Book

PART 1: MATERIALS

Chapter 1: Electron Energy and States in Semiconductors

• 1.1 Introduction and Preview
• 1.2 A Brief History
• 1.3 Application to the Hydrogen Atom
  • 1.3.1. The Bohr Model for the Hydrogen Atom (Part A) ( Part B)
  • 1.3.2. Application to Molecules: Covalent Bonding
  • 1.3.3. Quantum Numbers and the Pauli Exclusion Primciple
  • 1.3.4. Covalent Bonding in Crystalline Solids
• 1.4. Wave-Particle Duality
• 1.5 The Wave Function
• 1.6 The Electron Wave Function Intrduction
  • 1.6.1 The Free Electron in One Dimension
  • 1.6.2 The de Broglie Relationship
  • 1.6.3 1.6.3 The Free Electron in Three Dimensions
  • 1.6.4 The Quasi-Free Electron Model (Part A) (Part B)
  • 1.6.5 Reflection and Tunneling
• 1.7 A First Look at Optical Emission and Absorption
• 1.8 Crystal Structures, Planes, and Directions
• 1.9 Summary

Chapter 2: Homogeneous Semiconductors

• 2.1 Introduction and Preview
• 2.2 Pseudo-Classical Mechanics for Electrons
  • 2.2.1 One-Dimensional Crystals (Part A) (Part B)
  • 2.2.2 Three-Dimensional Crystals
• 2.3 Conduction Band Structure
• 2.4 Valence Band Structure
• 2.5 Intrinsic Semiconductors
• 2.6 Extrinsic Semiconductors
  • 2.6.1 Donors
  • 2.6.2 Acceptors
• 2.7 The Concept of Holes
• 2.8 Effective Mass of Electrons and Holes
• 2.9 Density-of-States Functions for Electrons in Bands
• 2.10 Fermi-Dirac Statistics
• 2.11 Electron and Hole Distributions with Energy (Part A) (Part B)
• 2.12 Temperature Dependence of Carrier Concentrations in Nondegenerate Semiconductors
  • 2.12.1 Carrier Concentrations at High Temperatures
  • 2.12.2 Carrier Concentrations at Low Temperatures (CarrierFreeze-Out)
• 2.13 2.13 Degenerate Semiconductors
  • 2.13.1 Impurity-Induced Band-Gap Narrowing
  • 2.13.2 Apparent Band-Gap Narrowing
• 2.14 Summary

Chapter 3: Current Flow in Homogeneous emiconductors

• 3.1 Introduction and 3.2 Drift Current
• 3.3 Carrier Mobility
  • 3.3.1 Carrier Scattering
  • 3.3.2 Scattering Mobility
  • 3.3.3 Impurity Band Mobility
  • 3.3.4 Temperature Dependence of Mobility
  • 3.3.5 High-Field Effects
• 3.4 Diffusion Current
• 3.5 Carrier Generation and Recombination
• 3.6 Optical Processes in Semiconductors
  • 3.6.1 Absorption
  • 3.6.2 Emission
• 3.7 Continuity Equations
• 3.8 Minority Carrier Lifetime
  • 3.8.1 Rise Time
  • 3.8.2 Fall Time
• 3.9 Minority Carrier Diffusion Lengths
• 3.10 Quasi Fermi Levels
• 3.11 Summary

Chapter 4: Nonhomogeneous Semiconductors

• 4.1 Constancy of the Fermi Level at Equilibrium
• 4.2 Graded Doping (Part A) (Part B)
• 4.3 Nonuniform Composition
• 4.4 Graded Doping and Nonuniform Composition Combined
• 4.5 Summary

Supplement to Part I: Introduction to Quantum Mechanics

• S1.1 Introduction
• S1.2 The Wave Function
• S1.3 Probabiity and the Wave Function
  • S1.3.1 Particle in a One-Dimensional Potential Well
• S1.4 Schrödinger’s Equation
• S1.5 Applying Schrödinger’s Equation
• S1.6 Some Resuts from Quantum Mechanics
  • S1.6.1 The Free Electron
  • S1.6.2 The Quasi-Free Electron
  • S1.6.3 The Potential Energy Well
  • S1.6.4 The Infinite Potential Well in One Dimension
  • S1.6.5 Reflection and Transmission at Finite Potential Barrier
  • S1.6.6 Tunneling Part A (Part B) (Part C) (Part D)
  • S1.6.7 The Finite Potential Well
  • S1.6.8 The Hydrogen Atom Revisited
  • S1.6.9 The Uncertainty Principle
• S1.7 Phonons (introduction)
  • S1.7.1 Carrier Scattering by Photons
  • S1.7.2 Indirect Electron Transitions
• S1.8 Summary

PART II: DIODES

Chapter 5: Prototype pn Homojunctions

• 5.1 Introduction
• 5.2 Prototype pn Junctions (Qualitative)
  • 5.2.1 Energy band Diagrams of Prototype pn Junctions (Part A)(Part B)
  • 5.2.2 Description of Current Flow in a pn Prototype Homojunction
  • 5.2.3 Tunnel Diodes
• 5.3 Prototype pn Homojunctions (Quantitative)
  • • 5.3.1 Energy band Diagram at Equilibrium (Step Junction)
    • 5.3.2 Eenergy Band Diagram with Applied Voltage (Part A) (Part B)
    • 5.3.3 Current=Voltage Characteristics of pn Homojunctions (Part A)

  (Part B)(Part C)(Part D)(Part E)(Part F)

  • 5.3.4 Reverse-bias Breakdown
• 5.4 Small-Signal Impedance of Prototype Homojunctions
  • 5.4.1 Junction (Differential) Resistance
  • 5.4.2 Junction (Differential) Capacitance
  • 5.4.3 Stored-Charge Capacitance
• 5.5 Transient Effects
  • 5.5.1 Turn-Off Transient
  • 5.5.2 Turn-On Transient
• 5.6 Effects of Temperature
• 5.7 Summary

Chapter 6: Additonal Considerations for Diodes

• 6.1 Introduction
• 6.2 Non-Step Homojunctions (intro combined with 6.1)
  • 6.2.1 Linearly Graded Junctions)
  • 6.2.2 Hyperabrupt Junctions
• 6.3 Semiconductor Heterojunctions
  • 6.3.1 The Energy Band Diagrams of Semiconductor-Semiconductor Heterojunctions
  • 6.3.2 Tunneling-Induced Dipoles
  • 6.3.3 Effects of Interface States
  • 6.3.4 Effects of Lattice Mismatch on Heterojunctions
• 6.4 Metal-Semiconductor Junctions
  • 6.4.1 Ideal Metal-Semiconductor Jucntions (Electron Affinity Model)
  • 6.4.2 Influence of Interface-Induced Dipoles (Combined with 6.4.1)
  • 6.4.3 The Current-Voltage Characteristics of Metal-Semicnductor Junctions
  • 6.4.4 Ohmic (Low-Resistance) Contacts
  • 6.4.5 I-Va Characteristics of Heterojunctions Diodes
• 6.5 Capacitance in Nonideal Junctions and Heterojunctions
• 6.6 Summary

Supplement to Part II: Diodes

• S2.1 Introduction
• S2.2 Dielectric Relaxation Time
  • S2.2.1 Dielectric Relaxation Time for Majority Carriers
  • S2.2.2 Dielectric Relaxation Time for Minority Carriers
• S2.3 Junction Capacitance
  • S2.3.1 Junction Capacitance in a Prototype (Step) Junction
  • S2.3.2 Junction Capacitance in a Nonuniformly Doped Junction
  • S2.3.3 Varactors
  • S2.3.4 Stored Charge Capacitance of Short-Base Diodes
• S2.4 Second Order Effects in Schottky Diodes
  • S2.4.1 Tunneling through Schottky Barriers
  • S2.4.2 Barrier Lowering in Schottky Barriers due to the Image Effect
• S2.5 Summary

PART III: Field-Effect Transistors

• Introduction (Part 1) (Part 2) (Part 3) (Part 4)

• Chapter 7: The MOSFET

  • 7.1 Introduction
  • 7.2 MOSFETS (Qualitative)
    • 7.2.1 The MOS Capacitor
    • 7.2.2 MOS Capacitor Hybrid Diagrams
    • 7.2.3 MOSFETs at Equi8ibrium (Qualitative)
    • 7.2.4 MOSFETs Not at Equilibrium (Part A) (Part B: Enhancement and Depletion MOSFETs) (Part C: More about Threshold) (Part D: VDS is not 0)
  • 7.3 Drift Model for MOSFETs (Quantitative)
    • 7.3.1 Long Channel Drift MOSFET Model with Constant Channel Mobility (Part A: Channel Charge) (Part B: Constant Mobility) (Part C: Saturation Current Revisited) (Part D: Channel Length Modulation)
    • 7.3.2 More Realistic Long-Channel Models: Effects of Fields on Mobiity (Part A: Effect of Transverse Field) (Part B: Effect of Transvers Field Continued Field) (Part C: Effect of Longitudinal Field)
    • 7.3.3 Series Resistance
  • 7.4 Comparison of Models with Experiment
  • 7.5 Ballistic Model
  • 7.6 Some Short-Channel Effects
    • 7.6.1 Dependence of the effective Channel Length on VDS
    • 7.6.2 Dependence of Threshold on the Drain Voltage
  • 7.7 Subthreshold Leakage Current
  • 7.8 Summary

Chapter 8: Other Field Effect Transistors

• 8.1 Introduction
• 8.2 Measurement of Mobility and Threshold Voltage
  • Part A
  • Part B
• 8.3 Complementary MOSFETs (CMOS)
  • 8.3.1. The CMOS Inverter
  • 8.3.2 Matching of CMOS Devices
• 8.4 Switching in CMOS Circuits Carrier Generation and Recombination
  • 8.4.1. Effect of Load Capacitance
  • 8.4.2 Propagation (Gate) Delay in CMOS Switching Circuits
  • 8.4.4 Pass-Through Current in CMOS Devices
• 8.5 Other MOSFETS
  • 8.5.1 Part A Partially Depleted SOI
  • 8.5.1 Part B Fully Depleted SOI MOSFET
  • 8.5.1 Part C Asymmetric Double-Gate SOI
  • 8.5.1 Part D Symmetric Dual-Gate Fully Depleted SOI MODSFET
  • 8.5.1 Part E Subthreshold Swing in Double-Gate Fully Depleted SOI
  • 8.5.2 FinFETs
  • 8.5.3 Nonvolatile FETs
• 8.6. Other FETs
  • 8.6.1 HFETs Part A Part B
  • Part C
  • 8.6.2 MESFETs
  • 8.6.3 JFETs
  • 8.6.4 TFETs
• 8.7 Bulk Channel FETs: Quantitative Part A Part B
• 8.8 Summary

Supplement to Part III: Additional Considerations for MOSFETs

• S3.1 Introduction
• S3.2 Dependence of Channel Charge on Longitudinal Field
• S3.3 Threshold Voltage for MOSFETs Introduction
  • S3.3.1 Fixed Charge
  • S3.3.2 Interface Trapped Charge
  • S3.3.3 Bulk Charge
  • S3.3.4 Effect of Charge on the Threshold Voltage
  • S3.3.5 Flatband Voltage
  • S3.3.6 Threshold Votlage Control
  • S3.3.7 Channel Quantum Effects
• S3.4 MOSFET Analog Equivalent Circuits Introduction
  • S3.4.1 Small Signal Equivalent Circuits (Part A) (Part B)
  • S3.4.2 CMOS Amplifiers
• S3.5 Unity Current Gain Cutoff Frequency f_T
• S3.6 MOS Capacitors
  • S3.6.1 Ideal MOS Capacitance
  • S3.6.2 The C-V Characteristics of Real MOS Capacitors
  • S3.6.3 MOSFET Parameter Analysis from C-V Measurements
• S3.7 Dynamic Read-Only Memory
• S3.8 MOSFET Scaling
• S3.9 Device and Interconnect Degradation
  • S3.9.1 MOSFET Integrated Ciruit Reliability
• S3.10 Summary

PART IV: Bipolar Junction Transistors

• Introduction (Part A) (Part B)

• Chapter 9: Bipolar Transistors: Statics

  • 9.1 Introduction Part A Part A
  • 9.2 Output Characteristics (Qualitative)
  • 9.3 Current Gain
  • 9.4 Model of a Prototype BJT (Intoduction)
    • 9.4.1.Collection Efficiency M
    • 9.4.2 Injection Efficiency gamma
    • 9.4.3 Base Transport Efficiency (Part A Derivation)(Part B Example) (Part C Another example) (Part D A third example)
  • 9.5 Doping Gradients in BJTs: Introduction
    • 9.5.1 The Graded-Base Transistor Part A Part B
    • 9.5.2 Efect of Base Field on beta
  • 9.6 Heterojunctino Transistors Introduction
    • 9.6.1 Uniformly Doped HBT
    • 9.6.2 Graded Composition HBT: (Se: SeGe-Base HBT)
    • 9.6.3 Double-Heretojunction BJT
  • 9.7 Comparison of Si-Base, SiGe-Base, and GaAs-Base BJTs
  • 9.8 The Basic Ebers-Moll dc Model Part A Part B
  • 9.9 Summary

Chapter 10: Time-Dependent Analysis of BJTs

• 10.1 Introduction
• 10.2 Ebers-Moll Model
• 10.3 Small-Signal Models (Introduction)
  • 10.3.1 Hybrid Pi Model (Part A) (Part B) (Part C)
• 10.4 Stored-Charge Capacitance
• 10.5 Frequency Response (Introduction)
  • 10.5.1 Unity Gain Frequency f_T
  • 10.5.2 Base Transit Time t_T
  • 10.5.3 Base-Collector Transit Time t_BC
  • 10.5.4 Maximum Oscillation Frequency f_max
• 10.6. High-Frequency Transistors
  • 10.6.1 Double-Poly Self-Aligned Transistor
• 10.7 BJT Switching Times (Introduction)
  • 10.7.1 Output Low-to-High TransitionTime
  • 10.7.2 Schottky-Clamped Transistor
  • 10.7.3 Double Heterostructure Bipolar Junction Transistors (HBTs)
• 10.8 BJTs, MOSFETs, and BiMOS
  • 10.8.1 Comparison of BJTs and MOSFETs
  • 10.8.2 BiMOS
• 10.9 Summary

Supplement to Part IV: Bipolar Devices

• S4.1 Introduction
• S4.2 Current Crowding and Base Resistance
• S4.3 Base Width Modulation (Early Effect)
• S4.4 Avalanche Breakdown
• S4.5 High Injection
• S4.6 Base Push-Out (Kirk) Effect
• S4.7 Recombination in the Emitter-Base Junction
• S4.8 Offset Voltage in BJTs
• S4.9 Lateral Base Transistors
• S4.10 Summary

Part V: Optoelectronic and Power Devices

• Introduction to Part V

• Chapter 11: Optoelectronic Devices

  • • 11.1 Introduction
    • 11.2 Photodetectors
      • 11.2.1 Generic Photodioce (Part A) (Part B) (Part C)
      • 11.2.2 Solar Cells (Part A) (Part B)
      • 11.2.3 The PIN Photodector
      • 11.2.4 Avalanche Photodiodes
    • 11.3 Light-Emitting Diodes
      • 11.3.1 Spontaneous Emission in a Forward-Biased Junction
      • 11.3.2 Blue, Ultraviolet, and White LEDs
      • 11.3.3 IR LEDs (Part A) (Part B)
      • 11.3.4 White LEDs and Solid-State Lighting
    • 11.4 Laser Diodes (Introduction)
      • 11.4.1 Optical Gain
      • 11.4.2 Optical Feedback
      • 11.4.3 Gain + Feedback = Laser
      • 11.4.4 Laser Structures
      • 11.4.5 Other Laser Materials
    • 11.5 Image Sensors (Introduction
      • 11.5.1 Charge-Coupled Devices (CCDs)
      • 11.5.2 Linear Image Sensors
      • 11.5.3 Area Image Sensors
    • 11.6 Summary

Chapter 12: Power Devices

• • 12.1 Introduction and Preview
  • 12.2 Rectifying Diodes
    • 12.2.1 Junction Breadown (Part A) (Part B) (Part C) (Part D) (Part E)
    • 12.2.2 Specific On Resistance (Part A) (Part B) (Part C) (Part D)
    • 12.2.3 Transient Losses (Part A) (Part B)
    • 12.2.4 Merged Schottky-PIN Diodes
  • 12.3 Thyristors (npnp Switching Devices)
    • 12.3.1 The Four-Layer diode Switch)
    • 12.3.2 The Two-Transistor Model of an npnp Switch
    • 12.3.3 The Silicon-Controllled Rectifier
    • 12.3.4 TRIAC
    • 12.3.5 Gate Turn-Off Thyristor
  • 12.4 The Power MOSFET
  • 12.5 The IGBT
  • 12.6 Power MOSFET versus IGBT
  • 12.7 Summary