Publications – 1990


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1990

  • 78. S. Chang, L.J. Brillson, Y. J. Kime, D.S. Rioux, P.D. Kirchner, D. Pettit, and J.M. Woodall, “Orientation – Dependent Chemistry and Schottky Barrier Formation at Metal – GaAs Interfaces,” Proceedings of the Twentieth International Conference on the Physics of Semiconductors, Thessaloniki, Greece, edited by J. Joannopoulos (World Scientific, Singapore, 1990), p. 351.
  • 77. S. Chang, I. Vitomirov, L.J. Brillson, D.F. Rioux, P.D. Kirchner, G.D. Pettit, and J.M.Woodall, “Confirmation of Temperature – Dependent Photovoltaic Effect on Fermi Level Measurements by Photoemission Spectroscopy,” Phys. Rev. B, Rapid Commun. 41, 12299 (1990).
  • 76. L.J. Brillson and Fred H. Pollak, “Surface and Interface Analysis of Microelectronic Materials Processing and Growth,” ed. (SPIE, Bellingham, WA, 1990), SPIE Proceedings 1186.
  • 75. S. Chang, L.J. Brillson, Y.J. Kime, D S. Rioux, P. D. Kirchner, D. Pettit, and J.M. Woodall, “Metal / GaAs Interface Chemical and Electronic Properties: Orientation Dependence,” J. Vac. Sci. Technol. B 8, 1008 (1990).
  • 74. S. Chang, L.J. Brillson, Y.J. Kime, D.S. Rioux, D. Pettit, and J.M. Woodall, “Orientation – Dependent Chemistry and Schottky Barrier Formation at Metal – GaAs Interfaces,” Phys. Rev. Lett. 64, 2551 (1990).
  • 73. J. L. Shaw, L.J. Brillson, S. Sivananthan, and J.P. Faurie, “Deep Level Luminescence Measurements of MBE CdTe Growth Quality and Processing,” Proceeding of the Materials Research Society (Materials Research Society, Pittsburgh, PA,1990), Volume 161.
  • 72. J. L. Freeouf, J.M. Woodall, R.E. Viturro, and L.J. Brillson, “The Metal / (100) GaAs Interface: The Case for a Metal-Insulator-Semiconductor-like Structure,” Appl. Phys. Lett. 56, 69 (1990).
  • 71. J. L. Shaw, L.J. Brillson, S. Sivananthan and J.P. Faurie, “Deep Level Photoluminescence Spectroscopy of CdTe Epitaxial Layer Surfaces,” Appl. Phys. Lett. 56, 1266 (1990).
  • 70. S. Chang, R. E. Viturro, and L.J. Brillson, “Temperature-Dependent Formation of Interface States and Schottky Barriers at Metal-MBE-GaAs (100) Junctions,” J. Vac. Sci. Technol. A 8, 3803 (1990).