Limeng Shi received her B.S. degree in Electronic Science and Technology from Hunan University in 2017. She received her M.S. degree in Microelectronics and Solid State Electronics from Peking University in 2020. During her graduate study, Limeng’s research work in the key laboratory of Shenzhen Advanced Electronic Devices and Integrated Application mainly focused on improving the stability and reliability of the GaN HEMTs. She is currently a second-year Ph.D. student in the ECE Department at the Ohio State University, Columbus, Ohio. She is actively involved in SiC commercial MOSFETs reliability research and optimization of SiC lateral MOSFETs. She is responsible for testing and evaluating the reliability of commercial SiC power MOSFETs in the Ford project.
Michael Jin received his B.S. degree in Electrical Engineering from The Ohio State University in May, 2021, and has been a member of the OSU ECE WBG group since then. His research interests include the simulation, design, fabrication, and testing of SiC power devices. He is currently working on the 3.3kV SiC MOSFET modelling project with Sandia National Labs, and the SiC neutron detector project. He is also involved with multiple tests and measurements on commercial and non-commercial SiC power MOSFETs.
Monikuntala Bhattacharya received her B.Tech. (B.S.) degree in Electrical Engineering from Maulana Abul Kalam Azad University of Technology, Kolkata, India, in July 2017. She received the M. Tech. (M.S.) degree in Nanoscience and Technology from Jadavpur University, Kolkata, India, in July 2019. She joined the OSU ECE WBG group in January 2022. Her research interests include the simulation, design, fabrication, and testing of SiC power devices. She is currently working on the 3.3kV SiC MOSFET modelling project and Interface Defect Analysis of SiC Power Devices, among others.