Wide Bandgap Power Electronics

Wide Bandgap Power Electronics

Physical Mechanisms Inside High Electron Mobility Transistors

A combination of mechanical strain, temperature, and defect formation inside AlGaN/GaN HEMTs determines state-of-the-art performance and lifetime

3-Dimensional Probe on a Nanometer Scale

Electric -> Mechanical Stress -> Native Defects -> Electric Potential Changes

Related Publications

  • Chung-Han Lin, Tyler A. Merz, D. R. Doutt, Jungwoo Joh, Jesus A. Del Alamo, U.K. Mishra, and Leonard J. Brillson, “Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale,” IEEE Trans. Electron. Dev. 59, 2667 (2012). doi: 10.1109/TED.2012.2206595
  • C-H. Lin, D.R. Doutt, U.K. Mishra, T.A. Merz, and L.J. Brillson, “Field-Induced Strain Degradation of AlGaN/GaN HEMTs on a Nanometer Scale,” Appl. Phys. Lett., 97, 223502 (2010).