Beta Gallium Oxide is an exciting material with a large band gap (4.7 eV) that makes it promising for high power electronics applications. Our group investigates the material growth, device design, and electronic properties of these materials. Ongoing projects related to this include study of molecular beam epitaxy techniques to realize Ga2O3 and (Al,Ga)2O3 films, the electronic properties such as transport, doping, and breakdown, radiation effects in Ga2O3, properties of alloys and heterostructures, and demonstration of high-performance device architectures for vertical and lateral devices.
Gallium oxide vertical etching demonstration using Ga flux in MBE
Recent publications and presentations
- -Ga2O3 using atomic gallium flux”, Appl. Phys. Lett. 119, 123503 (2021) , “Planar and three-dimensional damage-free etching of
- N. K. Kalarickal et al., “β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm,” in IEEE Electron Device Letters, vol. 42, no. 6, pp. 899-902, June 2021, doi: 10.1109/LED.2021.3072052.
- Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone, Yumo Liu, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel, and Siddharth Rajan, “High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer”, Journal of Applied Physics 127, 215706 (2020)