Thermal transport across GaN and SiC Interface

by Vinay Chauhan

Noon – 12:30pm E525

The heat flux in GaN based high-electron mobility transistors (HEMTs) can reach up to a few kW/cm2 which can lead to failure of devices in case of poor heat dissipation. The thermal interface resistance between the GaN and the substrate material is the major obstruction in the heat flow path, mainly effected by the thermal conductivity of the substrate and the lattice mismatch. The previously developed models showed good concurrence of thermal interface resistance with experimental data at high temperatures (>300 K) but failed to follow the physics at low temperatures. The proposed experiments will enable us to find the reliable thermal properties related to the interface, and thus help in improving and developing the models.