Affiliated Researchers and Visiting Scholars

Nikhil Bhardwaj

nikhil.b255@gmail.com

Nikhil Bhardwaj received his B. Tech degree in Electrical Engineering from the Malaviya National Institute of Technology (MNIT) Jaipur, India. He received his M. Tech degree in Electrical Engineering, from Indian Institute of Science (IISc), Bengaluru, India. He is pursuing his Ph.D. in the Electrical Engineering department of the Indian Institute of Technology Bombay (IITB), India. He has done part of his research at the Ohio State University, Columbus, Ohio, USA, as an IITB-OSU Frontier Scholar. His research interest includes Reliability studies of SiC power devices.

 

Ryoya Ishikawa

ishikawa@semicon.kuee.kyoto-u.ac.jp

Ryoya Ishikawa received his M.S. and B.S. degrees in Electric and Electronic Engineering at Kyoto University, Japan in May 2020 and May 2022, respectively. He is currently pursuing a Ph.D. degree at Kyoto University under the supervision of Professor Tsunenobu Kimoto. He stayed at the OSU ECE WBG group from May to Sep. in 2023 as a visiting scholar and worked on reliability research on SiC power devices. His research also focuses on experimental determination of physical properties such as carrier mobility and theoretical calculation of the carrier transport mechanisms in SiC.

 

Aditya Aman

aman.43@osu.edu

 

Suvendu Nayak

suvendunayak7@gmail.com

Mr. Nayak received his B. Tech degree in Electronics and Telecommunication Engineering from the Biju Patnaik University of Technology, Odisha, India (BPUT). He received his M. Tech degree in Microelectronics and VLSI design from Motilal Nehru National Institute of Technology, Allahabad, India (MNNIT). Mr. Nayak was awarded the gold medal for his merit. He is doing his Ph.D. in the Electrical Engineering department of the Indian Institute of Technology Bombay, India (IIT Bombay). He has done part of his research at the Ohio State University, Columbus, Ohio, USA, as an IITB-OSU Frontier Scholar. His research interest includes Power device modeling, simulation, characterization, design, hierarchical analysis from material to the circuit, SiC power devices and circuits, and design solutions to improve the performance and ruggedness of power devices.