Principal Investigator

 
Email: agarwal.334@osu.edu

Telephone:

Fax:

 
Ph.D. Electrical Engineering, Lehigh University, June 1984.

M.S. Electrical Engineering, University of Tennessee Space Institute, March 1980.

B.S. Electrical Engineering, M. N. R. Engineering College, University of Allahabad, India, June 1978.

 

 
Professor August 2017 – Present
Electrical and Computer Engineering, The Ohio State University, Columbus, OH

Technical Advisor for the Wide Bandgap (WBG) Initiative March 2013 – November 2016
Advanced Manufacturing Office, U.S. Department of Energy, Washington DC.

Adjunct Professor  March 2008 — March 2013
ECE Department, North Carolina State University

 
Dr. Anant Agarwal, Ph.D., joined The Ohio State University at Columbus, Ohio in August 2017. Previously, he was with the US Department of Energy (DOE) during March 2013 – November 2016. While at DOE, Dr. Agarwal helped create and manage four programs related to wide band-gap technology and their applications including Power America, Next Generation of Electric Machines (I and II) and Graduate Traineeships. From 1999 to 2013, Dr. Agarwal was Director of Research and Development for Wide Band Gap (WBG) devices at Cree, Inc. In this role, he oversaw the development and commercialization of Silicon Carbide diode and MOSFET power devices. Today, these WBG semiconductors are being employed globally to improve efficiency and reduce power consumption in systems such as power supplies, solar inverters, and motor drives.He has also developed a 30 lecture video course on SiC power devices which anyone can freely listen to at https://cusp.umn.edu/power-electronics/wide-band-gap-wbg-devices.

As a leading research scientist in this area, Dr. Agarwal’s life goal has been to successfully commercialize WBG power devices to resurrect the domestic power electronics industry while educating the next generation of researchers. This will ultimately enable the creation of high-quality manufacturing jobs in the US while perpetuating a high-tech US workforce.

Member of IEEE Electron Device Society (1980) and IEEE Fellow in Electron Device Society

Technical Program Co-chair of the International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, Ohio.

Technical Program Committee Member of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Technical Program Committee Member of the International Conference  on Silicon Carbide and Related Materials

Technical Program Committee Member of the Device Research Conference

Symposium Organizer, Silicon Carbide – Materials, Processing, and Devices, MRS, Boston

Guest Editor, Special Issue on SiC – IEEE Electron Device Transactions

George Westinghouse Signature Award for work on UHF SiC Static Induction Transistor

Chaired Technical Session IV B on Wide Bandgap and Power Devices, 53^rd Annual Device Research Conference, University of Virginia, Charlottesville, Virginia

Corporate George Westinghouse Innovation Award for a disclosure  on SiC Static Induction Transistor

Co-Chaired Technical Session on SiC Devices, at WOCSEMAD, New Orleans

Westinghouse EISD Outstanding Performance Recognition for formulation of a viable approach to SiC NVRAM

Sherman Fairchild Fellowship, Lehigh University

2012 – Present

 
2011

 
2005 – 2006

 
2004 – 2005

 
2000 – 2001

 
2000

 
1999

1996

 
1995

 
 
1995

 
1995

 
1992

 
1981 – 1984

He jointly holds more than 60 patents, has co-authored more than 300 research papers, co-edited a book on Silicon Carbide Technology, co-authored five book chapters and was elected an IEEE Fellow in January 2012 for his life time contributions to Wide Band Gap technologies.

PATENTS

BOOKS & BOOK CHAPTERS

JOURNALS, CONFERENCES & SYMPOSIUMS