J. Brillson, J.J. Ritsko and D.J. Sandman, “Electron Energy Loss Spectroscopy of Tetracyanoquinodimethane, TCNQ, Tetrathiofulvalene, TTF, and the Salt TTF-TCNQ,” Solid State Commun. 24, 109 (1977).

1976

16. L.J. Brillson, “Metal-Induced Surface States on CdS and CdSe,” Proceedings of the Thirteenth International Conference on the Physics of Semiconductors, ed. F.G. Fumi (Typografica Marves, Rome, 1976) p. 665.
15. L.J. Brillson and G.P. Ceasar, “Direct Comparison of Auger Electron Spectroscopy and ESCA Sensitivities,” J. Appl. Phys. 47, 4195 (1976).
14. L.J. Brillson and G.P. Ceasar, “X-ray Photoionization Cross Sections for Quantitative Analysis,” Surf. Sci. 58, 457 (1976).

1975

13. L.J. Brillson, “Surface Photovoltage and Electron Energy-Loss Spectroscopy of Oxygen Adsorbed on (1120) CdSe,” J. Vac. Sci. Technol. 13, 325 (1976).
12. L.J. Brillson, “Observation of Extrinsic Surface States on (1120) CdS Surfaces,” Surf. Sci. 51, 45 (1975).
11. L.J. Brillson, “Surface Photovoltage and Auger Spectroscopy Studies of (1120) CdS Surfaces,” J. Vac. Sci. Technol. 12, 76 (1975).

1974

10. L.J. Brillson and E.M. Conwell, “Optical Guided Waves in CdS_xSe_1-x Diffused Layers,” J. Appl. Phys. 45, 2589 (1974).
9. L.J. Brillson, M.L. Shand and E. Burstein, “Raman Investigation of Ferroelectricity in IV-VI Semiconductors,” Ferroelectrics 7, 283 (1974).
8. L.J. Brillson, E. Burstein and L. Muldawer, “Raman Observation of the Ferroelectric Phase Transition in SnTe,” Phys. Rev. B 9, 1547 (1974).

1972

7. L.J. Brillson and E. Burstein, “Raman Scattering by LO Phonons in Crossed Electric and Magnetic Fields,” (Proceedings of the Eleventh International Conference on the Physics of Semiconductors, Warsaw, 1972), p. 1174.
6. L.J. Brillson and E. Burstein, “Electrical Field-Induced Raman Scattering by LO Phonons in an External Magnetic Field,” Phys. Rev. B 5, 2973 (1972).

1971

5. A. Pinczuk, L.J. Brillson, E. Burstein and E. Anastassakis, “Resonant Light Scattering by Single-Particle Excitations in n-GaAs,” Phys. Rev. Lett. 27, 317 (1971).
4. L.J. Brillson, A. Pinczuk, E. Burstein and E. Anastassakis, “Resonant Raman Scattering by Electron Gas and Lattice Excitations at the E₀+Δ₀ Gap on n-GaAs,” (Proceedings of the 2nd International Conference on Light Scattering in Solids, Paris, 1971), p. 115.
3. L.J. Brillson and E. Burstein, “Surface Electric-Field Induced Raman Scattering in PbTe and SnTe,” Phys. Rev. Lett. 27, 808 (1971).
2. L.J. Brillson and E. Burstein, “Surface Electric Field-Induced Raman Scattering in the Cubic IV-VI Compound Semiconductors,” (Proceedings of the 2nd International Conference on Light Scattering in Solids, Paris, 1971), p. 320.
1. L.J. Brillson, E. Burstein, A.A. Maradudin and T. Starke, “Frequencies of the Long Wavelength Optical Vibration Modes of Graphite,” (Proceedings of the Conference on Semimetals and Narrow Gap Semiconductors), J. Phys. Chem. Solids, p. 187 (1971).