2D Materials MBE System

dreese chamber small

The Semiconductor Epitaxy and Analysis Laboratory (SEAL) facility is home to five different MBE chambers, a microelectronics cleanroom and various other equipment. Our group, along with Profs. Rajan and Myers of the ECE and MSE departments at OSU, are primarily utilizing a Veeco GEN930 MBE system equipped with a Se valved cracking source to synthesize Se-based two-dimensional (2D) materials such as MoSe2 and WSe2. Our goal is to develop 2D magnetic semiconductors such as, transition metal trichalcogenides (TMTs) (e.g. CrGeTe3) and also study how magnetic impurities (i.e. Mn) can affect the magnetic properties of transition metal chalcogenides. This MBE chamber is equipped with Raman and photoluminescence spectroscopy for in situ characterization.

  • Acquisition and development of this instrument was supported by the NSF MRI program (DMR-1429143)

| Facilities | 2D Materials MBE System