131. S. Gupta, M. Elias, X. Wen, J. Shapiro, L. Brillson, W. Lu, and S. Lee, “Detection of clinically relevant levels of biological analyte under physiologic buffer using planar field effect transistors,”Biosensors and Bioelectronics,” 24 (4), 505-511(2008).
130. Y. Dong, Z-Q. Fang, D.C. Look, G. Cantwell, J. Zhang, J.J. Song, and L.J. Brillson, “Zn- and O-face effects at ZnO surfaces and metal interfaces,”Appl. Phys. Lett. 93, 172111 (2008). doi: 10.1063/1.2974983
129. Z.-Q. Fang, B. Claflin, D.C. Look, Y.F. Dong, H.L. Mosbacker, and L.J. Brillson, “Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy,”J. Appl. Phys. 104, 063707 (2008).
128. D.R. Doutt, C. Zgrabik, H.L. Mosbacker, and L.J. Brillson, “Impact of near-surface native point defects, chemical reactions and surface morphology on ZnO interfaces,”J. Vac. Sci. Technol. B 26, 1477 (2008).
127. J. Zhang, S. Walsh, C. Brooks, D.G. Schlom, and L.J. Brillson, “Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3,”J. Vac. Sci. Technol. B 26, 1466 (2008).
126. P.E. Smith, M. Lueck, S.A. Ringel, and L.J. Brillson, “Atomic Diffusion and Interface Electronic Structure at In0.49Ga0.51P/GaAs Heterojunctions,”J. Vac. Sci. Technol. B 26, 89-95 (2008).
125. A.J. Hauser, J. Zhang, L. Mier, R.A. Ricciardo, P.M. Woodward, T.L. Gustafson, L.J. Brillson, and F.Y. Yang, “Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-Vis absorption and cathodoluminescence spectroscopies,”Appl. Phys. Lett. 92, 222901(2008).
124. Y.M. Strzhemechny, M. Bataiev, S.P. Tumakha, S.H. Goss, C.L. Hinkle, C.C. Fulton, G. Lucovsky and L.J. Brillson “Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si Stacks,”J. Vac. Sci. Technol. B 26, 232-243 (2008).
123. E. Eteshola, M.T. Keener, M. Elias, J. Shapiro, L.J. Brillson, B. Bhushan and S.C. Lee, “Engineering Functional Protein Interfaces for Immunologically Modified Field Effect Transistor (ImmunoFET) by Molecular Genietic Means,”J. Royal Soc. Interface 5, 123-127 (2008).