III-Nitride optoelectronics

We are investigating next-generation GaN and AlGaN-based optoelectronics using novel concepts such as interband tunnel junctions, multiple active region emitters, and polarization engineering. Current active projects are focused an achieving tunneling-based cascaded LEDs, and ultraviolet UV LEDs using AlGaN-based tunnel junctions.

Recent publications and presentations

Invited Presentation:

  • Advances in III-Nitride Materials & Photonic Devices (IIIN-MPD), 22nd January 2022. (slides)

Publications:

  1. Zhang, Y., Krishnamoorthy, S., Johnson, J.M., Akyol, F., Allerman, A., Moseley, M.W., Armstrong, A., Hwang, J. and Rajan, S., 2015. Interband tunneling for hole injection in III-nitride ultraviolet emitters. Applied Physics Letters, 106(14), p.141103.
  2. Zhang, Y., Krishnamoorthy, S., Akyol, F., Allerman, A.A., Moseley, M.W., Armstrong, A.M. and Rajan, S., 2016. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions. Applied Physics Letters, 109(12), p.121102.
  3. Akyol, F., Krishnamoorthy, S., Zhang, Y. and Rajan, S., 2015. GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions. Applied Physics Express, 8(8), p.082103.
  4. Krishnamoorthy, S., Nath, D.N., Akyol, F., Park, P.S., Esposto, M. and Rajan, S., 2010. Polarization-engineered GaN/InGaN/GaN tunnel diodes. Applied Physics Letters, 97(20), p.203502.