Zhao Laboratory

Welcome to the Zhao Laboratory-WBG / UWBG Semiconductors, Electronic, Optoelectronics and Energy

The OSU MOCVD wide band gap (WBG) and ultra wide band gap (UWBG) Semiconductors, Electronics, Optoelectronics and Energy Laboratory is led by Prof. Hongping Zhao.

Our research focuses on the investigation of the growth and physics of WBG and UWBG semiconductor electronic and optoelectronic materials and devices, metalorganic chemical vapor deposition (MOCVD) of III-nitride,  II-IV-nitride and oxide semiconductor thin films and devices, low pressure chemical vapor deposition (LPCVD) of Gallium Oxide thin films, the physics of low-dimensional semiconductor nano-materials/devices,  chemical vapor deposition (CVD) of novel nanomaterials, and device design / fabrication of novel devices with new functionality.

Fundamental knowledge from quantum mechanics, quantum electronics / optics, solid state physics, semiconductor physics, and electromagnetics will be used to solve problems related to semiconductor, electronics, optoelectronics and energy.

What’s New

  • II-IV-N2 DMREF Data Website
  • Dec. 2024
    • Our paper “MOCVD Growth of β-Ga2O3 with Fast Growth Rates (˃ 4.3 μm/h), Low Controllable Doping and Superior Transport Properties” was published in APL
    • Our collaborative paper with Dr. T. Laurence’s team at LLNL, Prof. W. Lu’s group at OSU, Dr. T. Hashimoto’s team at SixPoint Materials, and Profs. Dupuis and Shen’s groups at Georgia Tech “Three-Dimensional Photoluminescence Imaging of Threading Dislocations in GaN by Sub-band Optical Excitation” was accepted to publish in Scientific Report
  • Nov. 2024
    • Prof. Zhao gave an invited seminar at University of Notre Dame “Advancing WBG and UWBG Semiconductors for Power Electronics”
    • Prof. Zhao gave a tutorial “Development of Semiconductors for New Generation Power Electronics: From Wide Bandgap GaN to Ultrawide Bandgap Ga2O3, (AlxGa1-x)2O3 and LiGa5O8” at The 11th IEEE Workshop on Wide Bandgap Power Devices & Applications, WiPDA 2024, Dayton, Ohio
  • Sep. 2024
    • New student Abdul Mukit Majunder joined our group as a PhD student
  • Aug. 2024
    • Ohio State hosts GOX2024 workshop on gallium oxide research:
    • Link
    • Link
    • Graduate students Lingyu Meng, Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram presented at GOX2024 Workshop
    • Prof. Zhao gave an invited seminar at University of Michigan Ann Arbor “Advancing Semiconductors for Power Electronics: From Wide Bandgap GaN to Ultrawide Bandgap Ga2O3 and (AlxGa1-x)2O3“
  • July 2024
    • Our collaborative paper with Prof. Uttam Singisetti’s group at U. at Buffalo “Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown” was accepted to publish in APL
  • June 2024
    • Our collaborative paper with Prof. Uttam Singisetti’s group at U. at Buffalo “High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes” was published in J. Vac. Sci. Technol. A. https://doi.org/10.1116/6.0003533 
  • May 2024
    • Prof. Zhao gave an invited seminar at University of Maryland: “Next Generation Power Electronics: From Wide Bandgap GaN to Ultrawide Bandgap Ga2O3 and (AlxGa1-x)2O3“.
  • Apr. 2024
    • Congratulations to Lingyu for passing his PhD candidacy examination!
    • Our paper “Wet and Dry Etching of Ultrawide Bandgap LiGa5O8 and LiGaO2” was accepted to publish in  J. Vac. Sci. Technol. B
    • Our paper “MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates”, was accepted to publish in ACS Crys. Growth Des
  • Mar. 2024
    • Prof. Zhao gave an invited seminar at CWRU: “Next Generation Power Electronics: From Wide Bandgap GaN to Ultrawide Bandgap Ga2O3, (AlxGa1-x)2O3 and LiGa5O8”.
    • Prof. Zhao attended the ARPA-E Ultrafast project kickoff meeting in Chicago.
    • Our paper “Experimental Determination of the Band Offsets at the UWBG p-LiGa5O8/Ga2O3 Interface” was accepted to publish in APL.
    • Our collaborative paper with Prof. Baishakhi Mazumder’s group at University at Buffalo “Microscopic and Spectroscopic Investigation of (AlxGa1-X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content” was accepted to publish in Advanced Materials Interfaces.
  • Jan. 2024
    • Prof. Zhao gave an invited seminar at UIUC: “Next Generation Power Electronics: From Wide Bandgap GaN to Ultrawide Bandgap Ga2O3 and (AlxGa1-x)2O3”.
  • Dec. 2023
    • Our paper “Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters” was accepted to publish in JAP.
  • Nov. 2023
    • GOX 2024 (The 7th US Gallium Oxide Workshop) will be held at The Ohio State University Campus, Columbus, Ohio on Aug. 5-7, 2024. Prof. Zhao and Dr. Andrew Green (AFRL) will co-chair this workshop.
    • Congratulations to Dong Su for passing his PhD qualifying examination!
    • Prof. Zhao gave an invited talk for the DOE EFRC Ultra Center “MOCVD Development of UWBG Ga2O3, AlGaO and Heterostructures”
  • Oct. 2023
    • Our paper “The effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits ” was accepted to publish in JVST B.
    • Our paper “Suppressing carbon incorporation in MOCVD GaN using high offcut-angled substrates” was accepted to publish in Physica Status Solidi (RRL) – Rapid Research Letters.
    • Our paper “Discovery of a robust p-type ultrawide bandgap oxide semiconductor: LiGa5O8” was accepted to publish in Advanced Electronic Materials.
    • Our collaborative paper with Prof. Zetian Mi’s group at University of Michigan, Ann Arbor “Tunable Bandgap and Si-Doping in N-Polar AlGaN on C-face 4H-SiC via Molecular Beam Epitaxy” was accepted to publish in Appl. Phys. Letts.
  • Sep. 2023
    • Our collaborative paper with Prof. Wu Lu’s group at OSU “7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management” was accepted to publish in Appl. Phys. Letts.
    • Our collaborative paper with Prof. Uttam Singisetti’s group at U. at Buffalo “Electrical Characteristics of in situ Mg-doped β-Ga2O3 Current-Blocking Layer for Vertical Devices” was accepted to publish in Appl. Phys. Letts.
    • Our collaborative paper with Prof. Steven Ringel and Prof. Aaron Arehart’s group at OSU “Trap characterization of high-growth-rate laser-assisted MOCVD GaN” was accepted to publish in Appl. Phys. Letts.
  • Aug. 2023
    • Vijay gave his first conference talk “Suppressing Carbon Incorporation in MOCVD GaN for Vertical Power Device Applications” at the LEC 2023 conference in Chicago, IL, Aug. 7-9, 2023.
    • Prof. Zhao gave an invited talk “MOCVD growth of GaN and (Al)GaO for power electronic devices” at the LEC 2023 conference in Chicago, IL, Aug. 7-9, 2023.
    • Anhar, Lingyu, Kaitian, Dong Su attended the 6th GOX U.S. Gallium Oxide Workshop in Buffalo, New York, Aug. 13-16, 2023. Anhar, Lingyu and Kaitian gave their presentations at the conference.
    • Our paper “MOCVD growth of thick β-(Al)GaO films with fast growth rates” was accepted to publish in Crystal Growth & Design
  • July 2023
    • Congratulations to A F M Anhar Uddin Bhuiyan for his successful Ph.D. dissertation defense! Anhar will join UMass Lowell as a tenure-track Assistant Professor.
    • Our paper “Al incorporation up to 99% in MOCVD grown monoclinic (AlxGa1-x)2O3 films using trimethylgallium” was accepted to publish in Physica Status Solidi (RRL) – Rapid Research Letters
    • Our collaborative paper with Prof. Xiuling Li’s group at UT Austin and Prof. Wenjuan Zhu’s group at UIUC “Temperature Dependent Characteristics of Lateral β-Ga2O3 Fin-MOSFETs by MacEtch” was accepted to publish in Appl. Phys. Letts.
  • May 2023
    • Our paper “The role of Carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor” was accepted to publish in Appl. Phys. Letts.
    • Our invited tutorial paper “Tutorial: Metalorganic Chemical Vapor Deposition of β-Ga2O3 thin films, alloys and heterostructures” was accepted to publish in J. Appl. Phys.
    • Our collaborative paper with Prof. Uttam Singisetti’s group at UB “Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX,” was published online today, 05-04-2023, in Appl. Phys. Letts. (Vol.122, Issue 18).
  • Apr. 2023
    • Our collaborative paper with Prof. Martin Feneberg’s group at University Magdeburg “Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlxGa1-x)2O3 alloys”, was accepted for publication in Japanese Journal of Applied Physics.
    • Our collaborative paper with Prof. Uttam Singisetti’s group at UB “Electrical Characteristics of in situ Mg-doped β-Ga2O3 Current-Blocking Layer for Vertical Devices”, was accepted for publication in Appl. Phys. Letts.
    • Our paper “Investigation of carbon incorporation in laser-assisted MOCVD of GaN” was accepted for publication in Appl. Phys. Letts.
  • Mar. 2023
    • Our paper “Metalorganic Chemical Vapor Deposition of β-(AlxGa1-x)2O3 thin films on (001) β-Ga2O3 substrates” was accepted for publication in APL Materials
    • Our paper “Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes” was accepted for publication in JVST A.
    • Prof. Zhao starts to serve as an Associate Editor for the Journal of Crystal Growth
    • Our collaborative paper with Prof. Lu’s group at OSU “Vertical GaN-on-GaN PN Power Diodes with Baliga Figure of Merit of 27 GW/cm2“, was accepted for publication in Appl. Phys. Letts.
  • Jan. 2023
    • Our collaborative paper with Prof. Ringel’s group at OSU “Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3“, was published in JAP.
  • Nov. 2022
    • Congratulations to A F M Anhar Uddin Bhuiyan for receiving the Presidential Fellowship – the most prestigious award given by the Graduate School!
    • Prof. Zhao was invited to participate the NSF sponsored “Materials with Long Range Order (MLRO) Workshop”, Nov. 16-17, 2022. (Virtual)
    • Congratulations to Vijay for passing his PhD qualifying examination!
    • Our collaborative paper with Prof. Singisetti’s group at U. at Buffalo “Vacuum annealed β-Ga2O3 recess channel MOSFETs with 8.56 kV Breakdown Voltage”, was accepted for publication in IEEE Electron Device Letters.
  • Oct. 2022
    • Prof. Zhao gave an invited talk at the 4th IWGO (The 4th International Workshop on Gallium Oxide and Related Materials), Oct. 21-24, 2022, Nagano, Japan
    • Our paper “Metalorganic Chemical Vapor Deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates” was accepted for publication in JVST A.
    • Our paper “MOCVD growth and band offsets of κ-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates” was accepted for publication in JVST A.
    • Prof. Zhao gave an invited talk at the 242nd ECS meeting (digital presentation), October 9-13, 2022, Atlanta, GA
  • Sep. 2022
    • Our paper “In-situ MOCVD Growth and Band Offsets of Al2O3 Dielectric on β-Ga2O3 and β-(AlxGa1-x)2O3 thin films”, was accepted for publication in J. Appl. Phys.
    • Our collaborative paper with Prof. Steve Ringel’s group at OSU “Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3“, was accepted for publication in APL Materials.
  • Aug. 2022
    • Prof. Zhao gave an invited talk at the GOX 2022, Washington DC, Aug. 8-10, 2022.
    • Prof. Zhao gave an invited talk at the SiC Workshop 2022, Cleveland, OH, Aug. 10-11, 2022.
  • Jul. 2022
    • Prof. Zhao delivered a plenary talk “MOCVD of (Al,Ga)2O3: alloys, phases, heterostructures and doping” at the ICMOVPE XX conference, Stuttgart, Germany.
    • Congratulations to Yuxuan Zhang for his successful Ph.D. dissertation defense!
    • Our collaborative paper with Prof. Xiuling Li’s group at UT Austin “β-Ga2O3 FinFETs with ultra-low hysteresis by Plasma-Free Metal-Assisted Chemical Etching”, was accepted for publication in APL.
      • This paper was promoted as an Editor’s Pick!
    • Our paper “Pulsed-mode MOCVD growth of ZnSn(Ga)N2 and determination of the valence band offset with GaN”, was accepted for publication in Crystal Growth & Design.
  • Jun. 2022
    • Kaitian presented his talk “Pulsed-mode MOCVD growth of ZnSn(Ga)N2 and determination of the valence band offset with GaN” at the 64th EMC, Columbus, OH.
    • Lingyu presented his talk “MOCVD Epitaxy of β-Ga2O3 Thin Films on (100) β-Ga2O3 substrate” at the 64th EMC, Columbus, OH.
    • Yuxuan presented his talk “Correlating optical characteristics and electrical performance of vertical GaN-on-GaN PN diodes” at the 64th EMC, Columbus, OH.
    • Anhar presented his talk “MOCVD development and band offsets of ε-Ga2O3 on GaN, AlN, YSZ and c-sapphire substrates” at the 64th EMC, Columbus, OH.
    • Anhar presented his talk “MOCVD growth of Si doped (010) β-(AlxGa1-x)2O3 films: Structural and Electrical Properties” at the 64th EMC, Columbus, OH.
    • Anhar presented his talk “MOCVD Epitaxy of α-(AlxGa1-x)2O3 (x =0-100%) on m-Plane Sapphire Substrate” at the Compound Semiconductor Week 2022, Ann Arbor, MI.
  • May 2022
    • Prof. Zhao was promoted to Full Professor.
    • Prof. Zhao gave an invited talk “Status of MOCVD Development of UWBG Ga2O3, AlGaO and Heterostructures” at the MRS Spring Meeting, Honolulu, Hawaii.
    • Yuxuan presented his talk “MOCVD development of thick GaN for vertical high-power devices” at the MRS Spring Meeting, Honolulu, Hawaii.
    • Anhar presented his talk “In-situ MOCVD growth of dielectric Al2O3 on β-(AlxGa1-x)2O3: interfaces and band offsets” at the MRS Spring Meeting, Honolulu, Hawaii.
  • Apr. 2022
    • Our paper “High mobility MOCVD β-Ga2O3 epitaxy with fast growth rate using trimethylgallium”, was accepted for publication in Crystal Growth & Design.
    • Congratulations to Prof. Zhao for receiving the 2022 BEWEL Leadership in Innovation Award!
    • Congratulations to Anhar for passing his PhD candidacy examination!
    • Congratulations to Anhar for receiving the OSU CoE Exemplary Graduate Student Researcher Award!
    • Congratulations to Lingyu and Kaitian for passing their PhD qualifying examinations!
  • Mar. 2022
    • Our paper “Probing charge transport and background doping in MOCVD grown (010) β-Ga2O3,” published in Phys. Status Solidi RRL is a top cite article (*Citation data from Clarivate Analytics. Top cited articles published between 1 Jan 2020-31 Dec 2021.)
    • Our collaborative paper with Prof. Singisetti’s group at U. at Buffalo “Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates”, was accepted for publication in APL.
    • Our paper “Si doping in MOCVD grown (010) β-(AlxGa1-x)2O3 thin films” was accepted for publication in JAP.
  • Jan. 2022
    • Our collaborative paper with Prof. Lu’s group at OSU “GaN Power p-n Diodes on HVPE GaN Substrates with Near Unity Ideality Factor and <0.5 mΩ cm2 Specific On-Resistance”, was accepted for publication in Phys. Status Solidi RRL.
    • Our collaborative perspective paper with Prof. Philip Feng’s group at University of Florida “A Perspective on β-Ga2O3 Micro/Nanoelectromechanical Systems”, was accepted for publication in Appl. Phys. Letts.
  • Dec. 2021
    • Congratulations to Anhar for receiving the 63rd EMC Best Student Paper Award!
  • Nov. 2021
    • Our paper “Band structure engineering based on InGaN/ZnGeN2 heterostructure quantum wells for visible light emitters ” was accepted for publication in Crystal Growth & Design.
    • Prof. Zhao gave an invited talk “GaN-on-GaN vertical power devices & UWBG Ga2O3, AlGaO” at the 6th International Conference on Advanced Electromaterials (ICAE 2021) (08 Materials and Devices for Power Electronics), Nov. 2021.
    • Our collaborative paper with Prof. Wu Lu’s group at OSU “Design and Development of 1.5 kV Vertical GaN pn Diode on HVPE Substrate”, was accepted for publication in Journal of Materials Research.
  • Oct. 2021
    • Prof. Zhao gave an invited talk “Developments of WBG GaN-on-GaN vertical power devices & UWBG Ga2O3, AlGaO, and heterostructures” at the 240th ECS Meeting (H01: GaN and Related Devices), Oct. 2021 (Virtual).
  • Sep. 2021
    • Our paper “Metalorganic Chemical Vapor Deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates” was accepted for publication in APL Materials.
  • Aug. 2021
    • Our collaborative paper with Prof. Siddharth Rajan’s group at OSU “Planar and 3-dimensional damage free etching of β-Ga2O3 using atomic gallium flux”, was accepted for publication in Appl. Phys. Letts.
    • Our paper “Band offsets at metalorganic chemical vapor deposited β-(AlxGa1−x)2O3/β-Ga2O3 interfaces- Crystalline orientation dependence”, was accepted for publication in JVST A.
    • Our invited feature article “MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films” will be published in Journal of Materials Research.
    • Our collaborative paper with Prof. Sukwon Choi’s group at The Pennsylvania State University “Thermal Conductivity of β-phase Ga2O3 and (AlxGa1-x)2O3 Heteroepitaxial Thin Films”, was accepted for publication in ACS Appl. Mater. Interfaces.
    • Our collaborative paper with Prof. Len Brillson’s group at OSU “Depth-Resolved Cathodoluminescence and Surface Photovoltage Spectroscopies of Gallium Vacancies in β-Ga2O3 with Neutron Irradiation and Forming Gas Anneals”, was accepted for publication in J. Vac. Sci. Technol. B.
      • This article has been promoted as a “Featured Article”!
  • Jul. 2021
    • Congratulations to Zixuan Feng for his successful Ph.D. dissertation defense!
    • Our group’s authored and co-authored papers “Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films“, “Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition” are among APL Materials‘s most cited articles from 2020 and 2021.
  • Jun. 2021
    • Our collaborative paper with Prof. Mathias Schubert’s group at University of Nebraska-Lincoln “Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic In2O3”, was accepted for publication in Journal of Applied Physics.
    • Our collaborative paper with Prof. Philip Feng’s group at University of Florida “Young’s Modulus and Corresponding Orientation in β-Ga2O3 Thin Films Resolved by Nanomechanical Resonators”, was accepted for publication in Appl. Phys. Letts.
  • May 2021
    • AIP Applied Physics Letters publishes the Special Topic “Ultrawide Bandgap Semiconductors”
      • Guest Editorial: M. Higashiwaki, R. Kaplar, J. Pernot, H. Zhao, “Ultrawide bandgap semiconductors”, Appl. Phys. Lett. 118, 200401 (2021).
      • Collection of articles: Link
    • Prof. Zhao gave a seminar “Developments of Ga2O3, (AlxGa1-x)2O3 and Heterostructures” for The Leibniz ScienceCampus Growth and Fundamentals of Oxides (GraFOx).
    • Our paper “Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN” was accepted for publication in Phys. Status Solidi RRL
      • This paper has been selected as a front cover article!
  • Apr. 2021
    • Congratulations to Md Rezaul Karim for his successful Ph.D. dissertation defense! Reza will join Intel.
    • Congratulations to Benthara Hewage Dinushi Jayatunga for her successful Ph.D. dissertation defense! Dinushi will join Intel.
    • Congratulations to Kunxi Zhan for his successful MS thesis defense!
    • Congratulations to Yuxuan Zhang for passing his PhD candidacy examination!
    • Our collaborative paper with Dr. Jaime Freitas, Jr., and etc. at Naval Research Laboratory “Influence of oxygen partial pressure on properties of monoclinc Ga2O3 deposted on sapphire substrates”, was accpeted for publication in JVST A.
    • Our collaborative paper with Prof. Jinwoo Hwang’s and Prof. Siddharth Rajan’s groups at OSU and Prof. Chris Van de Walle’s group at UCSB “Atomic Scale Investigation of Aluminum Incorporation, Defects, and Phase Stability in β-(AlxGa1-x)2O3 Films”, was accepted for publication in APL Materials.
      • This article has been promoted as a “Featured Article”!
  • Mar. 2021
    • Congratulations to Prof. Zhao for receiving the 2021 Lumley Research Award
    • Our collaborative paper with Prof. Jung Hun Seo’s group at University of Buffalo “Large-Size Free-Standing Single-crystal β-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off”, was accepted for publication in Journal of Materials Chemistry C.
    • Our paper “Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN” was accepted for publication in Journal of Physics D: Applied Physics
  • Jan. 2021
    • Our paper “A two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition” was accepted for publication in JVST A.
    • Our collaborative paper with Prof. Mazumder’s group at University of Buffalo “Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography”, was accepted for publication in Journal of Physics D: Applied Physics
  • Dec. 2020
    • Our paper “MOCVD GaN with fast growth rate for vertical power device applications” was accepted for publication in Physica Status Solidi A: Applications and Materials Science
    • Our paper “Band Offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 Heterointerfaces Grown via MOCVD” was accepted for publication in Applied Physics Letters as part of the Special Topic Ultrawide Bandgap Semiconductors
      • This article has been promoted as an “Editor’s Pick”!
    • Our collaborative paper with Prof. Rajan’s group “Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Band gap Semiconductor Transistors” was accepted for publication in IEEE Transactions on Electron Devices
    • Our paper “MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping” is among the Most Read Editor’s Picks from 2019-2020:  https://aip-info.org/1XPS-758Q0-E3D2064BCC8CD950RPNYUL0EB11663629F7D76/cr.aspx
  • Nov. 2020
    • Our paper “Mg acceptor doping in MOCVD (010) β-Ga2O3” was accepted for publication in Applied Physics Letters as part of the Special Topic Ultrawide Bandgap Semiconductors
  • Oct. 2020
    • Prof. Zhao gave an invited talk “MOCVD GaN-on-GaN Towards Vertical Power Devices & MOCVD Development of β-Ga2O3” at the PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), Oct. 2020 (Virtual)
    • Our collaborative paper with Prof. Ringel’s group “Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3”, was accepted for publication in Applied Physics Letters as part of the Special Topic Ultrawide Bandgap Semiconductors
  • Sep. 2020
  • Aug. 2020
    • Our group’s review article “High-temperature low pressure chemical vapor deposition of β-Ga2O3” was accepted for publication in JVST A
    • Our paper “Quantitative defects analysis in MOCVD GaN-on-GaN using cathodoluminescence” was accepted for publication in Optics Express
  • July 2020
    • Prof. Zhao gave an invited talk at the OSA Advanced Photonics Congress Integrated Photonics Research, Silicon and Nanophotonics (IPR) (Virtual)
    • Our collaborative paper with Prof. Rajan’s group “Design and Fabrication of Vertical GaN PN Diode With Step-etched Triple Zone JTE”, was accepted for publication in IEEE Transactions on Electron Devices
    • Our collaborative paper with Prof. Len Brillson’s group “Neutron Irradiation and Forming Gas Anneal Impact on β-Ga2O3 Deep Level Defects”, was accepted for publication in J. Phys. D: Applied Physics
  • June 2020
  • May 2020
    • Our paper “Probing charge transport and background doping in MOCVD grown (010) β-Ga2O3,” was accepted for publication in Phys. Status Solidi RRL
    • Our paper “Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: toward GaN vertical power devices” was accepted for publication in JAP
    • Our paper “Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition” was accepted for publication in AIP Advances
    • Our paper “MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties” is among Most Read Scilights from 2018-2019
  • Apr. 2020
    • Congratulations to Reza and Zixuan for passing PhD Candidacy Exam!
    • Congratulations to Anhar for passing PhD Qualifying Exam!
    • Congratulations to Lingyu and Chenxi for successfully defended MS Thesis!
  • Mar. 2020
    • Our collaborative paper with Prof. Len Brillson’s group “Deep Level Defects and Cation Sublattice Disorder in ZnGeN2” was accepted for publication in JAP
    • Our collaborative paper with Prof. Baishakhi Mazumder’s group “A combined approach of Atom Probe Tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3” was accepted for publication in APL
  • Feb. 2020
    • Our paper “Phase Transformation in MOCVD Growth of (AlxGa1-x)2O3 Thin Films” was accepted for publication in APL Materials
    • Prof. Zhao gave an invited talk at the 2020 SPIE Photonics West Conference, San Francisco, CA, Feb. 2020.
    • Prof. Zhao visited the Lawrence Livermore National Laboratory and gave a seminar on Feb. 4, 2020.
  • Jan. 2020
    • Prof. Zhao gave a department seminar at the Department of Materials Science & Engineering at NC State University
    • Prof. Zhao gave an invited talk at the 47th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-47), Boulder, Colorado
    • Prof. Zhao attended the U.S. Department of Energy Lighting R&D Workshop, San Diego, CA
    • Our collaborative paper with Prof. Steven A. Ringel’s group “Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition” was accepted for publication in APL Materials
    • Welcome PhD student Evan M. Cornuelle joining our group
  • Dec. 2019
    • Our collaborative paper with Prof. Kathleen Kash’s group “Metalorganic chemical vapor deposition of ZnGeGa2N4” was accepted for publication in ACS Crystal Growth & Design
  • Nov. 2019
    • Congratulations to PhD student Zixuan Feng for receiving the best student paper award “LPCVD Growth of Si Doped β-Ga2O3 Thin Films with Superior Room Temperature Mobilities” at the 2019 Electronic Materials Conference (EMC) at the University of Michigan, Ann Arbor, in June 2019.
  • Sep. 2019
    • Our paper “MOCVD Epitaxy of β-(AlxGa1-x)2O3 Thin Films on (010) Ga2O3 Substrates and N-type Doping” was accepted for publication in Applied Physics Letters
      • This article was selected as Editor’s Pick
  • Aug. 2019
    • Graduate students Z. Feng, A F M Anhar Bhuiyan, Y. Zhang presented at the IWGO conference, Columbus, OH
    • Congratulations to PhD student Zixuan Feng for receiving the best student paper award “MOCVD Epitaxy of Si-Doped β- Ga2O3 Thin Films with Record High Electron Mobilities” at The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3).
  • Jul. 2019
    • Our paper “MOCVD growth of ZnGeN2 films on sapphire” was accepted for publication in ACS Crystal Growth & Design
  • Jun. 2019
    • Graduate students M. Karim, Z. Feng, and Y. Zhang presented at the EMC meeting, Ann Arbor, MI
    • Our paper “MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties” was published in Applied Physics Letters as a featured article
      • AIP Scilight: https://doi.org/10.1063/1.5116577
  • May 2019
    • Congratulations to Tong Ji and Wentao Meng for earning their master’s degree!
  • Apr. 2019
    • Our paper “Ultrafast Growth Rate and High Mobility In2O3 Films Grown on C-Sapphire via Low Pressure Chemical Vapor Deposition” was published in Journal of Applied Physics
  • Mar. 2019
  • Feb. 2019
    • Prof. Zhao gave an invited talk at the 2019 SPIE Photonics West Conference, San Francisco, CA, Feb. 2019.
    • Our paper “Low pressure chemical vapor deposition of In2O3 films on off-axis c-sapphire substrates” was accepted for publication in ACS Crystal Growth & Design
  • Jan. 2019
  • Dec. 2018
  • Nov. 2018
    • Congratulations to Md Rezaul Karim and Zixuan Feng for passing their PhD qualifying exams!
    • Our group’s paper was on the APL’s top cited article list:  https://aip-info.org/1XPS-5YA4E-30C9NY3CD7/cr.aspx
    • Our group’s INVITED paper “Low Pressure Chemical Vapor Deposition of β-Ga2O3 thin films: dependence on growth parameters” was accepted for publication in APL Materials.
  • Sep. 2018
    • Prof. Zhao gave an invited talk at at the 2018 E-MRS Fall Meeting, Warsaw, Poland, Sep. 2018.
  • Aug. 2018
    • Our collaborative paper with Dr. Shin Mou’s team at AFRL “Donors and Acceptors in β-Ga2O3” was accepted for publication in Applied Physics Letters
    • Our work on “Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes” was highlighted at Semiconductor Today:  http://www.semiconductor-today.com/news_items/2018/aug/osu_020818.shtml
    • Prof. Zhao gave an invited talk “LPCVD Grown β-Ga2O3: Materials and devices” (Advanced Wide Bandgap Materials Technologies) at the 2018 SPIE Optics+Photonics, San Diego, CA
  • July 2018
    • NSF DMREF Project Workshop “SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures” was successfully organized at OSU Nanotech West Laboratory on July 20, 2018
    • 13 graduate students and research scientists from Profs. Zhao, Kash and Lambrecht’s groups attended and presented their work related to the project
  • July 2018
    • Our paper “Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes” was accepted for publication in Journal of Applied Physics
    • Our paper “LPCVD growth of wide bandgap semiconductor In2O3 films” was accepted for publication in ACS Crystal Growth & Design
    • Our collaborative paper with Prof. Feng’s group (CWRU) “β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection” was accepted for publication in IEEE Electron Device Letters
  • May 2018
    • Our collaborative paper with Prof. Brillson’s group (OSU) “Optical Signatures of Deep Level Defects in Ga2O3” was accepted for publication in Applied Physics Letters
    • Prof. Zhao gave a talk “LPCVD of β-Ga2O3 and In2O3” (Cross Cutting Session: Energy Conversion and Storage) at the 2018 OSU Materials Week
  • Apr. 2018
    • Our paper “ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration” was published in ECS Journal of Solid State Science and Technology
  • Feb. 2018
    • Our collaborative paper with Dr. Selim Elhadj’s team (Lawrence Livermore National Laboratory) “Lifetime laser damage performance of β-Ga2O3 for high power applications” was accepted for publication in APL Materials
    • Editor’s Picks and Featured Articles at APL Materials
  • Jan. 2018
    • Our collaborative paper with Prof. Lussem’s group (Kent State U.) “Tuning charge carrier transport and optical birefringence in liquid-crystalline thin films: A new design space for organic light-emitting diodes” was accepted for publication in Scientific Reports
    • Our paper “LPCVD Homoepitaxy of Si Doped β-Ga2O3 Thin Films on (010) and (001) Substrates” was accepted for publication in Applied Physics Letters
    • Our collaborative paper with Prof. Rajan’s group “LPCVD grown β-Ga2O3 Bevel Field-plated Schottky Barrier Diodes” was accepted for publication in APEX
  • Dec. 2017 – Congratulations to Subrina Rafique for her successful Ph.D. dissertation defense! Subrina will join Intel.
  • Nov. 2017 – Our collaborative paper with Prof. Feng’s group (CWRU) “Free-Standing β-Ga2O3 Thin Diaphragms” was accepted for publication in Journal of Electronic Materials
  • Nov. 2017 – Our collaborative paper with Prof. Feng’s group (CWRU) “Ultra-Wide-Bandgap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion” was accepted for publication in ACS Applied Materials & Interfaces
  • Nov. 2017 – Our paper “Towards High-Mobility Heteroepitaxial β-Ga2O3 on Sapphire – Dependence of the Substrate off-axis Angle was accepted for publication in Phys. Status Solidi A
  • Oct. 2017 – Prof. Zhao was appointed as an associate editor for Applied Physics Letters
  • Oct. 2017 – Prof. Zhao gave an invited talk at the 232th ECS Meeting, National Harbor, Maryland
  • Oct. 2017 – Our group’s lab space in Caldwell Lab 307/311 finished renovation. Ready to move in!
  • Sep. 2017 – Prof. Zhao gave a Physics Department Seminar at Purdue University
  • Sep. 2017 – Dual-chamber MOCVD system was delivered to OSU Nanotech West Laboratory
  • Aug. 2017 – Our research group moved to OSU
  • Jul. 2017 – Our group’s first Ph.D. graduate Dr. Lu Han joined Intel