89. I.M. Vitomirov, A.D. Raisanen, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Impact of Processing on Al/GaAs(100) Interface States,”Solid State Commun. 84, 61 (1992).
88. I.M. Vitomirov, A.D. Raisanen, A.C.Finnefrock, R.E. Viturro, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Geometric Ordering, Surface Chemistry, Band Bending, and Work function at Decapped GaAs(100) Surfaces,”Phys. Rev. B 46, 13293 (1992).
87. I.M. Vitomirov, A. Raisanen, A. C. Finnefrock, R.E. Viturro, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Temperature-Dependent Chemical and Electronic Structure of Reconstructed GaAs(100) Surfaces,”J. Vac. Sci. Technol. B 10, 1898 (1992).
86. S. Chang, J.L. Shaw, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Inhomogeneous and Wide Range of Schottky Barrier Formation at Metal / GaAs(100) Interfaces Observed with Electrical Measurements,”J. Vac. Sci. Technol. B 10, 1932 (1992).
85. I.M. Vitomirov, A.D. Raisanen, R.E. Viturro, S. Chang, L.J. Brillson, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, “Surface and Interface States for GaAs(100) (1×1) and (4×2)-c(8×2) Reconstructions,”J. Vac. Sci. Technol. A 10, 749 (1992).
84. G. Hodes, E. Watkins, D. Mantell, M. Peisach, A. Wold, and L.J. Brillson, “WSe2 – Based Schottky Junctions: The Effect of Polyiodide Treatment on Junction Behavior,”J. Appl. Phys. 71, 5077 (1992).
83. S. Chang, I. M. Vitomirov, C. Mailhiot, L.J. Brillson, D.S. Rioux, Y.J. Kime, P.D. Kirchner, D. Pettit, and J.M. Woodall, “Electronic and Chemical Structure of Al and Au Interfaces with Vicinal GaAs (100) Surfaces,”Phys. Rev. B 45, 13438 (1992).