Spin-orbit torque is one of the most promising approaches for spintronic memory and logic systems. It provides an extremely efficient conversion of charge current to spin current in a ferromagnet/nonmagnet bilayer, either through bulk spin Hall effect or interface-driven Rashba-Edelstein effect. This spin current, in turn, produces a spin torque to switch the magnetization of the ferromagnetic layer (i.e. data bit). Reducing the critical current for magnetization switching is the primary research challenge for low power spintronic applications. Our approach is to use MBE and magneto-optical techniques (continuous wave and pump-probe) to understand the role of interface, bulk, and atomic-scale structure on the spin torque and resulting dynamics of switching, ultimately leading to low power, high speed switching.
| Science | Epitaxial Growth … | Spin-Orbit Torque in Magnetic Multilayers