Publications

Authored and coauthored more than 135 papers in leading technical journals and international conferences

Citations to my Publications (Google Scholar link):

1652     Total citations
22          Hirsch h-index
38          i10-index

Refereed Journal Papers / Proceedings

[1] S. Sankar, S. Saha, J.-S. Chen, S.-P. Chien, Y.­ W. Lan, X. Ma, M. Snure, and S. Arafin, “Optical properties of low-defect large-area h-BN for quantum applications“, phys. stat. sol. Rapid Res. Lett., pp. 2400034 (1-6), Mar. 2024.

[2] B. Zhou, Y. Li, J. Li, T. Yu, L. Qiu, S. M. N. Hasan, Y. Lin, S. Arafin, S. Sadaf and L. Zhu, “Lattice nitrogen engineering of Rh/InGaN nanowires with oxygen for light-driven methane reforming with CO2 toward syngasScience Bulletin, Feb. 2024.

[3] A. Ghosh, K. Khan, S. Sankar, Z. (Ashley) Jian, S. M N Hasan, E. Ahmadi and S. Arafin, “Comparative analysis of selective area grown Ga- and N-Polar InGaN/GaN nanowires“,  AIP Adv., vol. 14, no. 2, pp. 025344, Feb. 2024

[4] W. You, S. Balabadrapatruni, B. Thompson, R. Gibson, S. Arafin, and S. C. Badescu, “Thermal modeling of electrically-pumped continuous-wave microring resonator-based topological insulator lasers”, Opt. Express, vol.32, no. 3, pp. 3342-3355, Jan. 2024.

[5] D. Li, Z. Wu, X. Fan, S.M N. Hasan, S. Arafin, M. A. Rahman, J. Li, Z. Wang, Y. Li, T. Yu, X. Kong, L. Zhu, S. M. Sadaf, Z. Huang, and B. Zhou, “A semiconducting hybrid of RhOx/GaN@InGaN for simultaneous activation of methane and water toward syngas by photocatalysis”, PNAS Nexus, vol. 2, no. 11, pp. 1-9, Nov. 2023.

[6] A. Ghosh, A. M. D. M. Xavier,  S. M. N. Hasan, S. I. Rahman, A. Blackston, A. Allerman, R. C. Myers, and S. Rajan and S. Arafin, “Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells,”  J. Phys. D: Appl. Phys., vol. 57, no. 3, pp. 035105(1-8), Oct. 2023.

[7] A. M. D. M. Xavier, A. Ghosh, S. I. Rahman, A. Allerman, , D. Verma, R. C. Myers, S. Arafin, and S. Rajan, “Multi-active region AlGaN ultraviolet light emitting diodes with transparent tunnel junctionsAppl. Phys. Express, vol. 16, no. 8, pp. 082001, Aug. 2023

[8] M. S. I. Sumon, S. Sankar, W. You, I. I. Faruque, S. Dwivedi, and S. Arafin, “Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µmJ. Phys: Photon., vol. 5, no. 3, p. 35005, July 2023.

[9] S. Saha, S. Sankar, Sk S. S. Nikor, and S. Arafin, “A review of intercalation of rare gas solids on graphene and hexagonal boron nitride“, (Invited), phys. stat. sol. – (Rapid Res. Lett.), pp. 2300066 (1-14), June 2023.

[10] S. M. N. Hasan, W. You, A. Ghosh, S. Sadaf, and S. Arafin, “Selective area epitaxy of GaN nanostructures: MBE growth and morphological analysisCryst. Growth Des., vol. 23, no. 6, pp. 4098–4104, May 2023.

[11] W. You*, R. Arefin*, F. Uzgur, S.-H Lee, S. J. Addamane, B. Liang, and S. Arafin, “Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealingOpt. Lett., vol. 48, no. 7,  pp. 1-4, Mar. 2023. *equal contribution.

[12] A. M. D. M. Xavier, A. Ghosh, M. Engle, S. I. Rahman, A. Allerman, S. Arafin, and S. Rajan, “Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions“, Appl. Phys. Lett., vol. 122, no. 8, Feb. 2023.

[13] W. You, S. Dwivedi, I. I. Faruque, D. D. John, A. P. McFadden, C. J. Palmstrøm, L. A. Coldren, and S. Arafin, “Toward GaSb-based monolithically integrated widely-tunable lasers for extended short- and mid-wave infrared wavelengths,” IEEE J. Quant. Electron., vol. 59, no. 1, pp. 1-9, Art no. 2000309, Jan. 2023.

[14] R. Muthaiah, R. S. Annam, F. Tarannum, A. K. Gupta, J. Garg, and S. Arafin, Length dependence thermal conductivity of Zinc-Selenide (ZnSe) and Zinc Telluride (ZnTe)- A combined first principles and frequency domain thermoreflectance (FDTR) study,”  Phys. Chem. Chem. Phys., Nov. 2022.

[15] S.-P. Chien, Y.-C. Chang, K. B. Simbulan, S. Saha, Y. F. Chiang, R. K. Saroj, G.-C. Yi, S. Arafin, T.-H. Lu, and Y.-W. Lan, “Helicity exchange and symmetry breaking of in-plane phonon scattering of h-BN probed by polarized Raman spectroscopy“,  Appl. Phys. Lett., vol. 121, no. 18, p. 182203, Oct. 2022.

[16] M. M. Rahaman, S. Saha, S. M N Hasan, W. You, A. Ghosh, SK S. S. Nikor, M. S. I. Sumon, B. Freeman, S. Sankar, H. Colijn, S. M. Sadaf, J. Garg, and S. Arafin, “Luminescence and Raman spectroscopic properties of cubic boron nitride by drop-casting technique ”, J. Cryst. Growth, vol. 593, pp. 126781 (1-6), June 2022.

[17] S-H. Lee, R. Arefin, H. Jung, J. Ha, S. I. Sumon, J. S. Kim, S. Krishna, and S. Arafin, “Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots”, J. Appl. Phys., vol. 131, no. 23, pp. 233104, June 2022.

[18] S. M. N. Hasan, A. Ghosh, S. Sadaf, and S. Arafin, “Effects of InGaN quantum disk thickness on the optical properties of GaN nanowires”, J. Cryst. Growth., vol. 588, pp. 126654 (1-6),  Apr. 2022.

[19] R. Muthaiah, J. Garg, and S. Arafin, “Ultrahard BC5 – An efficient nanoscale heat conductor through dominant contribution of optical phonons”, ComputMaterSci., vol. 206, pp. 111276 (1-5), Feb. 2022.

[20] S. Saha, Y. C. Chang, T. H. Yang, A. Rice, A. Ghosh, W. You, M. Crawford, T.-H. Lu, Y. W. Lan, and S. Arafin, “Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphireNanotechnol., vol. 33, no. 21, p. 215702,  Feb. 2022.

[21] S. M. N. Hasan, W. You, M. S. I. Sumon, and S. Arafin, “Recent progress of electrically-pumped AlGaN diode lasers in the UV-B and -C bands“, (Invited), Photonics – MDPI, vol. 8, no. 7, pp. 267(1-25), July 2021.

[22] C-H. Li, S. H. Ramachandra, I. I. Faruque, S. Dwivedi, and S. Arafin, “Design of green light sources using nonlinear photonics and on-chip pump lasers,” IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 1, pp. 1-8, Art no. 6100308, July 2021.

[23] S. Saha, A. Rice, A. Ghosh, S. M. N. Hasan, W. You, L. J. Bissell, R. Bedford, M. H. Crawford, and S. Arafin, “Comprehensive characterization and analysis of hexagonal boron nitride on sapphire,” AIP Adv., vol. 11, no. 5, pp. 055008, Apr. 2021.

[24] Z. J.-Eddine*, S. M. N. Hasan*, B. Gunning, H. Chandrasekar, M. Crawford, A. Armstrong, S. Arafin, and S. Rajan, “Low-voltage drop tunnel junctions grown monolithically by MOCVD”, Appl. Phys. Lett. vol. 118, no. 5, pp. 053503 (1-4), Feb. 2021. *equal contribution

[25] S. M. N. Hasan, B. Gunning, Z. J.-Eddine, H. Chandrasekar, M. Crawford, A. Armstrong,  S. Rajan, and S. Arafin, “All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junction”, J. Phys. D: Appl. Phys., vol. 54, no. 15, pp. 155103(1-8), Jan. 2021.  

[26] R. Arefin, W. You, S. H. Ramachandra, S. M. N. Hasan, H. Jung, M. Awwad, S. Arafin, “Theoretical analysis of tunnel-injected sub-300 nm AlGaN UV lasers”, IEEE J. Quant. Electron., vol. 56, no. 6,  pp. 1-10, Sept. 2020.

[27] Z. Jamal-Eddine, Syed M. N. Hasan, B. Gunning, , H. Chandrasekar, M. Crawford, A. Armstrong, S. Arafin, and S. Rajan, “Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs”, Appl. Phys. Lett., vol. 117, no. 5, July 2020.

[28] R. Arefin, S. H. Ramachandra, H. Jung, W. You, S. M. N. Hasan, H. Turski, S. Dwivedi, S. Arafin, “III-N/Si3N4 integrated photonics platform for blue wavelengths”, IEEE J. Quant. Electron.,  vol. 56, no. 4, pp. 6300309(1-9), May 2020.

[29] S. Arafin and H. Jung “Recent progress on GaSb-based electrically-pumped VCSELs for wavelengths above 4 μm,” Proc. SPIE 10980, Image Sensing Technologies: Materials, Devices, Systems, and Applications VI, 109800H, May 2019.

[30] S. Arafin, S. M. N. Hasan, Z. J.-Eddine, D. Wickramaratne, and S. Rajan, “Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission,Semicon. Sci. Technol. vol. 34, no. 7, p. 074002, June 2019.

[31] S. Arafin, A. P. McFadden, B. Paul, S. M. N. Hasan, J. Gupta, C. J. Palmstrøm and L. A. Coldren, “Study of wet and dry etching processes for antimonide-based photonic ICs,” Opt. Mater. Express, vol. 9, no. 4, pp. 1-9, Mar. 2019

[32] A. Banerjee, R. Chen, S. Arafin, and S. Mitragotri. “Intestinal iontophoresis from mucoadhesive patches: A strategy for oral deliveryJ. Control. Release, vol. 297, pp. 71-78, Jan. 2019.

[33] A. Simsek, S. Arafin, S.-K. Kim, G. Morrison, L. Johansson, M. Mashanovitch, L. A. Coldren, and M. J. Rodwell, “Evolution of chip-scale heterodyne optical phase-locked loops towards watt-level power consumptionIEEE J. Lightw. Technol., vol. 36, no. 2, pp. 258-264, Jan. 2018.

[34] S. Arafin, and L. A. Coldren, “Advanced InP photonic integrated circuits for communication and sensing”, (invited review), IEEE J. Sel. Top. Quantum Electron., vol. 24, no. 1, pp. 1-12, Sept. 2017.

[35] S. Arafin, A. Simsek, M. Lu, M. J. Rodwell, and L. A. Coldren, “Heterodyne locking of a fully integrated optical phase-locked loop with on-chip modulators”, Opt. Lett., vol. 42, no. 18, pp.1-4,  Aug. 2017. [Editor’s pick]

[36] B. Guan, P. Li, S. Arafin, Y. Alaskar, K. L. Wang, “Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR,” Photonics and Nanostructures- Fundamentals and Applications, vol. 28, pp.56-60, Feb. 2018.

[37] S. Arafin, A. Simsek, S.-K. Kim, W. Liang, D. Eliyahu, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Power-efficient Kerr frequency comb based tunable optical source,” IEEE Photon. J., vol. 9, no. 3, pp. 1-14,  Mar. 2017.

[38] S. Arafin, G. Morrison, M. Mashanovitch, L. A. Johansson, and L. A. Coldren, “Compact low-power consumption single-mode coupled-cavity lasers,”  IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, pp. 1-9, May. 2017.

[39] T. Eales, I. Marko, B. A. Ikyo, A. R. Adams, S. Arafin, S. Sprengel, M.-C. Amann and S. J. Sweeney, “Wavelength dependence of efficiency limiting mechanisms in Type-I GaInAsSb/GaSb lasers emitting in the mid-infrared,” IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, pp.1-9, Mar. 2017

[40] S. Arafin, A. Simsek, S.-K. Kim, S. Dwivedi, W. Liang, D. Eliyahu, J. Klamkin, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop,” Opt. Express, vol. 25, no. 2, pp. 681-695,  Dec. 2016. [Highlighted in Nat. Photon]

[41] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. Arafin, M. -C. Amann and S. J. Sweeney, “Temperature-stable mid-infrared GaInAsSb/GaSb vertical-cavity surface-emitting lasers (VCSELs),” Sci. Rep., vol. 6, pp. 19595(1-6), Jan. 2016.

[42] W. Li, A. Mecozzi, M. Lu, M. Vasilyev, S. Arafin, D. Dadic, L. Johansson and L. A. Coldren, “First monolithically integrated single-chip dual-pumped phase-sensitive amplifier at 1560 nm based on a highly saturated semiconductor optical amplifier,” IEEE J. Quantum Electron.,vol. 52, no. 1, pp. 1-12, Jan. 2016.

[43] Y. Alaskar*, S. Arafin*, Q. Lin, J. McKay, D. Wickramaratne, M. S. Goorsky, R. K. Lake, M. A. Zurbuchen, and K. L. Wang, “Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer”, in Proc. 18th Intl. Conf. Molecular Beam Epitaxy 2014, J. Cryst. Growth, vol. 425, no. 1, pp. 268–273, Sept. 2015. *equal contribution

[44] Y. Alaskar*, S. Arafin*, D. Wickramaratne, M. A. Zurbuchen, L. He, R. K. Lake, and K. L. Wang, “Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer,” Adv. Funct. Mater. vol. 24, no. 42, pp. 6629-6638, Aug. 2014. *equal contribution

[45] Q. Wang , B. Guan , K. Liu, X. Liu, X. Jiang, Y. Ma, S. Arafin, G. Shen, “Temperature dependent polarization switch of 850-nm VCSELs with different apertures,” Opt. Laser Technol. vol. 63, pp. 19-23, Mar. 2014.

[46] L.-T. Chang, C.-Y. Wang, J. Tang, T. Nie, W. Jiang, C.-P. Chu, S. Arafin, L. He, M. Afsal, L.­J. Chen and K. L. Wang, “Electric-field control of ferromagnetism in Mn-doped ZnO nanowires,” Nano Lett. vol. 14, no. 4, pp. 1823–1829, Feb. 2014.

[47] C.-P. Chu, S. Arafin, G. Huang, T. Nie, K. L. Wang, Y. Wang, J. Zou,  S. M. Qasim, and M. S. BenSaleh, “Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy,” in Proc. 30th North American Conference on Molecular Beam Epitaxy (NAMBE)  J. Vac. Sci. Technol. B, vol. 32, no. 2, Feb. 2014.

[48] G. M. T. Chai, T. J. C. Hose, N. E. Fox, K. Hild, A. B.Ikyo, I. P. Marko, S. J. Sweeney, A. Bachmann, S. Arafin, M.-C. Amann. “Characterization of 2.3 µm GaInAsSb-based vertical-cavity surface-emitting laser structures using photomodulated reflectance,” J. Appl. Phys., vol.115, no.1, pp. 013102 (1-7), Jan. 2014.

[49] C.-P. Chu, S. Arafin, T.  Nie, K. Yao, X. Kou, L. He, C.-Y. Wang, S.-Y. Chen, L.-J. Chen, S. M. Qasim, M. S. BenSaleh and K. L. Wang, “Nanoscale growth of GaAs on patterned Si(111) substrates by molecular beam epitaxy,” Cryst. Growth Des., vol. 14, no. 2, pp. 593-598, Dec. 2013.

[50] A. Kumar, S. Arafin, M.-C. Amann and R. Singh, “Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation,” Nanoscale Res. Lett., vol. 8, no.1, pp. 481-488, Nov. 2013.

[51] S. Arafin, X. Liu, and Z. Mi, “Review of recent progress on nitride nanowire lasers,” (invited), SPIE J. Nanophotonics, vol.7, no.1, pp. 074599(1-27), Sept. 2013. [Top downloaded article]

[52] M. H. T. Dastjerdi, M. Djavid, S. Arafin, X. Liu, P. Bianucci, P. J. Poole and Z. Mi, “Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room-temperature,” Semicond. Sci. Technol., vol. 28, no. 9, pp. 094007(1-5), Aug. 2013.  [selected as front-cover featured article]

[53] S. Arafin, A. Bachmann, K. Vizbaras, A. Hangauer, J. Gustavsson, J. Bengtsson, A. Larsson, and M.­C. Amann, “Comprehensive analysis of electrically-pumped GaSb-based VCSELs,” Opt. Express, vol. 19, no. 18, pp. 17267-17282, Aug. 2011.

[54] K. Vizbaras, M. Toerpe, S. Arafin, and M.-C. Amann, “Ultra-low resisitve GaSb/InAs tunnel junctions,” Semicond. Sci. Technol., vol. 26, no. 7, pp. 07502(1-4), Apr. 2011.

[55] S. Arafin, A. Bachmann, and M.-C. Amann, “Transverse-mode characteristics of GaSb-based VCSEL with buried tunnel junctions,” IEEE J. Sel. Top. Quantum Electron., vol. 17, no. 6, pp. 1576­1583, Mar. 2011.

[56] K. Vizbaras, S. Arafin, and M.-C. Amann, “Single mode and tunable GaSb-based VCSELs for wavelengths above 2 µm,” in Vertical-Cavity Surface-Emitting Lasers XV, J. K. Guenter, and C. Lei, (Eds.), Proc. SPIE 7952, pp.79520D(1-7), Feb. 2011.

[57] M. Ortsiefer, C. Neumeyr, J. Rosskopf, S. Arafin, G. Boehm, A. Hangauer, J. Chen, R. Strzoda, and M.-C. Amann, “GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tunable diode laser spectroscopy of carbon monoxide,” (invited), in Quantum Sensing and Nanophotonic Devices VIII, M.Razeghi, R.Sudharsanan, and G. J. Brown, (Eds.) Proc. SPIE 7945, pp. 794509(1-7), Jan. 2011.

[58] K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, and M.­C. Amann, “MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm,” J. Cryst. Growth, vol. 323, no. 1, pp. 446-449, Dec. 2010.

[59] A. Härkönen, A. Bachmann, S. Arafin, K. Haring, J. Viheriälä, M. D. Guina, and M.-C. Amann, “2.34 µm electrically-pumped VECSEL with buried tunnel junction,” in Semiconductor Lasers and Laser Dynamics IV, K. P. Panayotov, M. Sciamanna, A. A. Valle, and R. Michalzik, (Eds.), Proc. SPIE 7720, pp. 772015(1-7), Apr. 2010.

[60] A. Bachmann, S. Arafin, and K. Kashani-Shirazi, “Single-mode electrically-pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 µm,” (invited), New J. Phys., vol. 11, no. 12, pp. 125014-(1-17), Dec. 2009.

[61] S. Arafin, A. Bachmann, K. Kashani-Shirazi, S. Priyabadini, and M.-C. Amann, “Low-resistive sulphur-treated ohmic contacts to n-type InAsSb,” IET Optoelectron., vol. 3, no. 6, pp. 259-263, Dec. 2009.

[62] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Electrically-pumped continuous-wave vertical-cavity surface-emitting lasers at 2.6 µm,” Appl. Phys. Lett., vol. 95, no. 13, pp. 131120(1-3), Oct. 2009.

[63] A. Bachmann, S. Arafin, K. Kashani-Shirazi, and M.-C. Amann, “Long wavelength electrically-pumped GaSb-based buried tunnel junction VCSELs,” in Proc. 14th International Conference on Narrow Gap Semiconductors and Systems NGSS 2009, published in Physics Procedia, vol. 3, no. 2, pp. 1155­1159, Sendai, Japan, July 2009.

[64] K. Kashani-Shirazi, K. Vizbaras, A. Bachmann, S. Arafin, and M.-C. Amann, “Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7 µm wavelength range,” IEEE Photon. Technol. Lett., vol. 21, no.16, pp. 1106-1108, June 2009.

[65] A. Bachmann, K. Kashani-Shirazi, S. Arafin, and M.-C. Amann, “GaSb-based VCSEL with buried tunnel junction for emission around 2.3 µm,” IEEE J.  Sel. Top. Quantum Electron. vol. 15, no. 3, pp. 933-940, June 2009.

Refereed Conference Talks 

[1] M. S. I. Sumon1, S. Sankar, I. I. Faruque, S. Dwivedi, and S. Arafin, “Enhanced on-chip green light generation by nonlinear up-conversion using Fabry-Pérot microcavities,” CLEO 2024, Charlotte, NC, USA, May 2024.

[2] A. Ghosh, K. Khan, S. Sankar, Z. (Ashley) Jian, S. M N Hasan, E. Ahmadi and S. Arafin, “Selective area growth of Ga- and N-polar InGaN/GaN nanowires – A comparative study” CLEO 2024, Charlotte, NC, USA, May 2024.

[3] M. Crisan, D. A. Carpenter, and S. Arafin, “A recurrent multiport interferometer architecture for fault-tolerant programmable photonics,” CLEO 2024, Charlotte, NC, USA, May 2024.

[4] M. Muduli, Y. Xia, S. Mills, S.H. Lee, S. Arafin, and S. Krishna, “GaAsSb/Si heterojunction photodiodes fabricated with epitaxial layer transfer,” 66th Electronic Materials Conference 2024,  Maryland, DC, USA,  June 2024.

[5] A. M. D. M. Xavier, A. Ghosh, S. I. Rahman, A. Allerman, S. Arafin and S. Rajan, “Demonstration of AlGaN tunnel junction p-down UV light emitting diodes,” 65th Electronic Materials Conference 2023, Santa Barbara, CA, USA, June 2023.

[6] M. S. I. Sumon, M. Crisan, W. You, S. Sankar, I. I. Faruque, S. Dwivedi, and S. Arafin, “An all-optical neuron for scaling integrated photonic neural networks“, IEEE Photonics Conference 2023, Orlando, FL, USA, Nov. 2023

[7] Y. Xia, Sk. S. S. Nikor, N. S. Nallamothu, R. Adams, H. Jung, N. Gajowski, S.H. Lee, R. M. Reano, S. Krishna, S. Ringel, and S. Arafin, “Fabrication of Si/GaAs0.51Sb0.49 heterostructure diodes via transfer printing“, IEEE Photonics Conference 2023, Orlando, FL, USA, Nov. 2023

[8] N. S. Nallamothu, Y. Xia, S. S. S. Nikor, H. Jung, N. Gajowski, S.H Lee, S. Arafin, S. Krishna, R. M. Reano, “Direct bonding of GaAsSb to silicon for high-speed avalanche photodiodes” Frontier in Optics 2023, Tacoma, WA, USA, Oct. 2023.

[9] M. S. I. Sumon, S. Sankar, Sk S. S. Nikor, I. Faruque, S. Dwivedi and S. Arafin, “Modeling of GaSb-Based Monolithically Integrated Passive Photonic Devices at λ > 2 µm,” accepted in Mid-IR Optoelectronics: Materials and Devices (MIOMD – XVI), Norman, OK, USA, Aug. 2023.

[10] A. Ghosh, A. M. D. M. Xavier, SMN Hasan, S. I. Rahman, A. Allerman, S. Rajan, and S. Arafin, “Towards electrically-pumped AlGaN UV-A lasers with transparent tunnel junctions,” Conf. Lasers and Electro-Optics (CLEO) 2023, San Jose, CA, USA

[11] R. Arefin, W. You, F. Uzgur, B. Liang and S. Arafin, “Rapid thermal annealing of InAlGaAs/GaAs quantum dot lasers for sub-900 nm emission”,  Conf. Lasers and Electro-Optics (CLEO) 2023, San Jose, CA, USA

[12] S. M. N. Hasan, W. You, A. Ghosh, S. M. Sadaf, and S. Arafin, “Formation of various types of MBE-grown GaN structures by selective area epitaxy”, Photonics North 2023, Montreal, QC, Canada, June 2023.

[13] A. M. D. M. Xavier, A. Ghosh, S. I. Rahman, S. Arafin, and S. Rajan, “Interband tunnel junctions for AlGaN ultraviolet light emitting diodes,” Conference OE603,  Conference: Light-Emitting Devices, Materials, and Applications XXVII, SPIE Opto 2023, within SPIE Photonics West, San Francisco, CA, USA, Jan. 2023.

[14] W. You, B. Thompson, P. Shah, R. Bedford, R. Gibson, S. Arafin, S. C. Badescu, “Considerations for electrically-pumped quantum Hall effect topological laser arrays”  2022 IEEE Research and Applications of Photonics in Defense Conference (RAPID), Miramar Beach, FL, USA, Sept. 2022.

[15] A. Ananthachar, M. Kotlyar, S. Ghosh, S. Dwivedi, S. Iadanza, L. O’Faolain, S. Arafin, and B. Corbett, “Realization of a micro-cavity via the integration of silicon nitride and lithium niobate using micro transfer printingIntegrated Photonics Research, Silicon and Nanophotonics (IPR) within Advanced Photonics 2022, Hybrid, July 2022. (Best Student Paper Award)

[16] W. You, B. J. Thompson, P. J. Shah, R. Bedford, R. Gibson, and S. Arafin, and Stefan C. Badescu, “Effects of disorders on ring resonator-Based topological lasers at 1.55 µm,Integrated Photonics Research, Silicon and Nanophotonics (IPR) within Advanced Photonics 2022, Hybrid, July 2022.

[17] A. M. D. M. Xavier, A. Ghosh, M. Engle, S. I. Rahman, A. Allerman, D. Verma, R. C. Myers, S. Arafin, and S. Rajan, “Multi-active region AlGaN ultraviolet light emitting diodes with transparent tunnel junctions” Device Research Conference 2022, Columbus, OH, USA, June 2022. (Best Student Paper Award)

[18] S. M. N. Hasan, A. Ghosh, S. M. Sadaf, and S. Arafin, “On the InGaN quantum disk thickness and cascaded multiple active region nanowire LEDs grown by molecular beam epitaxy” Photonics North 202, Niagara Falls, ON, Canada, May 2022.

[19] S. M. N. Hasan, A. Ghosh, S. M. Sadaf, and S. Arafin, “Influence of InGaN quantum disk thickness on the optical properties of GaN nanowires,” Compound Semiconductor Week 2022 (poster), Ann Arbor, MI, USA, June 2022.

[20] A. M. D. M. Xavier, A. Ghosh, S. I. Rahman, A. Allerman, S. Arafin, S. Rajan, “Design and demonstration of efficient transparent 37% Al-content AlGaN interband tunnel junctions” Compound Semiconductor Week 2022, Ann Arbor, MI, USA, June 2022. (Best Student Paper Award)

[21] R. Arefin, S. H. Lee, H. Jung, J. Ha, W. You, A. Ghosh, M. S. I. Sumon, J. S. Kim, S. Krishna, and S. Arafin, “Effects of post-growth thermal annealing on MBE-grown InAlGaAs/GaAs quantum dots,” Compound Semiconductor Week 2022 (poster), Ann Arbor, MI, USA, June 2022.

[22] A. M. D. M. Xavier, A. Ghosh, S. I. Rahman, S. Arafin, and S. Rajan, “Interband tunnel junctions for AlGaN ultra-violet light emitting diodes”, 5th International Workshop on UV Materials and Devices (IWUMD 2022), Jeju, Korea, May 2022.

[23] W. You, H. Jung, C. S. Kim, M. Kim, C. L. Canedy, C. D. Merritt, W. W. Bewley, I. Vurgaftman, J. R. Meyer, and S. Arafin, “Comparison of BCl3/Ar and CH4/Ar plasma chemistries for dry etching of interband cascade lasers”, 15thInternational Conference on Mid-infrared Optoelectronics: Materials and Devices (MIOMD), Virtual, Sept., 2021.

[24] S. Saha, A. Rice, A. Ghosh, S. M. N. Hasan, W. You, L. J. Bissell, R. Bedford, M. H. Crawford, and S. Arafin, “Characterization and analysis of large-area h-BN on sapphire”, 2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID), Virtual, Aug. 2021.

[25] R. Arefin, J. Ha, S.-H. Lee, J. S. Kim, H. Jung, S. Krishna, and S. Arafin, “MBE growth and characterization of InAlGaAs/GaAs quantum dots”, 2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID), Virtual, Aug. 2021.

[26] C. H. Li, S. H. Ramachandra, I. I. Faruque, S. Dwivedi, S. Arafin, “Chip-scale nonlinear photonics for green light generation using on-chip pump lasers”, Integrated Photonics Research, Silicon and Nanophotonics (IPR) within Advanced Photonics 2021, Virtual, July 2021.

[27] W. You and S. Arafin, “Towards electrically-pumped monolithic InP-based topological lasers,” Integrated Photonics Research, Silicon and Nanophotonics (IPR) within Advanced Photonics 2021, Virtual, July 2021.

[28] S. Saha, A. Rice, A. Ghosh, S. M. N. Hasan, W. You, M. Crawford, and S. Arafin, “Characterizations of strained hexagonal boron nitride grown on sapphire” 22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22) and 20th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-20), Virtual, Aug. 2021.

[29] S. M. N. Hasan, Z. Jamal-Eddine, B. Gunning, H. Chandrasekar, M. Crawford, A. Armstrong S. Rajan and S. Arafin,Monolithic MOCVD-grown III-nitride tunnel junctions with ultra-low resistance”, 62nd Electronic Material Conference 2020, Columbus, OH, USA

[30] Z. Jamal-Eddine, S. M. N. Hasan, B. Gunning, H. Chandrasekar, M. Crawford, A. Armstrong S. Rajan and S. Arafin,Theoretical analysis of transparent graded InGaN tunnel junctions for blue LEDs”, 62nd Electronic Material Conference 2020, Columbus, OH, USA

[31] B. P. Gunning, S. M. N. Hassan, Z. J.-Eddine, H. Chandrasekar, H. Jung, M. H. Crawford, A. A. Armstrong, S. Rajan, and S. Arafin, “All-MOCVD tunnel junctions for reduced-droop high-power multi-junction cascaded LEDs”, 8th International Symposium on Growth of III-Nitrides,  San Diego, CA, USA, May 2020

[32] R. Arefin, S. Ramachandra, H. Jung, S. M. N. Hasan, W. You, S. Dwivedi, and S. Arafin, “Gallium- and silicon nitride-based photonic integrated circuits for visible wavelengths”, CLEO 2020, paper JTh2A.88, Virtual web-conference, May 2020.

[33] A. Jain, S. Arafin, and S. Dwivedi, “CMOS compatible optical Isolator with tandem ring modulators,” IEEE IPC 2019, San Antonio, TX, USA Sept. 2019.

[34] S. Arafin, Larry A. Coldren and S. Dwivedi, “Design of high-power electrically-pumped VECSELs for the 3-4 μm wavelength range,” IEEE RAPID 2019, Miramar Beach, FL, USA Aug. 2019.

[35] Z. J.-Eddine, S. M. N. Hasan, B. Gunning, H. Chandrasekar, H. Jung, M. Crawford, A. Armstrong, S. Arafin, and S. Rajan, “Sidewall activation of buried p-GaN layers in tunnel-junction enabled multi-junction cascaded blue LEDs, (Late News abstract), 13th International Conference on Nitride Semiconductors 2019, Seattle/Bellevue, WA, USA, July 2019.

[36] S. M. N. Hasan, Z. J.-Eddine, D. Wickramaratne, B. Paul, S. Rajan, and S. Arafin, “Design of tunnel-injected sub-300 nm AlGaN-based lasers,” 13th International Conference on Nitride Semiconductors 2019, Seattle/Bellevue, WA, USA, July 2019.

[37] S. M. N. Hasan, S. Sharif, H. Tang, and S. Arafin, “MBE-Grown III-Nitride Based Blue Laser Diodes on c-plane n-doped GaN Substrates“, OSU Materials Week, Columbus, OH, USA (Poster)  May 8, 2019.

[38] G. M. T. Chai, T. J. C. Hosea, N. E. Fox, K. Hild, A. B. Ikyo, I. P. Marko, A. Bachmann, K. Kashani-Shirazi, S. Arafin, M.-C. Amann, and S. J. Sweeney, “Non-destructive Photo-modulated Reflectance Study of GalnAsSb- based VCSEL,” OSA’s Light, Energy and the Environment Congress 2018 (E2, FTS, HISE, SOLAR, SSL), paper ST4D.6, Sentosa Island, Singapore.

[39] B. Isaac, B. Song, S. Pinna, S. Arafin, L. A. Coldren, and J. Klamkin, “Indium Phosphide Photonic Integrated Circuit transmitter with Integrated Linewidth narrowing for Laser Communications and sensing,” 26th International Semiconductor Laser Conference (ISLC), Santa Fe, NM, USA, Sept. 2018.

[40] S. Arafin, A. P. McFadden, M. Pendharkar, C. J. Palmstrøm and L. A. Coldren, “Recent progress on GaSb-based photonic integrated circuits,” 14th International Conference on Mid-Infrared Optoelectronics, MIOMD- 2018, Flagstaff, AZ, USA, Oct. 2018.

[41] S. Arafin, A. Simsek, M. Lu, M. J. Rodwell, L. A. Coldren, “Offset locking of a fully integrated optical phase-locked loop using on-chip modulators,” OSA Advanced Photonics IPR 2017, New Orleans, LA, USA, July 2017.

[42] S. Arafin, L. Maleki, W. Liang, V. Ilchenko, A. Savchenkov, D. Eliyahu, A. Matsko, A. Simsek, S.-K. Kim, G. Morrison, M. Mashanovitch, L. Johansson, M. J. Rodwell and L. A. Coldren, “Optical synthesis using Kerr frequency combs”, IEEE IFCS 2017, Besançon, France, July 2017.

[43] T. Eales, I. P. Marko, B. A. Ikyo, A. R. Adams, I. Vurgaftman, S. Arafin, S. Sprengel, M.-C. Amann, J. R. Meyer and S. J. Sweeney,, “Auger recombination in type I GalnAsSb/GaSb lasers and its variation with wavelength in the 2–3 μm range,” CLEO/Europe-EQEC 2017, Munich, Germany, June  2017.

[44] S. Arafin, A. Simsek, S.-K. Kim, S. Dwivedi, W. Liang, D. Eliyahu, J. Klamkin, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Optical frequency synthesis by offset-locking to a microresonator comb,” CLEO 2017, San Jose, CA, USA, May 2017.

[45] S. Arafin, G. Morrison, M. Mashanovitch, L. A. Johansson, and L. A. Coldren, “Coupled-cavity lasers for a low-power integrated coherent optical receiver,”  CLEO 2017, San Jose, CA, USA, May 2017.

[46] A. Simsek, S. Arafin, S.-K. Kim, G. Morrison, L. A. Johansson, M. Mashanovitch, L. A. Coldren, and M. J. Rodwell, “A chip-scale heterodyne optical phase-locked loop with low-power consumption,” Optical Fiber Communication Conference 2017, Los Angeles, CA, USA, Mar. 2017.

[47] T. Eales,  I.  P. Marko, B. A. Ikyo, A. R. Adams, S. Arafin, S. Sprengel, M.-C. Amann and S. J. Sweeney, “Wavelength dependence of efficiency limiting mechanisms in type-I GaInAsSb/GaSb lasers emitting in the mid-infrared,” 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, paper TuB8, pp.1-2, Sept. 2016.

[48] T. Eales, I. Marko, B. Ikyo, A. R. Adams, S. Arafin, S. Sprengel, and M.-C. Amann, S. J. Sweeney, “Recombination processes in type-I GaInAsSb lasers,” 13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, Beijing, China, Sept. 2016.

[49] M. Rodwell, A. Simsek, D. Dadic, S. Arafin, H. Park and L. A. Coldren, “IC design for optical frequency synthesis,” (invited), 2016 IEEE Photonics Conference, Waikoloa, Hawaii, USA, Oct. 2016.

[50] L. A. Coldren, M. Lu, J. Parker, L. Johansson, S. Arafin, D. Dadic, M. Rodwell, “Toward Hz-level Optical Frequency Synthesis Across the C-band,” (invited), Integrated Photonics Research, Silicon and Nanophotonics 2016, Vancouver, BC, Canada, July 2016.

[51] L. A. Coldren, W. Li, A. Mecozzi, M. Lu, S. Arafin, M. Vasilyev, D. Dadic, and L. Johansson, “Single-chip dual-pumped SOA-based phase-sensitive amplifier at 1550 nm,” Nonlinear-Optical Signal Processing (NOSP) within IEEE Summer Topicals Meeting 2015, Nassau, Bahamas, July 2015.

[52] W. Li, M. Lu, L. Johansson, M. Mashanovitch, D. Dadic, S. Arafin, and L. A. Coldren, “First demonstration of an integrated photonic phase-sensitive amplifier,” Conference on Lasers and Electro-Optics 2015, San Jose, CA, USA, May 2015.

[53] D. Wickramaratne, Y. Alaskar, S. Arafin, A. G. Norman, J. Zou, Z. Zhang K. L. Wang, and R. K. Lake, “Van der Waals materials as buffer layers for quasi-vdW epitaxy of GaAs on Si,” Lawrence Epitaxy Workshop 2015, Tempe, AZ, USA, Feb. 2015. Presentation file

[54] Y. Alaskar*, S. Arafin*, D. Wickramaratne, R. K. Lake, and K. L.Wang, “Quasi Van Der Waals Epitaxy of GaAs on Graphene/Si by molecular beam epitaxy,” 18th International Conference on Molecular Beam Epitaxy 2014, Flagstaff, AZ, USA, Sept. 2014, Poster.  *equal contribution

[55] G. M.T. Chai, T.J.C. Hosea, N.E. Fox, K. Hild, A. B. Ikyo, I. P. Marko, A. Bachmann, S. Arafin, M.-C. Amann, S. J. Sweeney, “Photoreflectance of a 2.3 µm GaInAsSb-based VCSEL structure for gas sensing applications,” 2nd Annual International Conference on Optoelectronics, Photonics & Applied Physics (OPAP), Canning Walk, Singapore, Singapore, Feb. 2014.

[56] C.-P. Chu, S. Arafin, G. Huang, T. Nie, Y. Wang, J. Jou, S. M. Qasim, M. S. BenSaleh and K. L. Wang, “Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy,” 30th North American Conference on Molecular Beam Epitaxy (NAMBE), Banff, AB, Canada, Oct. 2013.

[57] B. H. Le, S. Arafin, N. H. Tran, H. P. T. Nguyen and Z. Mi, “Current-voltage characteristics of single InGaN/GaN nanowire LEDs,” 10th International Conference on Nitride Semiconductors 2013, Washington, DC, USA, Aug. 2013, Poster.

[58] S. Sprengel, K. Vizbaras, C. Grasse, T. Gruendl, S. Arafin, A. Andrejew, G. Boehm, R. Meyer, M.-C. Amann, “Advanced concepts for long wavelength surface and edge emitting lasers in the mid-IR,” (invited), 40th International Symposium on Compound Semiconductors, Kobe, Japan, May 2013.

[59] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. Arafin,  M.-C.Amann, and S. J. Sweeney, “The effect of hole leakage and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers,” in CLEO/Europe-IQEC 2013,  Munich, Germany, May 2013.

[60] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. Arafin,  M.-C.Amann, and S. J. Sweeney, “Influence of band offset and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers,”  in SPIE Photonics West 2012,  Conf.on Novel In-Plane Semiconductor Lasers XII,  San Francisco, CA, USA, Feb. 2013.

[61] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. J. Sweeney, S. Arafin, and M.-C.Amann, “Temperature dependence of 2.3 µm and 2.6 µm GaInAsSb based BTJ-VCSELs and edge emitting lasers,”  in SPIE Photonics West 2012,  Conf.on Novel In-Plane Semiconductor Lasers XI,  San Francisco, CA, USA, Jan. 2012.

[62] M.-C. Amann, and S. Arafin, “GaSb-based wavelength-tunable single-mode VCSELs for the 2­3 µm wavelength range,” (invited), 10th International Conference on Mid-Infrared Optoelectronics, IC-MIOMD-X 2010, Shanghai, China, Sept. 2010.

[63] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. J. Sweeney, S. Arafin, and M.-C. Amann, “Gain-cavity tuning and non-radiative recombination in 2.6 µm GaInAsSb VCSEL,” UK Semiconductors 2011, Sheffield, UK, July 2011.

[64] A. B. Ikyo, I. P. Marko, A. R. Adams, S. J. Sweeney, S. Arafin, and M.-C.  Amann, “Wavelength dependence of the performance of GaInAsSb/GaSb mid-infrared lasers,” UK Semiconductors 2011, Sheffield, UK, July 2011, Poster.

[65] K. Vizbaras, A. Andrejew, A. Vizbaras, C. Grasse, S. Arafin, and M.-C. Amann, “Low-threshold 3 µm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous wave up to 64°C,” Indium Phosphide and Related Materials, IPRM 2011, Berlin, Germany, May 2011.

[66] M. Ortsiefer, C. Neumeyr, J. Rosskopf, S. Arafin, G. Boehm, A. Hangauer, J. Chen, R. Strzoda, and M.-C. Amann, “GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tunable diode laser spectroscopy of carbon monoxide,” (invited), in SPIE Photonics West 2011, Conf. on Quantum Cascade Lasers and Applications II, San Francisco,  CA, USA, Jan. 2011.

[67] M.-C. Amann, S. Arafin, and K. Vizbaras, “Single-mode and tunable GaSb-based VCSELs for wavelengths above 2 µm,” (invited), in SPIE Photonics West 2011, Conf. on VCSEL Sensors and Applications, San Francisco, CA, USA, Jan. 2011.

[68] S. Arafin, A. Bachmann, K. Vizbaras, and M.-C. Amann, “Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm,” in Proc. 22nd IEEE International Semiconductor Laser Conference, ISLC 2009, paper TuB4, pp.47-48, Kyoto, Japan, Sept. 2010.

[69] K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, and M.­C. Amann, “MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm,” 16th International Conference on Molecular Beam Epitaxy, MBE 2010, Berlin, Germany, Aug. 2010.

[70] S. Arafin, A. Bachmann, K. Vizbaras, J. Gustavsson, A. Larsson, and M.-C. Amann, “Large-area single-mode GaSb-based VCSELs using an inverted surface relief,” in Proc. 23rd Annual Meeting of the IEEE Photonics Society 2010, paper MI3, pp. 61-62, Denver, CO, USA, Nov. 2010. (Best Student Paper Award, 2nd place).

[71] A. Härkönen, A. Bachmann, S. Arafin, K. Haring, J. Viheriälä, M. D. Guina, and M.-C. Amann, “2.34 µm electrically-pumped VECSEL with buried tunnel junction,” in SPIE Photonics Europe, Conf. on Nanolasers and VECSELs, Brussels, Belgium, Apr. 2010.

[72] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Continuous-wave electrically-pumped GaSb-based VCSELs at ~2.6 µm operating up to 50°C,” in Proc. 22nd Annual Meeting of the IEEE Photonics Society 2009, paper ThBB2, pp. 837-838, Belek-Antalya, Turkey, Oct. 2009.

[73] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Continuous-wave single-mode electrically-pumped GaSb-based VCSELs at 2.5 µm,” in Proc.8th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2009, paper WG4-2, pp. 1-2, Shanghai, China, Sept. 2009.

[74] A. Bachmann, S. Arafin, K. Kashani-Shirazi, and M.-C. Amann, “Long wavelength electrically-pumped GaSb-based buried tunnel junction VCSELs,” 14th International Conference on Narrow Gap Semiconductors and Systems, NGSS 2009, Sendai, Japan, July 2009.

[75] K. Kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, and M.-C. Amann, “Ultra-low threshold GaSb-based laser diodes at 2.65 µm,” in Proc. Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, CLEO /IQEC 2009, paper CTuGG5, pp. 1-2, Baltimore, USA, May 2009.

[76] K. Kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, S. Ziegler, and M.-C. Amann, “Optimized MBE growth technique for GaSb-based edge emitters at 2.7 µm,” Euro MBE 2009, Zacopane, Poland, Mar. 2009.

Invited Talks

[1] S. Arafin, “Recent progress of electrically-pumped AlGaN UV‑A lasers with transparent tunnel junctions” 26th Photonics North Conference 2024, Vancouver, BC, Canada, May 2024.

[2] S. Arafin, “Photonic Integrated Circuits at MWIR and Green Wavelengths for Biomedical Applications” A&T 1 Biomedical Applications within CLEO 2024, Charlotte, NC, USA, May 2024.

[3] S. Arafin, “Engineering 3D compound semiconductor materials for topological insulator lasers,” Functional Photonic Materials, within 2023 IEEE Research and Applications of Photonics in Defence Conference (RAPID), Miramar Beach, FL, USA, Sept. 2023.

[4] S. Arafin, “Recent progress of continuous-wave electrically-pumped InP-based topological insulator lasers”, Conf. “Quantum Sensing and Nano Electronics and Photonics XIX”, within SPIE Photonics West, San Francisco, CA, USA, Jan. 2023.

[5] S. Arafin, “MBE-grown III-V quantum dot lasers for LiDAR applications”, 24th Photonics North Conference 2022, Niagara Falls, ON, Canada, May 2022.

[6] S. Arafin, “Compound III-V semiconductor based classical and non-classical light emitters at visible through mid-infrared”, IEEE Photonics Society Bangladesh Chapter, Dhaka, Bangladesh, Aug. 2021, virtual.

[7] S. Arafin, “GaSb-based lasers and PICs for short- and mid-wave applications”, Asia Communications and Photonics Conference (ACP) on Track 4 “Photonic Components and Integration, virtual, Oct.  27 2020.

[8] S. Arafin, “Compound III-V semiconductor based classical and non-classical light emitters at visible through mid-infrared”, Dept. of Electrical and Computer Engineering, University of Iowa,  Iowa City, IA,  Oct. 15, 2020.

[9] S. Arafin, “Growth of large-area single-crystalline h-BN for single photon emission”, 2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID), virtual,  Aug. 2020.

[10] S. Arafin, “Compound III-V semiconductor based classical and non-classical light emitters at visible through mid-infrared” at the 43rd IEEE Electron Devices Society Activities in Western NY Conference, at Rochester Institute of Technology on Thursday, Nov. 7, 2019

[11] S. Arafin, “Recent progress on GaSb-based electrically-pumped vertical cavity surface emitting lasers emitting above 4 μm,” Paper 10980-16, SPIE Defense + Commercial Sensing, Session: Advanced Photodetection and Emitter Technologies, Baltimore Convention Center, Baltimore, Maryland, USA.

[12] S. Arafin, “Highly-integrated optical phased-locked loop for LiDAR/remote sensing,” Paper 10980-28, SPIE Defense + Commercial Sensing, Session: Advanced Technology I, Baltimore Convention Center, Baltimore, Maryland, USA.

[13] S. Arafin, “Chip-scale optical frequency synthesis based on optical phase-locked loop for optical communications and LiDAR,” Intel, Santa Clara, CA, USA, Oct. 2018.

[14] S. Arafin, “The challenges of mid-IR LiDAR/remote sensing for the photonic chip,” OSA Integrated Photonics in the Mid-IR Incubator, Washington DC, USA, May 2018.

[15] S. Arafin, “Semiconductor materials and photonic devices – from visible to mid­infrared,” Dept. of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA, Mar. 2018.

[16] S. Arafin, “Chip-scale optical frequency synthesis based on optical phase-locked loop,” University of Virginia, Charlottesville, VA, USA, Dec. 2017. [link]

[17] S. Arafin, A. Simsek, S.-K. Kim, W. Liang, D. Eliyahu, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Optical frequency synthesis by offset-locking the tunable local-oscillator of a low-power integrated receiver to a microresonator comb,” IEEE IPC 2017, Lake Buena Vista, FL, USA, Oct. 2017.

[18] S. Arafin, “Semiconductor materials and photonic devices – from visible to mid­infrared,” Dept. of Electrical and Computer Engineering, University of Texas Dallas, Dallas, TX, USA, Apr. 2017.

[19] S. Arafin,Recent progress of Quasi van der Waals epitaxial growth of GaAs on silicon using graphene,” Global Nanotechnology Congress and Expo, Dubai, UAE, Apr. 2016.

[20] S. Arafin, “Heteroepitaxy of GaAs on silicon: MBE growth and material characterization,” Department of Materials, UC Santa Barbara, USA, Jan. 2015.

[21] S. Arafin, “Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers,” Department of Physics, Technische Universität Kaiserslautern, Kaiserslautern, Germany, Oct. 2011.

[22] S. Arafin, M. Müller, and M.-C. Amann, “InP-based high-speed VCSELs for optical interconnects,” in 22nd IEEE International Semiconductor Laser Conference, ISLC 2010, Workshop on Progress in light source for optical interconnection, Kyoto, Japan, Sept. 2010.

Book Chapter

Y. Alaskar, S. Arafin, and K. L. Wang, “Heteroepitaxial growth of III-V semiconductors on 2D materials”, in “Two-dimensional Materials – Synthesis, Characterization and Potential Applications”, P. K. Nayak (Ed.), chapter 3, pp. 43-62, ISBN 978-953-51-2555-6, InTech, Rijeka, Croatia, Aug. 2016.

Patents

[1] A. Banerjee, R. Chen, S. Arafin, and S. Mitragotri, “Oral drug delivery devices and methods using iontophoresis,” US Patent, Application #20200238081, July 2020.

[2] M. Crisan and S. Arafin, “Recurrent quantum photonic processor and methods,” US Patent, Application #63/519,008, Filed on August 11, 2023

Non-Refereed Publications

[1] S. M. N. Hasan, S. Saha, and S. Arafin, “III-nitride quantum dot- and boron-nitride defect-based single photon emitters” Launch Event 2022, Center for Quantum Information Science and Engineering, Physics Research Building 1080, Poster, Columbus, OH.

[2] F. Toor, S. Jackson, X. Shang, S. Arafin, and H. Yang, “Mid-infrared lasers for medical applications”, Biomed. Opt. Express, vol. 9, no. 12, pp.  6255-6257 , Nov. 2018. Editorial

[3] A. P. McFadden, S. Arafin, M. Pendharkar, L. A. Coldren and C. J. Palmstrøm,  “MBE growth of quaternary AlGaAsSb/InGaAsSb heterostructures for tunable lasers with 2.2-2.6 µm emission wavelength”, Poster, Light Science Workshop 2018, Santa Barbara, CA, USA, 2018.

[4] S. Arafin, F. Toor, P. Hong, and K. Xu, “Near- to mid-IR (1–13  μm) III-V semiconductor lasers”, Appl. Opt., vol. 56, no. 31, pp. NIR1-NIR2 , Nov. 2017. Editorial

[5] T. Eales, I. P. Marko, B. A. Ikyo, A. R. Adams, S. J. Sweeney, S. Arafin, S. Sprengel, M. C. Amann, “Physical properties of type-I GaInAsSb/GaSb lasers emitting in the mid-infrared range of 2.3-2.9 µm”, 30th Semiconductor Integrated Optoelectronics Conference, SIOE 2016, Cardiff, UK, Apr. 2016.

[6] H. P. T. Nguyen, S. Arafin, J. Piao and Tran Viet Cuong, “Nanostructured Optoelectronics: Materials and Devices”, J. Nanomaterials, vol. 2016, no. 2051908, pp. 1­2, July 2016. Editorial

[7] M. Lu, W. Guo, W. Li, A. Barve, L. Johansson, H.-C. Park, S. Arafin, D. Dadic, M. Rodwell, L. Coldren, “Photonic integrated circuits and VCSELs for communication and sensing”, University of California Santa Barbara Year of Light Symposium, Oct. 2015. Poster

[8] A. B. Ikyo, I .P. Marko, K. Hild, A. R. Adams, S. Arafin, M.-C. Amann, and S. J. Sweeney, “Temperature sensitivity and wavelength dependence of the recombination processes of GaInAsSb/GaSb mid-infrared lasers,” Semiconductor Integrated Optoelectronics Conference, SIOE 2015, Cardiff, UK, Apr. 2015.

[9]   S. Arafin, C.-P. Chu, Y. Alaskar and K. L. Wang, “Recent progress of heteroepitaxy for high-quality GaAs on silicon,” World Congress and Expo on Nanotechnology and Materials Science, Dubai, UAE, pp. 206, Apr. 2015.

[10] S. Arafin, “Graphene gets GaAs onto Silicon,” Feature article, Compound Semiconductor, pp. 42-46, May. 2015.

[11] S. Arafin, K. Klein, K. Vizbaras, and M.-C. Amann, “a-Ge and a-Si as dielectric mirror materials for long wavelength optoelectronics devices: a comparative study,” 25th Semiconductor Integrated Optoelectronics Conference, SIOE 2011, Cardiff, UK, Apr. 2011.

[12] S. Arafin, and M.-C. Amann, “Antimony-based tunable diode lasers for trace-gas sensing,” Fire & Safety Group Magazine, FS-World Newsletter, Aug. 2010.

[13] M.-C. Amann, A. Bachmann, S. Arafin, and K.Vizbaras, “Recent progress on GaSb-based single-mode VCSELs,” VCSEL Day 2010, Torino, Italy, May 2010.

[14] K. Vizbaras, A. Bachmann, S. Arafin, and M.-C. Amann, “Recent progress on electrically pumped single-mode GaSb-based VCSELs emitting around 2.3 µm and 2.6 µm,” International workshop on opportunities and challenges in mid-infrared laser-based gas sensing, MIRSENS 2010, Wroclaw, Poland, May 2010.

[15] S. Priyabadini, S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Low-resistive thermally-stable metal-semiconductor contacts on n-GaSb uing n-InAsSb contact layer,” International Conference on Frontiers of Physics, IFCP 2009, Kathmandu, Nepal, June 2009.

[16] S. Arafin, A. Bachmann, K. Kashani-Shirazi, S. Priyabadini, and M.-C. Amann, “Low-resistive ohmic contacts to n-InAs0.91Sb0.09 for GaSb-based VCSELs in the mid-infrared range,” 23rd Semiconductor Integrated Optoelectronics Conference, SIOE 2009, Cardiff, UK, Apr. 2009.

Press Releases 

2014: Adv. Funct. Mater. paper on Van der Waals epitaxial growth of GaAs on graphene/silicon received a very extensive media coverage. The results were highlighted by more than 5 international online magazine/newsletters, e.g. Compound Semiconductor, Semiconductor Today, UCLA Electrical Engineering etc.

2017: Opt. Express paper on “Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop” was highlighted in Compound Semiconductor. Nat. Photon and ECE UCSB