147. T. R. Nicholson III, S. Gupta, X. Wen, H.-H. Wu, A. Ramish, P. Casal, K.J. Kwak, B. Bhushan, P.R. Berger, W. Lu, L.J. Brillson, S.C. Lee, “Rational enhancement of nanobio-technological device function illustrated by partial optimization of a protein sensing field effect transistor,”Proc. IMechE, Part N: J. Nanoengineering and Nanosystems 223, 149 (2010) (Invited). Most highly downloaded paper published in JNN in 2010.
146. M.J. Tadjer, T.I. Feygelson, K.D. Hobart, J.D. Caldwell, T.J. Anderson, J.E. Butler, C.R. Eddy, Jr., D.K. Gaskill, K.K. Lew, B.L. VanMil, R.L. Myers-Ward, F.J. Kub, G. Sollenberger, and L. Brillson, “On the high curvature coefficient rectifying behavior of nanoscrystalline diamond heterojunctions to 4H-SiC,”Appl. Phys. Lett. 97, 193510 (2010).
145. C-H. Lin, D.R. Doutt, U.K. Mishra, T.A. Merz, and L.J. Brillson, “Field-Induced Strain Degradation of AlGaN/GaN HEMTs on a Nanometer Scale,”Appl. Phys. Lett., 97, 223502 (2010).
144. Y. Dong, Z.-Q. Fang, D.C. Look, D.R. Doutt, G. Cantwell, J. Zhang, and J.J. Song and L.J. Brillson, “Defects at Oxygen Plasma Cleaned ZnO Polar Surfaces,”J. Appl. Phys. 108, 103718 (2010). doi:10.1063/1.3514102
143. M. Rutkowski, A.J. Hauser, F.Y. Yang, R. Ricciardo, T. Meyer, P.M. Woodward, A. Holcombe, P. Morris, and L.J. Brillson, “X-Ray Photoemission Spectroscopy of Sr2FeMoO6 Film Stoichiometry and Valence State,”J. Vac. Sci. Technol. A 28, 1240 (2010).
142. Y. Dong, F. Tuomisto, B.G. Svensson, A. Yu. Kuznetsov, and L.J. Brillson, “Vacancy Defect and Defect Cluster Energetics In Ion-implanted ZnO,”Phys. Rev. B, Rapid Communications 81, 081201(R) (2010). doi: 10.1103/PhysRevB.81.081201
