Dr. Towhidur Razzak – Design and Fabrication of High Performance Ultra-Wide Bandgap AlGaN Devices
Dr. Md Shahadat Hasan Sohel – III-Nitride Transistors for High Linearity RF Applications
Dr. Zhanbo Xia – Materials and Device Engineering for High Performance β-Ga2O3-based Electronics
Dr. Choong Hee Lee – Synthesis and Properties of Van der Waals-bonded Semiconductor Heterojunctions with Gallium Nitride
Dr. Yuewei Zhang – Tunnel Junction-based Ultra-violet Light Emitting Diodes
Dr. Sanyam Bajaj – Design and Engineering of AlGaN Channel-Based Transistors
Dr. Shubhendu Bhardwaj – Hybrid Numerical Models for Fast Design of Terahertz Plasmonic Devices
Dr. Edwin W. Lee – Growth and Nb-Doping of MoS2 towards Novel 2D/3D Heterojunction Bipolar Transistors
Dr. Faith Akyol – Nanoscale Electron Transport Engineering for GaN Optoelectronic Devices
Dr. Ting-Hsiang Hung – Novel HIgh-k Dielectric Enhanced III-Nitride Devices
Dr. Sriram Krishnamoorthy – Gallium Nitride Based Heterojunction Interband Tunnel Junctions
Dr. Digbijoy Neelim Nath – Advanced polarization engineering of III-nitride heterostructures towards high-speed device applications
Dr. Pil Sung Park – Advanced Channel Engineering in III-Nitride HEMTs for High Frequenct Performance
Dr. Prashanth Ramesh – Smart Materials for Electromagnetic and Opitcal Applications