Wide Bandgap Power Electronics
Physical Mechanisms Inside High Electron Mobility Transistors
A combination of mechanical strain, temperature, and defect formation inside AlGaN/GaN HEMTs determines state-of-the-art performance and lifetime
3-Dimensional Probe on a Nanometer Scale
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Electric -> Mechanical Stress -> Native Defects -> Electric Potential Changes
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Related Publications
- Chung-Han Lin, Tyler A. Merz, D. R. Doutt, Jungwoo Joh, Jesus A. Del Alamo, U.K. Mishra, and Leonard J. Brillson, “Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale,” IEEE Trans. Electron. Dev. 59, 2667 (2012). doi: 10.1109/TED.2012.2206595
- C-H. Lin, D.R. Doutt, U.K. Mishra, T.A. Merz, and L.J. Brillson, “Field-Induced Strain Degradation of AlGaN/GaN HEMTs on a Nanometer Scale,” Appl. Phys. Lett., 97, 223502 (2010).