Electronic Band Structure of 2D Materials and Heterostructures

 


arpesdata

In the last decade we have witnessed exploration and expansion to 2D materials beyond graphene like hexagonal boron nitride (hBN), transition metal dichalcogenides (WS2, MoS2), Ga (In) monochalcogenides (GeSe, InS), etc. The electronic properties of 2D materials are of great interest as they can be tuned with number of layers, underlying substrate and adatoms. Furthermore using assembly techniques, it is possible to stack layer-by-layer two (or more) different 2D materials like Legos to make heterostructures with unprecedented electronic and spin-related properties. Angle resolved photoemission spectroscopy (ARPES) is a powerful technique to measure the electronic band structure of materials, as it directly resolves the energy-momentum space (See associated methods for more details). In collaboration with MASTERO Beamline 7.0.2, at Advanced Light Source, Berkeley we are exploring the effect of exotic substrates and in-situ evaporated adatoms on the electronic properties of 2D materials and heterostructures, using the spatially resolved photoemission techniques, x-ray photoemission electron microscopy (XPEEM) and ARPES.


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