III-Nitride optoelectronics

We are investigating next-generation GaN and AlGaN-based optoelectronics using novel concepts such as interband tunnel junctions, multiple active region emitters, and polarization engineering. Current active projects are focused an achieving tunneling-based cascaded LEDs, and ultraviolet UV LEDs using AlGaN-based tunnel junctions.

Recent publications and presentations

Invited Presentation:

  • Advances in III-Nitride Materials & Photonic Devices (IIIN-MPD), 22nd January 2022. (slides)


  1. Rahman, S.I., Jamal-Eddine, Z., Xia, Z., Awwad, M., Armitage, R. and Rajan, S., 2022. Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects. Journal of Applied Physics, 132(23), p.235702.
  2. Dominic Merwin Xavier, A.M., Ghosh, A., Rahman, S.I., Allerman, A., Arafin, S. and Rajan, S., 2023. Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions. Applied Physics Letters, 122(8), p.081108.
  3. Rahman, S.I., Jamal-Eddine, Z., Dominic Merwin Xavier, A.M., Armitage, R. and Rajan, S., 2022. III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop. Applied Physics Letters, 121(2), p.021102.