Publications – 1999


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1999

  • 101. T.M. Levin, G.H. Jessen, F.A. Ponce and L.J. Brillson, “Localized States at InGaN/GaN Quantum Well Interfaces,” Appl. Phys. Lett. 75, 3835-3837 (1999).
  • 100. T.M. Levin, G.H. Jessen, F.A. Ponce and L.J. Brillson, “Depth-Resolved Electron-Excited Nanoscale Luminescence Spectroscopy Studies of Defects Near GaN/InGaN/GaN Quantum Wells,” J. Vac. Sci. Technol. B 17, 2545-2552 (1999).
  • 99. A. Hierro, D. Kwon, S. H. Goss, L.J. Brillson, and S. A. Ringel, “Evidence for a Dominant Mid-Gap Trap in n-ZnSe Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 75, 832 (1999).
  • 98. T.M. Levin, A.P. Young, J. Schäfer, L.J. Brillson, J.D. MacKenzie, and C.R. Abernathy, “Low Energy Cathodoluminescence Spectroscopy of Erbium-Doped Gallium Nitride Surfaces,” J. Vac. Sci. Technol. A 17, 3437-3442 (1999).
  • 97. A.Hierro, D. Kwon, S.A.Ringel, L.J. Brillson, J.Schaefer. A.P.Young, A. Franciosi, “Deep Level Characterization of Interface – Engineered ZnSe Layers on GaAs Grown by Molecular Beam Epitaxy,” Proc. Materials Research Society (MRS Press, Warrendale, PA, 1999) 535, pp.99-104.