We are investigating next-generation GaN and AlGaN-based optoelectronics using novel concepts such as interband tunnel junctions, multiple active region emitters, and polarization engineering. Current active projects are focused an achieving tunneling-based cascaded LEDs, and ultraviolet UV LEDs using AlGaN-based tunnel junctions.
Recent publications and presentations
- Advances in III-Nitride Materials & Photonic Devices (IIIN-MPD), 22nd January 2022. (slides)
- Rahman, S.I., Jamal-Eddine, Z., Xia, Z., Awwad, M., Armitage, R. and Rajan, S., 2022. Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects. Journal of Applied Physics, 132(23), p.235702.
- Dominic Merwin Xavier, A.M., Ghosh, A., Rahman, S.I., Allerman, A., Arafin, S. and Rajan, S., 2023. Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions. Applied Physics Letters, 122(8), p.081108.
- Rahman, S.I., Jamal-Eddine, Z., Dominic Merwin Xavier, A.M., Armitage, R. and Rajan, S., 2022. III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop. Applied Physics Letters, 121(2), p.021102.