Publications

[2019] [2018] [2017] [2016]  [2015]  [2014]  [2013]  [2012]  [2011]  [Before 2011]


2019

  • [J74] A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H. –L. Huang, J. Hwang, H. Zhao, “MOCVD epitaxy of β-(AlxGa1-x)2O3 thin films on (010) Ga2O3 substrates and N-type doping”, Appl. Phys. Lett., 115, 120602 (2019).  (Editor’s Pick)
  • [J73] MR Karim, BHD Jayatunga, Z Feng, K Kash, H Zhao, “MOCVD growth of ZnGeN2 films on sapphire”, Crystal Growth & Design, 19, 8, 4661-4666, 2019
  • [J72] Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao, “MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties”, Applied Physics Letters , 114 (25), 250601, 2019. (Featured Article)
  • [J71] Y Zhang, MR Karim, Z Feng, H Zhao, “Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition”, Journal of Applied Physics,125 (13), 135703, 2019.
  • [J70] MR Karim, Z Feng, JM Johnson, M Zhu, J Hwang, H Zhao, “Low-Pressure Chemical Vapor Deposition of In2O3 Films on Off-Axis c-Sapphire Substrates”, Crystal Growth & Design 19 (3), 1965-1972, 2019.
  • [J69] Z. Feng, M. Rezaul Karim, H. Zhao, “Low Pressure Chemical Vapor Deposition of β-Ga2O3 thin films: dependence on growth parameters”, APL Materials, 7, 022514, 2019. [pdf]

2018

  • [J68] M. Rezaul Karim, H. Zhao, “Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes” J. Appl. Phys., 124, 034303, 2018. [pdf] Highlighted at Semiconductor Today: http://www.semiconductor-today.com/news_items/2018/aug/osu_020818.shtml
  • [J67] A. T. Neal, S. Mou, S. Rafique, H. Zhao, E. Ahmadi, J. S. Speck, K. T. Stevens, J. D. Blevins, D. B. Thomson, N. Moser, K. D. Chabak, G. H. Jessen, “Donors and Acceptors in β-Ga2O3”, Appl. Phys. Letts., 113, 062101, 2018. [pdf]
  • [J66] M. Karim, Z. Feng, H. Zhao, “Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films”, Cryst. Growth Des., 18 (8), pp. 4495–4502, 2018. [pdf]
  • [J65] X. -Q. Zeng, J. Lee, S. Rafique, M. Rezaul Karim, L. Han, H. Zhao, C. A. Zorman, P. Feng, “β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection”, IEEE Electron Device Letters, 39 (8),1230-1233, 2018. [pdf]
  • [J64] H. Gao, S. Muralidharan, N. Pronin, M. Karim, S. M. White, T. Asel, G. Foster, S. Krishnatmoorthy, S. Rajan, L. R. Cao, M. Higashiwaki, H. von Wenckstern, M. Grundmann, H. Zhao, D. C. Look, L. J. Brillson, “Optical Signature of deep level defects in Ga2O3”, Appl. Phys. Letts., 112, 242102, 2018. [pdf]
  • [J63] Z. Feng, S. Rafique, Y. Cai, L. Han, M.-C. Huang, H. Zhao, “ZnO nanowall networks for sensor devices: from hydrothermal synthesis to device demonstration”, ECS J. Solid State, 7(7), Q3114-Q3119, 2018. [pdf]
  • [J62] J.-H. Yoo, S. Rafique, A. Lange, H. Zhao, S. Elhadj, “Lifetime laser damage performance of β-Ga2O3 for high power applications”, APL Materials, 6, 036105, 2018. [pdf] Editor’s Picks and Featured Articles at APL Materials
  • [J61] S. Rafique, M. Rezaul Karim, J. M. Johnson, J. Hwang, H. Zhao, “LPCVD Homoepitaxy of Si Doped β-Ga2O3 Thin Films on (010) and (001) Substrates”, Appl. Phys. Letts., 112, 052104, 2018. [pdf]
  • [J60] C. Joishi, S. Rafique, Z. Xia, L. Han, S. Krishnamoorthy, Y. Zhang, S. Lodha, H. Zhao, S. Rajan, “Low-pressure CVD-grown β-Ga2O3 Bevel-Field-plated Schottky Barrier Diodes “, Appl. Phys. Express, 11, 031101, 2018. [pdf]
  • [J59] C.-M. Keum, S. Liu, A. Al-Shadeedi, V. Kaphle, M. K. Callens, L. Han, K. Neyts, H. Zhao, S. D. Bunge, R. Twieg, A. Jakli, and B. Lüssem, “Tuning charge carrier transport and optical birefringence in liquid-crystalline thin films: A new design space for organic light-emitting diodes”, Scientific Reports, 8(1), 699, 2018. [pdf]
  • [J58] X.-Q. Zheng, J. Lee, S. Rafique, L. Han, C. A. Zorman, H. Zhao, P. X.-L. Feng, “Free-Standing β-Ga2O3 Thin Diaphragms”, Journal of Electronic Materials, 47(2), pp. 973-981, 2018. [pdf]
  • [J57] S. Rafique, L. Han, A. T. Neal, S. Mou, H. Zhao, “Towards High-Mobility Heteroepitaxial β-Ga2O3 on Sapphire – Dependence of the Substrate off-axis Angle”, Phys. Status Solidi A. 215(2), 1700467, 2018. [pdf]
  • [C90]  (Invited Conference Paper) K. Kash, W. R. L. Lambrecht, H. Zhao, “Heterovalent Ternary Nitride Semiconductors for Optoelectronics and Solar Energy”, 2018 MRS Spring Meeting -Novel Inorganic Semiconductors for Optoelectronics and Solar Energy, Phoenix, Arizona, April 2018.

2017

  • [J56] X. -Q. Zheng, J. Lee, S. Rafique, L. Han, C. A. Zorman, H. Zhao, P. X. -L. Feng, “Ultra-Wide-Bandgap β-Ga2O3 Nanomechanical Resonantors with Spatially Visualized Multimode Motions”, ACS Appl. Maters. & Interfaces,  9 (49), pp. 43090–43097, 2017. [pdf]
  • [J55] S. Rafique, L. Han, S. Mou, H. Zhao, “Temperature and Doping Concentration Dependence of Energy Bandgap in β-Ga2O3 Thin Films Grown on Sapphire”, Opt. Mater. Exp.,7(10), pp. 3561-3570, 2017. [pdf]
  • [J54] S. Rafique, L. Han, H. Zhao, “Thermal Annealing Effect on β-Ga2O3 Thin Film Solar Blind Photodetector Heteroepitaxially Grown on Sapphire Substrate”, Phys. Status Solidi A, 214, No. 8, 1700063, 2017. DOI: 10.1002/pssa.201700063. [pdf]
  • [J53] L. Han, C. Lieberman, H. Zhao, “ Electron-Photon and Electron-LO Phonon Scattering Rates in Closely-Lattice-Matched GaN-ZnGeN2 Coupled Quantum Wells ”, J. Appl. Phys., Vol. 121, 093101, 2017.  [pdf]
  • [J52] S. Rafique, L. Han, J. Lee, X. Zheng, C. A. Zorman, P. X.-L.Feng, H. Zhao, “ Synthesis of Ga2O3 Nanosheet on 3C-SiC-on-Si by Low Pressure Chemical Vapor Deposition ”, J. Vac. Sci. Technol. B, Vol. 35, 011208, 2017. [pdf]
  • [C89] (Invited Conference Paper) H. Zhao, S. Rafique, L. Han, “Growth and Characterization of Ultrawide Bandgap β-Ga2O3 Thin Films”, 232th ECS Meeting-GaN and SiC Power Technologies 7, National Harbor, Maryland, October 2017.
  • [C88] X. Zheng, J. Lee, S. Rafique, L. Han, C. A. Zorman, H. Zhao, P. X.-L. Feng, “Ultra-Wide Bandgap β-Ga2O3 Nanomechanical Resonators”, International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington DC, Sep. 2017.
  • [C87] X. Zheng, J. Lee, S. Rafique, L. Han, C. A. Zorman, H. Zhao, P. X.-L. Feng, “Very Thin Suspended β-Ga2O3 Nano Diaphragms for Mechanical Resonator and Ultraviolet Sensing Applications”, the 59th Electronic Materials Conference (EMC 2017), South Bend, IN, June 2017.
  • [C86] S. Rafique, L. Han, J. R. Grgat, H. Zhao, “N-type β-Ga2O3 Thin Films Grown via Low Pressure Chemical Vapor Deposition”, the 59th Electronic Materials Conference (EMC 2017), South Bend, IN, June 2017.
  • [C85] J. R. Grgat, L. Han, H. Zhao, “ Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN-ZnGeN2 Quatum Wells Light-Emitting Diodes ”, CLEO 2017, Quantum Confined Materials & Devices, San Jose, CA, May 2017.
  • [C84] S. Rafique, L. Han, H. Zhao, “ Ultra-wide Bandgap beta-Ga2O3 for Deep-UV Solar Blind Photodetectors ”, SPIE Photonics West 2017, Gallium Nitride Materials and Devices XII, San Francisco, CA, Feb. 2017.
  • [C83] H. Zhao, L. Han, “Novel Device Designs Enabled by Lattice-Matched GaN-ZnGeN2 Heterostructures”, SPIE Photonics West 2017, Oxide-based Materials and Devices VIII, San Francisco, CA, Feb. 2017.
  • [C82] X. Zheng, J. Lee, S. Rafique, L. Han, C. Z. Zorman, H. Zhao, and P. X.-L. Feng, “Wide Bandgap β-Ga2O3 Nanomechnical Resonators for Detection of Middle-Ultraviolet (MUV) Photon Radiation”, IEEE MEMS 2017 Conference, Las Vegas, Jan. 2017.

2016

  • [J51] S. Rafique, L. Han, A. T. Neal, S. Mou, M. J. Tadjer, R. H. French, H. Zhao, “ Heteroepitaxial of N-type β-Ga2O3 Thin Films on Sapphire Substrate by Low Pressure Chemical Vapor Deposition ”, Appl. Phys. Letts., Vol. 109, 132103, 2016. [pdf]
  • [J50] L. Han, H. Zhao, “ Designs of Blue and Green Light-Emitting Diodes based on Type-II InGaN-ZnGeN2 Quantum Wells ”, J. Appl. Phys., Vol. 120, 103102, 2016. [pdf]
  • [J49] L. Han, H. Zhao, “ Interfacial Structure Designs with Impedance-Matching for Ideal Broadband Antireflections ”, J. Appl. Phys., Vol. 119, 243103, 2016. [pdf]
  • [J48] S. Rafique*, L. Han*, M. J. Tadjer, J. A. Freitas Jr., N. Mahadik, H. Zhao, “ Homoepitaxial Growth of β-Ga2O3 Thin Films by Low Pressure Chemical Vapor Deposition ”, Appl. Phys. Letts., Vol. 108, 182105, 2016.(*Equally Contributed First Authorship) [pdf]
  • [J47] S. Rafique*, L. Han*, H. Zhao, “ Growth and Electrical Properties of Free-Standing Zinc Oxide Nanomembranes ”, Crystal Growth & Design, Vol. 16(3), pp.1654-1661, 2016.(*Equally Contributed First Authorship) [pdf]
  • [J46] S. Rafique, L. Han, H. Zhao, “ Synthesis of wide bandgap Ga2O3 (Eg ∼4.6 – 4.7 eV) thin films on sapphire by low pressure chemical vapor deposition ”, physica status solidi (a), Vol. 213(4), pp. 1002-1009, 2016. [pdf]
  • [J45] S. Rafique*, L. Han*, C. A. Zorman, H. Zhao, “ Synthesis of wide bandgap ß-Ga2O3 rods on 3C-SiC-on-Si ”, Crystal Growth & Design, Vol. 16(1), pp.511-517, 2016. (*Equally Contributed First Authorship) [pdf]
  • [C81] X. Zheng*, S. Rafique*, J. Lee, L. Han, C. Z. Zorman, H. Zhao, and P. X.-L. Feng, “Wide Bandgap ß-Ga2O3 Nanomechnical Resonators ”, the AVS 63rd International Symposium and Exhibition, Nashville, TN, November 2016.
  • [C80] L. Han, C. Lieberman and H. Zhao, “Electron-photon and electron-LO phonon intersubband scattering rates in lattice-matched GaN-ZnGeN2 coupled quantum wells ”, the International Workshop on Nitride Semiconductors, Orlando, FL, October 2016.
  • [C79] (Late News) S. Rafique, L. Han, M. J. Tadjer and H. Zhao, “Synthesis of ß-Ga2O3 Thin Films by Low Pressure Chemical Vapor Deposition ”, the 58th Electronic Materials Conference, Newark, DE, June 2016.

2015

  • [J44] P. C. Quayle, E. W. Blanton, A. Punya, G. T. Junno, K. He, L. Han, H. Zhao, J. Shan, W. R. Lambrecht, K. Kash, “Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule”, Phys. Rev. B, Vol. 91, 205207 (2015). [pdf]
  • [J43] S. Rafique, L. Han, and H. Zhao, “Density Controlled Growth of ZnO Nanowall-Nanowire 3D Networks”, ACS J. Phys. Chem. C, Vol. 119(21), pp.12023-12029 (2015). [pdf]
  • [J42] L. Han, R. H. French and H. Zhao, “Surface Antireflection and Light Extraction Properties of GaN Microdomes”, IEEE Photonics Journal, Vol. 7, Issue 2 6100109 (2015). [pdf]
  • [J41] S. Rafique, L. Han, and H. Zhao, “Chemical Vapor Deposition of m-plane and c-plane InN Nanowires on Si (100) Substrate”, J. Crys. Growth, Vol. 415, pp. 78-83 (2015). [pdf]
  • [C78] (Late News) S. Rafique, L. Han, J. Zhou and H. Zhao, “Synthesis and Control of 3D Nano-Networks: 1D ZnO Nanowires Embedded in 2D Nanowalls”, the 57th Electronic Materials Conference, Columbus, OH, June 2015.

2014

  • [J40] L. Han, and H. Zhao, “Surface Antireflection Properties of GaN Nanostructures with Various Effective Refractive Index Profiles”, Optics Express, Vol. 22, Issue 26, pp. 31907-31916 (2014). [pdf]
  • [J39] L. Han, and H. Zhao, “Simulation Analysis of GaN microdomes with broadband omnidirectional antireflection for concentrator photovoltaics”, J. Appl. Phys., Vol. 115, Issue 13, 133102 (2014). [pdf]
  • [C78] L. Han, and H. Zhao, “Surface Antireflection Studies of GaN Nanostructures with Various Effective Refractive Index Profiles”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2014, San Francisco, CA, Jun. 2014.
  • [C77] L. Han, K. Kash, and H. Zhao, “High Efficiency Light-Emitting Diodes based on InGaN-ZnGeN2 Type-II Quantum Wells”, in Proc. of the SPIE Photonics West 2014, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, San Francisco, CA, Feb. 2014.

2013

  • [J38] L. Han, T. A. Piedimonte, and H. Zhao, “Experimental exploration of the fabrication of GaN microdome arrays based on a self-assembled approach”, Optical Materials Express, Vol. 3, Issue 8, 1093-1100, July 2013. [pdf]
  • [J37] H. Zhao, X. Jiao, N. Tansu, “Analysis of Interdiffused InGaN Quantum Wells for Visible Light-Emitting Diodes”, J. Disp. Technol. vol. 9, no. 4, pp. 199-206, April 2013. DOI: 10.1109/JDT.2013.2250480. [pdf]
  • [J36] H. Zhao, G. Liu, J. Zhang, R. A. Arif, N. Tansu, “Analysis of Internal Quantum Efficiency and Current Injection Efficiency in Nitride Light-Emitting Diodes,” J. Disp. Technol. vol. 9, no. 4, pp. 212-225, April 2013. DOI: 10.1109/JDT.2013.2250252. [pdf]
  • [J35] G. Sun, R. Chen, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, “Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells”, IEEE J. Selected Topics in Quantum Electronics, Vol. 19, No. 1, 8400106, January-February 2013. [pdf]
  • [J34] G. Xu, G. Sun, Y. J. Ding, H. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of Large Stark Shifts in InGaN / GaN Multiple Quantum Wells”, J. Appl. Phys., vol. 113, Art. 033104, January 2013. [pdf]
  • [C76] (Tutorial Conference Paper) N. Tansu, J. Zhang, G. Y. Liu, H. Zhao, C. K. Tan, and P. F. Zhu, “Internal and External Efficiency in InGaN-Based Light-Emitting Diodes,” Proc. of the Asian Communications and Photonics (ACP) Conference 2013, Beijing, China, November 2013.
  • [C75] (Invited Conference Paper) H. Zhao, L. Han, T. A. Piedimonte, “III-nitride Micro-domes for High Efficiency Light-Emitting Diodes and Concentrator Photovoltaics”, in Proc. of the Asia Communications and Photonics Conference (ACP) 2013, Beijing, China, November 2013.
  • [C74] (Invited Conference Paper) H. Zhao, L. Han, T. A. Piedimonte, “Micro-domes for High Efficiency Light-Emitting Diodes”, in Proc. of the 13th International Meeting on Information Display (iMiD-2013), Daegu, South Korea, August 2013.
  • [C73] G. Sun, R. Chen, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, “Complementing Trends of Photoluminescence and Terahertz Intensities in Staggered InGaN Quantum Wells”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2013, San Francisco, CA, June 2013.
  • [C72] L. Han, T. A. Piedimonte, M. R. McGoogan, I. V. Kidd, R. H. French, and H. Zhao, “Simulations and Experiments of Tunable GaN Microdomes for Broadband Omnidirectional Antireflection”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2013, San Francisco, CA, June 2013.
  • [C71] L. Han, M. R. McGoogan, T. A. Piedimonte, I. V. Kidd, R. H. French, H. Zhao, “GaN Micro-Domes for Broadband Omnidirectional Antireflection for Concentrated Photovoltaics”, in Proc. of the SPIE Photonics West 2013, Optoelectronic Materials and Devices, San Francisco, CA, Feb. 2013.
  • [C70] P. Zhao, L. Han, and H. Zhao, “Light Extraction Efficiency Enhancement for InGaN Quantum Wells Light-Emitting Diodes with GaN Micro-Domes”, in Proc. of the SPIE Photonics West 2013, Semiconductor Lasers and LEDs, San Francisco, CA, Feb. 2013.

2012

  • [J33] P. Zhao, L. Han, M. R. McGoogan, and H. Zhao, “Analysis of TM Mode Light Extraction Efficiency Enhancement for Deep Ultraviolet AlGaN Quantum Wells Light-Emitting Diodes with III-nitride Micro-domes”, Optical Materials Express, Vol. 2, Issue 10, 1397-1406, October 2012. [pdf]
  • [J32] P. Zhao, and H. Zhao, “Analysis of Light Extraction Efficiency Enhancement for Thin-Film-Flip-Chip InGaN Quantum Wells Light-Emitting Diodes with GaN Micro-Domes”, Optics Express, Vol. 20, No. S5, A765-A776, September 2012. [pdf]
  • [J31] G. Liu, J. Zhang, X.-H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic Vapor Phase Epitaxy and Characterizations of Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates”, J. Crys. Growth, Vol. 340 (1), pp. 66-73, February 2012.
    [pdf]
  • [C69] E. Blanton, P. Zhao, K. He, J. Shan, H. Zhao, and K. Kash, “ZnGeN2: The Effects of Growth Conditions on Morphology, Ordering, and Optical Propertiess”, Proc. of the 2012 Materials Research Society (MRS) Fall Meeting, Boston, MA, Nov. 2012.
  • [C68] (Invited Conference Paper) N. Tansu, J. Zhang, G. Liu, H. Zhao, C. K. Tan, and P. F. Zhu, “Physics of High-Efficiency III-Nitride Quantum Wells Light-Emitting Diodes,s” Proc. of the Asian Communications and Photonics (ACP) Conference 2012, Guangzhou, China, Nov. 2012.
  • [C67] H. Zhao, X. Jiao, N. Tansu, “Analysis of Position and Thickness Dependences of Delta Layer in InGaN-Delta-InN Quantum Wells Light-Emitting Diodes”, in Proc. of the ACP 2012, Guangzhou, China, November 2012.
  • [C66] (Conference Keynote Talk) N. Tansu, J. Zhang, G. Liu, C. K. Tan, P. Zhu, H. Zhao, “Physics and Technology of III-Nitride Semiconductors for Energy Efficiency Applications”, ICYRAM 2012, Singapore, July 2012.
  • [C65] X. Jiao, P. Zhao, and H. Zhao, “Analysis of Thermally-Annealed InGaN Quantum Wells for Light-Emitting Diodes ”, in Proc. of the IEEE EnergyTech 2012, Cleveland, OH, May 2012.
  • [C64] P. Zhao, X. Jiao, and H. Zhao, “Analysis of Light Extraction Efficiency Enhancement for InGaN Quantum Wells Light-Emitting Diodes with Microspheres”, in Proc. of the IEEE EnergyTech 2012, Cleveland, OH, May 2012.
  • [C63] G. Sun, R. Chen, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, “Strikingly Different Behaviors of Photoluminescence Intensity and Terahertz Output Power versus Period of InGaN/GaN Quantum Wells”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, CA, May 2012.
  • [C62] P. Zhao, D. Sun, and H. Zhao, “Enhancement of Light Extraction Efficiency for Deep Ultraviolet AlGaN Quantum Wells Light-emitting Diodes with III-nitride Microspheres”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, CA, May 2012.
  • [C61] (Invited Conference Talk) N. Tansu, J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, and H. Zhao, “Advances in III-Nitride Semiconductors for Energy Efficiency Applications”, Proc. of the KAUST-UCSB-NSF Solid State LightingWorkshop 2012, Thuwal, Saudi Arabia, February 2012.
  • [C60] G. Liu, J. D. Poplawsky, J. Zhang, V. Dierolf, H. Zhao, and N. Tansu, “Quantum Efficiency Characterizations of Staggered InGaN Quantum Wells Light-Emitting Diodes by Temperature-Dependent Electroluminescence Measurement”, Proc. of the SPIE Photonics West 2012, LEDs: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, Jan 2012.
  • [C59] J. Zhang, H. Zhao, and N. Tansu, “Engineering of AlGaN-Delta-GaN Quantum Wells Gain Media for Mid- and Deep-Ultraviolet Lasers”, Proc. of the SPIE Photonics West 2012, Novel In-Plane Semiconductor Lasers XI, San Francisco, CA, Jan 2012.
  • [C58] G. Liu, J. Zhang, H. Zhao, and N. Tansu, “Device Characteristics of InGaN Quantum Well Light-Emitting Diodes with AlInN Thin Barrier Insertion”, Proc. of the SPIE Photonics West 2012, Gallium Nitride Materials and Devices VII, San Francisco, CA, Jan 2012.


2011

  • [J30] G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, “Investigation of Fast and Slow Decays in InGaN/GaN Quantum Wells”, Appl. Phys. Lett., vol. 99, Art. 081104, August 2011. [pdf]
  • [J29] (Invited Journal Paper) H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for High Internal Quantum Efficiency Green InGaN Light-Emitting Diodes with Large Overlap Quantum Wells”, Optics Express, 19(S4), A991-A1007, June 2011. [pdf]
  • [J28] G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective Area Epitaxy of Ultra-High Density InGaN Quantum Dots by Diblock Copolymer Lithography”, Nanoscale Res. Lett., vol. 6, Art. 342, April 2011. [pdf]
  • [J27] H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for Nitride Active Regions”, Appl. Phys. Lett., vol. 98, Art. 151115, April 2011. [pdf]
  • [J26] J. Zhang, H. Zhao, and N. Tansu, “Large Optical Gain AlGaN-Delta-GaN Quantum Wells Laser Active Regions in Mid- and Deep-Ultraviolet Spectral Regimes”, Appl. Phys. Lett., vol. 98, Art. 171111, April 2011. [pdf]
  • [J25] G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang and N. Tansu, “Efficient Terahertz Generation from Multiple InGaN/GaN Quantum Wells”, IEEE J. Selected Topics in Quantum Electronics., vol. 17(1), pp. 48-53, January-February 2011. [pdf]
  • [C57] P. Zhao, and H. Zhao, “Enhancement of Field Emission of Carbon Nanotubes Arrays Formed by Self-Assembled Microspheres”, in Proc. of the IEEE International Semiconductor Device Research Symposium (ISDRS) 2011, College Park, MD, December 2011.
  • [C56] (Invited Conference Paper) N. Tansu, J. Zhang and H. Zhao, “Physics of III-Nitride Gain Media for Visible and Deep UV Lasers”, in Proc. of the 24th Annual Meeting of the IEEE Photonics Society, Arlington, VA, October 2011.
  • [C55] H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for Nitride Light-Emitting Diodes”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CWF5, Baltimore, MD, May 2011.
  • [C54] G. Liu, H. Zhao, J. Zhang, and N. Tansu, “Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CMDD6, Baltimore, MD, May 2011.
  • [C53] J. Zhang, H. Zhao, and N. Tansu, “High TE-Polarized Optical Gain from AlGaN-Delta-GaN Quantum Well for Deep UV Lasers”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper JTuD4, Baltimore, MD, May 2011.
  • [C52] G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, N. Tansu, “High-Power Terahertz Generation due to Dipole Radiation within InGaN/GaN Multiple Quantum Wells”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CMM4, Baltimore, MD, May 2011.
  • [C51] G. Xu, G. Sun, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, N. Tansu, “Investigation of Blueshift of Photoluminescence Emission Peak in InGaN/GaN Multiple Quantum Wells”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper JWA70, Baltimore, MD, May 2011.
  • [C50] H. Zhao, J. Zhang, T. Toma, G. Liu, J. D. Poplawsky, V. Dierolf, and N. Tansu, “MOCVD Growths of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes”, in Proc. of the American Physical Society (APS) Annual March Meeting 2011, Dallas, Texas, March 2011.
  • [C49] (Invited Conference Paper) N. Tansu, H. Zhao, J. Zhang, G. Liu, X. H. Li, Y. K. Ee, R. Song, T. Toma, L. Zhao, and G. S. Huang, “Novel Approaches for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes ¨C Device Physics and Epitaxy Engineering”, in Proc. of the SPIE Photonics West 2011, LEDs: Materials, Devices, and Applications for Solid State Lighting XV, Paper 7954-42, San Francisco, CA, January 2011.
  • [C48] H. Zhao, J. Zhang, G. Liu, T. Toma, J. D. Poplawsky, V. Dierolf and N. Tansu, “Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes”, in Proc. of the SPIE Photonics West 2011, Gallium Nitride Materials and Devices VI, San Francisco, CA, January 2011.
  • [C47] J. Zhang, H. Zhao, and N. Tansu, “Gain Characteristics of Deep UV AlGaN Quantum Wells Lasers”, in Proc. of the SPIE Photonics West 2011, Novel In-Plane Semiconductor Lasers X, San Francisco, CA, January 2011.
  • [C46] G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective Area Epitaxy of Ultra-High Density InGaN Based Quantum Dots”, in Proc. of the IEEE / Photonics Society ¨C Winter Topicals 2011, Keystone, CO, January 2011.


 Before 2011

  • [J24] H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current Injection Efficiency Induced Efficiency-Droop in InGaN Quantum Well Light-Emitting Diodes”, Solid-State Electronics, vol. 54 (10), pp. 1119-1124, October 2010. [pdf]
  • [J23] J. Zhang, H. Zhao, and N. Tansu, “Effect of Crystal-Field Split-Off Hole and Heavy-Hole Bands Crossover on Gain Characteristics of High Al-Content AlGaN Quantum Well Lasers”, Appl. Phys. Lett. vol. 97, Art. 111105, September 2010. [pdf]
  • [J22] H. Zhao, G. Y. Liu, and N. Tansu, “Analysis of InGaN Quantum Wells with Delta-InN Layer for Light-Emitting Diodes”, Appl. Phys. Lett., 97 (13), Art. 131114, September 2010. [pdf]
  • [J21] G. Sun, Y. J. Ding, G. Y. Liu, G. S. Huang, H. Zhao, N. Tansu, and J. B. Khurgin, “Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells”, Appl. Phys. Lett., vol. 97(2), Art. No. 021904, July 2010. [pdf]
  • [J20] H. Zhao, and N. Tansu, “Optical Gain Characteristics of Staggered InGaN Quantum Wells Lasers”, J. Appl. Phys., vol.107(11), Art. 113110, June 2010. [pdf]
  • [J19] (Invited Review Article) N. Tansu, H. Zhao, G. Liu, X. H. Li, J. Zhang, H. Tong, and Y. K. Ee, “Breakthrough in Photonics 2009: III-Photonics”, IEEE Photonics Journal, Vol.2, No.2, pp. 236-243, April 2010. [pdf]
  • [J18] G. Xu, Y. J. Ding, H. Zhao, M. Jamil, G. Liu, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblm¨¹ller, and J. S. Speck, “THz Generation from InN Films due to Destructive Interference between Optical Rectification and Photocurrent Surge”, Semiconductor Science and Technology, vol. 25 (1), Art. 015004, January 2010. [pdf]
  • [J17] (Invited Journal Paper) H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and Characteristics of Staggered InGaN Quantum Wells Light-Emitting Diodes in Green Spectra Regime”, IET Optoelectron., vol. 3(6), pp. 283-295, December 2009.  [pdf]
  • [J16] H. Zhao, G. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded-Temperature Profile”, Appl. Phys. Lett., vol. 95(6), Art. 061104, August 2009. [pdf]
  • [J15] Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of Light Extraction Efficiency of III-Nitride Light Emitting Diodes with Self-Assembled Colloidal-based Microlenses”, IEEE J. Selected Topics in Quantum Electronics, vol. 15 (4), pp. 1218-1225, July-August 2009. [pdf]
  • [J14] H. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm”, IEEE J. Selected Topics in Quantum Electronics, vol. 15 (4), pp. 1104-1114, July-August 2009. [pdf]
  • [J13] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light Emitting Diodes”, IEEE J. Quantum Electron., vol. 45(1), pp. 66-78, January 2009. [pdf]
  • [J12] M. Jamil, H. Zhao, J. Higgins, and N. Tansu, “MOVPE and Photoluminescence of Narrow Band Gap (0.77 eV) InN on GaN / Sapphire by Pulsed Growth Mode”, in Physica Stat. Solidi (a), vol. 205(12), pp. 2886-2891, December 2008. [pdf]
  • [J11] M. Jamil, H. Zhao, J. Higgins and N. Tansu, “Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE”, J. Crys. Growth, vol. 310(23), pp. 4947-4953, November 2008. [pdf]
  • [J10] H. Zhao, R. A. Arif, and N. Tansu, “Self Consistent Gain Analysis of Type-II ‘W’ InGaN-GaNAs Quantum Well Lasers”, J. Appl. Phys., 104 (4), Art. 043104, August 2008. [pdf]
  • [J9] R. A. Arif, H. Zhao, Y. K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum Wells Light Emitting Diodes”, IEEE J. Quantum Electron., vol. 44(5-6), pp.573-580, May-June 2008. [pdf]
  • [J8] Y. K. Ee, H. Zhao, R. A. Arif, M. Jamil, and N. Tansu, “Self-Assembled InGaN Quantum Dots on GaN Emitting at 520 nm Grown by Metalorganic Vapor-Phase Epitaxy ,” J. Crys. Growth, vol. 310(7-9), pp.2320-2325, April 2008. [pdf]
  • [J7] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain Analysis of Strain-Compensated InGaN/AlGaN Quantum Well Active Regions for Lasers Emitting at 420-500 nm”, Optical and Quantum Electronics, vol. 40 (5-6), 301-306, April 2008. [pdf]
  • [J6] R. A. Arif, H. Zhao, and N. Tansu, “Type-II InGaN-GaNAs Quantum Wells Active Regions for Lasers Applications”, Appl. Phys. Lett. vol. 92(1), Art. No. 011104, January 2008. [pdf]
  • [J5] Q. Wang, H. Mu, X. Zhang, W. Lei, J. Wang, and H. Zhao, “Field Emitters with Low Turn On Electric Field Based on Carbon Fibers”, Applied Surface Science, 253(14), 5980-5984, 2007. [pdf]
  • [J4] H. Zhao, W. Lei, X. Zhang, X. Li, and Q. Wang. “Simulation of the cathode surface damages in a HOPFED during ion bombardment”, Journal of Vacuum Science & Technology B, 23(6), 3148-3152, Nov. 2005. [pdf]
  • [J3] W. Lei, X. Zhang, X. Zhou, Z. Zhu, C. Lou, and H. Zhao, “Characteristics of a cold cathode electron source combined with secondary electron emission in a FED”, Applied Surface Science, 251, 170-176, 2005. [pdf]
  • [J2] M. Liu, X. Zhang, W. Lei, H. Zhao, and B. Wang, “Transverse energy distribution analysis in a field emission element with an insulator funnel”, Nuclear Instruments and Methods in Physics Research Section B, 234(3), 210-218, 2005. [pdf]
  • [J1] X. Zhong, H. Zhao, W. Lei, X. Zhang, H. Yin, W. van der Poel, D. den Engelsen, “Numerical study of the electron and ion trajectories in HOPFEDs”, Journal of the Society for Information Display, 12(4), 483-488, December 2004. [pdf]
  • [C45] H. Zhao, J. Zhang, T. Toma, G. Y. Liu, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes”, in Proc. of the 23rd Annual Meeting of the IEEE Photonics Society, Paper WY4, Denver, CO, November 2010.
  • [C44] J. Zhang, H. Zhao, and N. Tansu, “Gain and Spontaneous Emission Characteristics of High Al-Content AlGaN Quantum Well Lasers”, in Proc. of the 23rd Annual Meeting of the IEEE Photonics Society, Paper MI4, Denver, CO, November 2010.
  • [C43] G. Liu, H. Zhao, J. Zhang, H. Tong, G. S. Huang, and N. Tansu, “Growths of Lattice-Matched AlInN / GaN for Optoelectronics Applications”, in Proc. of the 23rd Annual Meeting of the IEEE Photonics Society, Paper WY5, Denver, CO, November 2010.
  • [C42] (Invited Conference Paper) N. Tansu, H. Zhao, J. Zhang, G. Y. Liu, X. H. Li, H. Tong, T. Toma, G. S. Huang, and Y. K. Ee, “ Device Physics and Epitaxy Engineering for High-Efficiency III-Nitride Light-Emitting Diodes”, in Proc. of the International Union of Materials Research Societies – International Conference on Electronic Materials (IUMRS-ICEM) 2010, Seoul, Korea, August 2010.
  • [C41] G. Sun, S. K. Tripathy, Y. Ding, G. Liu, G. S. Huang, H. Zhao, N. Tansu, and J. B. Khurgin, “Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May 2010.
  • [C40] G. Sun, S. K. Tripathy, Y. Ding, G. Liu, H. Zhao, G. S. Huang, N. Tansu, and J. B. Khurgin, “Photoluminescence Quenching due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells”, in Proc. of the OSA/APS Quantum Electronics and Laser Sciences (QELS) 2010, San Jose, CA, May 2010.
  • [C39] G. Liu, H. Zhao, J. H. Park, L. J. Mawst, and N. Tansu, “Growths of Ultra High Density InGaN-Based Quantum Dots on Self-Assembled Diblock Copolymer Nanopatterns”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May 2010.
  • [C38] (Invited Conference Paper) H. Zhao, J. Zhang, G. Y. Liu, X. H. Li, Y. K. Ee, H. Tong, T. Toma, G. S. Huang, and N. Tansu, “Approaches for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes – Device Physics and Epitaxy Engineering”, in Proc. of the American Vacuum Society (AVS) Meeting 2010, Ann-Arbor, MI, May 2010.
  • [C37] (Invited Conference Paper) H. Zhao, G. Liu, X. H. Li, Y. K. Ee, H. Tong, J. Zhang, G. S. Huang, and N. Tansu, “Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May 2010.
  • [C36] G. Liu, H. Zhao, J. Zhang, G. S. Huang, and N. Tansu, “Growths of Lattice-Matched AlInN Alloys on GaN”, in Proc. of the American Physical Society (APS) Annual March Meeting 2010, Portland, Oregon, March 2010.
  • [C35] H. Zhao, G. Liu, and N. Tansu, “Surface Plasmon Dispersion Engineering Utilizing Double-Metallic Ag / Au Layers for InGaN Quantum Wells Light Emitting Diodes”, in Proc. of the SPIE Photonics West 2010, LEDs: Materials, Devices, and Applications for Solid State Lighting XIV, San Francisco, CA, January 2010.
  • [C34] X. H. Li, H. Tong, H. Zhao, and N. Tansu, “Band Structure Calculation of Dilute-As GaNAs by First Principle”, in Proc. of the SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, January 2010.
  • [C33] G. Liu, H. Zhao, and N. Tansu, “Electron-Photon and Electron-LO Phonon Intersubband Scattering Rates in GaN / AlN Quantum Wells”, in Proc. of the SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, January 2010.
  • [C32] H. Tong, J. Zhang, H. Zhao, G. Liu, V. A. Handara, J. A. Herbsommer and N. Tansu, “Thermal Conductivity Measurement of Pulsed-MOVPE InN Alloy Grown on GaN / Sapphire by 3 ω Method”, in Proc. of the SPIE Photonics West 2010, Gallium Nitride Materials and Devices V, San Francisco, CA, January 2010.
  • [C31] (Invited Conference Paper) H. Zhao, G. Liu, R. A. Arif, Y. K. Ee, X. H. Li, J. Zhang, H. Tong, G. S. Huang, and N. Tansu, “Novel Approaches for Efficiency Enhancement in InGaN-Based Light-Emitting Diodes”, in Proc. of the 2nd International Conference on White LEDs and Solid State Lighting 2009, Taipei, Taiwan, December 2009.
  • [C30] H. Zhao, G. Liu, R. A. Arif, N. Tansu, “Effect of Current Injection Efficiency on Efficiency-Droop in InGaN Quantum Well Light-Emitting Diodes”, in Proc. of the IEEE International Semiconductor Device Research Symposium (ISDRS) 2009, College Park, MD, November 2009.
  • [C29] H. Zhao, G. S. Huang, G. Liu, X. Li, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Characteristics of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 480-525 nm”, in Proc. of the 67th IEEE Device Research Conference (DRC) 2009, University Park, PA, June 2009.
  • [C28] G. Xu, Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmuller, and J. S. Speck, “THz Generation from InN Films Based on Interference between Optical Rectification and Photocurrent Surge”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  • [C27] G. Sun, S. K. Tripathy, Y. J. Ding, G. Liu, G. S. Huang, H. Zhao, N. Tansu, and J. B. Khurgin, “Stark Effect Induced by Photogenerated Carriers in Multiple GaN/AlN Asymmetric Coupled Quantum Wells”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  • [C26] H. Zhao, M. Jamil, G. Liu, G. S. Huang, H. Tong, G. Xu, Y. J. Ding, N. Tansu, “Pulsed Metalorganic Vapor Phase Epitaxy of In-Polar and N-Polar InN Semiconductors on GaN / Sapphire Templates for Terahertz Emitters”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  • [C25] H. Zhao, G. Liu, X. Li, G. S. Huang, S. Tafon Penn, V. Dierolf, and N. Tansu, “Staggered InGaN Quantum Wells Light-Emitting Diodes at 520-nm Employing Graded Temperature Growths”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  • [C24] H. Zhao, R. A. Arif, and N. Tansu, “Analysis of Current Injection Efficiency and Efficiency Droop of InGaN Quantum-Wells Light-Emitting Diodes”, in Proc. of the SPIE Photonics West 2009, Physics and Simulation of Optoelectronics Devices XVII, San Jose, CA, January 2009.
  • [C23] H. Tong, H. Zhao, V. A. Handara, J. A. Herbsommer, and N. Tansu, “Analysis of Thermoelectric Characteristics of AlGaN and InGaN Semiconductors”, in Proc. of the SPIE Photonics West 2009, Physics and Simulation of Optoelectronics Devices XVII, San Jose, CA, January 2009.
  • [C22] H. Zhao, H. Tong, A. M. Driscoll, M. Jamil, G. S. Huang and N. Tansu, “Characteristics of Narrow-bandgap InN Semiconductors Grown on Ga-Polar and N-Polar GaN Templates by Pulsed Metalorganic Vapor Phase Epitaxy”, in Proc. of the SPIE Photonics West 2009, Gallium Nitride Materials and Devices IV, San Jose, CA, January 2009.
  • [C21] H. Zhao, G. Liu, X. Li, R. A. Arif, G. S. Huang, Y. K. Ee, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light Emitting Diodes Emitting at 520-525 nm Employing Graded Temperature Profile”, in Proc. of the SPIE Photonics West 2009, LEDs: Materials, Devices, and Applications for Solid State Lighting XIII, San Jose, CA, January 2009.
  • [C20] H. Zhao, R. A. Arif, and N. Tansu, “Staggered InGaN Quantum Well Diode Lasers Emitting at 500 nm”, in Proc. of the SPIE Photonics West 2009, Novel In-Plane Semiconductor Lasers VIII, San Jose, CA, January 2009.
  • [C19] (Invited Conference Paper) N. Tansu, H. Zhao, R. A. Arif, Y. K. Ee, G. Liu, X. Li, and G. S. Huang, “Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes”, in Proc. of the IEEE Photonics Global 2008, Nanophotonics Symposium, Singapore, Republic of Singapore, December 2008.
  • [C18] (Invited Conference Paper) N. Tansu, R. A. Arif, H. Zhao, G. S. Huang, and Y. K. Ee, “Polarization Engineering of III-Nitride Nanostructures for High-Efficiency Light Emitting Diodes”, in Proc. of the SPIE Optics + Photonics 2008, The 8th International Conference on Solid State Lighting, San Diego, CA, August 2008.
  • [C17] (Invited Conference Paper) N. Tansu, R. A. Arif, Y. K. Ee, H. Zhao, H. Tong, M. Jamil, and G. S. Huang, “Nano-Engineering of III-Nitride Semiconductor Optoelectronics and New Applications”, in Proc. of the International Conferences of Materials and Technologies (CIMTEC) 2008 ¨C 3rd International Conference on Smart Materials, Structures and Systems, Sicily, Italy, June 2008.
  • [C16] M. Jamil, H. Zhao, J. Higgins, and N. Tansu, “Narrow Band Gap (0.77 eV) InN on GaN / Sapphire Substrate by Pulsed MOCVD Growth Mode”, in Proc. of the TMS Electronics Material Conference (EMC) 2008, Santa Barbara, CA, June 2008.
  • [C15] M. Jamil, H. Zhao, J. Higgins, and N. Tansu, “MOVPE Growth and Photoluminescence of Narrow-Bandgap InN Alloys on GaN / Sapphire Substrate Using Pulsed Growth Mode”, in Proc. of the 14th Int. Conf. ¨C Metalorganic Vapor Phase Epitaxy (IC-MOVPE XIV) 2008, Metz, France, June 2008.
  • [C14] H. Zhao, R. A. Arif, G. S. Huang, Y. K. Ee, and N. Tansu, “Self-Consistent Optical Gain Analysis and Epitaxy of Strain-Compensated InGaN-AlGaN Quantum Wells for Laser Applications”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, San Jose, CA, May 2008.
  • [C13] R. A. Arif, H. Zhao, and N. Tansu, “InGaN-GaNAs Type-II “W” Quantum Well Lasers for Emission at 450-nm”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, San Jose, CA, May 2008.
  • [C12] R. A. Arif, H. Zhao, Y. K. Ee, S. T. Penn, V. Dierolf, and N. Tansu, “Spontaneous Recombination Rate and Luminescence Efficiency of Staggered InGaN Quantum Wells Light Emitting Diodes”, in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, San Jose, CA, May 2008.
  • [C11] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Approaches for Low-Threshold Green Nitride Lasers Diodes”, in IEEE Semiconductor Lasers Workshop 2008, San Jose, CA, May 2008.
  • [C10] R. A. Arif, Y. K. Ee, H. Zhao, and N. Tansu, “Radiative Efficiency and Spontaneous Recombination Rate of Staggered InGaN Quantum Wells Light Emitting Diodes Emitting at 420-510 nm”, in Proc. of the SPIE Photonics West 2008, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, San Jose, CA, January 2008.
  • [C9] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain and Spontaneous Emission of Strain-Compensated InGaN-AlGaN Quantum Wells Including Carrier Screening Effect”, in Proc. of the SPIE Photonics West 2008, Physics and Simulation of Optoelectronics Devices XVI, San Jose, CA, January 2008.
  • [C8] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain Analysis of Staggered InGaN Quantum Wells Active Regions for Lasers Emitting at 420-500 nm”, in Proc. of the 20th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2007, Lake Buena Vista, FL, October 2007.
  • [C7] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain Analysis of Strain Compensated InGaN-AlGaN Quantum Well Active Regions for Lasers Emitting at 420-520 nm”, in Proc. of the 7th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2007), Newark, DE, September 2007.
  • [C6] Y. K. Ee, H. Zhao, R. A. Arif, M. Jamil, and N. Tansu, “Self-Assembled InGaN Quantum Dots on GaN Grown by Metalorganic Vapor Phase Epitaxy”, in Proc. of the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2007, Salt Lake City, UT, August 2007.
  • [C5] (Invited Conference Paper) R. A. Arif, Y. K. Ee, H. Zhao, M. Jamil, and N. Tansu, “Nanostructure Engineering of InGaN-Based Active Regions for Improved III-Nitride Gain Media Emitting at 420-650 nm”, in Proc. of the European MRS (E-MRS) Spring Meeting 2007: Symposium F: Novel Gain Materials and Devices Based on III-N-V Compounds, Strasbourg, France, May-June 2007.
  • [C4] Q. Wang, H. Mu, X. Zhang, W. Lei, J. Wang, H. Zhao, C. Huang, and Y. Wang, “Field Emitters with Low Turn On Electric Field Based on Carbon Fibers”, The Seventh IEEE International Vacuum Electronics Conference and Sixth IEEE International Vacuum Electron Sources Conference, California, USA, April 2006.
  • [C3] C. Li, W. Lei, X. Zhang, H. Zhao, and G. Yang, “A New Structure to Improve the Luminance Efficiency of a FED Panel”, The Seventh IEEE International Vacuum Electronics Conference and Sixth IEEE International Vacuum Electron Sources Conference, California, USA, April 2006.
  • [C2] H. Zhao, W. Lei, X Zhang, and G Yang, “Numerical Analysis of the Performance of Field Emission Display with Secondary Electrons Emission”, The Seventh IEEE International Vacuum Electronics Conference and Sixth IEEE International Vacuum Electron Sources Conference, California, USA, April 2006.
  • [C1] H. Zhao, W. Lei, X. Zhang, W. Gu, and Y. Zhang, “Simulation of the distribution of carbon nanotube-based cathodes for microwave tubes”, The 18th Vacuum Nanoelectronics Conference IVNC 2005, Oxford UK, January 2005.