Publications

Peer Reviewed Journal Publications:

  1. Hao Xue, Kamal Hussain, Vishank Talesara, Towhidur Razzak, Mikhail Gaevski, Shahab Mollah, Siddharth Rajan, Asif Khan and Wu Lu, High  Current  Density  Enhancement  Mode  Ultrawide  Bandgap  AlGaN  Channel  Metal-Insulator-Semiconductor  Heterojunction-Field-Effect-Transistors  with  a  Threshold  Voltage of 5 V, PSS Rapid Research Letters, vol. 15, 2000576, (2021). doi: 10.1002/pssr.202000576
  2. Paul Bertani and Wu Lu, Cyanobacterial Toxin Biosensors for Environmental Monitoring and Protection, Medicine in Novel Technology and Devices, vol. 10, 100059, (2021). doi:10.1016/j.medntd.2021.100059
  3. Junao Cheng, Hao Yang, Nicholas G. Combs, Wangzhou Wu, Honggyu Kim, Hareesh Chandrasekar, Caiyu Wang, Siddharth Rajan, Susanne Stemmer, and Wu Lu, Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors, Appl. Phys. Lett. 118, 042105 (2021); https://doi.org/10.1063/5.0022550
  4. Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Shahadat Hasan Sohel, Siddharth Rajan, Asif Khan, Wu Lu, Small signal analysis of ultra-wide bandgap Al0.7Ga0.3N channel MESFETs, Microelectronic Engineering 237 (2021) 111495. https://doi.org/10.1016/j.mee.2020.111495
  5. Paul Bertani, Yuji Wang, Hao Xue, Yi Wei, Wu Lu, Low frequency electrochemical noise in AlGaN/GaN field effect transistor biosensors, Applied Physics Letters 117 (4), 043702, 2020.
  6. Hao Xue, Kamal Hussain, Towhidur Razzak, Mikhail Gaevski, Shahadat Hasan Sohel, Shahab Mollah, Vishank Talesara, Asif Khan, Siddharth Rajan, and Wu Lu, Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm, IEEE Electron Device Letters, 41 (5), 677-680 (2020).
  7. Junao Cheng, Caiyu Wang, Chris Freeze, Omor Shoron, Nick Combs, Hao Yang, Nidhin Kurian Kalarickal, Zhanbo Xia, Susanne Stemmer, Siddharth Rajan, and Wu Lu, IEEE Electron Device Letters, 41 (4), 621-624 (2020).
  8. Vishank Talesara, Diang Xing, Xiangxiang Fang, Lixing Fu, Ye Shao, Jin Wang, Wu Lu, Dynamic Switching of SiC Power MOSFETs Based on Analytical Sub-Circuit Model. IEEE Transactions on Power Electronics, vol. 35 (9), 9682-9691 (2020).
  9. (editor’s pick) Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain, Choong Hee Lee, Abdullah Mamun, Hao Xue, Zhanbo Xia, Shahadat H. Sohel, Mohammad Wahidur Rahman, Sanyam Bajaj, Caiyu Wang, Wu Lu, Asif Khan, and Siddharth Rajan, BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm, Applied Physics Letters, 116, 023507 (2020).
  10. Junao Cheng, Hao Yang, Caiyu Wang, Nick Combs, Chris Freeze, Omor Shoron, Wangzhou Wu, Nidhin Kurian Kalarickal, Hareesh Chandrasekar, Susanne Stemmer, Siddharth Rajan, and Wu Lu, Nanoscale etching of perovskite oxides for field effect transistor applications JVST-B, vol. 38, 012201 (2020).
  11. Shahadat H. Sohel, Mohammad Wahidur Rahman, Andy Xie, Edward Beam, Yongjie Cui, Mark Kruzich, Hao Xue, Towhidur Razzak, Sanyam Bajaj, Yu Cao,Wu Lu, and Siddharth Rajan, Linearity Improvement With AlGaN Polarization-Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation, EEE Electron Device Letters, 41 (11), 19-22 (2020).
  12. Zhaogang Yang, Junfeng Shi, Jing Xie, Yifan Wang, Jingyao Sun, Tongzheng Liu, Yarong Zhao, Xiuting Zhao, Xinmei Wang, Yifan Ma, Veysi Malkoc, Chiling Chiang, Weiye Deng, Yuanxin Chen, Yuan Fu, Kwang J Kwak, Yamin Fan, Chen Kang, Changcheng Yin, June Rhee, Paul Bertani, Jose Otero, Wu Lu, Kyuson Yun, Andrew S Lee, Wen Jiang, Lesheng Teng, Betty YS Kim, L James Lee, Large-scale generation of functional mRNA-encapsulating exosomes via cellular nanoporation, Nature Biomedical Engineering, vol. 4, 69-83, 2020.
  13. Shahadat H Sohel, Andy Xie, Edward Beam, Hao Xue, Towhidur Razzak, Sanyam Bajaj, Sherry Campbell, Donald White, Kenneth Wills, Yu Cao, Wu Lu, Siddharth Rajan, Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors, Applied Physics Express, vol. 13, 036502 (2020).
  14. Xue Hao, Seongmo Hwang, Towhidur Razzak, Choonghee Lee, Gabriel Calderon Ortiz, Zhanbo, Xia, Shahadat Hasan Sohel, Jinwoo Hwang, Siddharth Rajan, Asif Khan, Wu Lu, All MOCVD grown Al0. 7Ga0. 3N/Al0. 5Ga0. 5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors, Solid State Electronics, 164, 107696 (2019).
  15. Hareesh Chandrasekar, Junao Cheng, Tianshi Wang, Zhanbo Xia, Nicholas G. Combs, Christopher R. Freeze, Patrick B. Marshall, Joe McGlone, Aaron Arehart, Steven Ringel, Anderson Janotti, Susanne Stemmer, Wu Lu and Siddharth Rajan, “Velocity Saturation in La-doped BaSnO3 Thin Films”, Applied Physics Letters, 115, 092102 (2019); https://doi.org/10.1063/1.5097791.
  16. (Featured article) Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Hao Xue, Shahadat H. Sohel, Sanyam Bajaj, Yuewei Zhang, Wu Lu, Asif Khan and Siddharth Rajan, Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors, Applied Physics Letters, 115, 043502 (2019); doi: 10.1063/1.5108529
  17. Zhanbo Xia, Hao Xue, Chandan Joishi, Joe Mcglone, Nidhin Kurian Kalarickal, Shahadat H Sohel, Mark Brenner, Aaron Arehart, Steven Ringel, Saurabh Lodha, Wu Lu, Siddharth Rajan, “β-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz”, IEEE Electron Device Letters, vol. 40, pp. 1052-1055 (2019).
  18. Hao Xue, Choong Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, and Wu Lu, Al75Ga0.25N/Al0.6Ga0.4N Heterojunction Field Effect Transistor with fT of 40 GHz, Applied Physics Express, 2019. DOI:10.7567/1882-0786/ab1cf9
  19. Vishank Talesara, Paul Garman, L. James Lee, Wu Lu, Thermal Management of High-Power Switching Transistors Using Thick CVD-Grown Graphene Nanomaterial, IEEE Trans. Power Electronics, 2019. DOI:10.1109/TPEL.2019.2913272
  20. Hao Yu, Miao Jiang, Yubing Guo, Taras Turiv, Wu Lu, Vishva Ray, Oleg D. Lavrentovich, and Qi-Huo Wei, Plasmonic Metasurfaces with High UV–Vis Transmittance for Photopatterning of Designer Molecular Orientations, Adv. Optical Mater. 2019, 1900117.
  21. Shahadat H. Sohel, Andy Xie, Edward Beam, Hao Xue, Towhidur Razzak, Sanyam Bajaj, Yu Cao, Cathy Lee, Wu Lu, Siddharth Rajan, IEEE Electron Device Letters, DOI: 10.1109/LED.2019.2899100 (2019).
  22. Paul Garman, Hao Yang, Ying-Chieh Yen, Jianfeng Yu, Kwang Joo Kwak, Veysi Malkoc, Vishank V. Talesara, Ly J. Lee, and Wu Lu, SiOC-accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties, PSS Rapid Research Letter, 2019. DOI: 10.1002/pssr.201900017
  23. Paul D. Garman, Jared M. Johnson, Vishank Talesara, Hao Yang, Xinpeng Du, Junjie Pan, Dan Zhang, Jianfeng Yu, Eusebio Cabrera, Ying‐Chieh Yen, Jose Castro, Wu Lu, Ji-Cheng Zhao, Jinwoo Hwang, L. James Lee, Dual Silicon Oxycarbide Accelerated Growth of Well‐Ordered Graphitic Networks for Electronic and Thermal Applications, Advanced Materials Technologies, 2019. DOI: 10.1002/admt.201800324
  24. Paul D. Garman, Jared M. Johnson, Vishank Talesara, Hao Yang, Dan Zhang, Jose Castro, Wu Lu, Jinwoo Hwang, and L. James Lee, Silicon Oxycarbide Accelerated Chemical Vapor Deposition of Graphitic Networks on Ceramic Substrates for Thermal Management Enhancement, ACS Appl. Nano Mater., 2019, 2 (1), pp 452–458. DOI: 10.1021/acsanm.8b01998
  25. Shahadat H Sohel, Andy Xie, Edward Beam, Hao Xue, Jason A Roussos, Towhidur Razzak, Sanyam Bajaj, Yu Cao, David J Meyer, Wu Lu, Siddharth Rajan, X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors, IEEE Electron Device Letters, DOI: 10.1109/LED.2018.2874443 (2018).
  26. (Cover Story) T. Razzak; S. Hwang; A. Coleman; S. Bajaj; H. Xue; Y. Zhang; Z. Jamal-Eddine; S.H. Sohel; W. Lu; A. Khan; S. Rajan, RF operation in graded AlxGa1−xN (x = 0.65 to 0.82) channel transistors, IEE Electronics Letters, DOI: 1049/el.2018.6897 (2018).
  27. Santhakumar Kannappan, Karthikeyan Kaliyappan, HaoYang, Rajesh Kumar Manian, Amaresh Samuthira Pandian, Yun Sung Lee, Jae-Hyung Jang and Wu Lu, Thiolated-Graphene-Based Supercapacitors with High Energy Density and Stable Cycling Performance, Carbon 134, (2018) 326-333.
  28. Jinhai Shao, Jianan Deng, W. Lu, Yifang Chen, Nanofabrication of 80 nm asymmetric T shape gates for GaN HEMTs, Microelectronic Engineering 189 (2018) 6–10.
  29. Kang Li, Yue Hao, Xiaoqi Jin, and Wu Lu, Hydrodynamic electronic fluid instability in GaAs MESFETs at terahertz frequencies, Journal of Physics D: Applied Physics, 51, 035104 (2017).
  30. Sanyam Bajaj, Andrew Allerman, Andrew Armstrong, Towhidur Razzak, Vishank Talesara, Wenyuan Sun, Shahadat H. Sohel, Yuewei Zhang, Wu Lu, Aaron R. Arehart, Fatih Akyol and Siddharth Rajan, High Al-Content AlGaN Transistor with 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm, IEEE Electron Device Letters, DOI: 10.1109/LED.2017.2780221 (2017).
  31. Hao Yang, Santhakumar Kannappan, Amaresh S. Pandian, Jae-Hyung Jang, Yun Sung Lee, Wu Lu, Rapidly Annealed Nanoporous Graphene Materials for Electrochemical Energy Storage, Journal of Materials Chemistry A, vol. 5, 23720-23726 (2017).
  32. Jinhai Shao; Jianan Deng; W. Lu; Yifang Chen; Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch, of Micro/Nanolithography, MEMS, and MOEMS, 16(3), 033508 (2017). doi:10.1117/1.JMM.16.3.033508
  33. Gallego-Perez, D. Pal, S. Ghatak, V. Malkoc, S. Gnyawali, L. Chang, W-C Liao, J. Shi, M. Sinha1, E. Steen, A. Sunyecz, R. Stewart, M. Homsy, W. Lu, S. Khanna, C. Rink, J. Otero, L.J. Lee and C.K. Sen, “Topical Tissue Nano-transfection Mediates Non-viral Stroma Reprogramming and Rescue”, Nature Nanotechnology (2017) vol. 12, 974-911.
  34. Hao Yang, Santhakumar Kannappan, Amaresh S. Pandian, Jae-Hyung Jang, Yun Sung Lee, Wu Lu, Achieving Both High Power and Energy Density in Electrochemical Supercapacitors with Nanoporous Graphene Materials, Nanotechnology, vol. 28, 445401 (2017).
  35. Lingqian Chang, Lei Li, Junfeng Shi, Yan Sheng, Wu Lu, Daniel Gallego-Perez, Ly James Lee, Micro-/nanoscale electroporation, Lab on a Chip, vol. 16, 4047-4062, (2016).
  36. Daniel Gallego-Perez, Lingqian Chang, Junfeng Shi, Junyu Ma, Sung-Hak Kim, Xi Zhao, Veysi Malkoc, Xinmei Wang, Mutsuko Minata, Kwang Joo Kwak, Yun Wu, Gregory Lafyatis, Wu Lu, Derek J Hansford, Ichiro Nakano, Ly James Lee, On-chip clonal analysis of glioma stem cell motility and therapy resistance, Nano Letters, vol. 16, pp. 5326 – 5332 (2016).
  37. (Cover story) Lingqian Chang, Daniel Gallego‐Perez, Chi‐Ling Chiang, Paul Bertani, Tairong Kuang, Yan Sheng, Feng Chen, Zhou Chen, Junfeng Shi, Hao Yang, Xiaomeng Huang, Veysi Malkoc, Wu Lu, Ly James Lee, Controllable Large Scale Transfection of Primary Mammalian Cardiomyocytes on a Nanochannel Array Platform, Small, vol. 12, 5971-5980, (2016).
  38. (Cover Story) Chang, P. Bertani,D. Gallego-Perez, Z. Yang, F. Chen, C. Chiang, V. Malkoc, T. Kuang,  K. Gao, L. J. Lee,  and W. Lu, “3D Nanochannel Electroporation for High-throughput Cell Transfection with High Uniformity and Dosage Control”, Nanoscale, vol. 8, 243-252 (2016).
  39. Paul Bertani, Wu Lu, Lingqian Chang, Daniel Gallego-Perez, Ly James Lee, Chiling Chiang, Natarajan Muthusamy, Bosch etching for the creation of a 3D nanoelectroporation system for high throughput gene delivery, Journal of Vacuum Science & Technology B 33 (6), 06F903 (2015).
  40. J Shao, J Liu, J Li, S Zhang, BR Lu, W Lu, Y Chen, Nanofabrication of air-spaced field-plate gates with ultra-short footprint, Microelectronic Engineering 143, 11-14 (2015).
  41. J Shao, S Zhang, J Liu, BR Lu, N Taksatorn, W Lu, Y Chen, Y shape gate formation in single layer of ZEP520A using 3D electron beam lithography, Microelectronic Engineering 143, 37-40 (2015).
  42. Ye Shao and Wu Lu, “Invited: III-Nitride Semiconductor Nanowire Resonant Tunneling Diodes”, ECS Transactions, vol. 66, (2015).
  43. Lingqian Chang, Daniel Gallego-Perez, Xi Zhao, Paul Bertani, Zhaogang Yang, Chi-Ling Chiang, Veysi Malkoc, Junfeng Shi, Chandan K. Sen, Lynn Odonnell, Jianhua Yu, Wu Lu, and L. James Lee, “Dielectrophoresis-assisted 3D nanoelectroporation for non-viral cell transfection in adoptive immunotherapy”, Lab on a Chip, vol.15, 3147 – 3153 (2015).
  44. Hao Yang; Santhakumar Kannappan; Amaresh Pandian; Jae-Hyung Jang; Yun Sung Lee; Wu Lu, “Nanoporous Graphene Materials by Low-temperature Vacuum-assisted Thermal Process for Electrochemical Energy Storage,” Journal of Power Sources, vol. 284, 146-153 (2015).
  45. Lingqian Chang, Marci Howdyshell, Wei-Ching Liao, Chi-Ling Chiang, Daniel Gallego-Perez, Zhaogang Yang, Wu Lu, John C. Byrd, Natarajan Muthusamy, L. James. Lee, Ratnasingham Sooryakumar, “Magnetic Tweezers-based 3D Microchannel Electroporation for Efficient Cell Manipulation and High-Throughput Gene Transfection”, Small, vol. 11, 1818-1828 (2015).
  46. Jinhai Shao, Sichao Zhang, Jianpeng Liu, Yaqi Ma, Bing-Rui Lu, Yan Sun, W. Lu, Nit Taksatorn, Yifang Chen, “Evaluations of KOH solution as an effective developer for chemical amplified resist UVIII”, Microelectronic Engineering, vol. 130, 24-27 (2014).
  47. (Cover Story) Ye Shao, Jongwon Yoon, Hyeongnam Kim, Takhee Lee, and Wu Lu, “Analysis of surface states in ZnO nanowire field effect transistors”, Applied Surface Science, vol. 301, pp. 2-8, 2014.
  48. Ye Shao, Jongwon Yoon, Hyeongnam Kim, Takhee Lee, and Wu Lu, “Electron Transport of Schottky Barrier ZnO Nanowire Field Effect Transistors”, IEEE Trans. Electron Dev., vol. 61, pp. 625-630, 2014.
  49. Yuji Wang, Xuejin Wen, Patricia Casal, Hyeongnam Kim, Stephen C. Lee, and Wu Lu, “Planar field effect transistor biosensors: toward single molecule detection and clinical applications”, ECS Transactions, vol. 61, pp. 139-146, 2014.
  50. Ye Shao, Santino D. Carnevale, A.T.M. G. Sarwar, Roberto C. Myers, Wu Lu, “Growth and Fabrication of GaN/AlN double barrier nanowire resonant tunneling diodes”, J. Vac. Sci. Technol. B. vol. 31, 06FA03, 2013.
  51. Huang, J. Yu, K. J. Kwak, D. Gallego-Perez, W.C. Liao, H. Yang, X. Ouyang, L. Li, W. Lu, P. Lafyatis, and L. J. Lee, “Atomic Carbide Bonding Leading to Superior Graphene Networks,” Advanced Materials, vol. 33, pp. 4668 – 4672, (2013).
  52. Se-I Oh, Godeuni Choi, Hyunsang Hwang, Wu Lu, and Jae-Hyung Jang, “Hydrogenated IGZO Thin Film Transistors Using High Pressure Hydrogen Annealing,” IEEE Trans. Electron Devices, vol. 60, no.8, pp. 2537 – 2541, (2013). DOI 1109/TED.2013.2265326.
  53. Wen, S. Wang, Y. Wang, L. J. Lee, and W. Lu*, “AlGaN/GaN Heterostructure Field Transistor for Label-Free Detection of DNA Hybridization,” Chinese Science Bulletin, vol. 58, pp. 2601 – 2605, (2013).
  54. R. Laskar, L. Ma, K. Santhakumar, P. S. Park, S. Krishnamoothy, D. N. Nath, W. Lu*, Y. Wu, and S. Rajan, “Large area single crystal (0001) oriented MoS2,” Applied Physics Letters, vol. 102, 252108, (2013).
  55. A Theiss, Y Wang, P Casal, S Lee, G Hadley, J Von Visger, W Lu, L Brillson, “Immunologically Modified FETs for Protein Detection in Biologic Fluids,” American Journal of Transplantation, vol. 13 (S5), 228 (2013).
  56. Kim, D. Nath, S. Rajan, W. Lu*, “Polarization-engineered Ga-face GaN-based Heterostructures for Normally-off Heterostructure Field-effect Transistors,” Journal of Electronic Materials, vol. 42, pp. 10 – 14, (2013). DOI: 10.1007/s11664-012-2109-3.
  57. Bertani, X. Wen, and W. Lu*, “Surface Functionalization of Hydrogen-Terminated Si for Biosensing Applications,” Journal of Electronic Materials, vol. 41, no. 5, pp. 830-836, DOI: 10.1007/s11664-012-1996-7 (2012).
  58. Casal, X.Wen, S. Gupta, T. Nicholson III, Y. Wang, A. Theiss, B. Bhushan, L. Brillson, W. Lu*, and S.C. Lee, “ImmunoFET feasibility in physiological salt Environments,” Phil. Trans. R. Soc. A 370, 2474–2488 (2012).
  59. Casal, N. Singh, X. Wen, T. Nicholson, A. Theiss, L. Brillson, W. Lu, Y. Wang, G. Hadley, R. Pelletier, S. Lee, “Application of ImmunoFET Technology to Detection of Proteins in Tissues and Fluids,” American Journal of Transplantation, vol. 12 (S3), pp. 395-396, (2012).
  60. Pouyan E. Boukany, Andrew Morss, Wei-ching Liao, Brian Henslee, Hyun-Chul Jung, Xulang Zhang, Bo Yu, Xinmei Wang, Yun Wu, Lei Li, Keliang Gao, Xin Hu, Xi Zhao, O. Hemminger, Wu Lu, Gregory P. Lafyatis, and L. James Lee, Nanochannel electroporation delivers precise amounts of biomolecules into living cells, Nature Nanotechnology, vol. 6, 747–754 (2011). Note: Highlighted on Nature Methods, NextBigFuture.com, Einsteinlist.com, Kurzweil Accelerating Intelligence News, ResearchGate.net etc.
  61. Xuejin Wen, Samit Gupta, Yuji Wang, Theodore R. Nicholson III, Stephen C. Lee, and Wu Lu*, High Sensitivity AlGaN/GaN Field Effect Transistor Protein Sensors Operated in the Subthreshold Regime by a Control Gate Electrode”, Applied Physics Letters, vol. 99, 043701, 2011. Note: This paper was selected for republication in Vir. J. Bio. Phys. Res. / Volume 22 / Issue 3 / INSTRUMENTATION DEVELOPMENT.
  62. Yuji Wang and Wu Lu*, “AlGaN/GaN FET for DNA hybridization detection”, Phys. Status Solidi A, vol. 208, no. 7, pp. 1623-1625 (2011) / DOI 10.1002/pssa.201001090.
  63. Xuejin Wen, Samit Gupta, Theodore R. Nicholson III, Stephen C. Lee, and Wu Lu*, “AlGaN/GaN HFET biosensors working at subthreshold regime for sensitivity enhancement,” Phys. Status Solidi C, vol. 8, 7-8, pp. 2489 – 2491 (2011) / DOI 10.1002/pssc.201001174.
  64. Hyeongnam Kim, Michael L. Schuette, and Wu Lu*, Edge effects on gate capacitance, threshold voltage, and low field mobility in AlGaN/GaN HEMTs, Status Solidi C, vol. 8, no. 7-8, pp. 2448 – 2450 (2011) / DOI 10.1002/pssc.201001078.
  65. Hyeongnam Kim, Michael L. Schuette, and Wu Lu*, “Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors,” Journal of Vacuum Science and Technology B, vol. 29, no. 3, pp. 031204-031204-5, 2011.
  66. Xuejin Wen, M.L. Schuette, Samit Gupta, Theodore R. Nicholson III, Stephen C. Lee, and Wu Lu*, Improved Sensitivity of AlGaN/GaN Field Effect Transistor Biosensors by Optimized Surface Functionalization. IEEE Sensors Journal, vol. 11, no. 8, pp. 1726 – 1735, 2011.
  67. (Featured article)H. Wong, D.F. Brown, M.L. Schuette, H. Kim, V. Balasubramanian, W. Lu, J.S. Speck and U.K. Mishra, “X-band power performance of N-face GaN MIS-HEMTs”, Electronics Letters, vol. 47 (3), pp. 214-215, 2011.
  68. Samit K. Gupta, Hao-Hsuan Wu, Kwang J. Kwak, Patricia Casal, Theodore R. Nicholson III, Xuejin Wen, R. Anisha, Bharat Bhushan, Paul R. Berger, Wu Lu, Leonard J. Brillson, Stephen Craig Lee, Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces. Journal of Physics D: Applied Physics, 2011, 44 (3) 034010-1-12.
  69. C. Lee, S. Gupta, T. Nicholson, X. Wen, W. Lu, L.J. Brillson, G. Hadley, “Tools for Determining Content of Specific Pro-Inflammatory Protein Analytes in Tissue,” American Journal of Transplantation, vol. 11,pp. 233-234,  (2011).
  70. Kwang Joo Kwak, Gintaras Valincius, Wei-Ching Liao, Xin Hu, Xuejin Wen, Andrew Lee, Bo Yu, David J. Vanderah, Wu Lu, and L. James Lee, “Formation and Finite Element Analysis of Tethered Bilayer Lipid Structures”, Langmuir, 2010, 26 (23), pp 18199–18208.
  71. R. Nicholson III, S.G., X. Wen, H-H. Wu, R. Anisha, P. Casal, K. J. Kwak, B. Bhushan, P. R. Berger, and L.J. Brillson, W. Lu, and S. C. Lee, Rational enhancement of nanobiotechnological device functions illustrated by partial optimization of a protein-sensing field effect transistor. Proceedings of IMechE – Part N: Journal of Nanoengineering and Nanosystems, 223 (3-4), pp. 149-163, (2009). Note: This paper is the most highly downloaded paper published in JNN in 2010.
  72. Bhuwan Joshi, Xuejin Wen, Kai Sun, Wu Lu*, and Qi-Huo Wei, Fabrication and characterization of coupled metal-dielectric-metal nanoantennas, Journal of Vacuum Science and Technology B, vol. 28 (6), pp. C6O21-C6O25, 2010.
  73. Hyeongnam Kim and Wu Lu*, “Analysis of Trapping Effects in AlGaN/GaN HEMTs Based on Near Zero Bias Output Conductance”, Phys. Stat. Sol. (c), Volume 7, Issue 7-8, pages 2004–2006, July 2010.
  74. Junghui Song and Wu Lu*, “Hydrogen sensing performance dependence on catalytic metal thickness of Pt/AlGaN/GaN Schottky diodes”, Phys. Stat.  Sol. (c), Volume 7, Issue 7-8, pages 1838–1840, July 2010.
  75. Schuette and Wu Lu*, “Simple technique for beam focusing in electron beam lithography on optically transparent substrates,” Journal of Vacuum Science and Technology B, vol. 27, pp. 2512-2615, 2009.
  76. J. Zhao, Z.J. Lin, T.D. Corrigan, Y Zhang, Y.J. Lue, W. Lu, Z.G. Wang, H. Chen, “Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures”, Chinese Physics B, vol. 18, pp. 3980-3984, 2009.
  77. A. Ricciardo, A.J. Hauser, F.Y. Yang, H. Kim, W. Lu, P.M. Woodward, “Structural, magnetic, and electronic characterization of double perovskites BixLa2_xMnMO6 (M = Ni, Co; x = 0.25, 0.50),” Materials Research Bulletin, vol. 44, pp. 239-247, 2009.
  78. Allen Y. Yi, Wu Lu, Dave F. Farson, L. James Lee, “Overview of polymer micro/nanomanufacturing for biomedical application”, Advances in Polymer Technology, vol. 27, pp. 188-198, 2008.
  79. Junghui Song, Wu Lu*, “Operation of Pt/AlGaN/GaN Heterojunction Field-Effect-Transistor Hydrogen Sensors with Low Detection Limit and High Sensitivity,” IEEE Electron Device Letters, vol. 29, pp. 1193-1195, 2008.
  80. Samit Gupta, Mark Elias, Xuejin Wen, John Shapiro, Leonard Brillson, Wu Lu, and Stephen Lee, “Detection of clinically relevant levels of biological analyte under physiologic buffer using planar field effect transistors”, Biosensors and Bioelectronics, vol. 24, pp. 505-511, 2008.
  81. J. Lin, J.Z. Zhao, T.D. Corrigan, Z. Wang, Z.D. You, Z.G. Wang, W. Lu*, “The influence of Schottky contact metals on the strain of AlGaN barrier layers”, Journal of Applied Physics, vol. 103, pp.044503, 2008.
  82. Junghui Song and Wu Lu*, “Thermodynamic and Kinetic Analysis of Hydrogen Sensing in Pt/AlGaN/GaN Schottky Diodes at High Temperatures”, IEEE Sensors Journal, vol. 8, pp.903-909, 2008.
  83. Michael Schuette and Wu Lu*, Highly-selective zero-bias plasma etching of GaN over AlGaN, Journal of Vacuum Science Technology B, vol. 25, pp. 1870-1874, 2007.
  84. Hyeongnam Kim, Michael L. Schuette, Jaesun Lee, Wu Lu*, and James C. Mabon, “Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing”, Journal of Electronic Materials, vol. 36, pp. 1149-1155, 2007.
  85. Dongmin Liu, Mantu Hudait, Yong Lin, Hyeongnam Kim, Steven A. Ringel, and Wu Lu* “Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs,” Solid State Electronics, vol. 51, pp. 838-841, 2007.
  86. Mike Schuette and Wu Lu*, “Electrical transport in the copper germanide-n-GaN system: Experiment and numerical model”, Journal of Applied Physics, vol. 101, 113702-1-6, 2007.
  87. Michael L. Schuette and Wu Lu*, “Compositional study of copper-germanium ohmic contact to n-GaN”, Journal of Electronic Materials, vol. 36, pp. 420-425, 2007.
  88. Dongmin Liu, Jaesun Lee, and Wu Lu*, “The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs”, Solid State Electronics, vol. 51, pp. 68-71, 2007.
  89. Hyeongnam Kim, Michael L. Schue­tte, Hyunchul Jung, Junghui Song, Jaesun Lee, Wu Lu*, and James C. Mabon, “Passivation Effects in Ni/AlGaN/GaN Schottky Diodes by Annealing”, Applied Physics Letters, vol. 89, pp. 053516-1 – 053516-3, 2006.
  90. Hyun-Chul Jung, Wu Lu*, Shengnian Wang, L. James Lee, and Xin Hu, “Etching of Pyrex Glass Substrates by ICP-RIE for Micro/Nanofluidic Devices”, Journal of Vacuum Science Technology B, vol. 24, 3162-3164, Dec. 2006.
  91. Junghui Song and Wu Lu*, “Chemically-Gated AlGaN/GaN Heterostructure Field Effect Transistors for Polar Liquid Sensing”, Applied Physics Letters, vol. 89, 223503-1 – 223503-3, Nov. 2006.
  92. Dongmin Liu, Mantu Hudait, Yong Lin, Hyeongnam Kim, Steven A. Ringel, and Wu Lu*, “InGaAs/InAsP composite channel high electron mobility transistors,” Electronics Letters, vol. 42, pp. 307-309, 2006.
  93. Zhaojun Lin and Wu Lu*, “Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures,” Journal of Applied Physics, vol. 99, pp.014504-1 – 014503-3, 2006.
  94. Michael Schuette and Wu Lu*, “Copper germanide Ohmic contact on n-type gallium nitride using silicon tetrachloride plasma,” Journal of Vacuum Science Technology B, vol. 23, pp. 3143-3147, 2005.
  95. Yong Yang, Ly James Lee, and Wu Lu*, “Subcritical carbon dioxide assisted polymer nanofabrication at low temperatures,” Journal of Vacuum Science Technology B, vol. 23, pp. 3202-3204, 2005. Note: This article was selected for re-publication in Virtual Journal of Nanoscale Science & Technology, vol. 12 issue 25 Advances in Fabrication and Processing.
  96. Kim, J. Lee, W. Lu*, “Gate current leakage and breakdown mechanism in unpassivated AlGaN/GaN high electron mobility transistors by post-gate annealing,” Applied Physics Letters, vol. 86, 143505-1 to 143505-3, April 4, 2005.
  97. Dongmin Liu, Jaesun Lee, and Wu Lu*, “Temperature-dependent microwave noise performance of AlGaN/GaN HEMTs with post-gate annealing,” Phys. Stat. Sol. (c), vol. 2, no.7, pp. 2659-2662, 2005.
  98. Kim, J. Lee, W. Lu*, “Post-annealing effects on trapping behaviors in AlGaN/GaN HEMTs,” Phys. Stat. Sol. (a), vol. 202, no. 5, pp. 841-845, 2005.
  99. Junghui Song, Wu Lu*, Jeffrey S. Flynn, and George R. Brandes, “Pt-AlGaN/GaN Schottky Diodes Operated at 800 ºC for Hydrogen Sensing”, Applied Physics Letters, vol. 87, pp. 133501-1 to 133501-3, 2005.
  100. Junghui Song, Wu Lu*, Jeffrey S. Flynn, and George R. Brandes, “AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals”, Solid State Electronics, vol. 49, pp. 1330-1334, 2005.
  101. Jaesun Lee, Dongmin Liu, Hyeongnam Kim, Michael L. Schuette, Wu Lu*, Jeffrey S. Flynn, and Georege R. Brandes, “Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors,” International Journal of High Speed Electronics and Systems, vol. 14, no. 3, pp. 805-809, (2004).
  102. Hyeongnam Kim, Jaesun Lee, and Wu Lu*, “Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing,” International Journal of High Speed Electronics and Systems, vol. 14, no. 3, pp. 769-774, (2004).
  103. Jaesun Lee, Dongmin Liu, Hyeongnam Kim, Michael L. Shuette, Wu Lu*, Jeffrey S. Flynn, and Georege R. Brandes “Self-Aligned AlGaN/GaN High Electron Mobility Transistors”, Electronics Letters, vol. 40, pp. 1227-1228, 2004.
  104. Lin, H. Kim, J. Lee, and W. Lu*, “Thermal Stability of Schottky Contacts on Strained AlGaN/GaN Heterostructures”, Applied Physics Letters, vol. 84, pp. 1585-1587, 2004.
  105. Lee, D. Liu, and W. Lu*, “Post Annealing Effects on Device Performance of AlGaN/GaN HFETs”, Solid State Electronics, vol. 48, pp. 1855-1859, 2004.
  106. Jaesun Lee, Dongmin Liu, Hyeongnam Kim, and Wu Lu*, “Post-Processing annealing Effects on Direct Current and Microwave Performance of AlGaN/GaN High Electron Mobility Transistors”, Applied Physics Letters, vol. 85, pp. 2631-2633, 2004.
  107. Lin, W. Lu*, J. Lee, D. Liu, “Influence of annealed ohmic contact metals on the polarization of A1GaN barrier layer”, Electronics Letters, vol. 39, pp.1412-1414, Sept. 18, 2003.
  108. Lee, D. Liu, Z. Lin, W. Lu*, J. S. Flynn, and G. R. Brandes, “Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate”, Solid State Electronics, vol.47, pp. 2081-2084, November 2003.
  109. W. Lu*, V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise performance of AlGaN/GaN field effect transistors dependence of aluminum concentration,” IEEE Trans. Electron Devices, vol. 50, pp. 1069-1074, April, 2003.
  110. Z. Lin, W. Lu*, J. Lee, D. Liu, and G. R. Brandes, “Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: determination and effect of metal work functions,” Appl. Phys. Lett., vol. 82, pp. 4364 – 4366, June 2003.
  111. W. Lu*, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, A comparative study of surface passivation on AlGaN/GaN HEMTs, Solid State Electronics 46, (2002) 1441-1444.
  112. C. Lee, W. Lu, E. Piner, and I. Adesida, DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE, Solid State Electronics 46, (2002) 743-746.
  113. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, “AlGaN/GaN high electron mobility transistors on SiC with fT of over 120 GHz,” IEEE Electron Device Lett., vol. 23, pp. 455-457, 2002.
  114. V. Kumar, W. Lu, F.A. Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, High performance 0.25 m gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm, Electronics Lett. 38, (2002) 252-253.
  115. S.L. Rommel, J. H. Jang, W. Lu, G. Cueva, L. Zhou, I. Adesida, G. Pajer, R. Whaley, A. Lepore, Z. Schellanbarger, and J. H. Abeles, “The Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma-reactive ion etching chemistries for photonic device fabrication,” J. Vac. Sci. Technol. B, vol. 20, pp. 1327-1330, 2002.
  116. W. Lu, R. Schwindt, V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise performances of AlGaN/GaN HEMT’s on sapphire substrates,” IEEE Trans. Microw. Theory Tech., vol. 49, pp. 2499 – 2504, 2002.
  117. V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, and I. Adesida, 0.25 m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT, Electronics Lett. 37, (2001) 858-859.
  118. W. Lu, J. W. Yang, M. Asif Khan, and I. Adesida, AlGaN/GaN HEMT’s on SiC with over 100 GHz fT and low microwave noise, IEEE Trans. Electron Devices, 48, (2001) 581-585.
  119. V. Kumar, W. Lu, F.A. Khan, R. Schwindt, E. Piner, and I. Adesida, Recessed 0.25 m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE, Electronics Lett. 37, (2001) 1483-1485.
  120. W. Lu, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths, J. Vac. Sci. Technol. B, 18 (2000) 3488-3492.
  121. W. Lu, A. Kuliev, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, High performance 0.1 m gate-length p-type SiGe MODFETs and MOS-MODFETs, IEEE Trans. Electron Devices, 47, (2000) 1645-1652.
  122. W. Lu, X.W. Wang, R. Hammond, A. Kuliev, S. Koester, J.O. Chu, K. Ismail, T.P. Ma, and I. Adesida, p-type SiGe transistors with low gate leakage using SiN gate dielectric, IEEE Electron Dev. Lett., 20, (1999) 514-516.
  123. W. Lu, K. Prasad, G. I. Ng, J. H. Lee, and P. Lindstrom, Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room temperature photoluminescence spectra, J. Phys. D: Appl. Phys. 31, (1998) 159-164.
  124. W. Lu, G. I. Ng, B. Jogai, J. H. Lee, and C. S. Park, Identification of room temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells, J. Appl. Phys. 82, (1997) 1345-1349.
  125. W. Lu, N. Gu, Y. Wei, and Y.C. Tian, Ultrathin resist patterning by a synchrotron radiation lithography system, Vacuum, 48, (1997) 103-105.
  126. W. Lu, J. H. Lee, H. S. Yoon, C. S. Park, K. E. Pyun, H. G. Lee, K. S. Suh, B. Jogai, Room temperature photoluminescence studies of delta-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures, Solid State Comm. 99, (1996) 713-716.
  127. W. Lu, H.Y. Shen, N. Gu, J.H. Lee, C.S. Park, and Y. Wei, Fabrication and microwave response of YBaCuO superconductive thin film nanobridges, Jpn. J. Appl. Phys., 34 (1995) L1644-L1646.
  128. N. Gu, X.M. Yang, H.Y. Shen, W. Lu, and Y. Wei, Electrical switch properties of CuTCNQ organic crystals with nanometer feature size, Synthetic Metals, 71 (1995) 2221-2222.
  129. N. Gu, W. Lu, and Y. Wei, Nanometer-sized passageways within CuTCNQ crystalline grains prepared by spontaneous electrolyses, Chin. Sci. Bulletin, 40 (1995) 962-966.
  130. X. M. Yang, N. Gu, W. Lu, Z.H. Lu, and Y. Wei, Structure study of polymethylmethacrylate Langmuir-Blodgett monolayers by atom force microscopy, Chin. Sci. Bulletin, 40 (1995) 145-149.
  131. W. Lu, N. Gu, Z.H. Lu, X.M. Yang, and Y. Wei, Langmuir-Blodgett resist films for microlithography by exposure to a scanning electron microscope, Thin Solid Films, 242 (1994) 178-182.
  132. W. Lu, H.Y. Shen, N. Gu, C.W. Yuan, Z.H. Lu, and Y. Wei, Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield, Thin Solid Films, 243 (1994) 501-504.
  133. W. Lu, N. Gu, Z.H. Lu, and Y. Wei, An investigation of the backscattering yield of Langmuir-Blodgett resist films in electron beam lithography, Modeling Simul. Mater. Sci. Eng., 2 (1994) 913-920.
  134. N. Gu, W. Lu, S.M. Pang, C.W. Yuan, and Y. Wei, Photovoltaic effect in CuTCNQ organic thin films, Thin Solid Films, 243 (1994) 468-471.
  135. W. Lu, J.X. Tao, N. Gu, Comment: “Proximity effect correction data processing system for electron beam lithography”, J. Vac. Sci. Technol. B, 11(1993) 1906-1907.
  136. Z. H. Lu, J.Y. Fang, N. Gu, W. Lu, Y. Wei, and P. Stroeve, Monolayer compressed by steady laminar flowing subphase, J. Colloid Interface Sci., 156 (1993) 462-466.
  137. Ning Gu, Xiao-min Yang, Wu Lu, Zu-hong Lu, Yu Wei, AFM studies on poly(methyl methacrylate) Langmuir-Blodgett monolayers, Acta Polymerica Sinica, vol. 1(1): 88-92, (1995). (in Chinese).
  138. W. Lu, N. Gu, Z.H. Lu, and Y. Wei, Monte Carlo simulation of electron beam scattering trajectories in LB resists and substrates and the superiorities of LB resists from back-scattered yield, J. Appl. Sci., 13 (1995) 31-36 (in Chinese).
  139. N. Gu, X.M. Yang, W. Lu, Z.H. Lu, and Y. Wei, A study of long chain single-axis orientation of PI molecules in PI LB films by AFM, J. Appl. Sci., 13 (1995) 229-134 (in Chinese).
  140. W. Lu, N. Gu, Y. Wei, Polymethylmethacrylate Langmuir-Blodgett films for high resolution electron beam resists, J. Electronics, 11 (1994) 247-252.
  141. W. Lu, N. Gu, Z.H. Lu, and Y. Wei, Electron beam scattering trajectories in LB resist films: a Monte Carlo simulation, Chin. J. Comput. Phys., 11 (1994) 297-302.
  142. Ning Gu, Haoying Shen, Wu Lu, Yu Wei, Cathodoluminescence Images of Met. (Cu, Ag)-TCNQ Anion Radical Salts Organic Thin Films, Acta Physico-Chimica Sinica, Volume: 10    Issue: 11     1040-1044, 1994.
  143. W. Lu, N. Gu, Z. H. Lu, Y. Wei, H.Y. Shen, and L. Zhang, Nanometer lithography by SEM electron beams, J. Southeast Univ., No. 1, 24 (1994) 117-119 (in Chinese).
  144. W. Lu, N. Gu, and Y. Wei, Polymethylmethacrylate Langmuir-Blodgett films for high resolution electron beam resists, J. Electronics, 16 (1994) 660-663 (in Chinese).
  145. N. Gu, W. Lu, and Z.H. Lu, Review of electron beam nanolithography, J. Southeast Univ., 24 No.2 (1994) 95-102 (in Chinese).
  146. N. Gu, G.W. Min, and W. Lu, Review of nanofabrication by STM, Advanced Technol. Electr. Eng. & Energy, No.2 (1994) 18-23 (in Chinese).
  147. X. M. Yang, N. Gu, W. Lu, Z.H. Lu, and Y. Wei, Investigation of monolayer polymethylmethacrylate microstructure by atom force microscopy, Chin. Sci. Bulletin, 39 (1994) 653-655 (in Chinese).
  148. N. Gu, W. Lu, Z.H. Lu, and H.Y. Shen, Single electron devices, Research & Progress of SSE, 14 (1994) 197-204 (in Chinese).
  149. N. Gu, W. Lu, and Y. Wei, A way of alternate deposition with self-growth of CuTCNQ organic thin films and the infrared spectrum of this prepared films, J. Southeast University, 24, Suppl. (1994) 33-36 (in Chinese).
  150. N. Gu, W. Lu, Z.H. Lu, and Y. Wei, Ultrathin polymethylmethacrylate LB films for X-ray high resolution lithography, High Technol. Comm., No.6 (1993) 18-21 (in Chinese)
  151. N. Gu, W. Lu, and Z.H. Lu, Resolution Limitation in photolithography, J. Southeast Univ., 23, No.6, (1993) 101-105 (in Chinese).
  152. H. Y. Shen, N. Gu, and W. Lu, Observation on the cathodeluminescence image of CuTCNQ, Research & Progress of Solid State Electronics, 13 (1993) 374 (in Chinese).
  153. N. Gu, Z.H. Lu, W. Lu, Q.Y. Hong, F. Qian, Y. Wei, and P. Stroeve, A study of Langmuir-Blodgett (LB) trough for compressing monolayer by steady laminar flowing subphase, Thin Film Sci. Technol., 6 (1993) 307-313 (in Chinese).
  154. H. Y. Shen, J.X. Tao, W. Lu, and N. Gu, Electron beam exposure with high resolution using SEM, Research & Progress of Solid State Electronics, 13 (1993) 274-275 (in Chinese).
  155. N. Gu and W. Lu, Research progress in polymer materials for optical disc substrates, Mater. Rev., No.6 (1993) 58-63 (in Chinese).
  156. N. Gu and W. Lu, Applications of optical sensitive glasses in microelectronics, Microelectr. Tech., (1993) (in Chinese).
  157. W. Lu and J.F. Mei, A computer controlled paraplegic walking system, Biomedical Electronics, 1 (1991) 104-112.

Book Chapter: 

  1. Hao Yang and Wu Lu, “Graphene‐Based Electrochemical Microsupercapacitors for Miniaturized Energy Storage Applications,” Chapter 8 in “Nanomaterials for Sustainable Energy” (Q. Li ed.) Springer ISSN 1434-4904, pp. 271-291 (2016).
  2. Paul Bertani and Wu Lu, “Hybrid Organic-Nitride Semiconductor Nanostructures for Biosensor Applications,” in “Functional Organic and Hybrid Nanostructured Materials”, Chapter 13, pp.485-518, Wiley-VCH, (2018)

Invited talks (Colloquia, Seminars, plenary & Invited Conference talks): 

  1. Wu Lu, Graphene Supercapacitors with both High Energy Density and Power Density: The Science behind the Performance, The 10th international conference in the series of the Solid State Surfaces and Interfaces (SSSI), Slovakia 2018.
  2. Wu Lu, Graphene Supercapacitors with both High Energy Density and Power Density: The Science behind the PerformanceChongqing Institutes of Green and Intelligent Technology (CIGIT) of Chinese Academy of Sciences (CAS), 2018.
  3. Wu Lu, Cell Nano-Electroporation: Toward High Throughput and in vivo Applications, International Symposium on Cell Informatics, Nanjing China 2018.
  4. Hao Yu, Yubing Guo, Miao Jiang, Vishva Ray, Wu Lu, Oleg D. Lavrentovich, Qi-Huo Wei, Plasmonic Metamasks with High UV-Vis Transmission for Photopatterning Complex Molecular Orientations, The 5th International Conference on Frontiers of Plasmonics (FOP5), Nanjing China, 2018.
  5. Wu Lu, BioFET sensors for detection of toxins in water, Ohio sea grant workshop, Toledo, OH 2017
  6. Wu Lu, Graphene Supercapacitor with Both High Power and Energy Density, International Conference on Functional Nanomaterials and Nanodevices 2017, Budapest, Hungary
  7. Wu Lu, 3D Nanochannel Electroporation for High-throughput Cell Transfection with High Uniformity and Dosage Control, International Conference on Functional Nanomaterials and Nanodevices 2017, Budapest, Hungary
  8. Wu Lu, Plenary talk, Graphene Supercapacitors: Achieving Both High   Energy   Density   and   Power Density, Solid State Surfaces and Interfaces conference, SSSI (2016).
  9. Wu Lu (plenary), 2015 International Workshop on Detection and Analysis of Single Cell Blood Cancer Cells, Nanjing, China, November 2015.
  10. Wu Lu, GaN/AlN Double Barrier Nanowires Resonant Tunneling Diode with High Tunneling Current Density and Peak-to-Valley Current Ratio, ECS Spring 2015.
  11. Wu Lu, BioFET Sensors: Physics, Materials, and Applications, Xidian University 2015.
  12. Wu Lu, “GaN Field Effect Transistor Biosensors: Toward Single Molecular Detection and Clinical Applications”, Electrochemical Society (ECS) Spring Meeting 2014.
  13. Wu Lu, “BioFET Sensors: Physics, Materials, and Applications”, International Workshop on Biomedical Engineering (BME 2014), Nanjing China.
  14. Wu Lu, “GaN field effect transistors: design, processing, and characterization,” Fudan University, 6/2014.
  15. Wu Lu, “GaN field effect transistors: design, processing, and characterization,” Xidian University, 7/24/2013.
  16. Wu Lu, “III-nitride Semiconductor Nanowire Resonant Tunneling Diodes,” 7th International Conference on Materials for Advanced Technologies (IC-MAT), Singapore, July 1 ~ 5, 2013.
  17. Santhakumar, K. Karthikeyan, M. Rajesh, S. Amaresh, Hao Yang, Yun-Sung Lee, and Wu Lu, “Reduced graphene oxide based electrode materials for supercapacitor applications,” 6th International Symposium on Macro- and Supermolecular Architectures and Materials, Special Theme: Nano Systems and Applications, Coimbatore, India, November 21-25, 2012.
  18. Wu Lu, “GaN Immuno-FETs for Protein Detection,” 2012 International Conference and Exhibition on Biosensors and Bioelectronics, May 14-16, 2012 Las Vegas, NV, USA.
  19. Hyun-Chul Jung, Brian Henslee, L. James Lee, and Wu Lu, “Cell micro/nano electroporation for drug/gene delivery,” 4th WCU International Symposium on Nanobio Materials and Electronics, May 4-7, 2011, Munster, Germany.
  20. Wu Lu (plenary), “SoC/SiP: “more Moore” or “more than Moore”” 2011 Korean Conference of Semiconductors, Jeju Island, Korea, February 2011
  21. Wu Lu, “Micro/Nanoelectroporation: Give Cells a Shot Using Electricity,” International Conference on Nano Science and Nano Technology2011, Sunchon, Jeonnam, Korea, November 10 ~ 11, 2011.
  22. Wu Lu, “Electrical Field Transistor Based Biosensors for Protein Detection,” The 7th International Workshop on Semiconductor Surface Passivation, Krakow, Poland, September 11-15, 2011.
  23. Wu Lu, “Functionalization of III-Nitrde Semiconductors for Biological Sensing,” 5th International WCU Symposium on Nano- and Meso-scopic Material Science and Chemistry, Tokyo, Japan, November 11-12, 2011.
  24. Wu Lu, Functionalization of III-nitride semiconductors for chemical and biological sensing applications, Semiconductor Surface Chemistry Workshop, Telluride, Colorado, 2010.
  25. Wu Lu, III-Nitride Heterojunction Field Effect Transistors for Biological Sensing, Semiconducor Research Cooperation (SRC) Project Review Meeting, 2010.
  26. Wu Lu, III-Nitride Based Field Effect Devices: from High Frequency FETs to Chem/Bio Sensors, TriQuint Semiconductor Inc., 2010.
  27. Yuji Wang and Wu Lu, AlGaN/GaN FET for DNA hybridization detection, 2010 International Workshop on Nitride Semiconductors, Tampa, Florida 2010.
  28. Wu Lu, “III-Nitride Semiconductor Field Effect Devices for Chemical and Biosensing Applications”, the 21st International Conference on Molecular Electronics and Devices, Suncheon, Korea, 2010
  29. Wu Lu, “Near-Ideal Sub-Threshold Characteristics of AlGaN/GaN HEMTs, 12th International Symposium on Microwave and Optical Technology, New Delhi, India, 2009.
  30. Wu Lu, “Pt/AlGaN/GaN Heterostructure Devices for Hydrogen Sensor Applications with High Thermal Stability and Sensing Performances,” The 6th International Workshop on Semiconductor Surface Passivation, Zakopane, Poland 2009.
  31. Wu Lu, “Electroporation Devices with Micropore Arrays for Drug/Gene Delivery,” 2009 International Conference on Nano Science and Nano Technology, Mokpo, Korea, 2009.
  32. Wu Lu, From Semiconductor Devices to Biosensors: An Overview of Research Activities at OSU HSDC and BSBE Labs, Southeast University, 2008.
  33. Wu Lu, From Semiconductor Devices to Biosensors: An Overview of Research Activities at OSU HSDC and BSBE Labs, Ping Ding Shan Institute of Technology, 2008.
  34. Wu Lu, “Nanofabrication and Biosensors”, Symposium on Bioelectronics and Learning Science, Nanjing China, December, 2008.
  35. Wu Lu, “GaN-based chemical and biological sensors,” Advanced Heterojunction Naostructures Workshop, Big Island, Hawaii, December, 2008.
  36. Wu Lu, GaN-based biosensors, Southeast University, 2007.
  37. Wu Lu, Micro/nano-lithography and reactive ion etching: processes, micro/nano structures, and devices, Department of Chemical and Biomolecular Engineering, The Ohio State University, 2007.
  38. Wu Lu, “Surface Functionalization of III-Nitride Semiconductors for Biosensor Applications,” 2007 International Workshop on Semiconductor Surface Passivation.
  39. Dongmin Liu, Mantu Hudait, Yong Lin, Hyeongnam Kim, Steven A. Ringel, and Wu Lu, “0.25 μm InAlAs/InGaAs/InAsP composite channel HEMTs with an fT of 115 GHz,” 17th Asia-Pacific Microwave Conference, Suzhou, China, 2005.
  40. Michael L. Schuette and Wu Lu, “Low-temperature copper germanide ohmic contact to n-GaN and AlGaN/GaN heterostructures by ion bombardment,” 31st International Conference on Micro- and Nano-Engineering (MNE), Vienna, Austria, 2005.
  41. Wu Lu, “Post-Gate Annealing of AlGaN/GaN Heterojunction Field Effect Transistors,” IV International Workshop on Semiconductor Surface Passivation (SSP), Ustron, Poland, 2005.
  42. Wu Lu, “Microwave Noise Performance of AlGaN/GaN HFETs”, International Conference on Materials and Advanced Technologies (IC-MAT), Singapore, 2005
  43. Wu Lu, AlGaN/GaN Heterostructure Devices for Chemical and Biological Sensing, Institute for Infocomm Research, Singapore, 2005.
  44. Wu Lu, Electron beam lithography and reactive ion etching: from micro/nanostructures to devices, Department of Material Science and Engineering, The Ohio State University, 2005.
  45. Wu Lu, AlGaN/GaN Heterostructure Devices for Chemical and Biological Sensing, Southeast University, China, 2005.
  46. Wu Lu, Microwave Noise Performance of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs), Nanjing Electron Devices Institute, China, 2005.
  47. Wu Lu, “Device performance enhancement of AlGaN/GaN HFETs by post-Schottky annealing,” 16th Asia-Pacific Microwave Conference, New Delhi, India, December, 2004.
  48. Wu Lu, Thermal stability of Schottky contacts on AlGaN/GaN heterostructures and its device applications, Center for Materials Research, The Ohio State University, November, 2003.
  49. Wu Lu, High Performance AlGaN/GaN heterojunction field effect transistors, The Ohio State University, 2001.
  50. Wu Lu, Fabrication and characterization of AlGaN/GaN heterojunction field effect transistors, University of Wisconsin at Madison, 2001.
  51. Wu Lu, P-type SiGe MODFETs and MOS-MODFETs, IBM T. J. Watson Research Center, 2001.
  52. Wu Lu, Fabrication and characterization of GaN-based field effect transistors for low noise and power applications, TriQuint Semiconductor Inc., 2001.
  53. Adesida, W. Lu, V. Kumar, AlGaN/GaN for low noise applications, 6th International Conference on Solid-State and Integrated-Circuit Technology, Shanghai, Oct. 22-25, 2001.
  54. Wu Lu, Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors, University of Wisconsin at Madison, 2000.