Publications


JOURNALS

[J4]Suvendu Nayak, Susanna Yu, Hema Lata Rao Maddi, Michael Jin, Limeng Shi, Swaroop Ganguly, and Anant K. Agarwal, “Non-isothermal simulation of SiC DMOSFET short circuit capability,” in Japanese Journal of Applied Physics 61.6 (2022): 061007, May 2022, doi: 10.35848/1347-4065/ac6409.

[J3]Susanna Yu, Marvin H. White, and Anant K. Agarwal, “Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs,” in IEEE Access, vol. 9, pp. 149118-149124, Nov. 2021, doi: 10.1109/ACCESS.2021.3124706.

[J2]Tianshi Liu, Shengnan Zhu, Marvin H. White, Arash Salemi, David Sheridan, and Anant K. Agarwal, “Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs,” in IEEE Journal of the Electron Devices Society, vol. 9, pp. 633-639, June 2021, doi: 10.1109/JEDS.2021.3091898.

[J1] Nick Yun, Dongyoung Kim, Justin Lynch, Adam J. Morgan, Woongje Sung, Minseok Kang, Anant K. Agarwal, Ronald Green, and Aivars Lelis, “Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance,” in IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 4346-4353, Oct. 2020, doi: 10.1109/TED.2020.3017150.

CONFERENCE & SYMPOSIUM

[C30]Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu, “Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs,” 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-7, doi: 10.1109/IRPS48203.2023.10118276.

[C29]Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, and Chingchi Chen, “Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs,” 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-5, doi: 10.1109/IRPS48203.2023.10117998.

[C28] Prashant Singh, Akshay K, Hema Lata Rao Maddi, Anant K. Agarwal, and Shreepad Karmalkar, “ Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time,” 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, South Korea, 2023, pp. 1-3, doi: 10.1109/EDTM55494.2023.10103006.

[C27]Jiashu Qian, Tianshi Liu, Jake Soto, Mowafak M. Al-Jassim, Robert Stahlbush, Nadeemullah Mahadik, Limeng Shi, Michael Jin, and Anant K. Agarwal, “A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs,” 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Redondo Beach, CA, USA, 2022, pp. 49-53, doi: 10.1109/WiPDA56483.2022.9955255.

[C26]Shengnan Zhu, Tianshi Liu, Arash Salemi, Michael Jin, Marvin H. White, David Sheridan, and Anant K. Agarwal, “A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies,” 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Redondo Beach, CA, USA, 2022, pp. 7-10, doi: 10.1109/WiPDA56483.2022.9955263.

[C25]Limeng Shi, Tianshi Liu, Shengnan Zhu, Jiashu Qian, Michael Jin, Hema Lata Rao Maddi, Marvin H. White, and Anant K. Agarwal, “Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs,” 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Redondo Beach, CA, USA, 2022, pp. 45-48, doi: 10.1109/WiPDA56483.2022.9955295.

[C24] Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar B. Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, and Ayman Fayed, “A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology,” 2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS), 2022, pp. 1-4, doi: 10.1109/MWSCAS54063.2022.9859305.

[C23] Nick Yun, Justin Lynch, Adam J. Morgan, Diang Xing, Michael Jin, Jiashu Qian, Minseok Kang, Voshadhi Amarasinghe, John Ransom, Victor Veliadis, Anant K. Agarwal, and Woongje Sung, “Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode),” 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vancouver, BC, Canada, 2022, pp. 249-252, doi: 10.1109/ISPSD49238.2022.9813639.

[C22] Stephen A. Mancini, Seung Y. Jang, Zeyu Chen, Dongyoung Kim, Justin Lynch, Yafei Liu, Balaji Raghothamachar, Minseok Kang, Anant K. Agarwal, Nadeemullah Mahadik, Robert Stahlbush, Michael Dudley, and Woongje Sung, “Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures,” 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2022, pp. P62-1-P62-6, doi: 10.1109/IRPS48227.2022.9764538.

[C21] Robert Stahlbush, Nadeemullah Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, and Anant K. Agarwal, “Defects in 4H-SiC epilayers affecting device yield and reliability,” 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2022, pp. P65-1-P65-6, doi: 10.1109/IRPS48227.2022.9764473.

[C20] Emran K. Ashik, Sundar B. Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, Woongje Sung, Ayman Fayed, Anant K. Agarwal, and Bongmook Lee, “Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications,” 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2022, pp. 3B.4-1-3B.4-8, doi: 10.1109/IRPS48227.2022.9764565.

[C19] Nick Yun, Justin Lynch, Skylar DeBoer, Adam J. Morgan, Woongje Sung, Diang Xing, Minseok Kang, Anant K. Agarwal, Victor Veliadis, Voshadhi Amarasinghe, and John Ransom, “Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry,” 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, 2021, pp. 361-365, doi: 10.1109/WiPDA49284.2021.9645146.

[C18] Sundar B. Isukapati, Adam J. Morgan, Woongje Sung, Hua Zhang, Tianshi Liu, Ayman Fayed, Anant K. Agarwal, Emran Ashik and Bongmook Lee, “Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications,” 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, 2021, pp. 118-122, doi: 10.1109/WiPDA49284.2021.9645134.

[C17]Shengnan Zhu, Tianshi Liu, Limeng Shi, Michael Jin, Hema Lata Rao Maddi, Marvin H. White, and Anant K. Agarwal, “Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET,” 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, 2021, pp. 1-4, doi: 10.1109/WiPDA49284.2021.9645100.

[C16] Dongyoung Kim, Nick Yun, Skylar DeBoer, Adam J. Morgan, Seung Y. Jang, Woongje Sung, Junchong Fan, Susanna Yu, Minseok Kang, and Anant K. Agarwal, “A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology,” 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, 2021, pp. 9-13, doi: 10.1109/WiPDA49284.2021.9645098.

[C15]Tianshi Liu, Shengnan Zhu, Michael Jin, Limeng Shi, Marvin H. White, and Anant K. Agarwal, “Impacts of Area-Dependent Defects on the Yield and Gate Oxide Reliability of SiC Power MOSFETs,” 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, 2021, pp. 5-8, doi: 10.1109/WiPDA49284.2021.9645099.

[C14]Tianshi Liu, Hua Zhang, Sundar B. Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Marvin H. White, Ayman Fayed, and Anant K. Agarwal, “SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology,” 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), Lansing, MI, USA, 2021, pp. 966-969, doi: 10.1109/MWSCAS47672.2021.9531903.

[C13]Diang Xing, Xintong Lyu, Jiawei Liu, Chen Xie, Anant K. Agarwal, and Jin Wang, “3300-V SiC MOSFET Short-Circuit Reliability and Protection,” 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Phoenix, AZ, USA, 2021, pp. 1262-1266, doi: 10.1109/APEC42165.2021.9487116.

[C12]Diang Xing, Xiao Li, Yue Zhang, Qianyi Cheng, Zhining Zhang, Boxue Hu, Anant K. Agarwal, Jin Wang, and Robert Guenther, “MMC-Based High Gain Solid-State Transformers for Energy Storage Applications,” 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Phoenix, AZ, USA, 2021, pp. 1996-2002, doi: 10.1109/APEC42165.2021.9487233.

[C11] Sundar B. Isukapati, Hua Zhang, Tianshi Liu, Emran Ashik, Bongmook Lee, Adam J. Morgan, Woongje Sung, Ayman Fayed, and Anant K. Agarwal, “Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology,” 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 267-270, doi: 10.23919/ISPSD50666.2021.9452235.

[C10]Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, and David Sheridan, “Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs,” 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2021, pp. 1-7, doi: 10.1109/IRPS46558.2021.9405230.

[C9]Diang Xing, Chen Xie, Ke Wang, Tianshi Liu, Boxue Hu, Jin Wang, Anant K. Agarwal, Ranbir Singh, and Stanley Atcitty, “3.3-kV SiC MOSFET Performance and Short-Circuit Capability,” 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Suita, Japan, 2020, pp. 1-6, doi: 10.1109/WiPDAAsia49671.2020.9360270.

[C8] Dongyoung Kim, Adam J. Morgan, Nick Yun, Woongje Sung, Anant K. Agarwal, and Robert Kaplar, “Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness,” 2020 IEEE International Reliability Physics Symposium (IRPS), TX, USA, 2020, pp. 1-6, doi: 10.1109/IRPS45951.2020.9128324.

[C7]Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, and Anant K. Agarwal, “Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs,” 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2020, pp. 1-5, doi: 10.1109/IRPS45951.2020.9129071.

[C6]Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, and Anant K. Agarwal, “Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs,” 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2020, pp. 1-5, doi: 10.1109/IRPS45951.2020.9129486.

[C5]Susanna Yu, Minseok Kang, Tianshi Liu, Diang Xing, Arash Salemi, Marvin H. White, and Anant K. Agarwal, “Bias-Induced Threshold Voltage Instability and Interface Trap Density Extraction of 4H-SiC MOSFETs,” 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Raleigh, NC, USA, 2019, pp. 420-424, doi: 10.1109/WiPDA46397.2019.8998931.

[C4]Minseok Kang, Susanna Yu, Diang Xing, Tianshi Liu, Arash Salemi, Kristen Booth, Shengnan Zhu, Marvin H. White, and Anant K. Agarwal, “Body Diode Reliability of Commercial SiC Power MOSFETs,” 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Raleigh, NC, USA, 2019, pp. 416-419, doi: 10.1109/WiPDA46397.2019.8998940.

[C3]Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, and Anant K. Agarwal, “Gate Leakage Current and Time-Dependent Dielectric Breakdown Measurements of Commercial 1.2 kV 4H-SiC Power MOSFETs,” 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Raleigh, NC, USA, 2019, pp. 195-199, doi: 10.1109/WiPDA46397.2019.8998792.

[C2]Diang Xing, Boxue Hu, Susanna Yu, Yue Zhang, Tianshi Liu, Arash Salemi, Minseok Kang, Jin Wang, and Anant K. Agarwal, “Current Saturation Characteristics and Single-Pulse Short-Circuit Tests of Commercial SiC MOSFETs,” 2019 IEEE Energy Conversion Congress and Exposition (ECCE), Baltimore, MD, USA, 2019, pp. 6179-6183, doi: 10.1109/ECCE.2019.8913178.

[C1]Diang Xing, Tianshi Liu, Susanna Yu, Minseok Kang, Arash Salemi, Marvin H. White, and Anant K. Agarwal, “Design Strategies for Rugged SiC Power Devices,” 2019 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2019, pp. 1-5, doi: 10.1109/IRPS.2019.8720557.