Publications – 2011


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2011

  • 152. D.C. Look, K.D. Leedy, L. Vines, B.G. Svensson, A. Zubiaga, F. Tuomisto, D.R. Doutt, and L.J. Brillson, “Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO,” Phys. Rev. B 84, 115202 (2011).
  • 151. X. Wen, S. Gupta, T.R. Nicholson III, L. Brillson, S.C. Lee, and W. Lu, “AlGaN/GaN HFET biosensors working at sub-threshold regime for sensitivity enhancement,” Physica Status Solidi C 8, 2489-2491 (2011). doi: 10.1002pssc.201001174
  • 150. S. Shen, Y. Liu, R.G. Gordon, and L.J. Brillson, “Impact of Ultrathin Al2O3 Diffusion Barriers on Defects in High-κ LaLuO3 on Si,” Appl. Phys. Lett. 98, 172902 (2011).
  • 149. S. Gupta, H.-H. Wu,, K. J. Kwak, P. Casal, T. R. Nicholson III, X. Wen, A. Ramesh, B. Bhushan, P.R. Berger, W. Lu, L.J. Brillson, Stephen Craig Lee, “Interfacial design and structure of protein/polymer films on oxidized AlGaN,” J. Phys. D, Applied Physics, 44, 034010 (2011) (Invited). doi: 10.1088/0022-3727/44/3/034010
  • 148. Yiqun Liu, Shaoping Shen, L.J. Brillson, and R.G. Gordon, “Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices,” Appl. Phys. Lett. 98, 122907 (2011).
  • 147. T.A. Merz, D.R. Doutt, T. Bolton, Y. Dong, and L.J. Brillson, “Native Defect Formation with ZnO Nanostructure Growth,” Surf. Sci. Lett. 605, L20-L23 (2011). doi:10.1016/j.susc.2010.12.021
  • 146. E.J. Katz, Z. Zhang, H.L. Hughes, K.-B. Chung, G. Lucovsky, and L.J. Brillson, “Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics,” J. Vac. Sci. Technol. B 29 (1), 011027 (2011).