144. “Defect Manipulation to Control Energy Processes in Electronic Materials,” presented at the AVS 66th International Symposium & Exhibition, Columbus, OH, October 22, 2019.
143. “Nanoscale Identification and Control of Native Point Defects in TCO Semiconductors,” presented at the 2019 Transparent Conducting Oxide Workshop (TCO2019), Leipzig, Germany, September 26, 2019.
142. “Nanoscale 3-Dimensional Characterization of Wide Bandgap Power and Microdevices,” presented at the 2019 International Conference on Solid State Devices and Materials (SSDM2019), Nagoya, Aichi, Japan, September 3, 2019.
141. “Nanoscale Control of Native Point Defects and Doping in Oxide Semiconductors,” presented at the German Physical Society Meeting, Regensburg, Germany, April 1, 2019.
140. “Probing the Nanoscale Interplay of Native Defects and Doping in Oxide Semiconductors,” presented at the American Physical Society March Meeting, Boston, MA, March 6, 2019.
139. “Defect-Controlled Ohmic, Blocking, and Schottky Contacts to ZnO Micro-/Nanowires,” presented at the Tenth International Workshop on Zinc Oxide and Related Materials, September 12, 2018, Warsaw, Poland. Plenary Speaker.
138. “Native Point Defect Identification and Control in Ga2O3,” presented at the Tenth International Workshop on Zinc Oxide and Related Materials, September 12, 2018, Warsaw, Poland. Plenary Speaker.
137. “Depth-Resolved Cathodoluminescence Spectroscopy and Positron Annihilation: Complementary Techniques for Electronic Materials Research,”, presented at the 18th International Conference on Positron Annihilation, Orlando, FL, August 20, 2018. Plenary Speaker.
136. “Impact of Native Point Defect Movement and Segregation on Oxide Interface Electronics,” presented at the Materials Research Society Meeting, Boston, MA, Nov. 26 – Dec.1, 2017.
135. “Defect Characterization, Imaging, and Control in Wide Band Gap Semiconductors and Devices,” presented at the 17th Conference on Defects – Recognition, Imaging and Physics in Semiconductors (DRIP2017) Conference, Valladolid, Spain, October 8-12, 2017.
134. “Photophysics & Electronics at the Nanoscale: From 2D Layers to Wide Band Gap Nanowires and Transistors,” presented at the 2017 OSU Materials Week Meeting, Columbus, OH, May 12, 2017.
133. “Native point defect-controlled ohmic, blocking, and Schottky contacts to ZnO nano/microwires,” presented at the Ninth International Workshop on Zinc Oxide and Related Materials, October 31, 2016, Taipei, Taiwan. Plenary Speaker.
132. “Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions,” presented at the Ninth International Workshop on Zinc Oxide and Related Materials Meeting, October 31, 2016, Taipei, Taiwan. Plenary Speaker.
131. “Spatially Localized Photophysics of Nanostructured Materials and their Interfaces,” Materials for Energy and Sustainability Conference, Ohio-Region Section of the American Physical Society (OSAPS), Toledo, OH, October 7-9, 2016. Plenary Speaker.
130. “Nanoscale Depth-Resolved Cathodoluminescence Spectroscopy,” L.J. Brillson, E-MRS 2015 Symposium on Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices IV, Lille, France, May 11, 2015.
129. “Microscale/Nanoscale Optical and Electronic Techniques of GaN-Related Electron Devices – Tutorial,” L.J. Brillson, Materials Research Society, San Francisco, CA, April 6, 2015.
128. “Native Defect Formation and Interface Segregation in ZnO, (Mg,Zn)O and Complex Oxides,” L. Brillson, J. Perkins, M. Meyer, J.M. Chauveau, A. Redondo-Cubero, A. Hierro, and W. Windl, Materials Research Society Meeting, Boston, MA, December 1, 2014.
127. “Surfaces and Interfaces of Electronic Materials – Progress in Understanding and Control,” L.J. Brillson, Norwegian Research Council Workshop, Oslo, Norway, October 23, 2014.
126. “Native Point Defect Energies, Densities, and Electrostatic Repulsion Across MgZnO Alloys,” L.J. Brillson, J. Perkins, M. Meyer, J.M. Chauveau, A. Redondo-Cubero, A. Hierro, and W. Windl, Transparent Conducting Oxides – Fundamentals and Applications Meeting, Leipzig, Germany, September 30, 2014.
125. “Control of Native Point Defects in Complex Oxides by Electromechanical Forces,” L.J. Brillson, M. M. Rutkowski, K. McNicholas, J. Cox, Z.Q. Zeng, and F. Tuomisto, Electronic Materials Nanotechnology Summer Meeting, Cancun, Mexico, June 10, 2014.
124. “Control of Native Point Defects in Complex Oxides by Electromechanical Forces,” L.J. Brillson, M. M. Rutkowski, K. McNicholas, J. Cox, Z.Q. Zeng, and F. Tuomisto, Multifunctional Materials Workshop (MFM-9), Shimla, India, June 3, 2014.
123. “Native Point Defect Energies, Densities, and Electrostatic Repulsion Across MgZnO Alloys,” L. Brillson, J. Perkins, M. Meyer, J.M. Chauveau, A. Redondo-Cubero, A. Hierro, and W. Windl, L.J. Brillson, Materials Research Society, San Francisco, CA, April 22, 2014.
122. “Role of Native Point Defects and Ga Diffusion on Electronic Properties of Degenerate Ga-Doped ZnO,” presented at the 7th International Workshop on ZnO and Related Materials, Nice, France, September 12, 2012.
121. “Spectroscopy of Native Point Defects at ZnO Surfaces and Interfaces,” presented at the Gordon Research Conference on Defects in Semiconductors, Biddeford, Maine, August 14, 2012.
120. “Impact of Defects on Multifunctional Materials,” presented at the 7th International Multifunctional Materials (MFM-7) Workshop, Gamboa, Panama, August 7, 2012.
119. “Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High Electron Mobility Transistors on a Nanometer Scale,” presented at the Spring Materials Research Society, San Francisco, CA, April 11, 2012.
118. “Interplay of Native Point Defects with ZnO Schottky Barriers and Doping,” presented at the Fall Materials Research Society, Boston, MA, November 28, 2011.
117. “Controlling Schottky Barriers and Doping with Native Point Defects,” presented at the AVS Science and Technology Society, Nashville, TN, November 2, 2011.
116. “Controlling Native Point Defects and Epitaxial Oxide Properties,” presented at the Mott-MURI Workshop, San Jose, CA, August 29, 2011.
115. “Engineering Native Point Defects in Oxide Films and Their Interfaces,” presented at the Multifunctional Materials Workshop (MFM-6), Kodiak Island, Alaska, August 2, 2011.
114. “Native Point Defects at ZnO Surfaces, Interfaces, and Bulk Films,” presented at the 16th International Semiconducting and Insulating Materials Conference, Stockholm, Sweden, June 21, 2011.
113. “Electronic Properties of Native Point Defects at ZnO Surfaces and Interfaces,” presented at the Swiss Physical Society Meeting, Lausanne, Switzerland, June 15, 2011.
112. “Native Point Defects at ZnO Surfaces, Interfaces, and Bulk Films,” presented at the 16th International Semiconducting and Insulating Materials Conference, Stockholm, Sweden, June 21, 2011.
111. “Electronic Properties of Native Point Defects at ZnO Surfaces and Interfaces,” presented at the Swiss Physical Society Meeting, Lausanne, Switzerland, June 15, 2011.
110. “The Electronic Properties of Native Point Defects at ZnO Surfaces and Interfaces,” presented at the American Physical Society Meeting, Dallas, TX, March 24, 2011.
109. “Field-Induced Strain Degradation of AlGaN/GaN HEMTs on a Nanometer Scale,” Plenary Lecture presented at the International Workshop on Nitride Semiconductors (IWN 2010), Tampa, FL, September 20, 2010. (Chung-Han Lin presenting),
108. “Electronically-Active Defects at Complex Oxide Interfaces,” presented at the Complex Oxide Interface Workshop, Charlottesville, VA, August 23, 2010.
107. “The Electronic Properties of Point Defects at ZnO Surfaces and Interfaces,” presented at the 7th International Workshop on ZnO and Related Materials, Changchun, China, August 8, 2010.
106. “Depth-Resolved Cathodoluminescence Spectroscopy as a Probe of Defect Structure in Oxides,” 2009 International Semiconductor Device Research Symposium (ISDRS), College Park, MD, December 10, 2009.
105. “ZnO Polarity, Interface Defects and Schottky Barrier Formation,” presented at the 2009 Fall Materials Research Society Meeting, Boston, MA, December 1, 2009 (Y. Dong presenting).
104. “Massive Defect Redistribution Near Semiconductor Surfaces and Interfaces and Its Impact on Schottky Barrier Formation,” presented at the 25th International Conference on Defects in Semiconductors, St. Petersburg, Russia, July 22, 2009.
103. “Electronically-Active Defects at Complex Oxide Interfaces,” presented at the 45th Annual Workshop on Compound Semiconductor Materials and Devices, Fort Myers, FL, February 17, 2009.
102. “Defects and Interfaces — A New Look,” Keynote Discussion Lead presented at the Gordon Research Conference on Defects in Semiconductors, New London, NH, August 4, 2008.
101. “Depth Resolved Cathodoluminescence Spectroscopy of ZnO Surfaces and Interfaces,” presented at the 9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, Toledo, Spain, July 1, 2008.
100. “Controlling Schottky Barriers and Ohmic Contacts by Sub-Surface Processing,” presented at the SPIE International Symposium on Integrated Optoelectronic Devices 2007, San Jose, CA, January 21, 2008.
99. “Impact of Near-Surface Native Point Defects, Chemical Reactions, and Surface Morphology on ZnO Interfaces,” presented at the 2007 Materials Research Society Meeting, Boston, MA, November 27, 2007.
98. “Future Directions for Semiconductor Surface Passivation,” Conference Plenary Panel presented at the 5th International Semiconductor Surface Passivation Workshop, Zakopane, Poland, September 19, 2007.
97. “Surface and Near-Surface Passivation, Chemical Reaction, and Schottky Barrier Formation at ZnO Interfaces,” presented at the 5th International Workshop on Semiconductor Surface Passivation, Zakopane, Poland, September 16, 2007.
96. “ZnO Interface Native Defects, Chemical Reactions, and Schottky Barrier Control,” presented at the 3rd Asia-Pacific Workshop on Wide Bandgap Semiconductors, Jeonju, Korea, March 12, 2007.
95. “Schottky Barrier and Ohmic Contact Control by Sub-Surface Processing,” presented at the SPIE Photonics West Meeting, San Jose, CA, January 21, 2007.
94. “Native Defects and Schottky Barrier Formation at Metal-ZnO Interfaces,” presented at the Fall 2006 Materials Research Society Meeting, Boston, MA, November 27, 2006.
93. “Low Energy CL Spectroscopy of Interfaces and Nanostructures,” presented at the Microscopy and Microanalysis Conference, Chicago, IL, July 20, 2006.
93. “Overview of Recent Advances in Spectroscopy of Electronic Materials Surfaces and Interfaces,” Plenary Lecture presented at the 2006 May Conference (Society for Applied Spectroscopy-Cleveland Section), Cleveland, OH, May 17, 2006.
92. “Localized States and Charge Transfer at ZnO Surfaces and Interfaces,” presented at the American Physical Society March Meeting 2006, Baltimore, MD, March 13, 2006.
91. “SiC Interface Reactions, Defects, and Schottky Barriers,” presented at the 2006 Workshop on Compound Semiconductor Materials and Devices, Scottsdale, AZ, February 20, 2006.
90. “The Impact of Surface Defects on SiC Schottky and Ohmic Contact Formation,” presented at the 2005 International Semiconductor Device Research Symposium, Bethesda, MD, December 8, 2005.
89. “The Role of Defects at Nanoscale Semiconductor Interfaces,” presented at the AVS 52nd International Symposium, Boston, MA, November 2, 2005. (Y. Strzhemechny presenting)
88. “Electronic and Chemical Properties of BiFeO3 Thin Films and Interfaces,” presented at the ONR/WVU Workshop on Multifunctional Material Stoichiometry, Jackson Hole, WY, July 20, 2005.
87. “Electronic Properties of BiFeO3 Thin Films and Interfaces,” presented at the Defense Advanced Research Project Agency Workshop on Multiferroics & Magneto-Electric Heterostructures, Arlington, VA, June 30, 2005.
86. “Controlling Ohmic-to-Rectifying Conversion of Au-ZnO Interfaces and the Role of Near-Interface States,” presented at the Workshop on Materials and Devices Incorporating Functional Interfaces,” Palm Springs, CA, April 13, 2005.
85. “Plasma Processing Control of ZnO Schottky Barriers,” presented at the Workshop on Compound Semiconductor Materials & Devices, Coconut Beach, FL, February 23, 2005.
84. “Nanoscale Deep Level Defect Correlation with Schottky Barriers in SiC-Metal Diodes,” presented at the Workshop on Compound Semiconductor Materials & Devices, Coconut Beach, FL, February 22, 2005.
83. “Near Surface Defects and Schottky Barrier Formation at Au/ZnO(000Ä«) Interfaces,” presented at the 3rd International ZnO Workshop, Sendai, Japan, October 6, 2004.
82. “Local Electronic and Chemical Structure at GaN, AlGaN and SiC Heterointerfaces,” presented at the 12th International Conference on Solid Films and Surfaces (ICSFS-12), Hamamatsu, Japan, June 22, 2004.
81. “Localized Defect States, Impurities, and Doping in AlxGa1-xN Epilayers,” presented at the 50th International AVS Symposium, Baltimore, MD, Nov. 3, 2003.
80. “Silicon Carbide Studied Via LEEN and Cathodoluminescence Spectroscopy,” presented at the 10th International Conference on Silicon Carbide and Related Materials, Lyon France, October 7, 2003.
79. “Process-Induced Defects at SiC Surfaces and Metal Interfaces,” presented at the ONR Workshop on Process-Induced Defects in Wide Gap Semiconductors, Rogue Valley, OR, July 19, 2003.
78. “Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices,” presented at the Electrochemical Society Meeting, Paris, France, April 27, 2003.
77. “Microcathodoluminescence and Secondary Ion Mass Spectroscopies of Defects in III-V Nitride Semiconductors and Heterojunctions,” presented at the ONR Workshop on Defect Characterization Techniques in Wide Gap Semiconductors, Maui, HI, March 16, 2003.
76. “Thermal and Doping Dependence of 4H-SiC Polytype Transformations,” presented at the American Physical Society, Austin, TX, March 3, 2003.
75. “Polytype Transformation at SiC Surfaces and Interfaces,” presented at the ONR Workshop on Extended Defects in Wide Gap Semiconductors: Electrical and Optical Effects, Belize, Central America, January 29, 2002.
74. “Defects and Interface Chemistry at III-V Nitride and SiC Surfaces and Interfaces,” presented at the Workshop on Near-surface Effects in Semiconductor Substrates, Kodiak Island, Alaska, August 5, 2001.
73. “Low Energy Electron-Excited Nano-luminescence Studies of GaN and Related Materials,” 8th International Conference on the Formation of Semiconductor Interfaces, Hokkaido, Japan, June 10, 2001.
72. “Low Energy Electron Excited Nanoscale Luminescence Spectroscopy of Defects at Buried Interfaces and Ultrathin Films,” presented at the 28th Physics and Chemistry of Semiconductor Interfaces (PSCI) Conference, Orlando, FL, January 9, 2001.
71. “Defects and Doping at GaN/Sapphire Interfaces,” presented at the International Specialist Meeting on Bulk Nitride Growth and Related Techniques, Foz do Iguaçú, Brazil, November 14, 2000.
70. “Growth-Dependent Electronic States and Strain in GaN Heterostructures,” presented at the Polarization Effects on Semiconductors Workshop, Glacier National Park, MT, August 28, 2000.
69. “Low Energy Electron Excited Nano-luminescence Spectroscopy of GaN Surfaces and Interfaces,” presented at the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 10, 2000.
68. “Changing Roles of Researchers in Industry,” presented at the American Physical Society Meeting, Minneapolis, MN, March 19, 2000.
67. “Depth — Resolved Detection and Process Dependence of Traps at Ultrathin Plasma — Oxidized and Deposited SiO2/Si Interfaces,” presented at the International Conference on Silicon Dielectric Interfaces, Raleigh, NC, February 26, 2000.
66. “Localized Electronic States Near GaN Surfaces and Interfaces,” presented at the 47th Annual Solid State Conference & Solid State Theory Symposium, Athens, OH, October 17, 1999.
65. “Localized Electronic States Near GaN Surfaces and Interfaces,” presented at the 1st GaN Electronic Device Workshop, Cornell University, Ithaca, NY, August 17, 1999.
64. “Low Energy Cathodoluminescence Spectroscopy of Wide Band Gap Semiconductors,” presented at the International Union of Materials Research Societies (IUMRS) Meeting, Beijing, China, June 14, 1999.
63. “Ultrathin Silicon Oxide and Nitride-Silicon Interface States,” presented at the Materials Research Society Spring Meeting, San Francisco, CA, April 6, 1999.
62. “’Buried’ Si-SiO2 Interface States,” presented at the American Physical Society Centennial March Meeting, Atlanta, GA, March 23, 1999 (A. P. Young presenting).
61. “Depth-Resolved Cathodoluminescence Spectroscopy Studies of Defects near GaN/InGaN/GaN Quantum Wells,” Highlight Talk presented at the Physics and Chemistry of Semiconductor Interface Conferences, San Diego, CA, January, 17, 1999
60. “Atomic-Scale Control of Electronic and Chemical Structure of Heterojunctions,” presented at the NSF Advancing Frontiers of Condensed Matter Science Symposium, Philadelphia, PA, October 15, 1997.
59. “Deep Level Spectroscopy of Heterojunction Interfaces,” presented at the 14th North Coast Symposium, American Vacuum Society – Ohio Chapter, Cleveland, OH, June 5, 1997.
58. “Changing Roles of Materials Researchers in Industry,” Plenary Lecture presented at the Inaugural Israeli Materials Research Union, Herzilya, Israel, April 30, 1996.
57. “Deep Level Luminescence Spectroscopy of Semiconductor Heterojunctions,” presented at the Materials Research Society 1995 Fall Meeting, Boston, MA, November 27, 1995.
56. “Luminescence Spectroscopy of Semiconductor Surfaces and Interfaces,” presented at the Thirteenth International Pfefferkorn Conference on Luminescence, Niagara Falls, Canada, May 16, 1994.
55. “Photoemission and Low Energy Cathodoluminescence Spectroscopy Studies of Metal – Semiconductor Interfaces,” presented at the Sixth International Conference on Solid Films and Surfaces, Paris, France, June 29, 1992.
54. “Process-Dependent Electronic Structure at Metallized GaAs(100) Contacts,” presented at the Materials Research Society Meeting, San Francisco, CA, April 29, 1992.
53. “Electronic Contacts for Optoelectronics,” presented at the Second International Meeting, Advances in Processing and Characterization Technologies, Tampa, FL, May 9, 1991.
52. “Metal Work Function Dominated Contacts to GaAs,” presented at the Electrochemical Society Meeting, Seattle, WA, October 15, 1990.
51. “Metal-Semiconductor Interface Reactions and Schottky Barriers,” Keynote Lecture presented at the Third Electronic & Processing Congress, ASM International, San Francisco, CA, August 20, 1990.
50. “Interface States at Metal / Compound Semiconductor Junctions,” 11th International Vacuum Congress and 7th International Conference on Solid Surfaces, Cologne, W. Germany, September 26, 1989.
49. “Understanding and Controlling Metal-Semiconductor Interfaces,” presented at the Symposium on Semiconductor Interfaces and Heterojunctions, University of California at San Diego, La Jolla, CA, June 10, 1989.
48. “New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces,” presented at the Materials Research Society Meeting, San Diego, CA, April 25, 1989.
47. “Progress in Understanding and Controlling Metal-Semiconductor Interfaces,” Keynote Lecture presented at the Industry-University Advanced Materials Conference, Denver, CO, March 7, 1989.
46. “Characterization of Schottky Barriers Applied to III-V Compounds,” presented at the International Conference on Materials and Process Characterization for VLSI, Shanghai, China, October 25, 1988.
45. “Deep Levels and Band Bending at Metal-Semiconductor Interfaces,” presented at the NATO Advanced Research Workshop, Garching, West Germany, August 22, 1988.
44. “Schottky Barriers- Still a Moving Target,” presented at the Texas Chapter, American Vacuum Society, College Station, TX, April 25, 1988.
43. “Contacts to III-V Semiconductors,” presented at the University of California, Berkeley Workshop on III-V Semiconductor Materials & Devices, Sunnyvale, CA, November 10, 1987.
42. “Cathodoluminescence Spectroscopy of Metal-Semiconductor Interface Structures,” presented at the American Vacuum Society Meeting, Anaheim CA, November 4, 1987.
41. “Implications of Atomic-Scale Chemical Reaction and Diffusion for Electronic Device Structures,” presented at the Army Workshop on Chemical Concepts for Ultrasmall Electronic Devices, Boston, MA, October 28, 1987.
40. “Electronic Structure of Metal – Semiconductor Interfaces,” presented at the Mexican National Vacuum Society Meeting, University of Morelia, Michoacan, Mexico, September 23, 1987.
39. “Atomic Scale Characterization and Processing of Semiconductor Surfaces and Interfaces,” presented at the North Coast Ohio Chapter Symposium of the American Vacuum Society, Cleveland, OH, May 21, 1987.
38. “Physics and Chemistry of Metal – Semiconductor Interfaces,” presented at the Electrochemical Society Meeting, Philadelphia, PA, May 11, 1987.
37. “Low Energy Cathodoluminescence Spectroscopy of Metal-Semiconductor Interfaces,” presented at the Scanning Electron Microscopy Conference, Hamilton, Ontario, Canada, May 5, 1987.
36. “Interface Chemical Bonding and Diffusion on an Atomic Scale at Metal-Semiconductor Interfaces,” presented at the American Physical Society Meeting, New York City, NY, March 25, 1987.
35. “Surface Science Characterization of Metal-Semiconductor Interfaces,” presented at the American Vacuum Society Ohio Chapter Meeting, Dayton, OH, February 17, 1987.
34. “Pulsed Laser Processing of Semiconductor Interfaces,” Army Research Office Workshop on Semiconductor Materials Surfaces, Raleigh -Durham, NC, November 12, 1986.
33. “Recent Photoemission and Cathodoluminescence Spectroscopy Studies of III-V Semiconductor Interfaces,” Workshop on 3-5 Semiconductor -Metal Interfacial Chemistry and Its Effect On Electrical Properties, Stanford University, Palo Alto, CA, November 4, 1986.
32. “Tailoring Metal-Semiconductor Interfaces,” presented at the European Materials Research Society Summer School on Current Problems of Semiconductor Surfaces and Interfaces, Burghausen, West Germany, July 1, 1986.
31. “Characterization of Metal-Semiconductor Interfaces by Surface Science Techniques,” presented at the Upstate New York Chapter meeting of the American Vacuum Society, Rochester, NY, June 12, 1986.
30. “Contacts to III-V Semiconductors,” presented at the Berkeley College of Engineering Workshop on III-V Semiconductor Materials and Devices, Palo Alto, CA, June 3, 1986.
29. “Metallization of III-V Compounds,” presented at the Northeast Regional AIME/MRS Meeting on Semiconductor-Based Heterostructures: Interfacial Structure and Stability, Murray Hill, NJ, May 2, 1986.
28. “Chemical Interactions Between Metals and Semiconductors,” presented at the International Workshop of Electrolytes and Metal Interfaces with Semiconductors, Ein Gedi, Israel, April 17, 1986.
27. “Chemical Reactions and Interdiffusion at III-V Compound Semiconductor-Metal Interfaces,” presented at the Materials Research Society, Boston, MA. December 5, 1985.
26. “Physics and Chemistry of Metal-Semiconductor Interfaces,” presented at the Mexican Vacuum Society Meeting, Monterrey, Mexico, October 17, 1985.
25. “Understanding Chemical Interactions at Metal-Semiconductor Interfaces for Improved Adhesion,” presented at the Department of Energy Panel on Bonding and Adhesion, Aspen, CO, August 14, 1985.
24. “Promoting and Characterizing New Chemical and Electronic Structure at Metal-Semiconductor Interfaces,” Plenary Lecture presented at the International Conference on the Formation of Semiconductor Interfaces, Marseilles, France, June 11, 1985.
23. “Metal-Semiconductor Interface Characterization and Control,” presented at the Arizona Chapter, American Vacuum Society, Phoenix, AZ, February 26, 1985.
22. “Progress in Understanding Metal-Semiconductor Interfaces by Surface Science Techniques,” Keynote Lecture presented at the 1984 International Chemical Congress of Pacific Basin Societies, Honolulu, Hawaii, Dec. 19, 1984.
21. “Advances in Characterizing and Controlling Metal/Semiconductor Interfaces,” Plenary Lecture presented at the Third International Conference on Solid Films and Surfaces, Sydney, Australia, August 27, 1984.
20. “Semiconductor Interface Characterization and Control,” presented at the Workshop on New Frontiers in Semiconductor Materials, Microelectronics and Information Sciences Center, University of Minnesota, Minneapolis, MN, August 13, 1984.
19. “Contact Technology in 3-5 Devices Analysis and Modification of Metal-Semiconductor Contact Interface in 3-5 Devices,” presented at the IEEE International Electron Devices Meeting, Washington, DC, December 5, 1983.
18. “Soft X-Ray Photoemission Techniques for Characterizing Metal-Semiconductor Interfaces,” presented at the Brookhaven Conference on Advances in Soft X-Ray Science and Technology, Brookhaven, Long Island, NY, October 17, 1983.
17. “Chemical Aspects of Metal-Semiconductor Contacts,” presented at the Metal-Semiconductor Contacts Workshop, Cornell University, Ithaca, NY, October 13, 1982.
16. “Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces,” presented at the Second IUPAP Semiconductor Symposium on Surfaces and Interfaces, Physics and Electronics, Trieste, Italy, September 1, 1982.
15. “Mechanisms of Schottky Barrier Formation,” Plenary Panel Presentation, presented at the Physics and Chemistry of Semiconductor Interfaces Conference, Asilomar, CA, January 30, 1982.
14. “Chemical and Electronic Structure of Compound Semiconductor-Metal Interfaces,” presented at the American Vacuum Society Meeting, Anaheim, CA, November 2-6, 1981.
13. “Soft X-Ray Photoemission Studies of Metal-Semiconductor Interfaces,” presented at the Electrochemical Society Meeting, Denver, CO, October 14, 1981.
12. “Interface Chemical Reaction and Diffusion of Thin Metal Films on Semiconductors,” presented at the Fifth International Thin Films Congress, Herzlia, Israel, September 21, 1981.
11. “Atomic Redistribution and Electronic Structure at Metal-Semiconductor Interfaces,” presented at the Electronic Materials Conference, Santa Barbara, CA, June 25, 1981.
10. “Interaction of Metals with Semiconductor Surfaces,” Plenary Lecture presented at the Second International Conference on Solid Films and Surfaces, College Park, MD, June 18, 1981.
9. “The Physics and Chemistry of Metal-Semiconductor Interfaces,” presented at the North Central Chapter of the American Vacuum Society, Detroit, MI, May 19, 1981.
8. “Atomic Redistribution at Compound Semiconductor-Metal Interfaces,” presented at the Condensed Matter Symposium, Americal Physical Society Meeting, Phoenix, AZ, March 16, 1981.
7. “Metal/Semiconductor Interdiffusion,” presented at the Solid State Physics Conference of the British Institute of Physics, Symposium on Diffusion and Related Phenomena, York, England, January 5-7, 1981.
6. “Atomic Redistribution at Metal III-V Compound Semiconductor Interfaces,” presented at the Interface Symposium, Materials Research Society Conference, Boston, MA, November 17, 1980.
5. “The Physics and Chemistry of Schottky Barriers,” presented at the Rochester Condensed Matter Symposium, Rochester, NY, June 26, 1980.
4. “Microscopic Characterization of Schottky Barrier Formation,” presented at the Upstate New York Chapter of the American Vacuum Society, Rochester, NY, June 19, 1979.
3. “Chemical Reactions and Dipole Formation at Metal-Semiconductor Interfaces,” presented at the American Physical Society Meeting, Washington, D.C., March 27, 1978.
2. “Chemical Reaction and Charge Redistribution at Metal-Semiconductor Interfaces,” presented at the Fifth Annual Conference on the Physics of Compound Semiconductor Interfaces, University of Southern California, Los Angeles, CA, January 17-20, 1978.
1. “Surface Electronic Structure of Metals and Other Adsorbates on CdS and CdSe,” presented at the Upstate New York Chapter, American Vacuum Society, Rochester, NY, June 17, 1976.
