III-Nitride electronics

We are working on making the next generation of III-Nitride electronic devices for applications related to communications, energy efficient power electronics, and extreme-environment logic. We have a range of projects that focus on realizing high-performance GaN devices by harnessing unique transport, heterostructure, and polarization phenomena in these materials. Ongoing projects include ultra-wide band gap high composition AlGaN-channel devices for high frequency applications, graded channel devices for microwave linearity, vertical high voltage GaN-based PN diodes, GaN-based logic, and Gallium Nitride HEMTs for power switching applications.

Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Recent publications and presentations:


  1. , “Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors”, Appl. Phys. Lett. 119, 193501 (2021) https://doi.org/10.1063/5.0070665

  2. Mohammad Wahidur RahmanHareesh ChandrasekarTowhidur RazzakHyunsoo Lee, and Siddharth Rajan 

    , “Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance”, Appl. Phys. Lett. 119, 013504 (2021) https://doi.org/10.1063/5.0055946

  3. Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, and Siddharth Rajan, “Design and Fabrication of Vertical GaN pn Diode With Step-Etched Triple-Zone Junction Termination Extension,” IEEE Transactions on Electron Devices, vol.67, no.9, Sep. 2020
  4. Hyun-Soo Lee, Nidhin Kurian Kalarickal, Mohammad Wahidur Rahman, Zhanbo Xia, Wyatt Moore, Caiyu Wang, and Siddharth Rajan, “High-permittivity dielectric edge termination for vertical high voltage devices“, Journal of Computational Electronics, vol.19, pp.1538-1545, Aug. 2020
  5. Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Hao Xue, Shahadat H. Sohel, Sanyam Bajaj, Yuewei Zhang, Wu Lu, Asif Khan, and Siddharth Rajan,  “Design of compositionally graded contact layers for MOCVD grown high Al-content AIGaN transistors” Applied Physics Letters 115 (4), 043502 (2019)
  6. Hao Xue, Choong Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, and Wu Lu, “AI0.75Ga0.25N/AI0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz” Applied Physics Express 12 (6), 066502 (2019)
  7. Shahadat H Sohel, Andy Xie, Edward Beam, Hao Xue, Towhidur Razzak, Sanyam Bajaj, Yu Cao, Cathy Lee, Wu Lu, and Siddharth Rajan,  IEEE Electron Device Letters 40 (4), 522 (2019)