Emerging Optoelectronics

Emerging Optoelectronics – ZnO

ZnO Schottky Barriers, Native Point Defects, and Nanostructures

The interplay of defects and dopants at ZnO surfaces and interfaces opens a new avenue to control rectifying contacts, ohmic contacts, and doping

Defect Identification: Cathodoluminescence vs. Positron Annihilation Spectroscopy

ZnO Nanostructure Growth-Induced Defect Formation

Related Publications

  • Y. Dong, F. Tuomisto, B.G. Svensson, A. Yu. Kuznetsov, and L.J. Brillson, “Vacancy Defect and Defect Cluster Energetics In Ion-implanted ZnO,” Phys. Rev. B, Rapid Communications 81, 081201(R) (2010). doi: 10.1103/PhysRevB.81.081201
  • T. A. Merz, D.R. Doutt, T. Bolton, Y. Dong, and L.J. Brillson, “Native Defect Formation with ZnO Nanostructure Growth,” Surf. Sci. Lett. 605, L20-L23 (2011). doi:10.1016/j.susc.2010.12.021