Jiashu Qian
qian.539@osu.edu
Jiashu Qian received his M.S. degree in the Electrical and Computer Engineering Department at The Ohio State University in May 2020 and his B.S. degree in the Microelectronics Science and Engineering at Nanjing University of Science and Technology in June 2018. He has been an OSU ECE WBG member since February 2020 pursuing his research interests of reliability of power devices and wide-bandgap semiconductor power devices design. He is currently working on methodologies for identification of SiC MOSFET failure modes through accelerated tests from FORD motor company and SPICE modeling for 10kV SiC power devices.
Limeng Shi
shi.1564@osu.edu
Limeng Shi received her B.S. degree in Electronic Science and Technology from Hunan University in 2017. She received her M.S. degree in Microelectronics and Solid State Electronics from Peking University in 2020. During her graduate study, Limeng’s research work in the key laboratory of Shenzhen Advanced Electronic Devices and Integrated Application mainly focused on improving the stability and reliability of the GaN HEMTs. She is currently a second-year Ph.D. student in the ECE Department at the Ohio State University, Columbus, Ohio. She is actively involved in SiC commercial MOSFETs reliability research and optimization of SiC lateral MOSFETs. She is responsible for testing and evaluating the reliability of commercial SiC power MOSFETs in the Ford project.
Shengnan Zhu
zhu.2670@osu.edu
Shengnan Zhu received her B.S. and M.S. degrees in Optical and Electronic Information Engineering from The Huazhong University of Science and Technology (Wuhan, China) in June 2014, and June 2017, respectively. She has been a member of the OSU ECE WBG group since September 2019. Her research interests include SiC power MOSFETs reliability, and SiC power devices design, fabrication, and characterization. She is currently working on the Reliable SiC power MOSFET design methodology for the II-VI project and the Methodologies for identification of SiC MOSFET failure modes through accelerated tests for the FORD project, among others.
Tianshi Liu
liu.2876@osu.edu
Tianshi Liu received his M.S. and B.S. degree in the Electrical and Computer Engineering Department at The Ohio State University in May 2018 and December 2015 respectively. He has been an OSU ECE WBG member since 2018 pursuing his research interests in SPICE modeling, SiC CMOS, and oxide reliability of SiC MOS devices. He is currently working on the SMART SiC Power ICs project.
Susanna Yu
yu.2452@osu.edu
Susanna Yu received her M.S. and B.S. degree in the Electronic Materials Engineering at Kwangwoon University in June 2016 and June 2014 respectively. She has been an OSU ECE WBG member since 2018 pursuing her research interests of design, process, and analysis of wide-bandgap power semiconductors and the reliability of power devices. Her current projects include methodologies for identification of SiC MOSFET failure modes through accelerated tests from FORD motor company and reliable SiC power MOSFET design methodology from II-VI Foundation.
Diang Xing
xing.174@osu.edu
Diang Xing received his his M.S. degree in the Electrical and Computer Engineering Department at The Ohio State University in December 2017 and his B.S. degree in the Electrical Engineering Department at Clemson University in May 2016. He has been an OSU ECE HVPE and WBG member since 2018 pursuing his research interests of SiC MOSFET evaluation and power conversion. He currently works on the Sandia and PowerAmerica projects.
Chao-Yi Chien
chien.144@osu.edu
