Publications

  1. “Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3,” E. C. Hettiaratchy, B. Wang, A. Dheenan, J. McGlone, N. K. Kalarickal, N. Bagués, S. Ringel, D. W. McComb, S. Rajan & R. C. Myers. Journal of Vacuum Science & Technology A 40, 062708 (2022). DOI:10.1116/6.0002207
  2. “Ultrafast Nonlinear Absorption and Second Harmonic Generation in Cu0.33In1.30P2S6 van der Waals Layered Crystals,” A. Mushtaq, L. Clink, M. Y. Noor, C. Kuz, E. DeAngelis, R. Siebenaller, A. Fisher, D. Verma, R. C. Myers, B. S. Conner, M. A. Susner & E. Chowdhury. J. Phys. Chem. Lett. 10513–10521 (2022). DOI:10.1021/acs.jpclett.2c02965
  3. “Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection,” H.-S. Lee, M. W. Rahman, D. Verma, V. M. Poole, R. C. Myers, M. D. McCluskey & S. Rajan. Journal of Vacuum Science & Technology B 40, 062201 (2022). DOI:10.1116/6.0002029
  4. “Spectral Measurement of the Breakdown Limit of β−Ga2O3 and Tunnel Ionization of Self-Trapped Excitons and Holes,” Md. M. R. Adnan, D. Verma, Z. Xia, N. K. Kalarickal, S. Rajan & R. C. Myers. Phys. Rev. Applied 16, 034011 (2021). DOI:10.1103/physrevapplied.16.034011
  5. “Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy,” D. Verma, M. M. R. Adnan, M. W. Rahman, S. Rajan & R. C. Myers. Applied Physics Letters 116, 202102–202102 (2020). DOI:10.1063/1.5144778
  6. “Molecular beam epitaxy of GaN on 2H–MoS 2,” C. H. Lee, Y. Zhang, J. M. Johnson, R. Koltun, V. Gambin, J. S. Jamison, R. C. Myers, J. Hwang & S. Rajan. Applied Physics Letters 117, 123102–123102 (2020). DOI:10.1063/5.0012682
  7. “Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation,” C. Joishi, Z. Xia, J. S. Jamison, S. H. Sohel, R. C. Myers, S. Lodha & S. Rajan. IEEE Transactions on Electron Devices 67, 4813–4819 (2020). DOI:10.1109/ted.2020.3023679
  8. “Interface-induced ferromagnetism in μ-Fe₂O₃/β-Ga₂O₃ superlattices,” E. C. Hettiaratchy, J. S. Jamison, B. Wang, N. Bagués, R. A. Guest, D. W. McComb & R. C. Myers. Journal of Vacuum Science & Technology A 38, 063413 (2020). DOI:10.1116/6.0000612
  9. “Excimer-Mediated Intermolecular Charge Transfer in Self-Assembled Donor–Acceptor Dyes on Metal Oxides,” Y. Yu, S.-C. Chien, J. Sun, E. C. Hettiaratchy, R. C. Myers, L.-C. Lin & Y. Wu. Journal of the American Chemical Society 141, 8727–8731 (2019). DOI:10.1021/jacs.9b03729
  10. “Controlled nucleation of monolayer MoSe2 islands on Si (111) by MBE,” B. J. May, E. C. Hettiaratchy & R. C. Myers. Journal of Vacuum Science & Technology B 37, 021211–021211 (2019). DOI:10.1116/1.5087212
  11. “Long lifetime of thermally excited magnons in bulk yttrium iron garnet,” J. S. Jamison, Z. Yang, B. L. Giles, J. T. Brangham, G. Wu, P. C. Hammel, F. Yang & R. C. Myers. Physical Review B 100, 134402–134402 (2019). DOI:10.1103/physrevb.100.134402
  12. “Ferromagnetic Epitaxial μ-Fe₂O₃ on β-Ga₂O₃: A New Monoclinic form of Fe₂O₃,” J. S. Jamison, B. J. May, J. I. Deitz, S.-C. Chien, D. W. McComb, T. J. Grassman, W. Windl & R. C. Myers. Crystal Growth & Design 19, 4205–4211 (2019). DOI:10.1021/acs.cgd.9b00029
  13. “Methods for forming nanowire photonic devices on a flexible polycrystalline substrate,” R. C. Myers, B. J. May & A. T. M. G. Sarwar. (2018).
  14. “Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes,” B. J. May, C. M. Selcu, A. T. M. G. Sarwar & R. C. Myers. Applied Physics Letters 112, 093107–093107 (2018). DOI:10.1063/1.5020734
  15. “Simultaneous molecular beam epitaxy growth at multiple uniform substrate temperatures,” B. J. May & R. C. Myers. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36, 011203–011203 (2018). DOI:10.1116/1.5008523
  16. “Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency,” B. J. May, M. R. Belz, A. Ahamed, A. T. M. G. Sarwar, C. M. Selcu & R. C. Myers. ACS Nano 12, 3551–3556 (2018). DOI:10.1021/acsnano.8b00538
  17. “Nonlocal Spin Transport Mediated by a Vortex Liquid in Superconductors,” S. K. Kim, R. Myers & Y. Tserkovnyak. Physical Review Letters 121, 187203–187203 (2018). DOI:10.1103/physrevlett.121.187203
  18. “Hexagonal nano-pyramidal-prisms of nearly intrinsic InN on patterned GaN nanowire arrays,” A. T. M. Golam Sarwar, B. Leung, G. T. Wang & R. C. Myers. Crystal Growth & Design 18, 1191–1197 (2018). DOI:10.1021/acs.cgd.7b01725
  19. “Nano-Cathodoluminescence Measurement of Asymmetric Carrier Trapping and Radiative Recombination in GaN and InGaN Quantum Disks,” J. I. Deitz, A. T. M. G. Sarwar, S. D. Carnevale, T. J. Grassman, R. C. Myers & D. W. McComb. Microscopy and Microanalysis 24, 93–98 (2018). DOI:10.1017/s143192761800017x
  20. “Scalable Nernst thermoelectric power using a coiled galfenol wire,” Z. Yang, E. A. Codecido, J. Marquez, Y. Zheng, J. P. Heremans & R. C. Myers. AIP Advances 7, 095017 (2017). DOI:10.1063/1.5003611
  21. “Three-dimensional lattice matching of epitaxially embedded nanoparticles,” B. J. May, P. M. Anderson & R. C. Myers. Journal of Crystal Growth 459, 209–214 (2017). DOI:10.1016/j.jcrysgro.2016.11.042
  22. “Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates,” C. H. Lee, S. Krishnamoorthy, D. J. O’Hara, M. R. Brenner, J. M. Johnson, J. S. Jamison, R. C. Myers, R. K. Kawakami, J. Hwang & S. Rajan. Journal of Applied Physics 121, 094302–094302 (2017). DOI:10.1063/1.4977697
  23. “Thermally driven long-range magnon spin currents in yttrium iron garnet due to intrinsic spin Seebeck effect,” B. L. Giles, Z. Yang, J. S. Jamison, J. M. Gomez-Perez, S. Vélez, L. E. Hueso, F. Casanova & R. C. Myers. Physical Review B 96, 180412–180412 (2017). DOI:10.1103/physrevb.96.180412
  24. “Effect of quantum well shape and width on deep ultraviolet emission in AlGaN nanowire LEDs,” A. T. M. G. T. M. G. Sarwar, B. J. May & R. C. Myers. physica status solidi (a) 213, 947–952 (2016). DOI:10.1002/pssa.201532735
  25. “Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy,” A. T. M. G. Sarwar, F. Yang, B. D. Esser, T. F. Kent, D. W. McComb & R. C. Myers. Journal of Crystal Growth 443, 90–97 (2016). DOI:10.1016/j.jcrysgro.2016.03.030
  26. “Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence,” A. T. M. G. Sarwar, B. J. May, M. F. Chisholm, G. J. Duscher & R. C. Myers. Nanoscale 8, 8024–8032 (2016). DOI:10.1039/c6nr00132g
  27. “Nanoscale emitters with polarization grading,” R. C. Myers & S. Rajan. (2016).
  28. “Gd doped AlGaN ultraviolet light emitting diode,” R. C. Myers & T. F. Kent. (2016).
  29. “Compound Semiconductors,” U. Mishra, D. Huffaker, K. Choquette, T. Palacios, E. Matioli, R. Myers, S. Rajan & H. Wang. physica status solidi (a) 213, 850–850 (2016). DOI:10.1002/pssa.201670627
  30. “Nanowire LEDs grown directly on flexible metal foil,” B. J. May, A. T. M. G. Sarwar & R. C. Myers. Appl. Phys. Lett. 108, 141103 (2016). DOI:10.1063/1.4945419
  31. “Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses,” Z. Yang, T. F. Kent, J. Yang, H. Jin, J. P. Heremans & R. C. Myers. Physical Review B 92, 224416–224416 (2015). DOI:10.1103/physrevb.92.224416
  32. “Tunnel junction integrated ultraviolet nanowire LEDs,” A. G. Sarwar, B. J. May & R. C. Myers. in 2015 73rd Annual Device Research Conference (DRC) vols. 2015-Augus 71–72 (IEEE, 2015). DOI:10.1109/drc.2015.7175561
  33. “Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates,” A. G. Sarwar, B. J. May & R. C. Myers. in 2015 IEEE Summer Topicals Meeting Series (SUM) 125–126 (IEEE, 2015). DOI:10.1109/phosst.2015.7248229
  34. “Tunnel junction enhanced nanowire ultraviolet light emitting diodes,” A. T. M. G. Sarwar, B. J. May, J. I. Deitz, T. J. Grassman, D. W. McComb & R. C. Myers. Applied Physics Letters 107, (2015). DOI:10.1063/1.4930593
  35. “Electronic Structure and Photocatalytic Water Oxidation Activity of R TiNO 2 ( R = Ce, Pr, and Nd) Perovskite Nitride Oxides,” S. H. Porter, Z. Huang, S. Dou, S. Brown-Xu, A. T. M. Golam Sarwar, R. C. Myers & P. M. Woodward. Chemistry of Materials 27, 2414–2420 (2015). DOI:10.1021/cm5044599
  36. “Phonon-induced diamagnetic force and its effect on the lattice thermal conductivity,” H. Jin, O. D. Restrepo, N. Antolin, S. R. Boona, W. Windl, R. C. Myers & J. P. Heremans. Nature Materials 14, 601–606 (2015). DOI:10.1038/nmat4247
  37. “Effect of the magnon dispersion on the longitudinal spin Seebeck effect in yttrium iron garnets,” H. Jin, S. R. Boona, Z. Yang, R. C. Myers & J. P. Heremans. Physical Review B – Condensed Matter and Materials Physics 92, 054436–054436 (2015). DOI:10.1103/physrevb.92.054436
  38. “Molecular beam epitaxy of InN nanowires on Si,” A. T. M. Golam Sarwar, S. D. Carnevale, T. F. Kent, M. R. Laskar, B. J. May & R. C. Myers. Journal of Crystal Growth 428, 59–70 (2015). DOI:10.1016/j.jcrysgro.2015.07.024
  39. “Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN,” A. T. M. Golam Sarwar, S. D. Carnevale, T. F. Kent, F. Yang, D. W. McComb & R. C. Myers. Applied Physics Letters 106, 032102–032102 (2015). DOI:10.1063/1.4906449
  40. “Long-range pure magnon spin diffusion observed in a nonlocal spin-Seebeck geometry,” B. L. Giles, Z. Yang, J. S. Jamison & R. C. Myers. Physical Review B 92, 224415–224415 (2015). DOI:10.1103/physrevb.92.224415
  41. “Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires,” N. Erhard, A. T. M. G. Sarwar, F. Yang, D. W. McComb, R. C. Myers & A. W. Holleitner. Nano Letters 15, 332–338 (2015). DOI:10.1021/nl503616w
  42. “Electron Energy Loss Spectroscopy and Localized Cathodoluminescence Characterization of GaN Quantum Discs,” R. E. A. Williams, S. D. Carnevale, Thomas. F. Kent, D. J. Stowe, R. C. Myers & D. W. McComb. Microscopy and Microanalysis 20, 578–579 (2014). DOI:10.1017/s1431927614004619
  43. “Catalyst-free ZnO nanowires on silicon by pulsed laser deposition with tunable density and aspect ratio,” M. A. Susner, S. D. Carnevale, T. F. Kent, L. M. Gerber, P. J. Phillips, M. D. Sumption & R. C. Myers. Physica E: Low-dimensional Systems and Nanostructures 62, 95–103 (2014). DOI:10.1016/j.physe.2014.04.023
  44. “p-type doping of MoS2 thin films using Nb,” M. R. Laskar, D. N. Nath, L. Ma, E. W. Lee, C. H. Lee, T. Kent, Z. Yang, R. Mishra, M. A. Roldan, J.-C. Idrobo, S. T. Pantelides, S. J. Pennycook, R. C. Myers, Y. Wu & S. Rajan. Applied Physics Letters 104, 092104–092104 (2014). DOI:10.1063/1.4867197
  45. “Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions,” T. F. Kent, S. D. Carnevale, A. T. M. Sarwar, P. J. Phillips, R. F. Klie & R. C. Myers. Nanotechnology 25, 455201–455201 (2014). DOI:10.1088/0957-4484/25/45/455201
  46. “Spin-Seebeck like signal in ferromagnetic bulk metallic glass without platinum contacts,” H. Jin, Z. Yang, R. C. Myers & J. P. Heremans. Solid State Communications 198, 40–44 (2014). DOI:10.1016/j.ssc.2013.12.027
  47. “Compositionally Graded III-Nitride Nanowire Heterostructures: Growth, Characterization, and Applications,” S. D. Carnevale & R. C. Myers. in Handbook of Nanomaterials Properties 85–119 (Springer Berlin Heidelberg, 2014). DOI:10.1007/978-3-642-31107-9_17
  48. “Spin caloritronics,” S. R. Boona, R. C. Myers & J. P. Heremans. Energy & Environmental Science 7, 885–885 (2014). DOI:10.1039/c3ee43299h
  49. “Semipolar InN/AlN multiple quantum wells on {101¯5} faceted AlN on silicon,” J. Yang, F. Yang, T. F. Kent, M. J. Mills & R. C. Myers. Applied Physics Letters 103, 121105–121105 (2013). DOI:10.1063/1.4821069
  50. “Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures,” Y. Shao, S. D. Carnevale, A. T. M. G. Sarwar, R. C. Myers & W. Lu. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31, 06FA03-06FA03 (2013). DOI:10.1116/1.4829432
  51. “Full-Scale Characterization of UVLED AlxGa1– xN Nanowires via Advanced Electron Microscopy,” P. J. Phillips, S. D. Carnevale, R. Kumar, R. C. Myers & R. F. Klie. ACS Nano 7, 5045–5051 (2013). DOI:10.1021/nn4021407
  52. “Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires,” M. R. Laskar, S. D. Carnevale, A. T. M. G. Sarwar, P. J. Phillips, M. J. Mills & R. C. Myers. Journal of Electronic Materials 42, 863–867 (2013). DOI:10.1007/s11664-013-2544-9
  53. “GdN Nanoisland-Based GaN Tunnel Junctions,” S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers & S. Rajan. Nano Letters 13, 2570–2575 (2013). DOI:10.1021/nl4006723
  54. “Atomically sharp 318 nm Gd:AlGaN ultraviolet light emitting diodes on Si with low threshold voltage,” T. F. Kent, S. D. Carnevale & R. C. Myers. Applied Physics Letters 102, 201114–201114 (2013). DOI:10.1063/1.4807385
  55. “Ferromagnetism and infrared electrodynamics of Ga1-xMnxAs,” B. C. Chapler, S. Mack, R. C. Myers, A. Frenzel, B. C. Pursley, K. S. Burch, A. M. Dattelbaum, N. Samarth, D. D. Awschalom & D. N. Basov. Physical Review B – Condensed Matter and Materials Physics 87, 205314–205314 (2013). DOI:10.1103/physrevb.87.205314
  56. “Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes,” S. D. Carnevale, T. F. Kent, P. J. Phillips, A. T. M. G. Sarwar, C. Selcu, R. F. Klie & R. C. Myers. Nano Letters 13, 3029–3035 (2013). DOI:10.1021/nl400200g
  57. “Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy,” Z. Zhang, C. A. Hurni, A. R. Arehart, J. Yang, R. C. Myers, J. S. Speck & S. A. Ringel. Applied Physics Letters 100, 1–5 (2012). DOI:10.1063/1.3682528
  58. “Spin-Heat Vision,” R. Myers & J. Heremans. Physics 5, 29–29 (2012). DOI:10.1103/physics.5.29
  59. “Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions,” S. Krishnamoorthy, F. Akyol, J. Yang, P. S. Park, R. C. Myers & S. Rajan. in 70th Device Research Conference 157–158 (IEEE, 2012). DOI:10.1109/drc.2012.6257007
  60. “Epitaxial ferromagnetic nanoislands of cubic GdN in hexagonal GaN,” T. F. Kent, J. Yang, L. Yang, M. J. Mills & R. C. Myers. Applied Physics Letters 100, 152111–152111 (2012). DOI:10.1063/1.3702843
  61. “Giant spin Seebeck effect in a non-magnetic material,” C. M. Jaworski, R. C. Myers, E. Johnston-Halperin & J. P. Heremans. Nature 487, 210–213 (2012). DOI:10.1038/nature11221
  62. “Exploiting piezoelectric charge for high performance graded InGaN nanowire solar cells,” A. T. M. Golam Sarwar & R. C. Myers. Applied Physics Letters 101, 143905–143905 (2012). DOI:10.1063/1.4757990
  63. “Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence,” S. D. Carnevale, T. F. Kent, P. J. Phillips, M. J. Mills, S. Rajan & R. C. Myers. Nano Letters 12, 915–920 (2012). DOI:10.1021/nl203982p
  64. “Graded nanowire ultraviolet LEDs by polarization engineering,” S. D. Carnevale, T. F. Kent, P. J. Phillips, A. T. M. G. Sarwar, R. F. Klie, S. Rajan & R. C. Myers. in Proceedings of SPIE – The International Society for Optical Engineering (eds. Kobayashi, N. P., Talin, A. A. & Islam, M. S.) vol. 8467 84670L-84670L (2012). DOI:10.1117/12.970450
  65. “Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon,” S. D. Carnevale, C. Marginean, P. J. Phillips, T. F. Kent, A. T. M. G. Sarwar, M. J. Mills & R. C. Myers. Applied Physics Letters 100, 142115–142115 (2012). DOI:10.1063/1.3701586
  66. “A Gadolinium Doped Superlattice GaN Schottky Diode for Neutron Detection,” J. Wang, P. Kandlakunta, T. F. Kent, J. Carlin, D. R. Hoy, R. C. Myers & L. Cao. Transactions of the American Nuclear Society 104, 209–210 (2011). 66. “Spin-Seebeck Effect: A Phonon Driven Spin Distribution,” C. M. Jaworski, J. Yang, S. Mack, D. D. Awschalom, R. C. Myers & J. P. Heremans. Physical Review Letters 106, 186601–186601 (2011). DOI:10.1103/physrevlett.106.186601
  67. “Infrared probe of the insulator-to-metal transition in Ga1-xMnxAs and Ga1-xBexAs,” B. C. Chapler, R. C. Myers, S. Mack, A. Frenzel, B. C. Pursley, K. S. Burch, E. J. Singley, A. M. Dattelbaum, N. Samarth, D. D. Awschalom & D. N. Basov. Physical Review B 84, 81203–81203 (2011). DOI:10.1103/physrevb.84.081203
  68. “Three-Dimensional GaN/AlN Nanowire Heterostructures by Separating Nucleation and Growth Processes,” S. D. Carnevale, J. Yang, P. J. Phillips, M. J. Mills & R. C. Myers. Nano Letters 11, 866–871 (2011). DOI:10.1021/nl104265u
  69. “Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures,” M. J. Wilson, M. Zhu, R. C. Myers, D. D. Awschalom, P. Schiffer & N. Samarth. Physical Review B 81, 045319–045319 (2010). DOI:10.1103/physrevb.81.045319
  70. “Observation of the spin-Seebeck effect in a ferromagnetic semiconductor,” C. M. Jaworski, J. Yang, S. Mack, D. D. Awschalom, J. P. Heremans & R. C. Myers. Nature Materials 9, 898–903 (2010). DOI:10.1038/nmat2860
  71. “Polarized Emission From Twin Microdisk Photonic Molecules,” X. Li, R. C. Myers, F. M. Mendoza, D. D. Awschalom & N. Samarth. IEEE Journal of Quantum Electronics 45, 932–936 (2009). DOI:10.1109/jqe.2009.2015893
  72. “Zero-field optical manipulation of magnetic ions in semiconductors,” R. C. Myers, M. H. Mikkelsen, J.-M. Tang, A. C. Gossard, M. E. Flatté & D. D. Awschalom. Nature Materials 7, 339–339 (2008). DOI:10.1038/nmat2158
  73. “Single Spin Coherence in Semiconductors,” M. H. Mikkelsen, R. C. Myers, G. D. Fuchs & D. D. Awschalom. in Semiconductors and Semimetals vol. 82 1–44 (2008). DOI:10.1016/S0080-8784(08)00001-X
  74. “Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs,” S. Mack, R. C. Myers, J. T. Heron, A. C. Gossard & D. D. Awschalom. Applied Physics Letters 92, 192502–192502 (2008). DOI:10.1063/1.2927481
  75. “Confinement engineering of Ga 1 − x Mn x As / Al y Ga 1 − y As quantum wells,” N. P. Stern, R. C. Myers, M. Poggio, A. C. Gossard & D. D. Awschalom. Physical Review B 75, 045329–045329 (2007). DOI:10.1103/physrevb.75.045329
  76. “Onset of ferromagnetism in low-doped Ga1-xMnxAs,” B. L. Sheu, R. C. Myers, J. M. Tang, N. Samarth, D. D. Awschalom, P. Schiffer & M. E. Flatté. Physical Review Letters 99, 227205–227205 (2007). DOI:10.1103/physrevlett.99.227205
  77. “Spin Engineering in Quantum Well Structures,” R. C. Myers & A. C. Gossard. in Handbook of Magnetism and Advanced Magnetic Materials (John Wiley & Sons, Ltd, 2007). DOI:10.1002/9780470022184.hmm528
  78. “Dimensionally constrained D’yakonov-Perel’ spin relaxation in n-lnGaAs channels: Transition from 2D to 1D,” A. W. Holleitner, V. Sih, R. C. Myers, A. C. Gossard & D. D. Awschalom. New Journal of Physics 9, 1–12 (2007). DOI:10.1088/1367-2630/9/9/342
  79. “Enhancement of Spin Coherence in Microdisk Lasers,” S. Ghosh, F. Mendoza, R. Myers, A. C. Gossard, D. D. Awschalom, W.-H. Wang, X. Li & N. Samarth. in International Conference on Quantum Information JWC45–JWC45 (OSA, 2007). DOI:10.1364/icqi.2007.jwc45
  80. “Generating Spin Currents in Semiconductors with the Spin Hall Effect,” V. Sih, W. H. Lau, R. C. Myers, V. R. Horowitz, A. C. Gossard & D. D. Awschalom. Physical Review Letters 97, 096605–096605 (2006). DOI:10.1103/physrevlett.97.096605
  81. “Nuclear and ion spins in semiconductor nanostructures,” M. Poggio, R. C. Myers, G. M. Steeves, N. P. Stern, A. C. Gossard & D. D. Awschalom. Physica E: Low-dimensional Systems and Nanostructures 35, 264–271 (2006). DOI:10.1016/j.physe.2006.08.032
  82. “Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As,” R. C. Myers, B. L. Sheu, A. W. Jackson, A. C. Gossard, P. Schiffer, N. Samarth & D. D. Awschalom. Physical Review B 74, 155203–155203 (2006). DOI:10.1103/physrevb.74.155203
  83. “Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells,” W. H. Lau, V. Sih, N. P. Stern, R. C. Myers, D. A. Buell, A. C. Gossard & D. D. Awschalom. Applied Physics Letters 89, 142104–142104 (2006). DOI:10.1063/1.2358931
  84. “Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers,” H. Knotz, A. W. Holleitner, J. Stephens, R. C. Myers & D. D. Awschalom. Applied Physics Letters 88, 1–11 (2006). DOI:10.1063/1.2210794
  85. “Suppression of Spin Relaxation in Submicron InGaAs Wires,” A. W. Holleitner, V. Sih, R. C. Myers, A. C. Gossard & D. D. Awschalom. Physical Review Letters 97, 036805–036805 (2006). DOI:10.1103/physrevlett.97.036805
  86. “Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers,” S. Ghosh, W. H. Wang, F. M. Mendoza, R. C. Myers, X. Li, N. Samarth, A. C. Gossard & D. D. Awschalom. Nature Materials 5, 261–264 (2006). DOI:10.1038/nmat1587
  87. “Tunneling through MnAs particles at a GaAs p+n+ junction,” F. L. Bloom, A. C. Young, R. C. Myers, E. R. Brown, A. C. Gossard & E. G. Gwinn. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, 1639–1639 (2006). DOI:10.1116/1.2190680
  88. “Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases,” V. Sih, R. C. Myers, Y. K. Kato, W. H. Lau, A. C. Gossard & D. D. Awschalom. Nature Physics 1, 31–35 (2005). DOI:10.1038/nphys009
  89. “Local manipulation of nuclear spin in a semiconductor quantum well,” M. Poggio, G. M. Steeves, R. C. Myers, Y. Kato, A. C. Gossard & D. D. Awschalom. in International Quantum Electronics Conference, 2005. vol. 2005 511–511 (IEEE, 2005). DOI:10.1109/iqec.2005.1560929
  90. “Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells,” M. Poggio, R. C. Myers, N. P. Stern, A. C. Gossard & D. D. Awschalom. Physical Review B – Condensed Matter and Materials Physics 72, (2005). DOI:10.1103/physrevb.72.235313
  91. “Antiferromagnetic s-d Exchange Coupling in GaMnAs,” R. C. Myers, M. Poggio, N. P. Stern, A. C. Gossard & D. D. Awschalom. Physical Review Letters 95, 017204–017204 (2005). DOI:10.1103/physrevlett.95.017204
  92. “Optoelectronic control of spin dynamics at near-terahertz frequencies in magnetically doped quantum wells,” R. C. Myers, K. C. Ku, X. Li, N. Samarth & D. D. Awschalom. Physical Review B 72, 041302–041302 (2005). DOI:10.1103/physrevb.72.041302
  93. “Electron spin interferometry using a semiconductor ring structure,” Y. K. Kato, R. C. Myers, A. C. Gossard & D. D. Awschalom. Applied Physics Letters 86, 162107–162107 (2005). DOI:10.1063/1.1906301
  94. “Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel,” Y. K. Kato, R. C. Myers, A. C. Gossard & D. D. Awschalom. Applied Physics Letters 87, 022503–022503 (2005). DOI:10.1063/1.1994930
  95. “Manipulating a domain wall in (Ga,Mn)As,” A. W. Holleitner, H. Knotz, R. C. Myers, A. C. Gossard & D. D. Awschalom. Journal of Applied Physics 97, 10D314-10D314 (2005). DOI:10.1063/1.1849055
  96. “Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas,” V. Sih, W. H. Lau, R. C. Myers, A. C. Gossard, M. E. Flatté & D. D. Awschalom. Physical Review B – Condensed Matter and Materials Physics 70, 1–4 (2004). DOI:10.1103/physrevb.70.161313
  97. “Spin transfer and coherence in coupled quantum wells,” M. Poggio, G. M. Steeves, R. C. Myers, N. P. Stern, A. C. Gossard & D. D. Awschalom. Physical Review B 70, 121305–121305 (2004). DOI:10.1103/physrevb.70.121305
  98. “Tunable spin polarization in III-V quantum wells with a ferromagnetic barrier,” R. C. Myers, A. C. Gossard & D. D. Awschalom. Physical Review B 69, 161305–161305 (2004). DOI:10.1103/physrevb.69.161305
  99. “Coherent spin manipulation without magnetic fields in strained semiconductors,” Y. Kato, R. C. Myers, A. C. Gossard & D. D. Awschalom. Nature 427, 50–53 (2004). DOI:10.1038/nature02202
  100. “Observation of the Spin Hall Effect in Semiconductors,” Y. K. Kato, R. C. Myers, A. C. Gossard & D. D. Awschalom. Science 306, 1910–1913 (2004). DOI:10/fgsr2g
  101. “Current-Induced Spin Polarization in Strained Semiconductors,” Y. K. Kato, R. C. Myers, A. C. Gossard & D. D. Awschalom. Physical Review Letters 93, 176601–176601 (2004). DOI:10.1103/physrevlett.93.176601
  102. “Pinning a domain wall in (Ga,Mn)As with focused ion beam lithography,” A. W. Holleitner, H. Knotz, R. C. Myers, A. C. Gossard & D. D. Awschalom. Applied Physics Letters 85, 5622–5624 (2004). DOI:10.1063/1.1829797
  103. “Local Manipulation of Nuclear Spin in a Semiconductor Quantum Well,” M. Poggio, G. M. Steeves, R. C. Myers, Y. Kato, A. C. Gossard & D. D. Awschalom. Physical Review Letters 91, 207602–207602 (2003). DOI:10.1103/physrevlett.91.207602
  104. “Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers,” K. C. Ku, S. J. Potashnik, R. F. Wang, S. H. Chun, P. Schiffer, N. Samarth, M. J. J. Seong, A. Mascarenhas, E. Johnston-Halperin, R. C. Myers, A. C. Gossard & D. D. Awschalom. Applied Physics Letters 82, 2302–2304 (2003). DOI:10.1063/1.1564285
  105. “Gigahertz manipulation of electron spins in semiconductor nanostructures,” Y. Kato, R. C. Myers, D. C. Driscoll, A. C. Gossard, J. Levy & D. D. Awschalom. in 2003 International Symposium on Compound Semiconductors vols. 2003-Janua 3–3 (IEEE, 2003). DOI:10.1109/iscs.2003.1239876
  106. “Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation,” Y. Kato, R. C. Myers, D. C. Driscoll, A. C. Gossard, J. Levy & D. D. Awschalom. Science 299, 1201–1204 (2003). DOI:10.1126/science.1080880
  107. “Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures,” E. Johnston-Halperin, J. A. Schuller, C. S. Gallinat, T. C. Kreutz, R. C. Myers, R. K. Kawakami, H. Knotz, A. C. Gossard & D. D. Awschalom. Physical Review B 68, 165328–165328 (2003). DOI:10.1103/physrevb.68.165328