Publications – 2004


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2004

  • 117. A.P. Karmarkar, B. Jun, D.M. Fleetwood, R.D. Schrimpf, R.A. Weller, B.D. White, L.J. Brillson, and U.K. Mishra, “Proton Irradiation Effects on GaN-Based High Electron-Mobility Transistors with Si-Doped AlxGa1-xN and Thick GaN Cap Layers,” IEEE Trans. Nuclear Sci., Proc. 41st Annual Int’l. Nucl. Space Radiation Effects Conf. 51 (6) 3801-3806 (2004).
  • 116. X. Weng, R.S. Goldman, V. Rotberg, N. Bataiev, and L.J. Brillson, “Origins of Luminescence from Nitrogen-Ion-Implanted-Epitaxial GaAs,” Appl. Phys. Lett. 85, 2774-2776 (2004).
  • 115. S.T. Bradley, L.J. Brillson, J. Hwang, and W.J. Schaff, “Surface Cleaning and Annealing Effects on Ni/AlGaN Interface Atomic Composition and Schottky Barrier Height,” Appl. Phys. Lett. 85, 1368-1370 (2004).
  • 114. X.L. Sun, S.T. Bradley, G.H. Jessen, D.C. Look, R.J. Molnar, and L.J. Brillson, “Micro-Auger Electron Spectroscopy Studies of Chemical and Electronic Effects at GaN-Sapphire Interfaces,” J. Vac. Sci. Technol. A 22, 2284-2289 (2004).
  • 113. Y.M. Strzhemechny, H.L. Mosbacker, D.C. Look, D.C. Reynolds, C.W. Litton, N.Y. Garces, N.C. Giles, L.E. Halliburton, S. Niki, and L.J. Brillson, “Remote Hydrogen Plasma Doping of Single Crystal ZnO,” Appl. Phys. Lett. 84, 2545-2547 (2004).