2020 Presentations
146. Ringel, S., Arehart, A., Ghadi, H., McGlone, J., Farzana, E., Speck, J., Mauze, A., Rajan, S., Kalarickal, N.K., Xia, Z., “Defect Spectroscopy of Ga2O3,” APS March Meeting, 2020, Denver, Colorado
145. Razzak T., Chandrasekar H., Hossain K., Lee C.H., Mamun A., Xue H., Xia Z., Sohel S.H., Rahman M.W., Bajaj S., Wang C., Lu W., Khan A., Rajan S., “Integration of high permittivity dielectrics for enhanced breakdown in III-Nitride devices” WOCSEMMAD (Workshop on Compound Semiconductor Materials and Devices), Feb 16-19, 2020, Palm Springs, California
2019 Presentations
144. Sohel S. H., Razzak T., Xue H., Rahman M. W., Xie A., Beam E., Cao Y., Hussain K., Khan A., Lu W., and Rajan S., “Novel Channel Engineering for High-Performance AlGaN-Based Transistors,“ 236th ECS meeting, 2019, Atlanta, Georgia, USA
142. Zhanbo Xia et. Al. ”BaTiO3/Ga2O3 dielectric heterojunction with breakdown field of 5.7 MV.cm” in DRC, 2019, Ann Arbor, Michigan, USA.
141. Zhanbo Xia et. Al. ” Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz” in Electronic Materials Conference, 2019, Ann Arbor, Michigan, USA.
140. Zhanbo Xia et. Al. “High performance Delta-Doped β-Ga2O3 Field Effect Transistor” WOCCSMAD 2019, Jacksonville Beach, Florida
139. Kalarickal, Nidhin Kurian, Zhanbo Xia, Joe McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, and Siddharth Rajan. “Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3”. NAMBE 2019.
138. Kalarickal, Nidhin Kurian, Zhanbo Xia, Joe Mcglone, Yumo Liu, Wyatt Moore, Aaron Arehart, Steve Ringel, and Siddharth Rajan. “High Electron density beta-(Al0.23Ga0.77)/Ga2O3 modulation doped heterostructures. Electronic Materials Conference 2019.
137. Kalarickal, Nidhin Kurian, Zhanbo Xia, Joe Mcglone, Yumo Liu, Wyatt Moore, Aaron Arehart, Steve Ringel, and Siddharth Rajan. “High electron density beta-(Al0.18Ga0.82)/Ga2O3 modulation doping using ultra-thin (1 nm) spacer layer. International Workshop on Gallium Oxide 2019.
136. Sohel S. H., Razzak T., Xue H., Rahman M. W., Xie A., Beam E., Cao Y., Hussain K., Khan A., Lu W., and Rajan S., “Novel Channel Engineering for High-Performance AlGaN-Based Transistors“, 236th ECS meeting, 2019, Atlanta, Georgia, USA
135. Razzak T., Hossain M. K., Xue H., Lee C. H., Xia Z., Sohel S.H., Bajaj S., Lu W., Khan A., Rajan S., “High Al-composition AlxGa1-xN Channel Transistors for Next Generation RF Applications” WOCSEMMAD (Workshop on Compound Semiconductor Materials and Devices), Feb 17-20, 2019, Jacksonville Beach, Florida
134. T. Niubo-Aleman, Y. Hahn, P. Roblin, J. Teyssier, J.A. Reynoso-Hernandez, V. Chen, S. Rajan, “Calibrated digital predistortion using a vector network analyzer as the receiver” in 2019 93rd ARFTG Microwave Measurement Conference (ARFTG), 2019, pp. 1-4
133. N. Kumar, C. Joishi, Z. Xia, S. Rajan, S. Kumar, “Electro-thermal simulation of delta-doped beta-Ga2O3 field effect transistors” in 18th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), May 2019, pp. 370-375
132. (Invited) A. Armstrong, B.P. Gunning, M.H. Crawford, Z. Jamal-Eddine, S. Rajan, “Solving current droop via tunnel junction cascade LEDs” in Proposed for presentation at the DOE Solid-State Lighting R&D Workshop, Jan 29-31, Dallas TX (2019).
131. (Invited) A. Armstrong, B.P. Gunning, M. H. Crawford, Z. Jamal-Eddine, S. Rajan, “Tunneling-enabled high-efficiency high-power multi junctions LEDs” in Proposed for presentation at the DOE Solid-State Lighting R&D Workshop, Jan 29-31, Dallas, TX (2019).
2018 Presentations
130. Zhanbo Xia , Chandan Joishi, Sriram Krishnamoorthy , Sanyam Bajaj , Yuewei Zhang , Mark Brenner , Saurabh Lodha and Siddharth Rajan, “DC and RF Characteristics of Submicron Delta-Doped β-Ga2 O3 Field Effect Transistors”, Electronic Materials Conference 2018.
129. Hantian Gao , Nick Pronin , Shreyas Muralidharan , Rezaul Karim , Susan M. White , Thaddeus J. Asel , Geoffrey M. Foster , Sriram Krishnamoorthy , Siddharth Rajan , Lei Cao , Holger von Wenckstern , Marius Grundmann , Hongping Zhao , Buguo Wang and Leonard Brillson,” Native Point Defect Identification and Control in Ga2 O3 “, Electronic Materials Conference 2018
128. J. Chen, Z. Xia, S. Rajan and S. Kumar, “Analysis of Thermal Characteristics of Gallium Oxide Field-Effect-Transistors,” 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), San Diego, CA, 2018, pp. 392-397.
127. M. G. Ancona, J. P. Calame, D. J. Meyer, S. Rajan. ” Device Modeling of Graded III-N HEMTs for Improved Linearity” submitted to The International Conference on Simulation of Semiconductor Processes and Devices, Austin, TX, 25 – 27 September 2018.
126. Shahadat H. Sohel, Sanyam Bajaj, Towhidur Razzak, David J. Meyer, and Siddharth Rajan, “Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity,” International Conference on Compound Semiconductor Manufacturing Technology Proceedings, Austin, TX, paper 14.13 (2018).
125. Shahadat H. Sohel, Hao Xue, Towhidur Razzak, Sanyam Bajaj, Yuewei Zhang, Jason A. Roussos, Andy Xie, Edward Beam, Yu Cao, Cathy Lee, David J. Meyer, Wu Lu, Siddharth Rajan, “AlGaN Polarization Graded Field Effect Transistors for High Linearity Microwave Applications,” Electronic Materials Conference, Santa Barbara, CA, 27-29 June 2018.
124. Shahadat H. Sohel, Sanyam Bajaj, Towhidur Razzak, David J. Meyer, and Siddharth Rajan, “Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity,” International Conference on Compound Semiconductor Manufacturing Technology, Austin, TX, 7 – 10 May 2018.
123. Sanyam Bajaj, Zhichao Yang, Fatih Akyol, Pil Sung Park, Yuewei Zhang, Shahadat H. Sohel, Sriram Krishnamoorthy, David J. Meyer and Siddharth Rajan, “Small-Signal Characteristics of Graded AlGaN Channel PolFETs,” Device Research Conference, South Bend, IN, 26 June 2017.
122. T. Razzak, H. Xue, S. Hwang, S. Bajaj, Y. Zhang, Z. Jamal-Eddine, S. H. Sohel, A. Khan, W. Lu and S. Rajan “High Al-Composition AlGaN Channel Polarization-Graded Field-Effect Transistors” 60th Electronic Materials Conference, June 27-29, Santa Barbara, California, USA (2018)
121. T. Razzak, H. Xue, Z. Xia, S. Hwang, A. Khan, S. Rajan, “Ultra Wide Band Gap Semiconductors for High Frequency Applications”, IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
2017 Presentations
120. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Zane Jamal-Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong, Siddharth Rajan, “High efficiency tunnel-injected UV LEDs”, NAMBE 2017. (Best Paper Award)
119. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Jared M.Johnson, Andrew Allerman, Michael W.Moseley, Andrew Armstrong, Jinwoo Hwang, and Siddharth Rajan, “Reflective Metal/Semiconductor Tunnel Junctions for AlGaN UV LEDs”, ISSLED 2017- 11th International Symposium on Semiconductor Light Emitting Devices (Best Paper Award)
118. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Zane Jamal-Eddine, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “High efficiency tunnel-injected deep UV LEDs”, 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France (July 24 -28, 2017). (Talk given by Prof. Rajan)
117. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Zane Jamal-Eddine, Andrew A. Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, “Tunnel-Injected Sub-260 nm Ultraviolet Light Emitting Diodes”, 59th Electronic Materials Conference, 2017.
116. Choong Hee Lee, Sriram Krishnamoorthy, Pran K. Paul, Dante J. O’Hara, Mark R. Brenner, Roland K. Kawakami, Aaron. R. Arehart, Siddharth Rajan, “Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy”, NAMBE 2017 (BEST PAPER AWARD).
115. Dante J. O’Hara, Tiancong Zhu, Amanda H. Trout, Adam S. Ahmed, Yunqiu (Kelly) Luo, Choong Hee Lee, Mark R. Brenner, David W. McComb, Siddharth Rajan, Roland K. Kawakami, “Intrinsic ferromagnetism in epitaxial MnSe2 van der Waals monolayers at room temperature”, 33rd North American Conference on Molecular Beam Epitaxy Oct 15-18 (NAMBE 2017)
114. Choong Hee Lee, Sriram Krishnamoorthy, Pran K. Paul, Dante J. O’Hara, Mark R. Brenner, Roland K. Kawakami, Aaron. R. Arehart, and Siddharth Rajan, “SnSe2 and MoSe2 Grown by Molecular Beam Epitaxy on GaN substrate”,59th Electronic Materials Conference, June 29-30, South Bend, Indiana (2017)
113. S. Bajaj, A. Allerman, F. Akyol, A. Armstrong, T. Razzak, Y. Zhang and S. Rajan, “MOCVD-grown Al0.7Ga0.3N MOSFETs with High Current Density and High Breakdown Field” in Materials Research Society, Fall Meeting, November 27, Boston, MA (2017)
112. Z. Xia, S. Krishnamoorthy, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, and S. Rajan, “Delta-doped β-Ga2O3 Metal Semiconductor Field Effect Transistors with Regrown Ohmic Contacts”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
111. S. Krishnamoorthy, Z. Xia, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, and S. Rajan “Towards Modulation-doped β- (AlGa)2O3/ Ga2O3 Field Effect Transistors for High Frequency Electronics”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
110. S. Bajaj, Z. Yang, F. Akyol, P. S. Park, Y. Zhang, S.H. Sohel, D. J. Meyer, S. Krishnamoorthy and S. Rajan, “Graded AlGaN Channel PolFETs for Improved Current and Power Gain Linearity”, in 12th Topical Workshop on Heterostructure Microelectronics (TWHM), 2017
109. Bajaj S., Yang Z., Akyol F., Park P., Zhang Y., Sohel S., Krishnamoorthy S., Meyer D. & Rajan S. “Small-signal characteristics of graded AlGaN channel PolFETs”, Device Research Conference DRC 2017.
2016 Presentations
108. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, and Siddharth Rajan. “Ultra low resistance GaN/InGaN/GaN tunnel junctions with Indium content<15%.” International Workshop on Nitride Semiconductors, October 2-7, Orlando, FL (2016)
107. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared Johnson, Jinwoo Hwang and Siddharth Rajan. “Ultra low resistance GaN tunnel homojunctions with repeatable differential resistance and 150 kA/cm2 current.” 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
106. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, “Engineering of Hole Transport in Tunneling Injected UV-A LEDs“, International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida.
105. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “Graded P-AlGaN Superlattice for Reduced Electron Overflow in Tunneling Injected UVC LEDs“, 2016 Lester Eastman Conference on High Performance Devices, August 2 – 4, 2016, Bethelehem PA.
104. S. Bajaj, F. Akyol, S. Krishnamoorthy, Y. Zhang, A. Armstrong, A. Allerman, & S. Rajan, “Ultra-Wide Bandgap AlGaN channel MISFET with Low-Resistance Ohmic Contacts” in International Workshop on Nitride Semiconductors, October 2-7, Orlando, FL (2016).
103. S. Bajaj, F. Akyol, Y. Zhang, S. Krishnamoorthy, A. Armstrong, A. Allerman, & S. Rajan, “Heterostructure-Engineered Ohmics-based UBWG Al0.75Ga0.25N Channel MISFET” in IEEE Lester Eastman Conference, Aug 2-4, Bethlehem, PA (2016).
102. S. Bajaj, F. Akyol, S. Krishnamoorthy, Y. Zhang, A. Armstrong, A. Allerman, & S. Rajan, “Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics” in IEEE Device Research Conference (DRC), 74th Annual (2016).
101. S. Bajaj, F. Akyol, S. Krishnamoorthy, Y. Zhang, A. Armstrong, A. Allerman, & S. Rajan, “Heterostructure Engineered Ohmic Contacts to Ultra-Wide Bandgap AlGaN” in 58th Electronic Materials Conference, June 22-24, Newark, Delaware (2016).
100. Sriram Krishnamoorthy, Yuewei Zhang, Edwin Lee, Choong Hee Lee, William McCulloch, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, “Modeling and Demonstration of High Current MoS2/GaN Interband Tunnel Junctions “, International Workshop on Nitride Semiconductors (IWN 2016)
99. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, ” MoS2/ GaN Inter-band Tunnel Junctions (2D / 3D Tunnel Junctions)”, WOCSEMMAD 2016 (Workshop on Compound Semiconductor Materials and Devices).
98. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, “High Current Density p-MoS2/n-GaN Inter-Band 2D/3D Tunnel Junctions”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
97. Choong Hee Lee, Sriram Krishnamoorthy,Dante J. O’Hara, Roberto C. Myers, Roland K. Kawakami and Siddharth Rajan,”Molecular Beam Epitaxy of GaSe on c-Sapphire(0001) Using Valved Se Cracking Source“, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
2015 Presentations
96. Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, “Modeling and Experimental Demonstration of Sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors”, 73rd Device Research Conference (DRC), Columbus, OH.
95. Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, “GaN Tunneling Hot Electron Transistors with Common Emitter Current Gain”, 57th Electronic Materials Conference, Columbus, OH.
94. Edwin W. Lee II, C. H. Lee, P. K. Paul, L. Ma, W. D. McCulloch, S. Krishnamoorthy, Y. Wu, A. R. Arehart, S. Rajan, “Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer”, 11thTopical Workshop on Heterostructure Microelectronics, Takayama, Japan.
93. Edwin W. Lee II, C. H. Lee, P. K. Paul, L. Ma, W. D. McCulloch, S. Krishnamoorthy, Y. Wu, A. R. Arehart, S. Rajan, “Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer”, International Symposium on Compound Semiconductors, University of California-Santa Barbara.
92. Edwin W. Lee II, C. H. Lee, P. K. Paul, L. Ma, W. D. McCulloch, S. Krishnamoorthy, Y. Wu, A. R. Arehart, S. Rajan, “Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer”, 57th Electronic Materials Conference (EMC), The Ohio State University.
91. (Invited) Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol and Siddharth Rajan, “Tunnel Junctions for III-Nitride Ultraviolet Optoelectronics”, 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015.
90. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “Polarization engineered Al0.55Ga0.45N tunnel junctions for ultraviolet emitters”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China (August 30th – September 4th, 2015).
89. (Invited) S. Bajaj, T.-H. Hung, F. Akyol, S. Krishnamoorthy, S. Khandaker, A. Armstrong, A. Allerman and S. Rajan, “Power switching transistors based on GaN and AlGaN channels,” in 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015
88. S. Bajaj, O. F. Shoron, P. S. Park, S. Krishnamoorthy, F. Akyol, T.-H. Hung, S. Reza, E. M. Chumbes, J. Khurgin and S. Rajan, “Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs,” in 11th Topical Workshop on Heterostructure Microelectronics (TWHM), 2015
87. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs“, 73rd Device Research Conference (DRC), June 21-24, 2015.
86. Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson, Fatih Akyol, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang and Siddharth Rajan, “Tunneling Injection of Holes in III-Nitride Ultraviolet Emitters “, 57th Electronic Materials Conference June 24 – 26, 2015.
85. Sriram Krishnamoorthy, Yuewei Zhang, Jared M Johnson, Fatih Akyol, Andrew Allerman, Michael W Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan,” UV Tunnel Junction LEDs” WOCSEMMAD 2015 (Workshop on Compound Semiconductor Materials and Devices) February, 2015
84. Sanyam Bajaj, Omor F Shoron, Pil Sung Park, Sriram Krishnamoorthy, Fatih Akyol, Ting-Hsiang Hung, Shahed Reza, Eduardo M Chumbes, Jacob B Khurgin and Siddharth Rajan, “Density-Dependent Electron Transport for Accurate Modeling of AlGaN/GaN HEMTs“, 73rd Device Research Conference (DRC), June, 2015
83. S. Bajaj, O. F. Shoron, P. S. Park, S. Krishnamoorthy, F. Akyol, T.-H. Hung, S. Reza, E. M. Chumbes, J. Khurgin and S. Rajan, “Density and field dependence of two-dimensional electron gas velocity in GaN,” in 57th Electronic Materials Conference (EMC), 2015
82. Choong Hee Lee, William McCulloch, Edwin W. Lee II, Lu Ma, Sriram Krishnamoorthy, Jinwoo Hwang, Yiying Wu, and Siddharth Rajan, “Transferred large area single crystal MoS2 field effect transistors“, 57th Electronic Materials Conference (EMC), Columbus, OH (2015)
2014 Presentations
81. Edwin W. Lee II, M. R. Laskar, D. N. Nath, L. Ma, C. H. Lee, T. Kent, Z. Yang, R. Mishra, M. A. Roldan, J.-C. Idrobo, S. T. Pantelides, S. J. Pennycook, R. Myers, Y. Wu, S. Rajan, “p-type conductivity in MoS2 by Nb doping”, 56th Electronic Materials Conference (EMC), Univeristy of California-Santa Barbara, June 2014.
80. Edwin W. Lee II, M. R. Laskar, D. N. Nath, L. Ma, C. H. Lee, T. Kent, Z. Yang, O. F. Shoron, R. C. Myers, Y. Wu, S. Rajan, “P-Type Conductivity in MoS2 and WS2 by Nb Doping”, 2014 MRS Spring Meeting, San Francisco, CA, April 2014.
79. Zhichao Yang, Digbijoy N. Nath, Yuewei Zhang, Jacob Kkurgin and Siddharth Rajan, “Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors”, Lester Eastman Conference on High Performance Devices (LEC), Ithaca, NY (2014)
78. Zhichao Yang, Digbijoy N. Nath and Siddharth Rajan, “Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor”, 56th Electronic Materials Conference, Santa Barbara, CA (2014)
77. Zhichao Yang, Digbijoy N. Nath and Siddharth Rajan, “N-polar III-Nitride Tunneling Hot Electron Transfer Amplifier”, 72nd Device Research Conference (DRC), Santa Barbara, CA (2014)
76. Zhichao Yang, Digbijoy N. Nath and Siddharth Rajan, “Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor”, 72nd Device Research Conference (DRC), Santa Barbara, CA (2014)
75. O Shoron, M Boucherit, CA Jackson, TA Cain, MLC Buffon, C Polchinski, S Stemmer, S Rajan, “Modulation of over 10 14 cm− 2 electrons at the SrTiO3/GdTiO3 heterojunction” Device Research Conference (DRC), 2014 72nd Annual
74. Omor F Shoron ,M. Boucherit ,C. A. Jackson ,S. Raghavan ,C. Polchinski ,S. Stemmer ,S. Rajan “Improvement of Charge Modulation in SrTiO3/GdTiO3 HFET” 2014 MRS Spring Meeting and Exhibit
2013 Presentations
73. Digbijoy N. Nath, Zhichao Yang, Pil Sung Park and Siddharth Rajan, “III-nitride tunnel injection hot electron transfer amplifier with common-emitter gain”, International Semiconductor Device Research Symposium, Dec 11-13 (2013) Bethesda, MD
72. Selcu, Camelia, et al. “Investigation of the electronic transport in polarization-induced nanowires using conductive atomic force microscopy (AFM).” APS Meeting Abstracts. Vol. 1. 2013.
71. Overcoming nitride led efficiency droop by tunneling based carrier regeneration
Fatih Akyol, Sriram Krishnamoorthy, and Siddharth Rajan, International Semiconductor Research Conference (ISDRS) December, 2013.
70. MBE growth of N-polar InGaN under N-rich conditions
Fatih Akyol, Masihhur Laskar, Craig Pochinski, and Siddharth Rajan, Electronic Materials Conference 2013.
69. Interface Charge Engineering in GaN-based MIS-HEMTs
Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Neelim Nath, Pil Sung Par and Siddharth
Rajan, The 1st IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA), October 27-29 2013, Columbus OH, USA
68. Demonstration of III-nitride tunnel injection electron transfer amplifier (THETA)”, International Semiconductor Device Research Symposium
Digbijoy N Nath, Zhichao Yang, Pil Sung Park, Siddharth Rajan, Dec 11-13, 2013, Bethesda, MD.
67. Demonstration of III-nitride tunnel injection hot electron transfer amplifier (THETA)
Digbijoy N. Nath, Zhichao Yang, Pil Sung Park, and Siddharth Rajan, 10thInternational Conference on Nitride Semiconductors, August 2013, Washington D. C. (USA)
66. Unipolar vertical transport characteristics of III-nitride heterostructures
Digbijoy N. Nath, C.-Y. Lee, Zhichao Yang, Pil Sung Park, Y.-R. Wu and Siddharth Rajan, 10thInternational Conference on Nitride Semiconductors, August 2013, Washington D. C. (USA) [poster]
65. Percolation-based transport in unipolar III-nitride heterostructures
Digbijoy N. Nath, Pil Sung Park, Zhichao Yang and Siddharth Rajan,55th Electronics Materials Conference, June 25-28 2013, South Bend, IN (USA)
64. SrTiO3/GdTiO3 heterostructure field effect transistors
OF Shoron, M Boucherit, CA Jackson, P Moetakef, S Stemmer, S Rajan 71st Annual Device Research Conference (DRC), 2013 , South Bend, IN
63. III-Nitride Tunnel Junctions: Device Engineering and Applications (Invited)
Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, 10th Topical Workshop on Heterostructure Microelectronics September 2-5, 2013 in Hakodate, Japan
62. Tunnel Injection of Holes in GaN using GdN/GaN heterojunction
Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, 10th International Conference on Nitride Semiconductors, Washington, DC 2013
61. Record High Current Density ( 776 kA/cm2) InGaN/GaN Resonant Tunneling Diodes Using Polarization Induced Barriers
Tyler A Growden, Sriram Krishnamoorthy, Siddharth Rajan and Paul Berger, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
60. Electrical Characterization of MoS2/GaN Heterojunctions
Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
59. Interface charge and electron transport in GaN- Based MIS-HEMTs
Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
58. Growth and Electrical Characterization of MoS2/GaN Heterojunctions
Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN.
57. Single Crystal (0001) Oriented MoS2 by CVD
Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy,Edwin Lee II, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN.
56. Interface charge effects on electron transport in Al2O3/AlGaN/GaN
Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN
55. Incorporation of GaN/InGaN and GdN/GaN tunnel junctions in commercial III-nitride LEDs
Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN
54. Efficient hole injection in GdN/GaN heterojunction
Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN .
53. Interfacial Charge Properties of Atomic Layer Deposited Dielectric/III-nitride Interfaces
Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, MRS Spring meeting 2013, San Fransisco, CA.
52. Study of Interfacial Charge Properties and Engineering of Atomic Layer Deposited Dielectric/III-nitride Interfaces
Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, CS Mantech 2013, New Orleans.
51. CVD-grown Single Crystal Layered MoS2
Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan, MRS Spring meeting 2013, San Fransisco, CA.
2012 Presentations
50. III-Nitride Interband Tunneling Devices
Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, IEEE Lester Eastman Conference on High Performance Devices, Brown University, Aug 7-9 2012
49. GdN nano-islands enabled inter-band tunneling in III- Nitrides
Sriram Krishnamoorthy , Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, Electronic Materials Conference (EMC), June 2012
48. Record low tunnel junction specific resistivity (< 3X10^-4 Ohm cm^2) in GaN inter-band tunnel junctions
Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, Device Research Conference (DRC), 2012 69th Annual , June 2012
47. Methods for Attaining High Interband Tunneling Current in III-Nitrides
Tyler A. Growden, Sriram Krishnamoorthy, Digbijoy Nath, Anisha Ramesh, Siddharth Rajan, and Paul R. Berger,70th Device Research Conference, June 18-20, 2012, University Park, PA (USA)
46. The Efficiency Droop Characteristics of Reversed Polarization (N-polar) GaN Light Emitting Diodes (LEDs)
Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy , Pil Sung Park and Siddharth Rajan, 54th Electronic Materials Conference, June 20-22, 2012 University Park, PA (USA)
45. Study of the interface properties of Atomic Layer Deposited (ALD) Al2O3 on different polarities of GaN with post metal annealing (PMA)
Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan, EMC (Electronic Materials Conference) 2012, June 20-June 22, PA
44. Tunneling in III Nitrides
Siddharth Rajan, WOCSEMMAD 2012, Napa Valley, CA.
43. Electrostatic tuning between 1-dimensional and 2-dimensional electron gases
Digbijoy Nath, Pil Sung Park,Michele Esposto, David Brown, Stacia Keller, Umesh Mishra, Siddharth Rajan, APS (American Physical Society) March 2012 Meeting, February 27–March 2 2012; Boston.
42. Electrostatic carrier doping of GdTiO3/SrTiO3 heterostructures
Pouya Moetakef, Tyler Cain, Daneil Ouellette, Jack Zhang, Clayton Jackson, Siddharth Rajan, James Allen, Susanne Stemmer, APS (American Physical Society) March 2012 Meeting, February 27–March 2 2012; Boston, Massachusetts
41. Characterization of extreme-concentration 2DEGs at the SrTiO3/GdTiO3interface
Clayton Jackson, Pouya Moetakef, Tyler Cain, , Siddharth Rajan, James Allen, Susanne Stemmer, APS (American Physical Society) March 2012 Meeting, February 27–March 2 2012; Boston, Massachusetts
2011 Presentations
41. 1-Dimensional Electron Gas in AlGaN/GaN HEMT by Lateral Polarization Engineering
Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan, 16th International Workshop on Physics of Semiconductor Devices, Dec 19-23, 2011, Kanpur, UP (India)
40. Polarization-Engineered 1-Dimensional Electron Gas Arrays
Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan, MRS (Materials Research Society) Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)
39. Characteristics of N-polar III-Nitride Green Light Emitting Diodes
Fatih Akyol, Digbijoy N. Nath, Pil Sung Park, Sriram Krishnamoorthy and Siddharth Rajan, Materials Research Society 2011 Fall Meeting, Nov 25 – Dec 2, 2011, Boston, MA, USA.
38. Study of Interface Barrier of ALD deposited Al2O3/GaN
Michele Esposto, Sriram Krishnamoorthy, Digbijoy N Nath, Sanyam Bajaj, Ting-Hsiang Hung, and Siddharth Rajan,MRS (Materials Research Society)Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)
37. Enhanced Tunneling in GaN p n Junctions using ultra thin GdN layers
Sriram Krishnamoorthy, Jing Yang, Pil Sung Park, Roberto Myers, and Siddharth Rajan, MRS (Materials Research Society)Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)
36. Polarization-Engineered 1-Dimensional Electron Gas Arrays
Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra, and Siddharth Rajan. AVS (American Vacuum Society) 58th International Symposium, Oct 31-Nov 4, 2011, Nashville, TN (USA)
35. Inter-band GaN/InGaN/GaN tunnel diodes
Sriram Krishnamoorthy, Digbijoy Nath, Sanyam Bajaj, and Siddharth Rajan, AVS (American Vacuum Society) 58th International Symposium, Oct 31-Nov 4, 2011, Nashville, TN (USA)
34. 1-Dimensional Electron Gas in AlGaN/GaN HEMT by Lateral Polarization Engineering
Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan, 9th International Conference on Nitride Semiconductors, July 10-15, 2011, Glasgow, UK [Poster]
33. Flattened transconducatance in highly scaled AlGaN/GaN HEMTs
Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, International Conference on Nitride Semiconductors (ICNS9) 2011, Glasgow, UK
32. III-Nitride Tunnel Diodes with Record Forward Tunnel Current Density
Sriram Krishnamoorthy, Pil Sung Park , and Siddharth Rajan , 69th Device Research Conference (Late News), UC Santa Barbara, 2011.
31. Lateral Confinement of Electrons and Quasi-1D channel based Devices
Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan , Electronic Materials Conference 2011, Santa Barbara, CA.
30. Enhanced Inter-band tunneling by polarization engineering in InGaN/GaN quantum wells
Sriram Krishnamoorthy, Aaron Arehart, Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Steve Ringel, Siddharth Rajan , Electronic Materials Conference 2011, Santa Barbara, CA
29. Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMT Using a Polarization-Induced 2D/3D Hybridized Channel Design
Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, Siddharth Rajan, Electronic Materials Conference 2011, Santa Barbara, CA
28. Defect Characterization of InGaN layer by Deep Level Transient and Optical Spectroscopies
Emre Gur, Sriram Krishnamoorty, Zeng Zhang, Siddharth Rajan, Steven Ringel, Electronic Materials Conference 2011, Santa Barbara, CA
27. Tunneling in III Nitrides (Invited talk)
Siddharth Rajan, and Sriram Krishnamoorthy, WOCSEMMAD 2011, Savannah, GA .
2010 Presentations
26. Design of GaN HEMTs for Power Switching Operation
Michele Esposto, Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy, Fatih Akyol, Valerio De Lecce, Alessandro Chini, and Siddharth Rajan , 19th European Workshop on Heterostructure Technology- HETECH 2010, Crete, Greece .
25. MBE grown 540 nm N Polar LED
Digbijoy Nath, Fatih Akyol, Emre Gur, Pil Sung Park,and Siddharth Rajan , Late Breaking News- International Workshop on Nitrides 2010, Tampa FL .
24. Polarization-engineered GaN/InGaN/GaN tunnel junctions
Sriram Krishnamoorthy, Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, and Siddharth Rajan , Late Breaking News- International Workshop on Nitrides 2010, Tampa FL .
23. Molecular beam epitaxy of N polar InGaN
Digbijoy Nath, Fatih Akyol, Emre Gur, Steve Ringe, and Siddharth Rajan. Electronic Materials Conference 2010, South Bend IN .
2008 Presentations
22. Surface Passivation of AlGaN/GaN HEMTs
Siddharth Rajan, Yi Pei, Zhen Chen, Steve P. DenBaars, and Umesh K. Mishra,Device Research Conference 2008, Santa Barbara CA .
21. Electron Transport in N-polar Vicinal AlGaN/GaN Heterostructure
Siddharth Rajan, Yun-Hao Hsieh, Steve P. DenBaars, James S. Speck and Umesh K. Mishra, Electronic Materials Conference 2008, Santa Barbara CA .
20. Characterization of MOCVD-Grown N-Polar GaN/AlGaN Heterostructures
Nidhi Nidhi; Siddharth Rajan; Stacia Keller; Steven DenBaars; Umesh Mishra. Accepted Electronic Materials Conference 2008, Santa Barbara CA .
19. AlGaN Channel HEMTs Grown by PAMBE: Structural and Device Characterizations
Sansaptak Dasgupta; Ajay Raman; Siddhath Rajan, Umesh Mishra, Accepted Electronic Materials Conference 2008, Santa Barbara CA
18. Gate Leakage Reduction in AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE
Rongming Chu; Christiane Poblenz; Man Hoi Wong; Sansaptak Dasgupta; Siddharth Rajan; Yi Pei; Likun Shen; James Speck; Umesh Mishra, Accepted Electronic Materials Conference 2008, Santa Barbara CA
2007 Presentations
17. Electron Transport in N-polar Vicinal AlGaN/GaN Heterostructures
Siddharth Rajan, Eric Hsieh, Steve P. DenBaars, James S. Speck and Umesh K. Mishra, WOCSEMMAD 2008, Pal Springs, USA, February 2007.
16. Migration-enhanced epitaxy of N-polar Indium Nitride
Siddharth Rajan, Man Hoi Wong, Feng Wu, James S. Speck and Umesh K. Mishra, EMC 2007, Las Vegas, USA, February 2007.
15. Migration-enhanced epitaxy of N-polar Indium Nitride
Siddharth Rajan, Man Hoi Wong, Feng Wu, James S. Speck and Umesh K. Mishra, WOCSEMMAD 2007, Savannah, USA, February 2007.
2006 Presentations
14. Polarization-induced 3-Dimensional slabs in Graded AlGaN layers
John Simon, Siddharth Rajan, Kejia Wang, Huili Xing and Debdeep Jena, to be presented at 2006 MRS Fall Meeting, Boston
2005 Presentations
13. Advanced Transistor Structures Based on N-face GaN
S. Rajan, A. Chini, M. Wong, C. Suh, Y. Fu, M. J. Grundmann, F. Wu, J. S. Speck and U. K. Mishra32nd International Symposium on
Compound Semiconductors (ISCS), Sept 18-22 2005, Europa-Park Rust, Germany
12. N-face Modulation Doped Field Effect Transistors
S. Rajan, F. Wu, M. Wong, Y. Fu, J. S. Speck and U. K. Mishra, 6th International Conference on Nitride Semiconductors (ICNS) 2005, Aug 28- Sept 2 2005, Bremen, Germany.
11. Structural and Electrical Characterization of N-face GaN grown on C-face SiC by MBE
Siddharth Rajan; Feng Wu; Manhoi Wong; Yenyun Fu; James S. Speck; Umesh K. Mishra, 47th Electronic Materials Conference, June 22-24 (2005), Santa Barbara, California USA.
10. Electron Mobility in Graded AlGaN Layers
Siddharth Rajan, Tomas Palacios, Steven P. Denbaars and Umesh K. Mishra, WOCSEMMAD 2005, Miami, USA, February 2005.
9. Dipole Engineering in Nitride-based HEMTs
T. Palacios, S. Rajan, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, 208th Meeting of the Electrochemical Society, Los Angeles, October 16-21 2005
8. An Experimental Method to Identify Bulk and Surface Traps in GaN HEMTs
A. Chini, Y. Fu, S. Rajan, J. S. Speck and U. K. Mishra, 32nd International Symposium on Compound Semiconductors (ISCS), Sept 18-22 2005, Europa-Park Rust, Germany.
7. Fabrication and Characterization of N-face GaN/AlGaN/GaN HEMTs
A. Chini, S. Rajan., M. Wong, Y. Fu, J. S. Speck, U. K. Mishra, 63rd Device Research Conference, June 20-22 (2005), Santa Barbara, California USA
2004 Presentations
6. Progress in the Development of an all-MBE HEMT
Siddharth Rajan, Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S. Speck and Umesh K. Mishra, 11th Advanced Heterostructure Workshop, Hawaii, 2004.
5. MBE-Grown AlGaN/GaN HEMTs on SiC
Siddharth Rajan, Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S. Speck and Umesh K. Mishra, IEEE Lester Eastman Conference on High Performance Devices, August 2004, Troy, NY, USA.
4. Tailoring of Transconductance Profile for Improved Linearity in AlGaN/GaN Polarization- Doped Field Effect Transistors
Siddharth Rajan; Xing, Huili ; Chakraborty, Arpan ; Chini, Alessandro ; Grundmann, Michael J.; Palacios, Tomas ; DenBaars, Steven P.; Jena, Debdeep ; Mishra, Umesh K.., International Workshop on Nitride Semiconductors, July 2004, Pittsburgh, PA, USA.
3. Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs
Yu, H.; McCarthy, L.; Rajan, S.; Keller, S.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.; Device Research Conference, 2004. 62nd DRC. Conference Digest [Late News Papers volume included], 21-23 June 2004 Page(s):37 – 38 vol.1
2. Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs
Palacios, T.; Rajan, S.; Shen, L.; Chakraborty, A.; Heikman, S.; Keller, S.; DenBaars, S.P.; Mishra, U.K, Device Research Conference, 2004. 62nd DRC. Conference Digest 21-23 June 2004 Page(s):75 – 76 vol.1
2003 Presentations
1. Growth and Power Performance of MBE-grown AlGaN/GaN HEMTs
Siddharth Rajan, Patrick Waltereit, Christiane Poblenz, Sten J. Heikman, James S. Speck and Umesh K. Mishra, International Workshop for Physics of Semiconductor Devices (IWPSD), December 2003, Chennai, India.