Updated list from Google Scholar.
2024 Publications
242. Jie Zhou, Jiarui Gong, Moheb Sheikhi, Ashok Dheenan, Qingxiao Wang, Haris Abbasi, Yang Liu, Carolina Adamo, Patrick Marshall, Nathan Wriedt, Clincy Cheung, Yiran Li, Shuoyang Qiu, Xiaohang Li, Tien Khee Ng, Qiaoqiang Gan, Vincent Gambin, Boon S Ooi, Siddharth Rajan, Zhenqiang Ma Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction Applied Surface Science 663 (2024): 160176.
241. Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi, Zane Jamal-Eddine, Brendan Gunning, Andrew Armstrong, Siddharth Rajan Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor Applied Physics Letters 124.22 (2024).
240. Jiarui Gong, Jie Zhou, Ashok Dheenan, Moheb Sheikhi, Fikadu Alema, Tien Khee Ng, Shubhra S Pasayat, Qiaoqiang Gan, Andrei Osinsky, Vincent Gambin, Chirag Gupta, Siddharth Rajan, Boon S Ooi, Zhenqiang Ma Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy Applied Surface Science 655 (2024): 159615..
239. John Niroula, Qingyun Xie, Nitul S Rajput, Patrick K Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C Applied Physics Letters 124.20 (2024).
238. Hyunsoo Lee, Joe F McGlone, Sheikh Ifatur Rahman, Christopher Chae, Chandan Joishi, Jinwoo Hwang, Siddharth Rajan Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors physica status solidi (RRL)–Rapid Research Letters (2024): 2400042.
2023 Publications
237.Sheikh Ifatur Rahman, Robert Armitage, and Siddharth Rajan. Demonstration of multi-active region p-down green LEDs with high quantum efficiency. Japanese Journal of Applied Physics 62.11 (2023): 110904.
236.Arnob Ghosh, Agnes Maneesha Dominic Merwin Xavier, Syed MN Hasan, Sheikh Ifatur Rahman, Alex Blackston, Andrew Allerman, Roberto C Myers, Siddharth Rajan, Shamsul Arafin; Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells Journal of Physics D: Applied Physics. 2023 Oct 26;57(3):035105
235. Sushovan Dhara, Ashok Dheenan, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Ahmad Ehteshamul Islam, Chandan Joishi, Andreas Fiedler, Joe F McGlone, Steven A Ringel, Jinwoo Hwang, Siddharth Rajan; Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3 Applied Physics Letters. 2023 Aug 21;123(8).
234. Sheikh Ifatur Rahman, Robert Armitage, Siddharth Rajan; Demonstration of multi-active region p-down green LEDs with high quantum efficiency Japanese Journal of Applied Physics. 2023 Aug 10
233. Agnes Maneesha Dominic Merwin Xavier, Arnob Ghosh, Sheikh Ifatur Rahman, Andrew Allerman, Darpan Verma, Roberto C Myers, Shamsul Arafin, Siddharth Rajan; Multi-active region AlGaN UV LEDs with transparent tunnel junctions Applied Physics Express. 2023 Aug 3;16(8):082001.
232. Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan; β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching Applied Physics Letters. 2023 Jul 10;123(2).
231. Taeyoung Kim, Chandan Joishi, Zhanbo Xia, Nidhin Kurian Kalarickal, Camelia Selcu, Tyson Back, Jonathan Ludwick, Siddharth Rajan; Demonstration of gallium oxide nano-pillar field emitter arrays AIP Advances. 2023 Jul 1;13(7)
230. Arnob Ghosh, Agnes MDM Xavier, Sheikh Ifatur Rahman, Andrew Allerman, Siddharth Rajan, Shamsul Arafin; Towards Electrically-Pumped AlGaN UV-A Lasers with Transparent Tunnel Junctions InCLEO: Science and Innovations 2023 May 7 (pp. SF2Q-5). Optica Publishing Group.
229. Sheikh Ifatur Rahman, Agnes Maneesha Dominic Xavier, Robert Armitage, Siddharth Rajan; Demonstration of p-side down green light emitting diodes with high external quantum efficiencies InLight-Emitting Devices, Materials, and Applications XXVII 2023 Mar 14 (Vol. 12441, pp. 127-131). SPIE.
228.Nidhin Kurian Kalarickal, Ashok Dheenan, Joe F. McGlone, Sushovan Dhara, Mark Brenner, Steven A. Ringel, Siddharth Rajan; Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density >550 mA/mm. Appl. Phys. Lett. 13 March 2023; 122 (11): 113506.
227.Dominic Merwin Xavier, A.M., Ghosh, A., Rahman, S.I., Allerman, A., Arafin, S. and Rajan, S., 2023. Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions. Applied Physics Letters, 122(8), p.081108.
2022 Publications
226.Rahman, S.I., Jamal-Eddine, Z., Xia, Z., Awwad, M., Armitage, R. and Rajan, S., 2022. Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects. Journal of Applied Physics, 132(23), p.235702.
225.Lee, H.S., Rahman, M.W., Verma, D., Poole, V.M., Myers, R.C., McCluskey, M.D. and Rajan, S., 2022. Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 40(6), p.062201.
224.Hettiaratchy, E.C., Wang, B., Dheenan, A., McGlone, J., Kalarickal, N.K., Bagués, N., Ringel, S., McComb, D.W., Rajan, S. and Myers, R.C., 2022. Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1− x) 2O3. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 40(6), p.062708.
223.Dhara, S., Kalarickal, N.K., Dheenan, A., Joishi, C. and Rajan, S., 2022. β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination. Applied Physics Letters, 121(20), p.203501.
222.Rahman, S.I., Jamal-Eddine, Z., Xia, Z., Awwad, M., Armitage, R. and Rajan, S., 2022. Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects. Journal of Applied Physics, 132(23), p.235702.
221.Kim, T., Joishi, C., Shih, P.C., Palacios, T. and Rajan, S., 2022. The impact of semiconductor surface states on vacuum field emission. Journal of Applied Physics, 132(16), p.165701.
220.Rahman, M.W., Joishi, C., Kalarickal, N.K., Lee, H. and Rajan, S., 2022, October. High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices. In Electrochemical Society Meeting Abstracts 242 (No. 32, pp. 1210-1210). The Electrochemical Society, Inc..
219.Fay, P., Moon, J.S. and Rajan, S., 2022. III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential. Applied Physics Letters, 121(14), p.140502.
218. Dheenan, A.V., McGlone, J.F., Kalarickal, N.K., Huang, H.L., Brenner, M., Hwang, J., Ringel, S.A. and Rajan, S., 2022. β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 121(11), p.113503.
217.Rahman, S.I., Jamal-Eddine, Z., Dominic Merwin Xavier, A.M., Armitage, R. and Rajan, S., 2022. III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop. Applied Physics Letters, 121(2), p.021102.
216.Rahman, M.W., Joishi, C., Kalarickal, N.K., Lee, H. and Rajan, S., 2022, May. Demonstration of BaTiO 3 Integrated kV-class AlGaN/GaN Schottky Barrier Diodes with Record Average Breakdown Electric Field. In 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 341-344). IEEE.
215.Bhuiyan, A.A.U., Feng, Z., Meng, L., Fiedler, A., Huang, H.L., Neal, A.T., Steinbrunner, E., Mou, S., Hwang, J., Rajan, S. and Zhao, H., 2022. Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films. Journal of Applied Physics, 131(14), p.145301.
214.Cheng, J., Poehler, S., Laskar, M., Ma, L., Kannappan, S., Rajan, S., Wu, Y. and Lu, W., 2022. Temperature dependent carrier transport in few-layered MoS2: from hopping to band transport. Journal of Physics D: Applied Physics, 55(19), p.195109.
213.Green, A.J., Speck, J., Xing, G., Moens, P., Allerstam, F., Gumaelius, K., Neyer, T., Arias-Purdue, A., Mehrotra, V., Kuramata, A. and Sasaki, K., 2022. β-Gallium oxide power electronics. APL Materials, 10(2), p.029201.
2021 Publications
212.Rahman, M.W., Kalarickal, N.K., Lee, H., Razzak, T. and Rajan, S., 2021. Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors. Applied Physics Letters, 119(19), p.193501.
211.Kalarickal, N.K., Fiedler, A., Dhara, S., Huang, H.L., Bhuiyan, A.A.U., Rahman, M.W., Kim, T., Xia, Z., Eddine, Z.J., Dheenan, A. and Brenner, M., 2021. Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux. Applied Physics Letters, 119(12), p.123503.
210.Gao, H., Muralidharan, S., Karim, M.R., Cao, L.R., Leedy, K.D., Zhao, H., Rajan, S., Look, D.C. and Brillson, L.J., 2021. Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 39(5), p.052205.
209.Adnan, M.M.R., Verma, D., Xia, Z., Kalarickal, N.K., Rajan, S. and Myers, R.C., 2021. Spectral Measurement of the Breakdown Limit of β− Ga 2 O 3 and Tunnel Ionization of Self-Trapped Excitons and Holes. Physical Review Applied, 16(3), p.034011.
208.Jamal-Eddine, Z., Gunning, B.P., Armstrong, A.A. and Rajan, S., 2021. Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs. Applied Physics Express, 14(9), p.092003.
207.Huang, H.L., Johnson, J., Chae, C., Bhuiyan, A.A.U., Feng, Z., Kalarickal, N.K., Rajan, S., Zhao, H. and Hwang, J., 2021. Point Defects and Alloy Incorporation in Ultrawide Bandgap β-(AlxGa1-x) 2O3 Films. Microscopy and Microanalysis, 27(S1), pp.2140-2142.
206.Potts, A.M., Bajaj, S., Daughton, D.R., Allerman, A.A., Armstrong, A.M., Razzak, T., Sohel, S.H. and Rajan, S., 2021. Al 0.7 Ga 0.3 N MESFET with all-refractory metal process for high temperature operation. IEEE Transactions on Electron Devices, 68(9), pp.4278-4282.
205.Rahman, M.W., Chandrasekar, H., Razzak, T., Lee, H. and Rajan, S., 2021. Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance. Applied Physics Letters, 119(1), p.013504.
204. Cheng, J., Rahman, M.W., Xie, A., Xue, H., Sohel, S.H., Beam, E., Lee, C., Yang, H., Wang, C., Cao, Y. and Rajan, S., 2021. Breakdown voltage enhancement in ScAlN/GaN high-electron-mobility transistors by high-k bismuth zinc niobate oxide. IEEE Transactions on Electron Devices, 68(7), pp.3333-3338.
203.Xue, H., Hussain, K., Talesara, V., Razzak, T., Gaevski, M., Mollah, S., Rajan, S., Khan, A. and Lu, W., 2021. High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V. physica status solidi (RRL)–Rapid Research Letters, 15(6), p.2000576.
202.Kalarickal, N.K., Fiedler, A., Dhara, S., Rahman, M.W., Kim, T., Xia, Z., Eddine, Z.J., Dheenan, A., Brenner, M. and Rajan, S., 2021. Planar and 3-dimensional damage free etching of $\beta $-Ga2O3 using atomic gallium flux. arXiv preprint arXiv:2105.09503.
201.Johnson, J.M., Huang, H.L., Wang, M., Mu, S., Varley, J.B., Uddin Bhuiyan, A.A., Feng, Z., Kalarickal, N.K., Rajan, S., Zhao, H. and Van de Walle, C.G., 2021. Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films. APL Materials, 9(5), p.051103.
200.Kalarickal, N.K., Xia, Z., Huang, H.L., Moore, W., Liu, Y., Brenner, M., Hwang, J. and Rajan, S., 2021. β-(Al 0.18 Ga 0.82) 2 O 3/Ga 2 O 3 double heterojunction transistor with average field of 5.5 MV/cm. IEEE Electron Device Letters, 42(6), pp.899-902.
199.Xia, Z., Kalarickal, N.K. and Rajan, S., 2021, March. Heterostructure and field engineering for high-performance gallium-oxide electronic devices. In Oxide-based Materials and Devices XII (Vol. 11687, p. 116870L). SPIE.
198.Jamal-Eddine, Z., Hasan, S.M., Gunning, B., Chandrasekar, H., Crawford, M., Armstrong, A., Arafin, S. and Rajan, S., 2021. Low voltage drop tunnel junctions grown monolithically by MOCVD. Applied Physics Letters, 118(5), p.053503.
197.Hasan, S.M., Gunning, B.P., Zane, J., Chandrasekar, H., Crawford, M.H., Armstrong, A., Rajan, S. and Arafin, S., 2021. All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions. Journal of Physics D: Applied Physics, 54(15), p.155103.
196.Cheng, J., Yang, H., Combs, N.G., Wu, W., Kim, H., Chandrasekar, H., Wang, C., Rajan, S., Stemmer, S. and Lu, W., 2021. Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors. Applied Physics Letters, 118(4), p.042105.
195.Xue, H., Razzak, T., Hwang, S., Coleman, A., Sohel, S.H., Rajan, S., Khan, A. and Lu, W., 2021. Small signal analysis of ultra-wide bandgap Al0. 7Ga0. 3N channel MESFETs. Microelectronic Engineering, 237, p.111495.
194.Kalarickal, N.K., Fiedler, A., Dhara, S., Huang, H.L., Bhuiyan, A.A.U., Rahman, M.W., Kim, T., Xia, Z., Eddine, Z.J., Dheenan, A. and Brenner, M., 2021. Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux. Applied Physics Letters, 119(12), p.123503
193.Kalarickal, N.K. and Rajan, S., 2021. β-(AlxGa (1− x)) 2O3 epitaxial growth, doping and transport. In Semiconductors and Semimetals (Vol. 107, pp. 49-76). Elsevier.
2020 Publications
192. Lee, H.S., Kalarickal, N.K., Rahman, M.W., Xia, Z., Moore, W., Wang, C. and Rajan, S., 2020. High-permittivity dielectric edge termination for vertical high voltage devices. Journal of Computational Electronics, 19, pp.1538-1545.
191. Kalarickal, N.K., Feng, Z., Bhuiyan, A.A.U., Xia, Z., Moore, W., McGlone, J.F., Arehart, A.R., Ringel, S.A., Zhao, H. and Rajan, S., 2020. Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors. IEEE Transactions on Electron Devices, 68(1), pp.29-35.
190. Feng, Z., Bhuiyan, A.A.U., Kalarickal, N.K., Rajan, S. and Zhao, H., 2020. Mg acceptor doping in MOCVD (010) β-Ga2O3. Applied Physics Letters, 117(22), p.222106.
189.Xia, Z., Kalarickal, N.K. and Rajan, S., 2020, November. Materials and Device Engineering for High-Performance Gallium Oxide Devices. In 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (pp. 1-6). IEEE.
188.Chatterjee, B., Song, Y., Lundh, J.S., Zhang, Y., Xia, Z., Islam, Z., Leach, J., McGray, C., Ranga, P., Krishnamoorthy, S. and Haque, A., 2020. Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors. Applied Physics Letters, 117(15), p.153501.
187. Joishi, C., Xia, Z., Jamison, J.S., Sohel, S.H., Myers, R.C., Lodha, S. and Rajan, S., 2020. Deep-recessed β-Ga₂O₃ delta-doped field-effect transistors with in situ epitaxial passivation. IEEE Transactions on Electron Devices, 67(11), pp.4813-4819.
186.Lee, C.H., Zhang, Y., Johnson, J.M., Koltun, R., Gambin, V., Jamison, J.S., Myers, R.C., Hwang, J. and Rajan, S., 2020. Molecular beam epitaxy of GaN on 2H–MoS2. Applied Physics Letters, 117(12), p.123102.
185.Amano, H., Collazo, R., De Santi, C., Einfeldt, S., Funato, M., Glaab, J., Hagedorn, S., Hirano, A., Hirayama, H., Ishii, R. and Kashima, Y., 2020. The 2020 UV emitter roadmap. Journal of Physics D: Applied Physics, 53(50), p.503001.
184.Lundh, J.S., Zhang, T., Zhang, Y., Xia, Z., Wetherington, M., Lei, Y., Kahn, E., Rajan, S., Terrones, M. and Choi, S., 2020. 2d materials for universal thermal imaging of micro-and nanodevices: An application to gallium oxide electronics. ACS Applied Electronic Materials, 2(9), pp.2945-2953.
183.Jamal-Eddine, Z., Hasan, S.M., Gunning, B., Chandrasekar, H., Crawford, M., Armstrong, A., Arafin, S. and Rajan, S., 2020. Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs. Applied Physics Letters, 117(5), p.051103.
182.Chandrasekar, H., Razzak, T., Wang, C., Reyes, Z., Majumdar, K. and Rajan, S., 2020. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates. Advanced Electronic Materials, 6(8), p.2000074.
181. Feng, Z., Bhuiyan, A.A.U., Xia, Z., Moore, W., Chen, Z., McGlone, J.F., Daughton, D.R., Arehart, A.R., Ringel, S.A., Rajan, S. and Zhao, H., 2020. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3. physica status solidi (RRL)–Rapid Research Letters, 14(8), p.2000145.
180.Lee, H.S., Zhang, Y., Chen, Z., Rahman, M.W., Zhao, H. and Rajan, S., 2020. Design and fabrication of vertical GaN pn diode with step-etched triple-zone junction termination extension. IEEE Transactions on Electron Devices, 67(9), pp.3553-3557.
179.Zhang, Y., Chen, Z., Li, W., Lee, H., Karim, M.R., Arehart, A.R., Ringel, S.A., Rajan, S. and Zhao, H., 2020. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices. Journal of Applied Physics, 127(21), p.215707.
178. Kalarickal, N.K., Xia, Z., McGlone, J.F., Liu, Y., Moore, W., Arehart, A.R., Ringel, S.A. and Rajan, S., 2020. High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer. Journal of Applied Physics, 127(21), p.215706.
177.Kalarickal, N.K., Feng, Z., Bhuiyan, A.A.U., Xia, Z., Moore, W., McGlone, J.F., Arehart, A.R., Ringel, S.A., Zhao, H. and Rajan, S., 2020. Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors. IEEE Transactions on Electron Devices, 68(1), pp.29-35.
176.Verma, D., Adnan, M.M.R., Rahman, M.W., Rajan, S. and Myers, R.C., 2020. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy. Applied Physics Letters, 116(20), p.202102.
175.Zhang, Y., Krishnamoorthy, S. and Rajan, S., 2020. Field-Effect Transistors 3: β-(AlxGa1− x) 2O3/Ga2O3 Modulation-Doped Field-Effect Transistors. In Gallium Oxide: Materials Properties, Crystal Growth, and Devices (pp. 609-621). Cham: Springer International Publishing.
174.Xue, H., Hussain, K., Razzak, T., Gaevski, M., Sohel, S.H., Mollah, S., Talesara, V., Khan, A., Rajan, S. and Lu, W., 2020. Al 0.65 Ga 0.35 N/Al 0.4 Ga 0.6 N micro-channel heterojunction field effect transistors with current density over 900 mA/mm. IEEE Electron Device Letters, 41(5), pp.677-680.
173. Sohel, S.H., Rahman, M.W., Xie, A., Beam, E., Cui, Y., Kruzich, M., Xue, H., Razzak, T., Bajaj, S., Cao, Y., Lu, W., Rajan, S.: ‘Linearity improvement with AlGaN polarization-graded field effect transistors with low pressure chemical vapor deposition grown SiNx passivation’, IEEE Electron Device Letters, 2020, 41, (1), pp. 19-22
172. Xue, H., Hussainm K., Razzak, T., Gaevski, M., Sohel, S.H., Mollah, S., Talesara, V., Khan, A., Rajan, S., Lu, W.: ‘Al0.65Ga0.35N/Al0.4Ga0.6N micro-channel heterojunction field effect transistors with current density over 900 mA/mm’, IEEE Electron Device Letters, 2020
171. Cheng, J., Wang, C., Freeze, C., Shoron, O., Combs, N., Yang, H., Kalarickal, N.K., Xia, Z., Stemmer, S., Rajan, S.: ‘High-current perovskite oxide BaTiO3/BaSnO3 heterostructure field effect transistors’, IEEE Electron Device Letters, 2020
170. Sohel, S.H., Xie, A., Beam, E., Xue, H., Razzak, T., Bajaj, S., Campbell, S., White, D., Wills, K., Cao, Y., Lu, W., Rajan, S.: ‘Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors’, Applied Physics Express, 2020, 13, (3), pp. 036502
169. Kumar, N., Vaca, D., Joishi, C., Xia, Z., Rajan, S., Kumar, S.: ‘Ultrafast thermoeflectance imaging and electrothermal modeling of beta-Ga2O3 MESFETS’, IEEE Electron Device Letters, 2020
168. Xue, H., Hwang, S., Razzak, T., Lee, C.H., Ortiz, G.C., Xia, Z., Sohel, S.H., Hwang, J., Rajan, S., Lu, W.: ‘All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors’, Solid-State Electronics, 2020, 164, pp. 107696
167. Chandrasekar, H., Ahadi, K., Razzak, T., Stemmer, S., Rajan, S.: ‘High current density SmTiO3/SrTiO3 field-effect transistors’, ACS Applied Electronic Materials, 2020, 2, (2), pp. 510-516
166. Cheng, J., Yang, H., Wang, C., Combs, N., Freeze, C., Shoron, O., Wu, W., Kalarickal, N.K., Chandrasekar, H., Stemmer, S., Rajan, S., Lu, W.: ‘Nanoscale etching of perovskite oxides for field effect transistor applications’, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Process, Measurement, and Phenomena, 2020, 38, (1), pp. 012201
165. Razzak, T., Chandraesekar, H., Hussain, K., Lee, C.H., Mamun, A., Xue, H., Xia, Z., Sohel, S.H., Rahman, M.W., Bajaj, S., Wang, C., Lu, W., Khan, A., Rajan, S.: ‘BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm’, Applied Physics Letters, 2020, 116, (2), pp. 023507
164. Verma, D., Adnan, M.M.R., Rahman, M.W., Rajan, S., Myers, R.C.: ‘Local electric field measurement in GaN diodes by Franz-Keldysh photocurrent spectroscopy’, 2020, Early Access
163. Yang, Z., Nath, D.N., Zhang, Y., Krishnamoorthy, S., Khurgin, J., Rajan. S. “III-Nitride tunneling hot electron transfer amplified (THETA)” in High-Frequency GaN Electronic Devices, 2020, pp. 109-157
2019 Publications
162. Xia, Z., Chandrasekar, H., Moore, W., Wang, C., Lee, A.J., McGlone, J., Kalarickal, N.D., Arehart, A., Ringel, S., Yang, F., Rajan, S.: ‘Metal/BaTiO3/beta-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field’, Applied Physics Letters, 2019, 115, (25), pp. 252104
161. Neal, A.T., Zhang, Y., Elhamri, S., Rajan, S., Mou, S.: ‘Zeeman spin-splitting in the (010) beta-Ga2O3 two-dimensional electron gas’, Applied Physics Letters, 2019, 115, (26), pp. 262103
160. Razzak, T., Rajan, S., Armstrong, A.: ‘Ga ultra-wide bandgap Alx1-xN channel transistors’, Wide Bandgap Semiconductor Electronics and Devices, 2019, 63, pp. 163
159. Sohel, S.H., Rahman, M.W., Xie, A., Beam, E., Cui, Y., Kruzich, M., Xue, H., Razzak, T., Bajaj, S., Cao, Y., Lu, W., Rajan, S.: ‘Linearity improvement with AlGaN polarization-graded field effect transistors with low pressure chemical vapor deposition grown SiNx passivation’, IEEE Electron Deivce Letters, 2019, 41, (1), pp. 19-22
158. Kumar, N., Joishi, C., Xia, Z., Rajan, S., Kumar, S.: ‘Electrothermal characteristics of delta-doped beta-Ga2O3 metal-semiconductor field-effect transistors’, IEEE Transactions on Electron Devices, 2019, 66, (12), pp. 5360-5366
157. Kalarickal, N., Xia, Z., McGlone, J., Liu, Y., Moore, W., Arehart, A., Ringel, S., Rajan, S.: ‘High electron density beta-(Al0.18Ga0.82)2O3/Ga2O3 modulation doping using ultra-thin (1nm) spacer layer’, 2019, Early Access
156. McGlone, J., Xia, Z., Joishi, C., Lodha, S., Rajan, S., Ringel, S., Arehart, A.: ‘Identification of critical buffer traps in Si delta-doped beta-Ga2O3 MESFETSs’, Applied Physics Letters, 2019, 115, (15), pp. 153501
155. Kalarickal, N.H., Xia, Z., McGlone, J., Krishnamoorthy, S., Moore, W., Brenner, M., Arehart, A., Ringel, S., Rajan, S.: ‘Mechanism of Si doping in plasma assisted MBE growth of beta-Ga2O3’, Applied Physics Letters, 2019, 115, (15), pp. 152106
154. Razzak, T., Chandrasekar, H., Hussain, K., Lee, C.H., Mamun, A., Xue, H., Xia, Z., Sohel, S.H., Rahman, M.W., Bajaj, S., Wang, C., Lu, W., Khan, A., Rajan, S.: ‘Lateral heterojunction BaTiO3/AlGaN diodes with > 8MV/cm breakdown field’, 2019, Early Access
153. Kalarickal, N.K., Xia, Z., McGlone, J., Liu, Y., Moore, W., Arehart, A., Ringel, S., Rajan, S.: ‘High electron density beta-(Al0.18Ga0.82)2O3/Ga2O3 modulation doping using ultra-thin (1nm) spacer layer’, 2019, Early Access
152. Mazumder, B., Sarker, J., Zhang, Y., Johnson, J.M., Zhu, M., Rajan, S., Hwang, J.: ‘Atomic scale investigation of chemical heterogeneity in beta-(AlxGa1-x)2O3 films using atom probe tomography’, Applied Physics Letters, 2019, 115, (13), pp. 132105
151. Sohel, S.H., Razzak, T., Xue, H., Rahman, M.W., Xie, A., Beam, E., Cao, Y., Hussain, K., Khan, A., Lu, W., Rajan, S.: ‘Novel channel engineering for high-performance AlGaN-based transistors’, Meeting Abstracts, 2019, (25), pp. 1173
150. Chandrasekar, H., Cheng, J., Wang, T., Xia, Z., Combs, N.G., Freeze, C.R., Marshall, P.B., McGlone, J., Arehart, A., Ringel, S., Janotti, A., Stemmer, S., Lu, W., Rajan, S.: ‘Velocity saturation in La-doped BaSnO3 thin films’, Applied Physics Letters, 2019, 115, (9), pp. 092102
149. Kalarickal, N.K., Xia, Z., Mcglone, J., Krishnamoorthy, S., Moore, W., Brenner, M., Arehart, A.R., Ringel, S., Rajan, S.: ‘Mechanism of Si doping in plasma assisted MBE growth of beta-Ga2O3’, 2019
148. Sarker, J., Zhang, Y., Zhu, M., Rajan, S., Hwang, J., Mazumder, B.: ‘Understanding the growth mechanism of beta-(AlxGa1-x)2O3 by Atom Probe Tomography’, Microscopy and Microanalysis, 2019, 25, (S2), pp. 2508-2509
147. Razzak, T., Hwang, S., Coleman, A., Xue, H., Sohel, S.H., Bajaj, S., Zhang, Y., Lu, W., Khan, A., Rajan, S.: ‘Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors’, Applied Physics Letters, 2019, 115, (4), pp. 043502
146. Arafin, S., Hasan, S., Jamal-Eddine, Z., Wickramarante, D., Paul, B., Rajan, S.: ‘Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission’, Semiconductor Science and Technology, 2019, 34, (7), pp. 074002
145. Joishi, C., Zhang, Y., Xia, Z., Sun, W., Arehart, A.R., Ringel, S., Lodha, S., Rajan, S.: ‘Breakdown characteristics of beta-(Al0.22Ga0.78)2O3/Ga2O3 field-effect transistors’, IEEE Electron Device Letters, 2019, 40, (8), pp. 1241-1244
144. Xia, Z., Xue, H., Joishi, C., Mcglone, J., Kalarickal, N.K., Sohel, S.H., Brenner, M., Arehart, A., Ringel, S., Lodha, S., Lu, W., Rajan, S.: ‘Beta-Ga2O3 delta-doped field-effect transistors with current gain cutoff frequency of 27 GHz’, IEEE Electron Device Letters, 2019, 40, (7), pp. 1052-1055
143. Jamal-Eddine, Z., Zhang, Y., Rajan, S.: ‘Recent progress in III-nitride tunnel junction-based optoelectronics’, International Journal of High Speed Electronics and Systems, 2019, 28, (01n02), pp. 1940012
142. Razzak, T., Rajan, S., Armstrong, A.: ‘Ultra-wide bandgap AlxGa1-xN channel transistors’, International Journal of High-Speed Electronics and Systems, 2019, 28, (01n02), pp. 1940009
141. Zhang, Y., Jamal-Eddine, Z., Rajan, S.: ‘Recent progress of tunnel junction-based ultra-violet light emitting diodes’, Japanese Journal of Applied Physics, 2019, 58, (SC), pp. SC0805
140. Biswas, D., Joishi, C., Biswas, J., Thakar, K., Rajan, S., Lodha, S.: ‘Enhanced n-type beta-Ga2O3 (201) gate stack performance using Al2O3/SiO2 bi-layer dielectric’, Applied Physics Letter, 2019, 114, (21), pp. 212106
139. Xue, H., Lee, C.H., Hussian, K., Razzak, T., Abdullah, M., Xia, Z., Sohel, S.H., Khan, A., Rajan, S., Lu, W.: ‘Al0.75Ga0.22N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz’, Applied Physics Express, 2019, 12, (6), pp. 066502
138. Ancona, M.G., Calame, J.P., Meyer, D.J., Rajan, S., Downey, B.P.: ‘Compositionally graded III-N HEMTs for improved linearity: a simulation study’, IEEE Transactions on Electron Devices, 2019, 66, (5), pp. 2151-2157
137. Sohel, S.H., Xie, A., Beam, E., Xue, H., Razzak, T., Bajaj, S., Cao, Y., Lee, C., Lu, W., Rajan, S.: ‘Polarization engineering of AIGaN/GaN HEMT with graded InGaN sub-channel for high-linearity X-band application’, IEEE Electron Device Letters, 2019, 40, (4), pp. 522-525
136. Xia, Z., Wang, C., Kalarickal, N.K., Stemmer, S., Rajan, S.: ‘Design of transistors using high-permittivity materials’, IEEE Transactions on Electron Devices, 2019, 66, (2), pp. 898-900
135. Zhang, Y., Xia, Z., McGlone, J., Sun, W., Joishi, C., Arehart, A.R., Ringel, S.A., Rajan, S.: ‘Evaluation of low-temperature saturation velocity in beta-(AlxGa1-x)2O3/Ga2O3 modulation-doped field-effect transistors’, IEEE Transactions of Electron Devices, 2019, 66, (3), pp. 1574-1578
134.Pratiyush, S.P., Krishnamoorthy, S., Rangarajan, M., Rajan, S., Nath, D.: ‘Advances in Ga2O3 solar-blind UV photodetectors’, Gallium Oxide, 2019, pp. 369-399
133. Razzak T., Rajan S. and Armstrong A., “Ultra-Wide Bandgap AlxGa1-xN Channel Transistors”, in Wide Bandgap Semiconductor Electronics and Devices, 63, 163, 2019
2018 Publications
132. Razzak, T., Hwang, S., Coleman, A., Xue, H., Sohel, S.H., Bajaj, S., Zhang, Y., Lu, W., Khan, A., Rajan, S.: “Design of compositionally graded contact layers for MOCVD grown high Al-conttent AlGaN transistors”, Applied Physics, 2018
131. Razzak, T., Hwang, S., Bajaj, S., Zhang, Y., Jamal-Eddine, Z., Sohel, S.H., Lu, W., Rajan, S.: “RF operationin graded Alx Ga1-xN (x=0.65 to 0.82) channel transistors”, Institution of Engineering and Technology, 2018, 54, (23), pp.1351-1353
130. Kong, W., Li, H., Qiao, K., Kim, Y., Lee, K., Nie, Y., Lee, D., Osadchy, T., Molnar, R.J., Gaskill, D.K., Myers-Ward, R.L., Daniels, K.M., Zhang, Y., Sundram, S., Yu, Y., Bae, S.-h., Rajan, S., Shao-Horn, Y., Cho, K., Ougazzaden, A., Grossman, J.C., and Kim, J.: ‘Polarity governs atomic interaction through two-dimensional materials’, Nature Materials, 2018, 17, (11), pp. 999-1004
129. O’Hara, D.J., Zhu, T., Trout, A.H., Ahmed, A.S., Luo, Y.K., Lee, C.H., Brenner, M.R., Rajan, S., Gupta, J.A., McComb, D.W., and Kawakami, R.K.: ‘Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit’, Nano Letters, 2018, 18, (5), pp. 3125-3131
128. Bajaj, S., Allerman, A., Armstrong, A., Razzak, T., Talesara, V., Sun, W., Sohel, S.H., Zhang, Y., Lu, W., Arehart, A.R., Akyol, F., and Rajan, S.: ‘High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm’, IEEE Electron Device Letters, 2018, 39, (2), pp. 256-259
127. Armstrong, A.M., Klein, B.A., Colon, A., Allerman, A.A., Douglas, E.A., Baca, A.G., Fortune, T.R., Abate, V.M., Bajaj, S., and Rajan, S.: ‘Ultra-wide band gap AlGaN polarization-doped field effect transistor’, Japanese Journal of Applied Physics, 2018, 57, (7), pp. 074103
126. Gao, H., Muralidharan, S., Pronin, N., Karim, M.R., White, S.M., Asel, T., Foster, G., Krishnamoorthy, S., Rajan, S., Cao, L.R., Higashiwaki, M., von Wenckstern, H., Grundmann, M., Zhao, H., Look, D.C., and Brillson, L.J.: ‘Optical signatures of deep level defects in Ga2O3’, Applied Physics Letters, 2018, 112, (24), pp. 242102
125. Mcglone, J.F., Xia, Z., Zhang, Y., Joishi, C., Lodha, S., Rajan, S., Ringel, S.A., and Arehart, A.R.: ‘Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs on an Fe-Doped beta-Ga2O3 Substrate’, IEEE Electron Device Letters, 2018, 39, (7), pp. 1042-1045
124. Joishi, C., Xia, Z., McGlone, J., Zhang, Y., Arehart, A.R., Ringel, S., Lodha, S., and Rajan, S.: ‘Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors’, Applied Physics Letters, 2018, 113, (12), pp. 123501
123. Zhang, Y., Jamal-Eddine, Z., Akyol, F., Bajaj, S., Johnson, J.M., Calderon, G., Allerman, A.A., Moseley, M.W., Armstrong, A.M., Hwang, J., and Rajan, S.: ‘Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency’, Applied Physics Letters, 2018, 112, (7), pp. 071107
122. Xia, Z., Joishi, C., Krishnamoorthy, S., Bajaj, S., Zhang, Y., Brenner, M., Lodha, S., and Rajan, S.: ‘Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts’, IEEE Electron Device Letters, 2018, 39, (4), pp. 568-571
121. Zhang, Y., Neal, A., Xia, Z., Joishi, C., Johnson, J.M., Zheng, Y., Bajaj, S., Brenner, M., Dorsey, D., Chabak, K., Jessen, G., Hwang, J., Mou, S., Heremans, J.P., and Rajan, S.: ‘Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures’, Applied Physics Letters, 2018, 112, (17), pp. 173502
120. Sohel, S.H., Xie, A., Beam, E., Xue, H., Roussos, J.A., Razzak, T., Bajaj, S., Cao, Y., Meyer, D.J., Lu, W., and Rajan, S.: ‘X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors’, IEEE Electron Device Letters, 2018, 39, (12), pp. 1884-1887
119. Pratiyush, A.S., Krishnamoorthy, S., Kumar, S., Xia, Z., Muralidharan, R., Rajan, S., and Nath, D.N.: ‘Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector’, Japanese Journal of Applied Physics, 2018, 57, (6), pp. 060313
118. Zhang, Y., Joishi, C., Xia, Z., Brenner, M., Lodha, S., and Rajan, S.: ‘Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors’, Applied Physics Letters, 2018, 112, (23), pp. 233503
117. Joishi, C., Rafique, S., Xia, Z., Han, L., Krishnamoorthy, S., Zhang, Y., Lodha, S., Zhao, H., and Rajan, S.: ‘Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes’, Applied Physics Express, 2018, 11, (3), pp. 031101
116. Pratiyush, A.S., Xia, Z., Kumar, S., Zhang, Y., Joishi, C., Muralidharan, R., Rajan, S., and Nath, D.N.: ‘MBE-Grown $\beta $-Ga 2 O 3-Based Schottky UV-C Photodetectors With Rectification Ratio~ 10 7.’, IEEE Photonics Technology Letters, 2018, 30, (23), pp. 2025-2028
2017 Publications
115. Zhang, Y., Krishnamoorthy, S., Akyol, F., Johnson, J.M., Allerman, A.A., Moseley, M.W., Armstrong, A.M., Hwang, J., and Rajan, S.: ‘Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs’, Applied Physics Letters, 2017, 111, (5), pp. 051104
114. Lee, C.H., Krishnamoorthy, S., Paul, P.K., O’Hara, D.J., Brenner, M.R., Kawakami, R.K., Arehart, A.R., and Rajan, S.: ‘Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy’, Applied Physics Letters, 2017, 111, (20), pp. 202101
113. Bajaj, S., Yang, Z., Akyol, F., Park, P.S., Zhang, Y., Price, A.L., Krishnamoorthy, S., Meyer, D.J., and Rajan, S.: ‘Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity’, IEEE Transactions on Electron Devices, 2017, 64, (8), pp. 3114-3119
112. Krishnamoorthy, S., Xia, Z., Bajaj, S., Brenner, M., and Rajan, S.: ‘Delta-doped β-gallium oxide field-effect transistor’, Applied Physics Express, 2017, 10, (5), pp. 051102 (Featured as Spotlight article)
111. Zhang, Y., Krishnamoorthy, S., Akyol, F., Bajaj, S., Allerman, A.A., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Tunnel-injected sub-260 nm ultraviolet light emitting diodes’, Applied Physics Letters, 2017, 110, (20), pp. 201102 (Featured in Editor’s Picks)
110. Lee, C.H., Krishnamoorthy, S., O’Hara, D.J., Brenner, M.R., Johnson, J.M., Jamison, J.S., Myers, R.C., Kawakami, R.K., Hwang, J., and Rajan, S.: ‘Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates’, Journal of Applied Physics, 2017, 121, (9), pp. 094302
109. Lee, C.H., Lee, E.W., McCulloch, W., Jamal-Eddine, Z., Krishnamoorthy, S., Newburger, M.J., Kawakami, R.K., Wu, Y., and Rajan, S.: ‘A self-limiting layer-by-layer etching technique for 2H-MoS2’, Applied Physics Express, 2017, 10, (3), pp. 035201
2016 Publications
108. Bhardwaj, S., Sensale-Rodriguez, B., Xing, H.G., Rajan, S., and Volakis, J.L.: ‘Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors’, Journal of Applied Physics, 2016, 119, (1), pp. 013102
107. Zhang, Y., Krishnamoorthy, S., Akyol, F., Allerman, A.A., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes’, Applied Physics Letters, 2016, 109, (19), pp. 191105
106. Akyol, F., Krishnamoorthy, S., Zhang, Y., Johnson, J., Hwang, J., and Rajan, S.: ‘Erratum: “Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance” [Appl. Phys. Lett. 108, 131103 (2016)]’, Applied Physics Letters, 2016, 109, (10), pp. 109901
105. Zhang, Y., Krishnamoorthy, S., Akyol, F., Allerman, A.A., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions’, Applied Physics Letters, 2016, 109, (12), pp. 121102
104. Zhang, Y., Allerman, A.A., Krishnamoorthy, S., Akyol, F., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs’, Applied Physics Express, 2016, 9, (5), pp. 052102
103. Bajaj, S., Akyol, F., Krishnamoorthy, S., Zhang, Y., and Rajan, S.: ‘AlGaN channel field effect transistors with graded heterostructure ohmic contacts’, Applied Physics Letters, 2016, 109, (13), pp. 133508
102. Khurgin, J.B., Bajaj, S., and Rajan, S.: ‘Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors’, Applied Physics Express, 2016, 9, (9), pp. 094101
101. Krishnamoorthy, S., Lee, E.W., Lee, C.H., Zhang, Y., McCulloch, W.D., Johnson, J.M., Hwang, J., Wu, Y., and Rajan, S.: ‘High current density 2D/3D MoS2/GaN Esaki tunnel diodes’, Applied Physics Letters, 2016, 109, (18), pp. 183505
2015 Publications
100. Khurgin, J.B., Bajaj, S., and Rajan, S.: ‘Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride’, Applied Physics Letters, 2015, 107, (26), pp. 262101
99. Kornblum, L., Jin, E.N., Shoron, O., Boucherit, M., Rajan, S., Ahn, C.H., and Walker, F.J.: ‘Electronic transport of titanate heterostructures and their potential as channels on (001) Si’, Journal of Applied Physics, 2015, 118, (10), pp. 105301
98. Zhang, Y., Krishnamoorthy, S., Johnson, J.M., Akyol, F., Allerman, A., Moseley, M.W., Armstrong, A., Hwang, J., and Rajan, S.: ‘Interband tunneling for hole injection in III-nitride ultraviolet emitters’, Applied Physics Letters, 2015, 106, (14), pp. 141103
97. Yang, Z., Nath, D.N., Zhang, Y., Khurgin, J.B., and Rajan, S.: ‘Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors’, IEEE Electron Device Letters, 2015, 36, (5), pp. 436-438
96. Arulkumaran, S., Ng, G.I., Manoj Kumar, C.M., Ranjan, K., Teo, K.L., Shoron, O.F., Rajan, S., Bin Dolmanan, S., and Tripathy, S.: ‘Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors’, Applied Physics Letters, 2015, 106, (5), pp. 053502
95. Akyol, F., Krishnamoorthy, S., Zhang, Y., and Rajan, S.: ‘GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions’, Applied Physics Express, 2015, 8, (8), pp. 082103
94. Park, P.S., Krishnamoorthy, S., Bajaj, S., Nath, D.N., and Rajan, S.: ‘Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs’, IEEE Electron Device Letters, 2015, 36, (3), pp. 226-228
93. Bajaj, S., Shoron, O.F., Park, P.S., Krishnamoorthy, S., Akyol, F., Hung, T.-H., Reza, S., Chumbes, E.M., Khurgin, J., and Rajan, S.: ‘Density-dependent electron transport and precise modeling of GaN high electron mobility transistors’, Applied Physics Letters, 2015, 107, (15), pp. 153504
92. Lee, C.H., McCulloch, W., Lee, E.W., Ma, L., Krishnamoorthy, S., Hwang, J., Wu, Y., and Rajan, S.: ‘Transferred large area single crystal MoS2 field effect transistors’, Applied Physics Letters, 2015, 107, (19), pp. 193503
91. Lee, E.W., Lee, C.H., Paul, P.K., Ma, L., McCulloch, W.D., Krishnamoorthy, S., Wu, Y., Arehart, A.R., and Rajan, S.: ‘Layer-transferred MoS2/GaN PN diodes’, Applied Physics Letters, 2015, 107, (10), pp. 103505
90. Yang, Z., Zhang, Y., Krishnamoorthy, S., Nath, D.N., Khurgin, J.B., and Rajan, S.: ‘Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter’, Applied Physics Letters, 2016, 108, (19), pp. 192101
2014 Publications
89. ee, E.W., Ma, L., Nath, D.N., Lee, C.H., Arehart, A., Wu, Y., and Rajan, S.: ‘Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions’, Applied Physics Letters, 2014, 105, (20), pp. 203504
88. Yang, Z., Nath, D., and Rajan, S.: ‘Negative differential resistance in GaN tunneling hot electron transistors’, Applied Physics Letters, 2014, 105, (20), pp. 202111
87. Bajaj, S., Hung, T.-H., Akyol, F., Nath, D., and Rajan, S.: ‘Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage’, Applied Physics Letters, 2014, 105, (26), pp. 263503
86. Krishnamoorthy, S., Akyol, F., and Rajan, S.: ‘InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes’, Applied Physics Letters, 2014, 105, (14), pp. 141104
85. Ramesh, P., Krishnamoorthy, S., Rajan, S., and Washington, G.N.: ‘Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures’, Applied Physics Letters, 2014, 104, (24), pp. 243503
84. Ma, L., Nath, D.N., Lee, E.W., Lee, C.H., Yu, M., Arehart, A., Rajan, S., and Wu, Y.: ‘Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1’, Applied Physics Letters, 2014, 105, (7), pp. 072105
83. Boucherit, M., Shoron, O., Jackson, C.A., Cain, T.A., Buffon, M.L.C., Polchinski, C., Stemmer, S., and Rajan, S.: ‘Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures’, Applied Physics Letters, 2014, 104, (18), pp. 182904
82. Hung, T.-H., Sasaki, K., Kuramata, A., Nath, D.N., Sung Park, P., Polchinski, C., and Rajan, S.: ‘Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3’, Applied Physics Letters, 2014, 104, (16), pp. 162106
81. Krishnamoorthy, Sriram, Fatih Akyol, and Siddharth Rajan. “III-nitride tunnel junctions for efficient solid state lighting.” SPIE OPTO. International Society for Optics and Photonics, 2014.
80. Hung, T., Park, P.S., Krishnamoorthy, S., Nath, D.N., and Rajan, S.: ‘Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs’, IEEE Electron Device Letters, 2014, 35, (3), pp. 312-314
79. Laskar, M.R., Nath, D.N., Ma, L., Lee, E.W., Lee, C.H., Kent, T., Yang, Z., Mishra, R., Roldan, M.A., Idrobo, J.-C., Pantelides, S.T., Pennycook, S.J., Myers, R.C., Wu, Y., and Rajan, S.: ‘p-type doping of MoS2 thin films using Nb’, Applied Physics Letters, 2014, 104, (9), pp. 092104
2013 Publications
78. Stemmer, S., Chobpattana, V., Son, J., and Rajan, S.: ‘(Invited) Interface Trap Densities and Admittance Characteristics of III-V MOS Capacitors’, 2013, 50, (4), pp. 141-144
77. Wang, Y., Luo, X., Zhang, N., Laskar, M.R., Ma, L., Wu, Y., Rajan, S., and Lu, W.: ‘Low frequency noise in chemical vapor deposited MoS2’, in Editor (Ed.)^(Eds.): ‘Book Low frequency noise in chemical vapor deposited MoS2’ (2013, edn.), pp. 1-3
76. Yang, J., Cui, S., Ma, T.P., Hung, T.-H., Nath, D., Krishnamoorthy, S., and Rajan, S.: ‘A study of electrically active traps in AlGaN/GaN high electron mobility transistor’, Applied Physics Letters, 2013, 103, (17), pp. 173520
75. Mazumder, B., Esposto, M., Hung, T.H., Mates, T., Rajan, S., and Speck, J.S.: ‘Characterization of a dielectric/GaN system using atom probe tomography’, Applied Physics Letters, 2013, 103, (15), pp. 151601
74. Akyol, F., Krishnamoorthy, S., and Rajan, S.: ‘Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop’, Applied Physics Letters, 2013, 103, (8), pp. 081107
73. Boucherit, M., Shoron, O.F., Cain, T.A., Jackson, C.A., Stemmer, S., and Rajan, S.: ‘Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors’, Applied Physics Letters, 2013, 102, (24), pp. 242909
72. Su, M., Chen, C., and Rajan, S.: ‘Prospects for the application of GaN power devices in hybrid electric vehicle drive systems’, Semiconductor Science and Technology, 2013, 28, (7), pp. 074012
71. Sung Park, P., Reddy, K.M., Nath, D.N., Yang, Z., Padture, N.P., and Rajan, S.: ‘Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion’, Applied Physics Letters, 2013, 102, (15), pp. 153501
70. Nath, D.N., Yang, Z.C., Lee, C.Y., Park, P.S., Wu, Y.R., and Rajan, S.: ‘Unipolar vertical transport in GaN/AlGaN/GaN heterostructures’, Applied Physics Letters, 2013, 103, (2), pp. 022102
69. Laskar, M.R., Ma, L., Kannappan, S., Sung Park, P., Krishnamoorthy, S., Nath, D.N., Lu, W., Wu, Y., and Rajan, S.: ‘Large area single crystal (0001) oriented MoS2’, Applied Physics Letters, 2013, 102, (25), pp. 252108
68. Krishnamoorthy, S., Kent, T.F., Yang, J., Park, P.S., Myers, R.C., and Rajan, S.: ‘GdN Nanoisland-Based GaN Tunnel Junctions’, Nano Letters, 2013, 13, (6), pp. 2570-2575
67. Krishnamoorthy, S., Akyol, F., Park, P.S., and Rajan, S.: ‘Low resistance GaN/InGaN/GaN tunnel junctions’, Applied Physics Letters, 2013, 102, (11), pp. 113503
66. Hung, T.-H., Krishnamoorthy, S., Esposto, M., Neelim Nath, D., Sung Park, P., and Rajan, S.: ‘Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces’, Applied Physics Letters, 2013, 102, (7), pp. 072105
65. Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., and Ringel, S.A.: ‘Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors’, Solid-State Electronics, 2013, 80, pp. 19-22
64. Kim, H., Nath, D., Rajan, S., and Lu, W.: ‘Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors’, Journal of Electronic Materials, 2013, 42, (1), pp. 10-14
2012 Publications
63. Santino D. Carnevale, Thomas F. Kent , Patrick J. Phillips , A.T.M. Golam Sarwar, Robert F. Klie, Siddharth Rajan, Roberto C. Myers, “Graded nanowire ultraviolet LEDs by polarization engineering“, Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670L
62. Ramesh, P., Krishnamoorthy, S., Rajan, S., and Washington, G.N.: ‘Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications’, Smart Materials and Structures, 2012, 21, (9), pp. 094003
61. Stemmer, S., Chobpattana, V., and Rajan, S.: ‘Frequency dispersion in III-V metal-oxide-semiconductor capacitors’, Applied Physics Letters, 2012, 100, (23), pp. 233510
60. Fang, T., Wang, R., Xing, H., Rajan, S., and Jena, D.: ‘Effect of Optical Phonon Scattering on the Performance of GaN Transistors’, IEEE Electron Device Letters, 2012, 33, (5), pp. 709-711
59. Park, P.S., Nath, D.N., and Rajan, S.: ‘Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures’, IEEE Electron Device Letters, 2012, 33, (7), pp. 991-993
58. Akyol, F., Nath, D.N., Krishnamoorthy, S., Park, P.S., and Rajan, S.: ‘Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes’, Applied Physics Letters, 2012, 100, (11), pp. 111118
57. Lecce, V.D., Krishnamoorthy, S., Esposto, M., Hung, T.-H., Chini, A., and Rajan, S.: ‘Metal-oxide barrier extraction by Fowler-Nordheim tunneling onset in Al2O3-onGaN MOS diodes’, in Editor (Ed.)^(Eds.): ‘Book Metal-oxide barrier extraction by Fowler-Nordheim tunneling onset in Al2O3-onGaN MOS diodes’ (Institution of Engineering and Technology, 2012, edn.), pp. 347-348
56. Nath, D.N., Park, P.S., Esposto, M., Brown, D., Keller, S., Mishra, U.K., and Rajan, S.: ‘Polarization engineered 1-dimensional electron gas arrays’, Journal of Applied Physics, 2012, 111, (4), pp. 043715
55. Carnevale, S.D., Kent, T.F., Phillips, P.J., Mills, M.J., Rajan, S., and Myers, R.C.: ‘Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence’, Nano Letters, 2012, 12, (2), pp. 915-920
54. Sung Park, P., Nath, D.N., Krishnamoorthy, S., and Rajan, S.: ‘Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization’, Applied Physics Letters, 2012, 100, (6), pp. 063507
2011 Publications
53. Krishnamoorthy, S., Park, P.S., and Rajan, S.: ‘Demonstration of forward inter-band tunneling in GaN by polarization engineering’, Applied Physics Letters, 2011, 99, (23), pp. 233504
52. Moetakef, P., Cain, T.A., Ouellette, D.G., Zhang, J.Y., Klenov, D.O., Janotti, A., Van de Walle, C.G., Rajan, S., Allen, S.J., and Stemmer, S.: ‘Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces’, Applied Physics Letters, 2011, 99, (23), pp. 232116
51. Hung, T.-H., Esposto, M., and Rajan, S.: ‘Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors’, Applied Physics Letters, 2011, 99, (16), pp. 162104
50. JSon, J., Rajan, S., Stemmer, S., and James Allen, S.: ‘A heterojunction modulation-doped Mott transistor’, Journal of Applied Physics, 2011, 110, (8), pp. 084503
49. Esposto, M., Krishnamoorthy, S., Nath, D.N., Bajaj, S., Hung, T.-H., and Rajan, S.: ‘Electrical properties of atomic layer deposited aluminum oxide on gallium nitride’, Applied Physics Letters, 2011, 99, (13), pp. 133503
48. Gür, E., Zhang, Z., Krishnamoorthy, S., Rajan, S., and Ringel, S.A.: ‘Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies’, Applied Physics Letters, 2011, 99, (9), pp. 092109
47. Mishra, R., Restrepo, O.D., Rajan, S., and Windl, W.: ‘First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures’, Applied Physics Letters, 2011, 98, (23), pp. 232114
46. Akyol, F., Nath, D.N., Gür, E., Park, P.S., and Rajan, S.: ‘N-Polar III–Nitride Green (540 nm) Light Emitting Diode’, Japanese Journal of Applied Physics, 2011, 50, (5), pp. 052101
45. Esposto, M., Chini, A., and Rajan, S.: ‘Analytical Model for Power Switching GaN-Based HEMT Design’, IEEE Transactions on Electron Devices, 2011, 58, (5), pp. 1456-1461
44. Nath, D.N., Gür, E., Ringel, S.A., and Rajan, S.: ‘Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN’, Journal of Vacuum Science & Technology B, 2011, 29, (2), pp. 021206
43. Park, P.S., and Rajan, S.: ‘Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs’, IEEE Transactions on Electron Devices, 2011, 58, (3), pp. 704-708.
2010 Publications
42. Emre Koksal, C., Ekici, E., and Rajan, S.: ‘Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas’, Nano Communication Networks, 2010, 1, (3), pp. 160-172
41. Krishnamoorthy, S., Nath, D.N., Akyol, F., Park, P.S., Esposto, M., and Rajan, S.: ‘Polarization-engineered GaN/InGaN/GaN tunnel diodes’, Applied Physics Letters, 2010, 97, (20), pp. 203502
40. Nath, D.N., Keller, S., Hsieh, E., DenBaars, S.P., Mishra, U.K., and Rajan, S.: ‘Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure’, Applied Physics Letters, 2010, 97, (16), pp. 162106
39. ang, C.K., Roblin, P., Groote, F.D., Ringel, S.A., Rajan, S., Teyssier, J.P., Poblenz, C., Pei, Y., Speck, J., and Mishra, U.K.: ‘Pulsed-IV Pulsed-RF cold-FET parasitic extraction of biased AIGaN/GaN HEMTs using larger signal network analyzer’, IEEE Transactions on Microwave Theory and Techniques, 2010, 58, (5), pp. 1077-1088
38. Kolluri, S., Keller, S., Brown, D., Gupta, G., Rajan, S., DenBaars, S.P., and Mishra, U.K.: ‘Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates’, Journal of Applied Physics, 2010, 108, (7), pp. 074502
37. Tripathi, N., Jindal, V., Shahedipour-Sandvik, F., Rajan, S., and Vert, A.: ‘Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces’, Solid-State Electronics, 2010, 54, (11), pp. 1291-1294
36. Nath, D.N., Gür, E., Ringel, S.A., and Rajan, S.: ‘Molecular beam epitaxy of N-polar InGaN’, Applied Physics Letters, 2010, 97, (7), pp. 071903
35. P. Ramesh, S. Krishnamoorthy, P.S. Park, S. Rajan, G. Washington, “Distributed intelligence using gallium nitride based active devices,” Proc. of SPIE 7643 (2010).
2009 Publications
34. Pei, Y., Rajan, S., Higashiwaki, M., Chen, Z., DenBaars, S.P., and Mishra, U.K.: ‘Effect of dielectric thickness on power performance of AIGaN/GaN HEMTs’, IEEE Electron Device Letters, 2009, 30, (4), pp. 313-315
33. Fujiwara, T., Rajan, S., Keller, S., Higashiwaki, M., Speck, J.S., DenBaars, S.P., and Mishra, U.K.: ‘Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors’, Applied Physics Express, 2009, 2, (1), pp. 011001
32. Tamboli, A.C., Schmidt, M.C., Rajan, S., Speck, J.S., Mishra, U.K., DenBaars, S.P., and Hu, E.L.: ‘Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN’, 2009, 156, (1), pp. H47-H51
31. Brown, D.F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S.P., and Mishra, U.K.: ‘Electron transport in nitrogen-polar high electron mobility transistors’, physica status solidi c, 2009, 6, (S2), pp. S960-S963
30. Keller, S., Suh, C.S., Fichtenbaum, N.A., Furukawa, M., Chu, R., Chen, Z., Vijayraghavan, K., Rajan, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures’, Journal of Applied Physics, 2008, 104, (9), pp. 093510
2008 Publications
29. Keller, S., Suh, C.S., Chen, Z., Chu, R., Rajan, S., Fichtenbaum, N.A., Furukawa, M., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition’, Journal of Applied Physics, 2008, 103, (3), pp. 033708
28. Raman, A., Dasgupta, S., Rajan, S., Speck, J.S., and Mishra, U.K.: ‘AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit’, Japanese Journal of Applied Physics, 2008, 47, (5), pp. 3359-3361
27. Imer, B., Haskell, B., Rajan, S., Keller, S., Mishra, U.K., Nakamura, S., Speck, J.S., and DenBaars, S.P.: ‘Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)’, Journal of Materials Research, 2008, 23, (2), pp. 551-555
26. Chu, R., Poblenz, C., Wong, M.H., Dasgupta, S., Rajan, S., Pei, Y., Recht, F., Shen, L., Speck, J.S., and Mishra, U.K.: ‘Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment’, Applied Physics Express, 2008, 1, pp. 061101
25. Keller, S., Suh, C.S., Fichtenbaum, N.A., Furukawa, M., Chu, R., Chen, Z., Vijayraghavan, K., Rajan, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures’, Journal of Applied Physics, 2008, 104, (9), pp. 093510
24. Wong, M.H., Pei, Y., Chu, R., Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier’, IEEE Electron Device Letters, 2008, 29, (10), pp. 1101-1104
23. Brown, D.F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S.P., and Mishra, U.K.: ‘Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress’, Applied Physics Letters, 2008, 93, (4), pp. 042104
22. Nidhi, Rajan, S., Keller, S., Wu, F., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors’, Journal of Applied Physics, 2008, 103, (12), pp. 124508
21. Vert, A.V., and Rajan, S.: ‘Properties of oxide deposited on c-plane AlGaN/GaN heterostructure’, in Editor (Ed.)^(Eds.): ‘Book Properties of oxide deposited on c-plane AlGaN/GaN heterostructure’ (Institution of Engineering and Technology, 2008, edn.), pp. 773-774
20. Rajan, S., Mishra, U.K., and Palacios, T.S.: ‘AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS’: ‘Frontiers in Electronics’ (WORLD SCIENTIFIC, 2009), pp. 155-164
19. Imer, B., Schmidt, M., Haskell, B., Rajan, S., Zhong, B., Kim, K., Wu, F., Mates, T., Keller, S., Mishra, U.K., Nakamura, S., Speck, J.S., and DenBaars, S.P.: ‘Improved quality nonpolar a -plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)’, physica status solidi (a), 2008, 205, (7), pp. 1705-1712
2007 Publications
18. Rajan, S., Chini, A., Wong, M.H., Speck, J.S., and Mishra, U.K.: ‘N-polar GaN∕AlGaN∕GaN high electron mobility transistors’, Journal of Applied Physics, 2007, 102, (4), pp. 044501
17. Wong, M.H., Rajan, S., Chu, R.M., Palacios, T., Suh, C.S., McCarthy, L.S., Keller, S., Speck, J.S., and Mishra, U.K.: ‘N-face high electron mobility transistors with a GaN-spacer’, physica status solidi (a), 2007, 204, (6), pp. 2049-2053
2006 Publications
16. Rajan, S., DenBaars, S.P., Mishra, U.K., Xing, H., and Jena, D.: ‘Electron mobility in graded AlGaN alloys’, Applied Physics Letters, 2006, 88, (4), pp. 042103
15. Recht, F., McCarthy, L., Rajan, S., Chakraborty, A., Poblenz, C., Corrion, A., Speck, J.S., and Mishra, U.K.: ‘Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature’, IEEE Electron Device Letters, 2006, 27, (4), pp. 205-207
14. Fehlberg, T.B., Umana-Membreno, G.A., Nener, B.D., Parish, G., Gallinat, C.S., Koblmüller, G., Rajan, S., Bernardis, S., and Speck, J.S.: ‘Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy’, Japanese Journal of Applied Physics, 2006, 45, (No. 41), pp. L1090-L1092
13. Simon, J., Wang, A., Xing, H., Rajan, S., and Jena, D.: ‘Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN’, Applied Physics Letters, 2006, 88, (4), pp. 042109
12. Simon, J., Wang, K., Xing, H., Jena, D., and Rajan, S.: ‘Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers’, MRS Proceedings, 2005, 892, pp. 0892-FF0817-0804
11. A. Corrion, C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, J. S. Speck, “Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy,” IEICE Transactions, E89-C (7), pp. 906-912.
2005 Publications
10. Rajan, S., Wong, M., Fu, Y., Wu, F., Speck, J.S., and Mishra, U.K.: ‘Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures’, Japanese Journal of Applied Physics, 2005, 44, (No. 49), pp. L1478-L1480
9. Haijiang, Y., McCarthy, L., Rajan, S., Keller, S., Denbaars, S., Speck, J., and Mishra, U.: ‘Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts’, IEEE Electron Device Letters, 2005, 26, (5), pp. 283-285
8. Poblenz, C., Waltereit, P., Rajan, S., Mishra, U.K., Speck, J.S., Chin, P., Smorchkova, I., and Heying, B.: ‘Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)’, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005, 23, (4), pp. 1562-1567
7. Palacios, T., Rajan, S., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., and Mishra, U.K.: ‘Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs’, IEEE Transactions on Electron Devices, 2005, 52, (10), pp. 2117-2123
6. Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘High-power AlGaN/GaN HEMTs for Ka-band applications’, IEEE Electron Device Letters, 2005, 26, (11), pp. 781-783
2004 Publications
5. Rajan, S., Chakraborty, A., Mishra, U.K., Poblenz, C., Waltereit, P., and Speck, J.S.: ‘MBE-Grown AIGaN/GaN HEMTs on SiC’: ‘High Performance Devices’ (WORLD SCIENTIFIC, 2005), pp. 108-113
4. Rajan, S., Xing, H., DenBaars, S., Mishra, U.K., and Jena, D.: ‘AlGaN/GaN polarization-doped field-effect transistor for microwave power applications’, Applied Physics Letters, 2004, 84, (9), pp. 1591-1593
3. Rajan, S., Waltereit, P., Poblenz, C., Heikman, S.J., Green, D.S., Speck, J.S., and Mishra, U.K.: ‘Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE’, IEEE Electron Device Letters, 2004, 25, (5), pp. 247-249
2. Poblenz, C., Waltereit, P., Rajan, S., Heikman, S., Mishra, U.K., and Speck, J.S.: ‘Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors’, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004, 22, (3), pp. 1145-1149
1. Waltereit, P., Poblenz, C., Rajan, S., Wu, F., Mishra, U.K., and Speck, J.S.: ‘Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors’, Japanese Journal of Applied Physics, 2004, 43, (No. 12A), pp. L1520-L1523