Zhao Laboratory

Welcome to the Zhao Laboratory-WBG / UWBG Semiconductors, Electronic, Optoelectronics and Energy

The OSU MOCVD wide band gap (WBG) and ultra wide band gap (UWBG) Semiconductors, Electronics, Optoelectronics and Energy Laboratory is led by Prof. Hongping Zhao.

Our research focuses on the investigation of the growth and physics of WBG and UWBG semiconductor electronic and optoelectronic materials and devices, metalorganic chemical vapor deposition (MOCVD) of III-nitride and II-IV-nitride semiconductor thin films and devices, low pressure chemical vapor deposition (LPCVD) of Gallium Oxide thin films, the physics of low-dimensional semiconductor nano-materials/devices,  chemical vapor deposition (CVD) of novel nanomaterials, and device design / fabrication of novel devices with new functionality.

Fundamental knowledge from quantum mechanics, quantum electronics / optics, solid state physics, semiconductor physics, and electromagnetics will be used to solve problems related to semiconductor, electronics, optoelectronics and energy.

What’s New

  • Oct. 2020
    • Prof. Zhao gave an invited talk “MOCVD GaN-on-GaN Towards Vertical Power Devices & MOCVD Development of β-Ga2O3” at the PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), Oct. 2020 (Virtual)
    • Our collaborative paper with Prof. Ringel’s group “Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3”, was accepted for publication at Applied Physics Letters
  • Sep. 2020
  • Aug. 2020
    • Our group’s review article “High-temperature low pressure chemical vapor deposition of β-Ga2O3” was accepted for publication at JVST A
    • Our paper “Quantitative defects analysis in MOCVD GaN-on-GaN using cathodoluminescence” was accepted for publication at Optics Express
  • July 2020
    • Prof. Zhao gave an invited talk at the OSA Advanced Photonics Congress Integrated Photonics Research, Silicon and Nanophotonics (IPR) (Virtual)
    • Our collaborative paper with Prof. Rajan’s group “Design and Fabrication of Vertical GaN PN Diode With Step-etched Triple Zone JTE”, was accepted for publication at IEEE Transactions on Electron Devices
    • Our collaborative paper with Prof. Len Brillson’s group “Neutron Irradiation and Forming Gas Anneal Impact on β-Ga2O3 Deep Level Defects”, was accepted for publication at J. Phys. D: Applied Physics
  • June 2020
  • May 2020
    • Our paper “Probing charge transport and background doping in MOCVD grown (010) β-Ga2O3,” was accepted for publication at Phys. Status Solidi RRL
    • Our paper “Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: toward GaN vertical power devices” was accepted for publication at JAP
    • Our paper “Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition” was accepted for publication at AIP Advances
    • Our paper “MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties” is among Most Read Scilights from 2018-2019
  • Apr. 2020
    • Congratulations to Reza and Zixuan for passing PhD Candidacy Exam!
    • Congratulations to Anhar for passing PhD Qualifying Exam!
    • Congratulations to Lingyu and Chenxi for successfully defended MS Thesis!
  • Mar. 2020
    • Our collaborative paper with Prof. Len Brillson’s group “Deep Level Defects and Cation Sublattice Disorder in ZnGeN2” was accepted for publication at JAP
    • Our collaborative paper with Prof. Baishakhi Mazumder’s group “A combined approach of Atom Probe Tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3” was accepted for publication at APL
  • Feb. 2020
    • Our paper “Phase Transformation in MOCVD Growth of (AlxGa1-x)2O3 Thin Films” was accepted for publication at APL Materials
    • Prof. Zhao gave an invited talk at the 2020 SPIE Photonics West Conference, San Francisco, CA, Feb. 2020.
    • Prof. Zhao visited the Lawrence Livermore National Laboratory and gave a seminar on Feb. 4, 2020.
  • Jan. 2020
    • Prof. Zhao gave a department seminar at the Department of Materials Science & Engineering at NC State University
    • Prof. Zhao gave an invited talk at the 47th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-47), Boulder, Colorado
    • Prof. Zhao attended the U.S. Department of Energy Lighting R&D Workshop, San Diego, CA
    • Our collaborative paper with Prof. Steven A. Ringel’s group “Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition” was accepted for publication at APL Materials
    • Welcome PhD student Evan M. Cornuelle joining our group
  • Dec. 2019
    • Our collaborative paper with Prof. Kathleen Kash’s group “Metalorganic chemical vapor deposition of ZnGeGa2N4” was accepted for publication at ACS Crystal Growth & Design
  • Nov. 2019
    • Congratulations to PhD student Zixuan Feng for receiving the best student paper award “LPCVD Growth of Si Doped β-Ga2O3 Thin Films with Superior Room Temperature Mobilities” at the 2019 Electronic Materials Conference (EMC) at the University of Michigan, Ann Arbor, in June 2019.
  • Sep. 2019
    • Our paper “MOCVD Epitaxy of β-(AlxGa1-x)2O3 Thin Films on (010) Ga2O3 Substrates and N-type Doping” was accepted for publication at Applied Physics Letters
      • This article was selected as Editor’s Pick
  • Aug. 2019
    • Graduate students Z. Feng, A F M Anhar Bhuiyan, Y. Zhang presented at the IWGO conference, Columbus, OH
    • Congratulations to PhD student Zixuan Feng for receiving the best student paper award “MOCVD Epitaxy of Si-Doped β- Ga2O3 Thin Films with Record High Electron Mobilities” at The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3).
  • Jul. 2019
    • Our paper “MOCVD growth of ZnGeN2 films on sapphire” was accepted for publication at ACS Crystal Growth & Design
  • Jun. 2019
    • Graduate students M. Karim, Z. Feng, and Y. Zhang presented at the EMC meeting, Ann Arbor, MI
    • Our paper “MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties” was published at Applied Physics Letters as a featured article
      • AIP Scilight: https://doi.org/10.1063/1.5116577
  • May 2019
    • Congratulations to Tong Ji and Wentao Meng for earning their master’s degree!
  • Apr. 2019
    • Our paper “Ultrafast Growth Rate and High Mobility In2O3 Films Grown on C-Sapphire via Low Pressure Chemical Vapor Deposition” was published at Journal of Applied Physics
  • Mar. 2019
  • Feb. 2019
    • Prof. Zhao gave an invited talk at the 2019 SPIE Photonics West Conference, San Francisco, CA, Feb. 2019.
    • Our paper “Low pressure chemical vapor deposition of In2O3 films on off-axis c-sapphire substrates” was accepted for publication at ACS Crystal Growth & Design
  • Jan. 2019
  • Dec. 2018
  • Nov. 2018
    • Congratulations to Md Rezaul Karim and Zixuan Feng for passing their PhD qualifying exams!
    • Our group’s paper was on the APL’s top cited article list:  https://aip-info.org/1XPS-5YA4E-30C9NY3CD7/cr.aspx
    • Our group’s INVITED paper “Low Pressure Chemical Vapor Deposition of β-Ga2O3 thin films: dependence on growth parameters” was accepted for publication at APL Materials.
  • Sep. 2018
    • Prof. Zhao gave an invited talk at at the 2018 E-MRS Fall Meeting, Warsaw, Poland, Sep. 2018.
  • Aug. 2018
    • Our collaborative paper with Dr. Shin Mou’s team at AFRL “Donors and Acceptors in β-Ga2O3” was accepted for publication at Applied Physics Letters
    • Our work on “Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes” was highlighted at Semiconductor Todayhttp://www.semiconductor-today.com/news_items/2018/aug/osu_020818.shtml
    • Prof. Zhao gave an invited talk “LPCVD Grown β-Ga2O3: Materials and devices” (Advanced Wide Bandgap Materials Technologies) at the 2018 SPIE Optics+Photonics, San Diego, CA
  • July 2018
    • NSF DMREF Project Workshop “SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures” was successfully organized at OSU Nanotech West Laboratory on July 20, 2018
    • 13 graduate students and research scientists from Profs. Zhao, Kash and Lambrecht’s groups attended and presented their work related to the project
  • July 2018
    • Our paper “Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes” was accepted for publication at Journal of Applied Physics
    • Our paper “LPCVD growth of wide bandgap semiconductor In2O3 films” was accepted for publication at ACS Crystal Growth & Design
    • Our collaborative paper with Prof. Feng’s group (CWRU) “β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection” was accepted for publication at IEEE Electron Device Letters
  • May 2018
    • Our collaborative paper with Prof. Brillson’s group (OSU) “Optical Signatures of Deep Level Defects in Ga2O3” was accepted for publication at Applied Physics Letters
    • Prof. Zhao gave a talk “LPCVD of β-Ga2O3 and In2O3” (Cross Cutting Session: Energy Conversion and Storage) at the 2018 OSU Materials Week
  • Apr. 2018
    • Our paper “ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration” was published at ECS Journal of Solid State Science and Technology
  • Feb. 2018
    • Our collaborative paper with Dr. Selim Elhadj’s team (Lawrence Livermore National Laboratory) “Lifetime laser damage performance of β-Ga2O3 for high power applications” was accepted for publication at APL Materials
    • Editor’s Picks and Featured Articles at APL Materials
  • Jan. 2018
    • Our collaborative paper with Prof. Lussem’s group (Kent State U.) “Tuning charge carrier transport and optical birefringence in liquid-crystalline thin films: A new design space for organic light-emitting diodes” was accepted for publication at Scientific Reports
    • Our paper “LPCVD Homoepitaxy of Si Doped β-Ga2O3 Thin Films on (010) and (001) Substrates” was accepted for publication at Applied Physics Letters
    • Our collaborative paper with Prof. Rajan’s group “LPCVD grown β-Ga2O3 Bevel Field-plated Schottky Barrier Diodes” was accepted for publication at APEX
  • Dec. 2017 – Congratulations to Subrina Rafique for her successful Ph.D. dissertation defense! Subrina will join Intel.
  • Nov. 2017 – Our collaborative paper with Prof. Feng’s group (CWRU) “Free-Standing β-Ga2O3 Thin Diaphragms” was accepted for publication at Journal of Electronic Materials
  • Nov. 2017 – Our collaborative paper with Prof. Feng’s group (CWRU) “Ultra-Wide-Bandgap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion” was accepted for publication at ACS Applied Materials & Interfaces
  • Nov. 2017 – Our paper “Towards High-Mobility Heteroepitaxial β-Ga2O3 on Sapphire – Dependence of the Substrate off-axis Angle was accepted for publication at Phys. Status Solidi A
  • Oct. 2017 – Prof. Zhao was appointed as an associate editor for Applied Physics Letters
  • Oct. 2017 – Prof. Zhao gave an invited talk at the 232th ECS Meeting, National Harbor, Maryland
  • Oct. 2017 – Our group’s lab space in Caldwell Lab 307/311 finished renovation. Ready to move in!
  • Sep. 2017 – Prof. Zhao gave a Physics Department Seminar at Purdue University
  • Sep. 2017 – Dual-chamber MOCVD system was delivered to OSU Nanotech West Laboratory
  • Aug. 2017 – Our research group moved to OSU
  • Jul. 2017 – Our group’s first Ph.D. graduate Dr. Lu Han joined Intel