40. C.F. Brucker and L.J. Brillson, “New Method for Control of Schottky Barrier Height,”Appl. Phys. Lett. 39, 67 (1981).
39. L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, “Atomic and Electrical Structure of InP-Metal Interfaces: A Prototypical III-V Compound Semiconductor,”J. Vac. Sci. Technol. 19, 661 (1981).
38. L.J. Brillson and C.F. Brucker, “Reactive Interdiffusion and Electronic Barriers at Metal-CdS and Metal-CdSe Interfaces,”J. Vac. Sci. Technol. 19, 617 (1981).
37. L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, “Chemical Basis for InP-Metal Schottky Barrier Formation,”Appl. Phys. Lett. 38, 784 (1981).
36. L.J. Brillson, A. Kahn, J. Carelli, D. Katnani, C.B. Duke, and A. Paton, “Atomic Geometry of Al-GaAs Interfaces: GaAs (110)-p (1×1)-Al(θ), 0≤θ≤8.5 Monolayers,”J. Vac. Sci. Technol. 19, 331 (1981).
35. A. Kahn,L.J. Brillson, G. Margaritondo, and A.D. Katnani, “Soft X-ray Photoemission Study of Annealed Al Layers on GaAs(110),”Solid State Commun. 38, 1269 (1981).
34. A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, C.B. Duke, R.J. Meyer, A. Paton, and L.J. Brillson, “LEED Intensity Analysis of the Structure of Al on GaAs (110),”J. Vac. Sci. Technol. 18, 792 (1981).
33. L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, “Abruptness of Semiconductor-Metal Interfaces,”Phys. Rev. Lett. 46, 838 (1981).
32. C.B. Duke, A. Paton, R.J. Meyer, L.J. Brillson, A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, G. Margaritondo, and A.D. Katnani, “Atomic Geometry of GaAs (110)-p(1×1)-Al,”Phys. Rev. Lett. 46, 440 (1981).
31. L.J. Brillson, F. Luo and J. Wysocki, “Field Effect Spectroscopy of CdSe-Insulator Interface States,”J. Appl. Phys. 52, 5250 (1981).
30. L.J. Brillson and C.F. Brucker, “Reactive Interdiffusion at Metal-CdS and Metal-CdSe Interfaces,”J. Vac. Sci. Technol. 18, 787 (1981).
